DATASHEET pcs Assortment Transistor Set ersion 01/15 1) BC547 - TO-92 Plastic-Encapsulate Transistors @ 28pcs 2) BC557 - TO-92 Plastic-Encapsulate Transistors @ 28pcs 3) BC337 - TO-92 Plastic-Encapsulate Transistors @ 12pcs 4) BC327 - TO-92 Plastic-Encapsulate Transistors @ 12pcs 5) BC517 - TO-92 Darlington Transistors @ 6pcs 6) BC516 - TO-92 Darlington Transistors @ 6pcs 7) BD139 - TO-126 Plastic-Encapsulate Transistors @ 4pcs 8) BD140 - TO-126 Plastic-Encapsulate Transistors @ 4pcs Distributed by Conrad Electronic SE This data sheet is a publication by Conrad Electronic SE, Klaus-Conrad-Str. 1, D-92240 Hirschau (www.conrad.com). All rights including translation reserved. Reproduction by any method, e.g. photocopy, microfilming, or the capture in electronic data processing systems require the prior written approval by the editor. Reprinting, also in part, is prohibited. This data represent the technical status at the time of printing. Changes in technology and equipment reserved. Copyright 2013 by Conrad Electronic SE.
TO-92 Plastic-Encapsulate Transistors TO 92 BC547 TRANSISTOR (NPN) FEATURES High oltage Complement to BC556,BC557,BC558 1. COLLECTOR 2. BASE 3. EMITTER MAXIMUM RATINGS ( unless otherwise noted) Symbol Parameter alue Unit BC546 80 CBO CEO EBO Collector-Base oltage BC547 50 BC548 30 BC546 65 Collector-Emitter oltage BC547 45 BC548 30 BC546 6 Emitter-Base oltage BC547 6 BC548 5 Collector Current-Continuous 0.1 A P C Collector Power Dissipation 625 mw R θja Thermal Resistance from Junction to Ambient 200 /W T j Junction Temperature 150 T stg Storage Temperature -55~+150 C,Dec,2013
ELECTRICAL CHARACTERISTICS ( unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit BC546 80 Collector-base breakdown voltage BC547 (BR)CBO = 0.1mA,I E =0 50 BC548 30 BC546 65 Collector-emitter breakdown voltage BC547 (BR)CEO =1mA,I B =0 45 BC548 30 BC546 6 Emitter-base breakdown voltage BC547 (BR)EBO I E =μa, =0 6 BC548 5 BC546 CB =70,I E =0 0.1 μa Collector cut-off current Collector cut-off current BO BC547 CB =50,I E =0 0.1 μa BC548 CB =30,I E =0 0.1 μa BC546 CE =60,I B =0 0.1 μa EO BC547 CE =45,I B =0 0.1 μa BC548 CE =30,I B =0 0.1 μa Emitter cut-off current I EBO EB =5, =0 0.1 μa DC current gain h FE CE =5, =2mA 1 800 Collector-emitter saturation voltage CE(sat) =ma,i B =5mA 0.3 Base-emitter saturation voltage BE(sat) =ma,i B =5mA 1.1 Base-emitter voltage BE CE =5, =2mA 0.58 0.7 CE =5, =ma 0.75 Collector output capacitance C ob CB =,I E =0, f=1mhz 4.5 pf Transition frequency f T CE=5,IC=mA, f=mhz 150 MH CLASSIFICATION of h FE RANK A B C RANGE 1-220 200-450 420-800 C,Dec,2013
