SILICON TRANSISTOR 2SC3355

Transcription

1 DATA SHEET SILICON TRANSISTOR 2SC3355 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has lange dynamic range and good current characteristic. PACKAGE DIMENSIONS in millimeters (inches) 5.2 MAX. (4 MAX.) FEATURES Low Noise and High Gain NF = 1.1 db TYP., Ga = 8. db IC = 7 ma, f = 1. GHz NF = 1.1 db TYP., Ga = 9. db IC = 4 ma, f = 1. GHz High Power Gain MAG = 11 db IC = 2 ma, f = 1. GHz ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Collector to Base Voltage VCBO 2 V Collector to Emitter Voltage VCEO 12 V Emitter to Base Voltage VEBO 3. V Collector Current IC ma Total Power Dissipation PT 6 mw Junction Temperature Tj 15 C Storage Temperature Tstg 65 to +15 C ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Collector Cutoff Current ICBO 1. A VCB = V, IE = Emitter Cutoff Current IEBO 1. A VEB = 1. V, IC = DC Current Gain hfe , IC = 2 ma Gain Bandwidth Product ft 6.5 GHz, IC = 2 ma Output Capacitance Cob pf VCB = V, IE =, f = 1. MHz Insertion Power Gain S21e db, IC = 2 ma, f = 1. GHz Noise Figure NF 1.1 db, IC = 7 ma, f = 1. GHz Noise Figure NF db, IC = 4 ma, f = 1. GHz hfe Classification 1.27 (.5) Base 2. Emitter 3. Collector 2.54 (.1).5 (.2) 1.77 MAX. (.69 MAX.) 5.5 MAX. (16 MAX.) 14 MIN. (.551 MIN.) 4.2 MAX. (.165 MAX.) EIAJ : SC-43B JEDEC : TO-92 IEC : PA33 Class Marking K K hfe 5 to 3 Document No. P355EJ3V1DS (3rd edition) Date Published March 1997 N Printed in Japan 1985

2 TYPICAL CHARACTERISTICS (TA = 25 C) PT-Total Power Dissipation-mW 5 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Free air With heat sink 3.8 heat sink Cre-Feed-back Capacitance-pF FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE f = 1. MHz 5 15 TA-Ambient Temperature- C VCB-Collector to Base Voltage-V 2 DC CURRENT GAIN vs. 15 INSERTION GAIN vs. f = 1. GHz hfe-dc Current Gain 5 2 S21e 2 -Insertion Gain-dB GAIN BANDWIDTH PROUDCT vs. INSERTION GAIN, MAXIMUM GAIN vs. FREQUENCY Gmax ft-gain Bandwidth Product-GHz Gmax-Maximum Gain-dB S21e 2 -Insertion Gain-dB 2 IC = 2 ma S21e f-frequency-ghz 2

3 NF-Noise Figure-dB NOISE FIGURE vs. f = 1. GHz IM2, IM3 (db) INTERMODULATIOn DISTORTION vs. IM3 IM at V + db µ V/5 Ω Rg = Re = 5 Ω 3 IM2 IM3 f = 9 + MHz f = MHz S-PARAMETER, IC = 2 ma, ZO = 5 f (MHz) S11 S11 S21 S21 S12 S12 S22 S , IC = 4 ma, ZO = 5 f (MHz) S11 S11 S21 S21 S12 S12 S22 S

4 SC3355 S-PARAMETER S11e, S22e-FREQUENCY CONDITION WAVELENGTHS TOWARD GENERATOR IN DEGREES ANGLE OF REFLECTION COEFFCIENT 16 WAVELENGTHS TOWARD LOAD ZO ) ( +JX POSITIVE REACTANCE COMPONENT.3 ZO ) ( JX REACTANCE COMPONENT ( R GHz IC = 2 ma ZO ) S11e GHz IC = 4 ma IC = 4 ma GHz GHz.8 1. IC = 2 ma S22e NEGATIVE REACTANCE COMPONENT S21e-FREQUENCY CONDITION IC = 4 ma S12e-FREQUENCY CONDITION IC = 4 ma GHz S12e 3 S21e 2. GHz GHz GHz

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