FQP17P10 P-Channel QFET MOSFET - 100 V, - 16.5 A, 190 m Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. Features March 2013-16.5 A, -100 V, R DS(on) = 190 m (Max.) @ = -10 V, I D = - 8.25 A Low Gate Charge (Typ. 30 nc) Low Crss (Typ. 100 pf) 100% Avalanche Tested 175 C Maximum Junction Temperature Rating D G D S TO-220 G S Absolute Maximum Ratings T C = 25 C unless otherwise noted Symbol Parameter FQP17P10 Unit S Drain-Source Voltage -100 V I D Drain Current - Continuous (T C = 25 C) -16.5 A - Continuous (T C = 100 C) -11.7 A I DM Drain Current - Pulsed (Note 1) -66 A S Gate-Source Voltage 30 V E AS Single Pulsed Avalanche Energy (Note 2) 580 mj I AR Avalanche Current (Note 1) -16.5 A E AR Repetitive Avalanche Energy (Note 1) 10 mj dv/dt Peak Diode Recovery dv/dt (Note 3) -6.0 V/ns P D Power Dissipation (T C = 25 C) 100 W - Derate above 25 C 0.67 W/ C T J, T STG Operating and Storage Temperature Range -55 to +175 C T L Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 C Thermal Characteristics Symbol Parameter FQP17P10 Unit R JC Thermal Resistance, Junction-to-Case, Max. 1.5 C/W R CS Thermal Resistance, Case-to-Sink, Typ. 0.5 C/W R JA Thermal Resistance, Junction-to-Ambient, Max. 62.5 C/W 2002 Fairchild Semiconductor Corporation 1 ww.fairchildsemi.com
Electrical Characteristics T C = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Unit Off Characteristics BS Drain-Source Breakdown Voltage = 0 V, I D = -250 A -100 -- -- V BS Breakdown Voltage Temperature / T J Coefficient I D = -250 A, Referenced to 25 C -- -0.1 -- V/ C I DSS = -100 V, = 0 V -- -- -1 A Zero Gate Voltage Drain Current = -80 V, T C = 150 C -- -- -10 A I GSSF Gate-Body Leakage Current, Forward = -30 V, = 0 V -- -- -100 na I GSSR Gate-Body Leakage Current, Reverse = 30 V, = 0 V -- -- 100 na On Characteristics (th) Gate Threshold Voltage =, I D = -250 A -2.0 -- -4.0 V R DS(on) Static Drain-Source On-Resistance = -10 V, I D = -8.25 A -- 0.14 0.19 g FS Forward Transconductance = -40 V, I D = -8.25 A -- 9.9 -- S Dynamic Characteristics C iss Input Capacitance = -25 V, = 0 V, -- 850 1100 pf C oss Output Capacitance f = 1.0 MHz -- 310 400 pf C rss Reverse Transfer Capacitance -- 100 130 pf Switching Characteristics t d(on) Turn-On Delay Time -- 17 45 ns = -50 V, I D = -16.5 A, t r Turn-On Rise Time R G = 25 -- 200 410 ns t d(off) Turn-Off Delay Time -- 45 100 ns t f Turn-Off Fall Time (Note 4) -- 100 210 ns Q g Total Gate Charge = -80 V, I D = -16.5 A, -- 30 39 nc Q gs Gate-Source Charge = -10 V -- 4.8 -- nc Q gd Gate-Drain Charge (Note 4) -- 17 -- nc Drain-Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain-Source Diode Forward Current -- -- -16.5 A I SM Maximum Pulsed Drain-Source Diode Forward Current -- -- -66 A V SD Drain-Source Diode Forward Voltage = 0 V, I S = -16.5 A -- -- -4.0 V t rr Reverse Recovery Time = 0 V, I S = -16.5 A, -- 120 -- ns Q rr Reverse Recovery Charge di F / dt = 100 A/ s -- 0.52 -- C Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 3.2mH, I AS = -16.5A, = -25V, R G = 25 Starting T J = 25 C 3. I SD -16.5A, di/dt 300A/ s, BS, Starting T J = 25 C 4. Essentially independent of operating temperature 2002 Fairchild Semiconductor Corporation 2 ww.fairchildsemi.com