Typical Characteristics BC547 3.5 3.0 2.5 2.0 1.5 1.0 0.5 COMMON EMITTER Static Characteristic.0uA 9.0uA 8.0uA 7.0uA 6.0uA 5.0uA 4.0uA 3.0uA 2.0uA I B =1.0uA DC CURRENT GAIN h FE 00 0 COMMON EMITTER CE = 5 h FE = 0.0 0 1 2 3 4 5 6 7 COLLECTOR-EMITTER OLTAGE CE () 1 0 β=20 BEsat 0 β=20 CEsat BASE-EMITTER SATURATION OLTAGE BEsat (m) 800 600 Ta = COLLECTOR-EMITTER SATURATION OLTAGE CEsat (m) = 400 0.1 1 COLLECTOR CURREMT 0.1 1 COLLECTOR CURREMT BE 750 P C 1 COMMON EMITTER CE =5 = COLLECTOR POWER DISSIPATION P C (mw) 625 500 375 250 125 0.1 300 600 900 1200 BASE-EMMITER OLTAGE BE (m) 0 0 25 50 75 125 150 AMBIENT TEMPERATURE ( ) C,Dec,2013
TO-92 Plastic-Encapsulate Transistors BC557 TRANSISTOR (PNP) TO 92 FEATURES High oltage Complement to BC546,BC547,BC548 1. COLLECTOR 2. BASE 3. EMITTER MAXIMUM RATINGS ( unless otherwise noted) Symbol Parameter alue Unit BC556-80 CBO CEO Collector-Base oltage BC557-50 BC558-30 BC556-65 Collector-Emitter oltage BC557-45 BC558-30 EBO Emitter-Base oltage -5 Collector Current-Continuous -0.1 A P C Collector Power Dissipation 625 mw R θja Thermal Resistance from Junction to Ambient 200 /W T j Junction Temperature 150 T stg Storage Temperature -55~+150 A,May,2012 B,Feb,2013
ELECTRICAL CHARACTERISTICS ( unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit BC556-80 Collector-base BC557 (BR)CBO = -0.1mA,I E =0-50 breakdown voltage BC558-30 BC556-65 Collector-emitter BC557 (BR)CEO =-2mA,I B =0-45 breakdown voltage BC558-30 Emitter-base breakdown voltage (BR)EBO I E =-μa, =0-5 BC556 CB =-70,I E =0-0.1 μa Collector cut-off current Collector cut-off current BO BC557 CB =-45,I E =0-0.1 μa BC558 CB =-25,I E =0-0.1 μa BC556 CE =-60,I B =0-0.1 μa EO BC557 CE =-40,I B =0-0.1 μa BC558 CE =-25,I B =0-0.1 μa Emitter cut-off current I EBO EB =-5, =0-0.1 μa DC current gain h FE CE =-5, =-2mA 120 800 Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage CE(sat) BE(sat) BE =-ma,i B =-0.5mA -0.3 =-ma,i B =-5mA -0.65 =-ma,i B =-0.5mA -0.8 =-ma,i B =-5mA -1 CE =-5, =-2mA -0.55-0.7 CE =-5, =-ma -0.82 Collector output capacitance C ob CB =-,I E =0, f=1mhz 6 pf BC556 150 MHz Transition frequency BC557 CE=-5,IC=-mA, f=mhz 3150 MHz f T BC558 150 MHz CLASSIFICATION of h FE RANK A B C RANGE 120-220 180-460 420-800 B,Feb,2013
TO-92 Plastic-Encapsulate Transistors BC337 TRANSISTOR (NPN) FEATURES Power dissipation MAXIMUM RATINGS (Ta unless otherwise noted) Symbol Parameter alue Unit CBO Collector-Base oltage BC337 50 BC338 30 CEO Collector-Emitter oltage BC337 45 BC338 25 EBO Emitter-Base oltage 5 Collector Current -Continuous 800 ma P D Total Device Dissipation 625 mw T j Junction Temperature 150 T stg Storage Temperature -55-150 TO-92 1. COLLECTOR 2.BASE 3. EMITTER ELECTRICAL CHARACTERISTICS (Ta unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage BC337 BC338 Collector-emitter breakdown voltage BC337 BC338 CBO = ua, I E =0 CEO = ma, I B =0 Emitter-base breakdown voltage EBO I E = ua, =0 5 Collector cut-off current BC337 BO CB = 45, I E =0 0.1 BC338 CB = 25, I E =0 0.1 ua Collector cut-off current BC337 CE = 40, I B =0 0.2 EO BC338 CE = 20, I B =0 0.2 ua Emitter cut-off current I EBO EB = 4, =0 0.1 ua BC337/BC338 BC337-16/BC338-16 BC337-25/BC338-25 BC337-40/BC338-40 h FE(1) CE =1, = ma DC current gain h FE(2) CE =1, = 300mA 60 Collector-emitter saturation voltage CE(sat) =500mA, I B = 50mA 0.7 Base-emitter saturation voltage BE(sat) = 500mA, I B =50mA 1.2 Base-emitter voltage BE CE =1, = 300mA 1.2 Transition frequency f T CE = 5, = ma f = MHz 2 MHz Collector Output Capacitance Cob CB =,I E =0 f=1mhz 15 pf 50 30 45 25 160 250 630 250 400 630 B,Jun,2012
Typical Characterisitics BC337 250 200 150 50 Static Characteristic 800uA 720uA 640uA 560uA 480uA 400uA 320uA COMMON EMITTER 240uA 160uA I B =80uA 0 0 1 2 3 4 5 6 DC CURRENT GAIN h FE 0 h FE = 1 COMMON EMITTER CE =3 800 COLLECTOR-EMITTER OLTAGE CE () 0 CEsat BEsat COLLECTOR-EMITTER SATURATION OLTAGE CEsat (m) = BASE-EMITTER SATURATION OLTAGE BEsat (m) 0 = 1 1 β= 800 1 β= 800 TRANSITION FREQUENCY f T (MHz) f T 1 COMMON EMITTER CE =5 CAPACITANCE C (pf) C ob / C ib C ib C ob CB / EB 1 0.1 1 REERSE OLTAGE () f=1mhz I E =0/ =0 20 650 P C 600 550 COLLECTOR POWER DISSIPATION P C (mw) 500 450 400 350 300 250 200 150 50 0 0 25 50 75 125 150 AMBIENT TEMPERATURE ( ) B,Jun,2012
TO-92 Plastic-Encapsulate Transistors BC327 TRANSISTOR (PNP) TO-92 FEATURES Power dissipation MAXIMUM RATINGS (Ta unless otherwise noted) Symbol Parameter alue Unit CBO Collector-Base oltage BC327 BC328 CEO Collector-Emitter oltage BC327 BC328-50 -30-45 -25 EBO Emitter-Base oltage -5 Collector Current -Continuous -800 ma P C Collector Power Dissipation 625 mw T j Junction Temperature 150 T stg Storage Temperature -55-150 1. COLLECTOR 2.BASE 3. EMITTER ELECTRICAL CHARACTERISTICS (Ta unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage = -ua, I E =0 BC327 BC328 CBO -50-30 Collector-emitter breakdown voltage = -ma, I B =0 BC327 CEO -45 BC328-25 Emitter-base breakdown voltage EBO I E = -ua, =0-5 Collector cut-off current Collector cut-off current BC327 BC328 BC327 BC328 BO CB = -45, I E =0 CB = -25, I E =0 EO CE = -40, I B =0 CE = -20, I B =0 Emitter cut-off current I EBO EB = -4, =0-0.1 ua DC current gain h FE(1) CE =-1, = -ma 630 h FE(2) CE =-1, = -300mA 40 Collector-emitter saturation voltage CE(sat) =-500mA, I B = -50mA -0.7 Base-emitter saturation voltage BE(sat) = -500mA, I B =-50mA -1.2 Base-emitter voltage BE CE =-1, = -300mA -1.2 Transition frequency f T CE = -5, = -ma f = MHz 260 MHz Collector Output Capacitance Cob CB =-,I E =0 f=1mhz 12 pf CLASSIFICATION OF h FE Rank 16 25 40 Range -250 160-400 250-630 -0.1-0.1-0.2-0.2 ua ua B,Feb,2012
