ST High voltage fast-switching NPN power transistor. Features. Applications. Description
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1 High voltage fast-switching NPN power transistor Datasheet production data Features Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Applications Electronic ballast for fluorescent lighting Switch mode power supplies Description TO This device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking (1) Package Packaging ST A C D E F TO-220 Tube 1. Product is pre-selected in DC current gain (group A, C, D, E and F). STMicroelectronics reserves the right to ship either groups according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details. May 2012 Doc ID 5262 Rev 10 1/12 This is information on a product in full production. 12
2 Contents ST13005 Contents 1 Electrical ratings Electrical characteristics Electrical characteristics (curves) Test circuits Package mechanical data Revision history /12 Doc ID 5262 Rev 10
3 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V CES Collector-emitter voltage (V BE = 0) 700 V V CEO Collector-emitter voltage (I B = 0) 400 V V EBO Emitter-base voltage (I C = 0) 9 V I C Collector current 4 A I CM Collector peak current (t P < 5 ms) 8 A I B Base current 2 A I BM Base peak current (t P < 5 ms) 4 A P TOT Total dissipation at T c 25 C 75 W T STG Storage temperature - 65 to 150 C T J Max. operating junction temperature 150 C Table 3. Thermal data Symbol Parameter Value Unit R thj-case Thermal resistance junction-case max 1.7 C/W R thj-amb Thermal resistance junction-amb max 62.5 C/W Doc ID 5262 Rev 10 3/12
4 Electrical characteristics ST Electrical characteristics T case = 25 C unless otherwise specified. Table 4. Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit I CES I EBO (1) V CEO(sus) (1) V CE(sat) V (1) BE(sat) (1)(2) h FE t s t f Collector cut-off current (V BE = 0) Emitter cut-off current (I C = 0) Collector-emitter sustaining voltage (I B = 0) Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain Resistive load Storage time Fall time V CE = 700 V V CE = 700 V T C =125 C 1 5 ma ma V EB = 9 V 1 ma I C =10 ma 400 V I C = 1 A _ I B = 0.2 A I C = 2 A I B = 0.5 A I C = 4 A I B = 1 A I C = 1 A I B = 0.2 A I C = 2 A _ I B = 0.5 A I C = 1 A Group A Group C Group D Group E Group F I C = 2 A V CE = 5 V V CE = 5 V I C = 2 A V CC = 125 A I B1 = - I B2 =0.4 A t p = 30 µs V V V V V 3 µs µs 1. Pulse test: pulse duration = 300 µs, duty cycle 2 %. 2. Product is pre-selected in DC current gain (group A, C, D, E and F). STMicroelectronics reserves the right to ship either groups according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details 4/12 Doc ID 5262 Rev 10
5 Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Derating curve Figure 4. DC current gain (V CE = 1.5 V) Figure 5. DC current gain (V CE = 5 V) Figure 6. Collector-emitter saturation voltage Figure 7. Base-emitter saturation voltage Doc ID 5262 Rev 10 5/12
6 Electrical characteristics ST13005 Figure 8. Inductive load fall time Figure 9. Inductive load storage time Figure 10. Resistive load fall time Figure 11. Resistive load storage time Figure 12. Reverse biased safe operating area 6/12 Doc ID 5262 Rev 10
7 Electrical characteristics 2.2 Test circuits Figure 13. Inductive load switching test circuit 1) Fast electronic switch 2) Non-inductive resistor 3) Fast recovery rectifier Figure 14. Resistive load switching test circuit 1) Fast electronic switch 2) Non-inductive resistor Doc ID 5262 Rev 10 7/12
8 Package mechanical data ST Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. 8/12 Doc ID 5262 Rev 10
9 Package mechanical data Table 5. Dim. TO-220 type A mechanical data mm. Min. Typ. Max. A b b c D D E e e F H J L L L L P Q Doc ID 5262 Rev 10 9/12
10 Package mechanical data ST13005 Figure 15. TO-220 type A drawing _typeA_Rev_S 10/12 Doc ID 5262 Rev 10
11 Revision history 4 Revision history Table 6. Document revision history Date Revision Changes 21-Jun Aug Updated mechanical data according to PCN APM-PWR/07/ Oct Updated marking in Table 1 15-Feb Updated marking in Table 1 Inserted: Table 3 Modified: h FE in Table 4 Updated mechanical data 15-May Updated marking in Table 1 and 4 Doc ID 5262 Rev 10 11/12
