Low frequency transistor ( 20V, 5A)

Transcription

1 2SB386 / 2SB42 / Transistors Low frequency transistor (, A) 2SB386 / 2SB42 / Features ) Low CE(sat). CE(sat) = 0.3 (Typ.) (IC/IB = 4A / 0.A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD98 / 2SD28 / 2SD97. External dimensions (Unit : mm) 2SB386 ± ± ±0. () ±0. (2) (3) 0.4±0. 0.±0. 0.4±0..±0..±0. 3.0± SB42.± Structure Epitaxial planar type PNP silicon transistor () Base ROHM : MPT3 (2) Collector EIAJ : SC-62 (3) Emitter Abbreviated symbol: BH ROHM : CPT3 EIAJ : SC-63 () Base (2) Collector (3) Emitter 6.8±0.2 2.± ± ± ± ±0.2 C0. 0.6± ± ±0. 0.±0..0±0.2 () (2) (3) 0.6Max..0 0.±0. 4.±0. () (2) (3) ±0. ROHM : AT () Emitter (2) Collector (3) Base Denotes hfe Rev.A /4

2 2SB386 / 2SB42 / Absolute maximum ratings () Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature 2SB386 2SB42 Symbol Limits Unit CBO CEO EBO IC PC Tj Tstg 30 6 A(DC) A(Pulse) 0. W 2 W 2 W W(Tc=) W 3 to C C Single pulse, Pw=ms 2 When mounted on a mm ceramic board. 3 Printed circuit board glass epoxy board.6 mm thick with copper plating mm 2 or larger. Electrical characteristics () Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Parameter voltage Transition frequency Output capacitance 2SB386,2SB42 Symbol BCBO BCEO BEBO ICBO IEBO CE(sat) hfe ft Cob Min Typ. Max. Unit Conditions µa µa 390 MHz pf IC= µa IC= ma IE= µa CB= EB= IC/IB= 4A/ 0.A CE= 2, IC= 0.A CE= 6, IE=mA, f=mhz CB=, IE=0A, f=mhz Measured using pulse current. Packaging specifications and hfe Package Taping Code T TL T2 Type hfe Basic ordering unit (pieces) SB386 PQR 2SB42 PQR QR hfe values are classified as follows : Item P Q R hfe 82 to 80 to to 390 Rev.A 2/4

3 2SB386 / 2SB42 / Electrical characteristic curves 2 0m 0m m m m m m 2m m Fig. CE= 2 Ta= C BASE TO EMITTER OLTAGE : BE () Grounded emitter propagation characteristics ma 4mA 40mA 3mA IB=0A COLLECTOR TO EMITTER OLTAGE : CE () Fig.2 30mA 2mA ma ma ma ma Grounded emitter output characteristics k 0 0 Fig.3 CE= DC current gain vs. 2 m 2m m k 0 0 Ta= C CE= m 2m m k 0 0 Ta= C CE= 2 m 2m m COLLECTOR SATURATION OLTAGE : CE(sat) () m m IC/IB=/ 40/ 30/ / Fig.4 DC current gain vs. Fig. DC current gain vs. Fig.6 COLLECTOR SATURATION OLTAGE : CE(sat) () Ta= C 0.0 2m m lc/lb= 2 COLLECTOR SATURATION OLTAGE : CE(sat) () m m lc/lb=30 Ta= C 2 COLLECTOR SATURATION OLTAGE : CE(sat) () m m Ta= C lc/lb=40 2 Fig.7 Fig.8 Fig.9 Rev.A 3/4

4 2SB386 / 2SB42 / COLLECTOR SATURATION OLTAGE : CE(sat) () lc/lb= 0.0 2m m Ta= C 2 TRANSEITION FREQUENCY : ft (MHz) CE= EMITTER CURRENT : IE (ma) COLLECTOR OUTPUT CAPACITANCE : Cob (pf) f=mhz IE=0A COLLECTOR TO BASE OLTAGE : CB () Fig. Fig. Gain bandwidth product vs. emitter current Fig.2 Collector output capacitance vs. collector-base voltage EMITTER INTPUT CAPACITANCE : Cib (pf) f=mhz IC=0A EMITTER TO BASE OLTAGE : EB () Fig.3 Emitter input capacitance vs. emitter-base voltage 2 0m 0m m m m m DC Pw=ms Pw=ms Single nonrepetitive pulse COLLECTOR TO EMITTER OLTAGE : CE () Fig.4 Safe operation area F(2SB42) Rev.A 4/4

5 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex (Item 6) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix-Rev.