Typical Characterisitics BC327-300 -200 - Static Characteristic -1.0mA -0.9mA -0.8mA -0.7mA -0.6mA -0.5mA -0.4mA -0.3mA COMMON EMITTER -0.2mA I B =-0.1mA -0-0 -2-4 -6 COLLECTOR-EMITTER OLTAGE CE () DC CURRENT GAIN h FE 0 = h FE -7 - - -800 COMMON EMITTER CE = -1-1 CEsat -2 BEsat COLLECTOR-EMITTER SATURATION OLTAGE CEsat () -0.1 = β= β= -0.01-0.1-0.3-1 - - -800-1 - - -800 BASE-EMITTER SATURATION OLTAGE BEsat () -1 = -800 BE 0 f T - - -1 = -0.1-0.0-0.3-0.6-0.9-1.2 COMMON EMITTER CE =-1 TRANSITION FREQUENCY f T (MHz) -5 COMMON EMITTER CE =-5 - - BASE-EMMITER OLTAGE BE () C ob / C ib CB / EB 700 P C CAPACITANCE C (pf) C ib C ob f=1mhz I E =0/ =0 =25 COLLECTOR POWER DISSIPATION P C (mw) 600 500 400 300 200 1-0.1-1 - REERSE OLTAGE R () -20 0 0 25 50 75 125 150 AMBIENT TEMPERATURE ( ) B,Feb,2012
NPN Silicon COLLECTOR 1 BASE 2 EMITTER 3 MAXIMUM RATINGS Rating Symbol alue Unit Collector Emitter oltage CES 30 dc Collector Base oltage CB 40 dc Emitter Base oltage EB dc Collector Current Continuous IC 1.0 Adc Total Power Dissipation @ TA = 25 C Derate above 25 C PD 625 12 mw mw/ C 1 2 3 CASE 29 04, STYLE 17 TO 92 (TO 226AA) Total Power Dissipation @ TC = 25 C Derate above 25 C PD 1.5 12 Watts mw/ C Operating and Storage Junction Temperature Range TJ, Tstg 55 to +150 C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient R JA 200 C/W Thermal Resistance, Junction to Case R JC 83.3 C/W ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) OFF CHARACTERISTICS Collector Emitter Breakdown oltage (IC = 2.0 madc, BE = 0) Characteristic Symbol Min Typ Max Unit (BR)CES 30 dc Collector Base Breakdown oltage (IC = Adc, IE = 0) Emitter Base Breakdown oltage (IE = nadc, IC = 0) Collector Cutoff Current (CE = 30 dc) Collector Cutoff Current (CB = 30 dc, IE = 0) Emitter Cutoff Current (EB = dc, IC = 0) (BR)CBO 40 dc (BR)EBO dc ICES 500 nadc ICBO nadc IEBO nadc Motorola Small Signal Transistors, FETs and Diodes Device Da 1
ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) (Continued) ON CHARACTERISTICS(1) DC Current Gain (IC = 20 madc, CE = 2.0 dc) Characteristic Symbol Min Typ Max Unit hfe 30,000 Collector Emitter Saturation oltage (IC = madc, IB = 0.1 madc) Base Emitter On oltage (IC = madc, CE = 5.0 dc) SMALL SIGNAL CHARACTERISTICS Current Gain Bandwidth Product(2) (IC = madc, CE = 5.0 dc, f = MHz) CE(sat) 1.0 dc BE(on) 1.4 dc ft 200 MHz 1. Pulse Test: Pulse Width 2.0%. 2. ft = hfe ftest RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model
NOISE CHARACTERISTICS (CE = 5.0 dc, TA = 25 C) en, NOISE OLTAGE (n) 500 200 50 20 5.0 BANDWIDTH = 1.0 Hz RS 0 20 50 200 500 1 k 2 k 5 k k 20 k 50 k k f, FREQUENCY (Hz) µa IC = 1.0 ma Figure 2. Noise oltage µa in, NOISE CURRENT (pa) 2.0 1.0 0.7 0.5 0.3 0.2 BANDWIDTH = 1.0 Hz IC = 1.0 ma 0.1 0.07 0.05 µa µa 0.03 0.02 20 50 200 500 1 k 2 k 5 k k 20 k 50 k k f, FREQUENCY (Hz) Figure 3. Noise Current T, TOTAL WIDEBAND NOISE OLTAGE (n) 200 BANDWIDTH = Hz TO 15.7 khz 70 IC = µa 50 30 µa 20 1.0 ma 1.0 2.0 5.0 20 50 200 500 RS, SOURCE RESISTANCE (kω) 0 Figure 4. Total Wideband Noise oltage NF, NOISE FIGURE (db) 14 BANDWIDTH = Hz TO 15.7 khz 12 µa 8.0 µa 6.0 4.0 IC = 1.0 ma 2.0 0 1.0 2.0 5.0 20 50 200 500 RS, SOURCE RESISTANCE (kω) 0 Figure 5. Wideband Noise Figure