12 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY TWO AUTHORIZED ST REPRESENTATIVES, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12 Doc ID 5262 Rev 10
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STTH3R02QRL. Ultrafast recovery diode. Main product characteristics. Features and benefits. Description. Order codes DO-15 STTH3R02Q DO-201AD STTH3R02
Ultrafast recovery diode Main product characteristics I F(V) 3 V RRM 2 V T j (max) V F (typ) 175 C.7 V K t rr (typ) 16 ns Features and benefits Very low conduction losses Negligible switching losses K
STEVAL-IEG001V2. Smart real-time vehicle tracking system. Features
Smart real-time vehicle tracking system Data brief Features Real-time vehicle tracking through GPS/GSM/GPRS. Vehicle location coordinates acquired using a Telit GPS module and sent over GPRS to web server-based
AN2824 Application note
Application note STM32F10xxx I 2 C optimized examples Introduction The aim of this application note is to provide I 2 C firmware optimized examples based on polling, interrupts and DMA, covering the four
AN3359 Application note
Application note Low cost PCB antenna for 2.4GHz radio: Meander design 1 Introduction This application note is dedicated to the STM32W108 product family from STMicroelectronics. One of the main reasons
DATA SHEET. PBSS5540Z 40 V low V CEsat PNP transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2001 Jan 26. 2001 Sep 21.
DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D87 PBSS554Z 4 V low V CEsat PNP transistor Supersedes data of 21 Jan 26 21 Sep 21 FEATURES Low collector-emitter saturation voltage High current capability Improved
2PD601ARL; 2PD601ASL
Rev. 01 6 November 2008 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Table 1.
NE555 SA555 - SE555. General-purpose single bipolar timers. Features. Description
NE555 SA555 - SE555 General-purpose single bipolar timers Features Low turn-off time Maximum operating frequency greater than 500 khz Timing from microseconds to hours Operates in both astable and monostable
Description. IO and RF AGC. ASIC controller and power management. Carrier recovery loop. GPIO switch matrix. Lock indicator and monitoring DVBS2 FEC
Multi-standard advanced demodulator for satellite digital TV and data services set-top boxes Data Brief Features Demodulation DIRECTV TM and DVBS QPSK DVBS2 QPSK and 8PSK Digital Nyquist root filter with
BTW69-1200N. 50 A 1200 V non insulated SCR thyristor. Description. Features. Applications
50 1200 V non insulated SCR thyristor Datasheet - production data G K K G TOP3 non insulated Description vailable in non insulated TOP3 high power package, the BTW69-1200N is suitable for applications
2N6387, 2N6388. Plastic Medium-Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, 60-80 VOLTS
2N6388 is a Preferred Device Plastic MediumPower Silicon Transistors These devices are designed for generalpurpose amplifier and lowspeed switching applications. Features High DC Current Gain h FE = 2500
STP62NS04Z N-CHANNEL CLAMPED 12.5mΩ - 62A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET
N-CHANNEL CLAMPED 12.5mΩ - 62A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET TYPE V DSS R DS(on) I D STP62NS04Z CLAMPED
BC807; BC807W; BC327
Rev. 06 7 November 009 Product data sheet. Product profile. General description PNP general-purpose transistors. Table. Product overview Type number Package NPN complement NXP JEIT BC807 SOT - BC87 BC807W
M24LRxx/CR95HF application software installation guide
User manual M24LRxx/CR95HF application software installation guide Introduction This user manual describes the procedures to install the different software drivers required to use the DEVKIT-M24LR-A development
How To Write To An Eeprom Memory On A Flash Memory On An Iphone Or Ipro Memory On Microsoft Flash Memory (Eeprom) On A Microsoft Microsoft Powerbook (Ai) 2.2.2
Application note EEPROM emulation in STM32F10x microcontrollers Introduction Many applications require EEPROM (electrically erasable programmable read-only memory) for non-volatile data storage. For low-cost
DATA SHEET. BC875; BC879 NPN Darlington transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 May 28.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1999 May 28 2004 Nov 05 FEATURES High DC current gain (min. 1000) High current (max. 1 A) Low voltage (max. 80 V) Integrated
