BUX48/48A BUV48A/V48AFI
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1 BUX48/48A BU48A/48AFI HIGH POWER NPN SILICON TRANSISTORS STMicroelectronics PREFERRED SALESTYPES NPN TRANSISTOR HIGH OLTAGE CAPABILITY HIGH CURRENT CAPABILITY FAST SWITCHING SPEED APPLICATIONS SWITCH MODE POWER SUPPLIES FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONERTERS 1 TO TO-18 DESCRIPTION The BUX48/A, BU48A and BU48AFI are silicon Multiepitaxial Mesa NPN transistors mounted respectively in TO-3 metal case, TO-18 plastic package and ISOWATT18 fully isolated package. They are particulary intended for switching and industrial applications from single and tree-phase mains. INTERNAL SCHEMATIC DIAGRAM 1 3 ISOWATT18 For TO-3 Package Others Packages ABSOLUTE MAXIMUM RATINGS Symbol Parameter alue Unit BUX48 BUX48A BU48A BU48AFI CER Collector-Emitter oltage (R BE = 10Ω) CES Collector-Emitter oltage ( BE = 0) CEO Collector-Emitter oltage (I B = 0) EBO Emitter-Base oltage (IC = 0) 7 IC Collector Current 15 A I CM Collector Peak Current 30 A I CP Collector Peak Current non repetitive (t p <0) 55 A I B Base Current 4 A I BM Base Peak Current 0 A TO-3 TO-18 ISOWATT18 Ptot Total Dissipation at Tc = 5 o C W T stg Storage Temperature -65 to00-65 to to 150 o C T j Max. Operating Junction Temperature o C January 000 1/7
2 BUX48 / BUX48A / BU48A / BU48AFI THERMAL DATA TO-3 TO-18 ISOWATT18 Rthj-case Thermal Resistance Junction-case Max 1 1. o C/W ELECTRICAL CHARACTERISTICS (T case = 5 o C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICES Collector Cut-off Current ( BE = 0) ICER Collector Cut-off Current (RBE = 10 Ω) I EBO Emitter Cut-off Current (IC = 0) CEO(SUS) Collector-Emitter Sustaining oltage (I B = 0) EBO CE(sat) BE(sat) Emitter-Base oltage (I C = 0) Collector-Emitter Saturation oltage Base-Emitter Saturation oltage Pulsed: Pulse duration = 300, duty cycle % RESISTIE SWITCHING TIMES CE = rated CES CE = rated CES, CE = rated CER CE = rated CER, T c = 15 o C T c = 15 o C µa ma µa ma EB = 5 1 ma I C = 00 ma L= 5mH for BUX48 for BUX48A/48A/48AFI I E = 50 ma 7 30 for BUX48 IC = 10 A IB = A I C = 15 A I B = 4 A I C = 15 A I B = 3 A for BUX48A/48A/48AFI I B = 1.6 A IC = 1 A IB =.4 A for BUX48 IC = 10 A IB = A for BUX48A/48A/48AFI I B = 1.6 A Symbol Parameter Test Conditions Min. Typ. Max. Unit t on Turn-on Time for BUX48 CC = 150 I C = 10 A IB1 = A for BUX48A/48A/48AFI 1 CC = 150 I B1 = 1.6 A 1 ts Storage Time for BUX48 CC = 150 I C = 10 A I B1 = - I B = A for BUX48A/48A/48AFI 3 CC = 150 IB1 = - IB = 1.6 A 3 t f Fall Time for BUX48 CC = 150 I C = 10 A I B1 = - I B = A for BUX48A/48A/48AFI 0.8 CC = 150 I B1 = - I B = 1.6 A /7
3 BUX48 / BUX48A / BU48A / BU48AFI INDUCTIE SWITCHING TIMES Symbol Parameter Test Conditions Min. Typ. Max. Unit t s Storage Time for BUX48 CC = 300 IC = 10 A L B = 3 µh BE = -5 I B1 = A.7 for BUX48A/48A/48AFI 5 CC = 300 LB = 3 µh BE = -5 I B1 = 1.6 A 3 5 t f Fall Time for BUX48 CC = 300 IC = 10 A L B = 3 µh BE = -5 I B1 = A 0.16 for BUX48A/48A/48AFI 0.4 CC = 300 IC = 8 A L B = 3 µh BE = -5 I B1 = 1.6 A /7
4 BUX48 / BUX48A / BU48A / BU48AFI TO-3 MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A B C D E G N P R U P G A D C U B E N O R P003F 4/7
5 BUX48 / BUX48A / BU48A / BU48AFI TO-18 (SOT-93) MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A C D E F G H L L L L R Ø A E C D L5 L3 L L6 H G R 1 3 F P05A 5/7
6 BUX48 / BUX48A / BU48A / BU48AFI ISOWATT18 MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A C D D E F F F G H L L L L L L L N R DIA Weight : 4.9 g (typ.) - Maximum Torque (applied to mounting flange) Recommended: 0.8 Nm; Maximum: 1 Nm - The side of the dissipator must be flat within 80 µm P05C/A 6/7
7 BUX48 / BUX48A / BU48A / BU48AFI Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 000 STMicroelectronics Printed in Italy All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. 7/7
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B, A, B, C, B, C Amplifier Transistors NPN Silicon Features PbFree Package is Available* COLLECTOR 1 2 BASE MAXIMUM RATINGS Collector-Emitter oltage Collector-Base oltage Rating Symbol alue Unit CEO 65