SMALL SIGNAL CHARACTERISTICS C, CAPACITANCE (pf) 20 7.0 5.0 3.0 TJ = 25 C Cibo Cobo hfe, SMALL SIGNAL CURRENT GAIN 4.0 2.0 1.0 0.8 0.6 0.4 CE = 5.0 f = MHz TJ = 25 C 2.0 0.04 0.1 0.2 0.4 1.0 2.0 4.0 20 40 R, REERSE OLTAGE (OLTS) Figure 6. Capacitance 0.2 0.5 1.0 2.0 0.5 20 50 200 500 IC, COLLECTOR CURRENT Figure 7. High Frequency Current Gain hfe, DC CURRENT GAIN 200 k k 70 k 50 k 30 k 20 k k 7.0 k 5.0 k 3.0 k TJ = 125 C 25 C 55 C 2.0 k 5.0 7.0 20 30 50 70 200 300 500 IC, COLLECTOR CURRENT Figure 8. DC Current Gain CE = 5.0 CE, COLLECTOR EMITTER OLTAGE (OLTS) 3.0 TJ = 25 C 2.5 IC = ma 50 ma 250 ma 500 ma 2.0 1.5 1.0 0.5 0.1 0.2 0.5 1.0 2.0 5.0 20 50 200 500 0 IB, BASE CURRENT (µa) Figure 9. Collector Saturation Region, OLTAGE (OLTS) 1.6 TJ = 25 C 1.4 BE(sat) @ IC/IB = 0 1.2 BE(on) @ CE = 5.0 1.0 0.8 CE(sat) @ IC/IB = 0 0.6 5.0 7.0 20 30 50 70 200 300 500 IC, COLLECTOR CURRENT Figure. On oltages R θ, TEMPERATURE COEFFICIENTS (m/ C) 1.0 2.0 3.0 4.0 5.0 APPLIES FOR IC/IB hfe/3.0 R C FOR CE(sat) B FOR BE 25 C TO 125 C 55 C TO 25 C 25 C TO 125 C 55 C TO 25 C 6.0 5.0 7.0 20 30 50 70 200 300 500 IC, COLLECTOR CURRENT Figure 11. Temperature Coefficients
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 D = 0.5 0.2 0.1 0.05 SINGLE PULSE SINGLE PULSE ZθJC(t) = r(t) RθJC ZθJA(t) = r(t) RθJA TJ(pk) TC = P(pk) ZθJC(t) TJ(pk) TA = P(pk) ZθJA(t) 0.01 0.1 0.2 0.5 1.0 2.0 5.0 20 50 200 500 1.0 k 2.0 k 5.0 k k t, TIME (ms) Figure 12. Thermal Response IC, COLLECTOR CURRENT 1.0 k 700 500 300 200 70 50 30 20 0.4 TA = 25 C CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 1.0 ms TC = 25 C µs 1.0 s 0.6 1.0 2.0 4.0 6.0 20 40 CE, COLLECTOR EMITTER OLTAGE (OLTS) t1 FIGURE A PP tp 1/f DUTY CYCLE t1 f t 1 tp PEAK PULSE POWER = PP PP Figure 13. Active Region Safe Operating Area Design Note: Use of Transient Thermal Resistance Data
PACKAGE DIMENSIONS SEATING PLANE R A X X H 1 N F G P N B L K C D J SECTION X X NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.175 0.205 4.45 5.20 B 0.170 0.2 4.32 5.33 C 0.125 0.165 3.18 4.19 D 0.016 0.022 0.41 0.55 F 0.016 0.019 0.41 0.48 G 0.045 0.055 1.15 1.39 H 0.095 0.5 2.42 2.66 J 0.015 0.020 0.39 0.50 K 0.500 12.70 L 0.250 6.35 N 0.080 0.5 2.04 2.66 P 0. 2.54 R 0.115 2.93 0.135 3.43 CASE 029 04 (TO 226AA) ISSUE AD STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER 6 Motorola Small Signal Transistors, FETs and Diodes Device Data
BC516 BC516 PNP Darlington Transistor This device is designed for applications reguiring extremely high current gain at currents to 1mA. Sourced from process 61. Absolute Maximum Ratings T A =25 C unless otherwise noted 1 TO-92 1. Collector 2. Base 3. Emitter Symbol Parameter alue Units CEO Collector-Emitter oltage 30 CBO Collector-Base oltage 40 EBO Emitter-Base oltage Collector Current - Continuous 1 A P D Total Power Dissipation T A = 25 C 625 mw T J, T STG Operating and Storage Junction