Typical Characteristics 10 1 10 1 -, Drain-Source Voltage [V] 0.7 Top : -15.0 V -10.0 V -8.0 V -7.0 V -6.5 V -5.5 V -5.0 V Bottom : -4.5 V 1. 250μ s Pulse Test 2. T C = 25 Figure 1. On-Region Characteristics 10 1 175 25-55 2 4 6 8 10 -, Gate-Source Voltage [V] 1. = -40V 2. 250μ s Pulse Test Figure 2. Transfer Characteristics R DS(on) [ ], Drain-Source On-Resistance 0.6 0.5 0.4 0.3 0.2 0.1 = - 10V = - 20V Note : T J = 25 R, Reverse Drain Current [A] 10 1 175 25 1. = 0V 2. 250μ s Pulse Test 0.0 0 20 40 60 80 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -V SD, Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Capacitance [pf] 2200 2000 1800 1600 1400 1200 1000 800 600 400 200 C oss C iss C rss C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd 1. = 0 V 2. f = 1 MHz -, Gate-Source Voltage [V] 12 10 8 6 4 2 = -20V = -50V = -80V Note : I D = -16.5 A 0 10 1, Drain-Source Voltage [V] 0 0 5 10 15 20 25 30 35 Q G, Total Gate Charge [nc] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics Dimensions in Millimeters 2002 Fairchild Semiconductor Corporation 3 ww.fairchildsemi.com
Typical Characteristics (Continued) -BS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 0.8-100 -50 0 50 100 150 200 10 2 10 1 T J, Junction Temperature [ o C] Operation in This Area is Limited by R DS(on) 1. T C = 25 o C 2. T J = 175 o C 3. Single Pulse 10 1 10 2 -, Drain-Source Voltage [V] DC 1. = 0 V 2. I D = -250 μa Figure 7. Breakdown Voltage Variation vs. Temperature 100 s 1 ms 10 ms R DS(ON), (Normalized) Drain-Source On-Resistance 2.5 2.0 1.5 1.0 0.5 0.0-100 -50 0 50 100 150 200 20 16 12 8 4 T J, Junction Temperature [ o C] 0 25 50 75 100 125 150 175 T C, Case Temperature [ ] 1. = -10 V 2. I D = -8.25 A Figure 8. On-Resistance Variation vs. Temperature Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature Z θ JC (t), Thermal Response D=0.5 0.2 0.1 0.05 0.02 0.01 single pulse N otes : 1. Z θ JC (t) = 1.5 /W M ax. 2. D uty F actor, D =t 1 /t 2 3. T JM - T C = P DM * Z θ JC (t) P DM t 1 t 2 10-2 10-5 10-4 10-3 10-2 10 1 t 1, Square W ave Pulse Duration [sec] Figure 11. Transient Thermal Response Curve 2002 Fairchild Semiconductor Corporation 4 ww.fairchildsemi.com
12V 200nF -3mA 50KΩ 300nF Gate Charge Test Circuit & Waveform Same Type as DUT -10V Q gs DUT Resistive Switching Test Circuit & Waveforms Q g Q gd Charge R L t on t off t d(on) t r t d(off) tf R G 10% -10V DUT 90% Unclamped Inductive Switching Test Circuit & Waveforms L E AS = ---- 1 LI 2 2 AS BS -------------------- BS - I D t p Time R G I D (t) (t) -10V DUT I AS t p BS Dimensions in Millimeters 2002 Fairchild Semiconductor Corporation 5 ww.fairchildsemi.com
Peak Diode Recovery dv/dt Test Circuit & Waveforms + DUT _ I SD Driver R G Compliment of DUT (N-Channel) L dv/dt controlled by RG I SD controlled by pulse period ( Driver ) Gate Pulse Width D = -------------------------- Gate Pulse Period 10V I SD ( DUT ) ( DUT ) Body Diode Reverse Current I RM di/dt I FM, Body Diode Forward Current V SD Body Diode Forward Voltage Drop Body Diode Recovery dv/dt 2002 Fairchild Semiconductor Corporation 6 ww.fairchildsemi.com
Package Dimensions TO-220 Dimensions in Millimeters 2002 Fairchild Semiconductor Corporation 7 ww.fairchildsemi.com
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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. 2002 Fairchild Semiconductor Corporation 8 ww.fairchildsemi.com Rev. I64