BD239, BD239A, BD239B, BD239C NPN SILICON POWER TRANSISTORS
Copyright 1997, Power Innovations Limited, UK Designed for Complementary Use with the BD240 Series 30 W at 25 C Case Temperature TO-220 PACKAGE (TOP VIEW) 2 A Continuous Collector Current B 1 4 A Peak
L78MxxAB L78MxxAC. Precision 500 ma regulators. Features. Description
L78MxxAB L78MxxAC Precision 500 ma regulators Features Output current to 0.5 A Output voltages of 5; 6; 8; 9; 10; 12; 15; 18; 24 V Thermal overload protection Short circuit protection Output transition
TDA2040. 20W Hi-Fi AUDIO POWER AMPLIFIER
20W Hi-Fi AUDIO POWER AMPLIFIER DESCRIPTION The TDA2040 is a monolithic integrated circuit in Pentawatt package, intended for use as an audio class AB amplifier. Typically it provides 22W output power
CLASS-D VERTICAL DEFLECTION AMPLIFIER FOR TV AND MONITOR APPLICATION OUT CFLY + CFLY - BOOT VREG FEEDCAP FREQ. July 2001 1/8
CLASS-D VERTICAL DEFLECTION AMPLIFIER FOR TV AND MONITOR APPLICATION FEATURES PRELIMINARY DATA HIGH EFFICIENCY POWER AMPLIFIER NO HEATSINK SPLIT SUPPLY INTERNAL FLYBACK GENERATOR OUTPUT CURRENT UP TO.5
VNP5N07 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET
"OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE Vclamp RDS(on) Ilim VNP5N07 70 V 0.2 Ω 5 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM
2PD601ARL; 2PD601ASL
Rev. 01 6 November 2008 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Table 1.
L7800 SERIES POSITIVE VOLTAGE REGULATORS
SERIES POSITIVE VOLTAGE REGULATORS OUTPUT CURRENT UP TO 1.5 A OUTPUT VOLTAGES OF 5; 5.2; 6; 8; 8.5; 9; 12; 15; 18; 24V THERMAL OVERLOAD PROTECTION SHORT CIRCUIT PROTECTION OUTPUT TRANSITION SOA PROTECTION
BTW67 and BTW69 Series
BTW67 and BTW69 Series STNDRD 50 SCRs MIN FETURES: Symbol Value Unit I T(RMS) 50 V DRM /V RRM 600 to 1200 V G K I GT 80 m G K DESCRIPTION vailable in high power packages, the BTW67 / BTW69 Series is suitable
STP60NF06. N-channel 60V - 0.014Ω - 60A TO-220 STripFET II Power MOSFET. General features. Description. Internal schematic diagram.
N-channel 60V - 0.014Ω - 60A TO-220 STripFET II Power MOSFET General features Type V DSS R DS(on) I D STP60NF06 60V
BC337, BC337-25, BC337-40. Amplifier Transistors. NPN Silicon. These are Pb Free Devices. http://onsemi.com. Features MAXIMUM RATINGS
BC337, BC337-25, BC337-4 Amplifier Transistors NPN Silicon Features These are PbFree Devices COLLECTOR MAXIMUM RATINGS Rating Symbol alue Unit 2 BASE Collector Emitter oltage CEO 45 dc Collector Base oltage
ST202 5V POWERED MULTI-CHANNEL RS-232 DRIVERS AND RECEIVERS
5V POWERED MULTI-CHANNEL RS-232 DRIVERS AND RECEIVERS SUPPLY VOLTAGE RANGE: 4.5 TO 5.5V SUPPLY CURRENT NO LOAD (TYP): 1.5mA TRASMITTER OUTPUT VOLTAGE SWING (TYP): ± 9V TRANSITION SLEW RATE (TYP.): 12V/µs
ETP01-xx21. Protection for Ethernet lines. Features. Description. Applications. Benefits. Complies with the following standards
ETP0-xx2 Protection for Ethernet lines Features Differential and common mode protection Telcordia GR089 Intrabuilding: 50 A, 2/0 µs ITU-T K20/2: 40 A, 5/30 µs Low capacitance: 3 pf max at 0 V UL94 V0 approved
Vdc. Vdc. Adc. W W/ C T J, T stg 65 to + 200 C
2N6284 (NPN); 2N6286, Preferred Device Darlington Complementary Silicon Power Transistors These packages are designed for general purpose amplifier and low frequency switching applications. Features High
BD434/436/438. Symbol Parameter Value Units V CBO Collector-Base Voltage : BD434 : BD436 : BD438
Medium Power Linear and Switching Applications Complement to BD433, BD435 and BD437 respectively 1 TO26 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T C =25 C
STN3NF06L. N-channel 60 V, 0.07 Ω, 4 A, SOT-223 STripFET II Power MOSFET. Features. Application. Description
N-channel 60 V, 0.07 Ω, 4 A, SOT-223 STripFET II Power MOSFET Features Type V DSS (@Tjmax) Exceptional dv/dt capability Avalanche rugged technology 100% avalanche tested R DS(on) max STN3NF06L 60 V < 0.1
2N2222A. Small Signal Switching Transistor. NPN Silicon. MIL PRF 19500/255 Qualified Available as JAN, JANTX, and JANTXV. http://onsemi.com.