Temperature Range -55 ~ +150 C Electrical Characteristics T A =25 C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units CEO Collector-Emitter Breakdown oltage = 2mA, I B = 0 30 CBO Collector-Base Breakdown oltage = µa, I E = 0 40 EBO Emitter-Base Breakdown oltage I E = µa, = 0 BO Collector Cutoff Current CB = 30, I E = 0 na h FE DC Current Gain = 20mA, CE = 2 30,00 0 CE (sat) Collector-Emitter Saturation oltage = ma, I B = 0.1mA 1 BE (on) Base-Emitter On oltage = ma, CE = 5 1.4 f T Current Gain Bandwidth Product (2) = ma, CE = 5, f = MHz 200 MHZ NOTES: 1. Pulse Test Pulse Width 2% 2. f T = Ih fe I f test Thermal Characteristics T A =25 C unless otherwise noted Symbol Parameter Max. Units R θja Thermal Resistance, Junction to Ambient 200 C/W R θjc Thermal Resistance, Junction to Case 83.3 C/W
Package Dimensions BC516 TO-92 4.58 +0.25 0.15 3.86MAX 0.46 ±0. 1.27TYP [1.27 ±0.20] 1.02 ±0. 0.38 +0. 0.05 1.27TYP [1.27 ±0.20] 3.60 ±0.20 (R2.29) (0.25) 14.47 ±0.40 4.58 ±0.20 0.38 +0. 0.05 Dimensions in Millimeters
TO-126 Plastic-Encapsulate Transistors BD135/137/139 TRANSISTOR (NPN) TO 126 FEATURES High Current Complement To BD136, BD138 And BD140 1. EMITTER 2. COLLECTOR 3. BASE CBO CEO MAXIMUM RATINGS ( =25 unless otherwise noted) Symbol Parameter alue Unit BD137 60 Collector-Base oltage BD135 45 BD139 80 BD137 60 Collector-Emitter oltage BD135 45 BD139 80 EBO Emitter-Base oltage 5 Collector Current 1.5 A P C Collector Power Dissipation 1.25 W R JA Thermal Resistance From Junction To Ambient /W T j Junction Temperature 150 T stg Storage Temperature -55~+150 ELECTRICAL CHARACTERISTICS ( =25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage (BR)CBO = 0.1mA,I E =0 BD135 BD137 BD139 45 60 80 Collector-emitter sustaining voltage CEO(SUS) =0.03A,I B =0 BD135 45 BD137 BD139 60 80 Emitter-base breakdown voltage (BR)EBO I E =0.1mA, =0 5 Collector cut-off current BO CB =30,I E =0 0.1 A Emitter cut-off current I EBO EB =5, =0 A DC current gain h FE(1) h FE(2) h FE(3) Collector-emitter saturation voltage CE(sat) Base-emitter voltage BE Pulse test: pulse width 350 s, duty cycle 2.0%. CLASSIFICATION OF h FE(1) RANK 6 16 RANGE 40-63-160-250 CE =2, =150mA 40 250 CE =2, =5mA 25 CE =2, =500mA 25 =500mA,I B =50mA 0.5 CE =2, =500mA 1
Typical Characteristics 0.4 Static Characteristic 300 h FE (A) 0.3 0.2 0.1 COMMON EMITTER =25 2mA 1.8mA 1.6mA 1.4mA 1.2mA 1mA 0.8mA 0.6mA 0.4mA DC CURRENT GAIN h FE 250 200 150 50 CE = 2 = o C =25 o C I B =0.2mA 0.0 0 2 4 6 8 COLLECTOR-EMITTER OLTAGE CE () 0 0 1500 BASE-EMITTER SATURATION OLTAGE BEsat (m) 0 800 600 = BEsat =25 = COLLECTOR-EMITTER SATURATION OLTAGE CEsat (m) 350 300 250 200 150 = CEsat = =25 50 400 0 1500 0 0 1500 1500 0 CE=2 Ta= o C BE Ta=25 COLLECTOR POWER DISSIPATION P c (mw) 1600 1400 1200 0 800 600 400 P c 200 400 600 800 0 BASE-EMITTER OLTAGE BE (m) 0 0 25 50 75 125 150 AMBIENT TEMPERATURE ( )