Small Signal Switching Transistor NPN Silicon Features MILPRF19/ Qualified Available as JAN, JANTX, and JANTXV COLLECTOR MAXIMUM RATINGS (T A = unless otherwise noted) Characteristic Symbol Value Unit
Obsolete Product(s) - Obsolete Product(s)
SYNCHRONOUS PROGRAMMABLE 4-BIT BINARY COUNTER WITH ASYNCHRONOUS CLEAR INTERNAL LOOK-AHEAD FOR FAST COUNTING CARRY OUTPUT FOR CASCADING SYNCHRONOUSLY PROGRAMMABLE LOW-POWER TTL COMPATIBILITY STANDARDIZED
Description. Table 1. Device summary. Order codes. TO-220 (single gauge) TO-220 (double gauge) D²PAK (tape and reel) TO-220FP
1.2 V to 37 V adjustable voltage regulators Description Datasheet - production data TO-220 TO-220FP The LM217, LM317 are monolithic integrated circuits in TO-220, TO-220FP and D²PAK packages intended for
TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP) Complementary Silicon Plastic Power Transistors
TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. Features
TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) Darlington Complementary Silicon Power Transistors
TIP140, TIP141, TIP142, (); TIP145, TIP146, TIP147, () Darlington Complementary Silicon Power Transistors Designed for generalpurpose amplifier and low frequency switching applications. Features High DC
Obsolete Product(s) - Obsolete Product(s)
Vertical deflection booster for 3 App TV/monitor applications with 0 V flyback generator Features Figure. Heptawatt package Power amplifier Flyback generator Stand-by control Output current up to 3.0 App
5A 3A. Symbol Parameter Value Unit
STP5NA50 STP5NA50FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP5NA50 STP5NA50FI 500 V 500 V
AN1826 APPLICATION NOTE TRANSIENT PROTECTION SOLUTIONS: Transil diode versus Varistor
AN1826 APPLICATION NOTE TRANSIENT PROTECTION SOLUTIONS: Transil diode versus A. BREMOND / C. KAROUI Since the seventies, electronic modules are more and more present in our life. This is the case for our
BC847/BC547 series. 45 V, 100 ma NPN general-purpose transistors. NPN general-purpose transistors in small plastic packages.
Rev. 7 December 8 Product data sheet. Product profile. General description NPN general-purpose transistors in small plastic packages. Table. Product overview Type number [] Package PNP complement NXP JEITA
Table 1. Absolute maximum ratings (T amb = 25 C) Symbol Parameter Value Unit. ISO 10605 - C = 330 pf, R = 330 Ω : Contact discharge Air discharge
Automotive dual-line Transil, transient voltage suppressor (TVS) for CAN bus Datasheet - production data Complies with the following standards ISO 10605 - C = 150 pf, R = 330 Ω : 30 kv (air discharge)
L6234. Three phase motor driver. Features. Description
Three phase motor driver Features Supply voltage from 7 to 52 V 5 A peak current R DSon 0.3 Ω typ. value at 25 C Cross conduction protection TTL compatible driver Operating frequency up to 150 khz Thermal
STTH1R04-Y. Automotive ultrafast recovery diode. Features. Description
Automotive ultrafast recovery diode Features Datasheet - production data K SMA STTH1R4AY Table 1. Device summary Symbol Value I F(AV) 1 A V RRM 4 V T j (max) 175 C V F (typ) t rr (typ) A K.9 V 14 ns A
AT-41486 Up to 6 GHz Low Noise Silicon Bipolar Transistor
AT- Up to 6 GHz Low Noise Silicon Bipolar Transistor Data Sheet Description Avago s AT- is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT- is housed in
BZW50. Transil, transient voltage surge suppressor (TVS) Features. Description
Transil, transient voltage surge suppressor (TVS) Datasheet production data Features Peak pulse power: 5000 W (10/0 µs) Stand-off voltage range from 10 V to 180 V Unidirectional and bidirectional types
2N4921G, 2N4922G, 2N4923G. Medium-Power Plastic NPN Silicon Transistors 1.0 AMPERE GENERAL PURPOSE POWER TRANSISTORS 40 80 VOLTS, 30 WATTS
,, Medium-Power Plastic NPN Silicon Transistors These highperformance plastic devices are designed for driver circuits, switching, and amplifier applications. Features Low Saturation Voltage Excellent