TO-126 Package Outline Dimensions Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 2.500 2.900 0.098 0.114 A1 1. 1.500 0.043 0.059 b 0.660 0.860 0.026 0.034 b1 1.170 1.370 0.046 0.054 c 0.450 0.600 0.018 0.024 D 7.400 7.800 0.291 0.307 E.600 11.000 0.417 0.433 e 2.290 TYP 0.090 TYP e1 4.480 4.680 0.176 0.184 h 0.000 0.300 0.000 0.012 L 15.300 15.700 0.602 0.618 L1 2. 2.300 0.083 0.091 P 3.900 4. 0.154 0.161 3.000 3.200 0.118 0.126
TO-126 Plastic-Encapsulate Transistors BD140 TRANSISTOR (PNP) FEATURES High Current Complement To BD139 TO 126 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS ( unless otherwise noted) 3. BASE Symbol Parameter alue Unit CBO CEO Collector-Base oltage -80 Collector-Emitter oltage -80 EBO Emitter-Base oltage -5 Collector Current -1.5 A P C Collector Power Dissipation 1.25 W R θja Thermal Resistance From Junction To Ambient /W T j Junction Temperature 150 T stg Storage Temperature -55~+150 ELECTRICAL CHARACTERISTICS ( unless otherwise specified) Parameter Symbol T est conditions Min Typ Max Unit Collector-base breakdown voltage (BR)CBO = -0.1mA,I E =0 - Collector-emitter sustaining voltage CEO(SUS) =-0.03A,I B =0 Emitter-base breakdown voltage (BR)EBO I E =-0.1mA, =0-5 Collector cut-off current BO CB =-30,I E =0-0.1 μa Emitter cut-off current I EBO EB =-5, =0 - μa DC current gain h FE(1) h FE(2) h FE(3) Collector-emitter saturation voltage CE(sat) Base-emitter voltage BE Pulse test: pulse width 350μs, duty cycle 2.0%. CLASSIFICATION OF h FE(1) RANK 6 16 RANGE 40-63-160-250 CE =-2, =-150mA 40 250 CE =-2, =-5mA 25 CE =-2, =-500mA 25 =-500mA,I B =-50mA -0.5 CE =-2, =-500mA -1
Typical Characteristics -180-150 -120-90 -60-30 Static Characteristic -1mA -0.9mA -0.8mA -0.7mA -0.6mA -0.5mA -0.4mA -0.3mA COMMON EMITTER -0.2mA DC CURRENT GAIN h FE 300 200 h FE = COMMON EMITTER CE =-2 I B =-0.1mA -0-0 -2-4 -6 COLLECTOR-EMITTER OLTAGE CE () 0-1 - - -0-1500 -0 β= CEsat -1200 β= BEsat COLLECTOR-EMITTER SATURATION OLTAGE CEsat (m) - = BASE-EMITTER SATURATION OLTAGE BEsat (m) -800-400 = - -1 - - -0-1500 -0-1 - - -0-1500 -1500-0 - - COMMON EMITTER CE =-2 = BE CAPACITANCE C (pf) 00 0 C ob / C ib C ib C ob CB / EB f=1mhz I E =0/ =0-1 -200-400 -600-800 -0 BASE-EMMITER OLTAGE BE (m) 1-0.1-1 - REERSE OLTAGE () -20 f T 1.50 P C TRANSITION FREQUENCY f T (MHz) 30 COMMON EMITTER CE = -2 COLLECTOR POWER DISSIPATION P C (W) 1.25 1.00 0.75 0.50 0.25 - -30-0.00 0 25 50 75 125 150 AMBIENT TEMPERATURE ( )
TO-126 Package Outline Dimensions Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 2.500 2.900 0.098 0.114 A1 1. 1.500 0.043 0.059 b 0.660 0.860 0.026 0.034 b1 1.170 1.370 0.046 0.054 c 0.450 0.600 0.018 0.024 D 7.400 7.800 0.291 0.307 E.600 11.000 0.417 0.433 e 2.290 TYP 0.090 TYP e1 4.480 4.680 0.176 0.184 h 0.000 0.300 0.000 0.012 L 15.300 15.700 0.602 0.618 L1 2. 2.300 0.083 0.091 P 3.900 4. 0.154 0.161 Φ 3.000 3.200 0.118 0.126