BC517 NPN Darlington Transistor

Transcription

1 B517 NPN Darlington Transistor Features This device is designed for applications requiring extremely high current gain at currents to 1. A. Sourced from process September 215 TO ollector 2. Base 3. Emitter Straight Lead Bulk Packing Bent Lead Tape & Reel Ammo Packing Ordering Information Part Number Top Mark Package Packing Method B517_D74Z B517 TO-92 3L (Bent Lead) Ammo (1), (2) Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T A = 25 unless otherwise noted. Symbol Parameter Value Unit V EO ollector-emitter Voltage 3 V V BO ollector-base Voltage 4 V V EBO Emitter-Base Voltage 1 V I - ontinuous 1.2 A T J, T STG Operating and Storage Junction Temperature Range -55 to +15 Notes: 1. These ratings are based on a maximum junction temperature of These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operations. 25 Fairchild Semiconductor orporation B517 Rev. 1.1

2 Thermal haracteristics (3) Values are at T A = 25 unless otherwise noted. Symbol Parameter Value Unit Total Device Dissipation, T A = mw P D Derate Above mw/ R θj Thermal Resistance, Junction-to-ase 83.3 /W R θja Thermal Resistance, Junction-to-Ambient 2 /W Note: 3. PB size: FR-4, 76 mm x 114 mm x 1.57 mm (3. inch x 4.5 inch x.62 inch) with minimum land pattern size. Electrical haracteristics Values are at T A = 25 unless otherwise noted. Symbol Parameter onditions Min. Typ. Max. Unit V EO ollector-emitter Breakdown Voltage I = 2. ma, I B = 3 V V BO ollector-base Breakdown Voltage I = 1 μa, I E = 4 V V EBO Emitter-Base Breakdown Voltage I E = 1 na, I = 1 V I BO ollector ut-off urrent V B = 3 V, I E = 1 na h FE D urrent Gain V E = 2 V, I = 2 ma 3, V E (sat) ollector-emitter Saturation Voltage I = 1 ma, I B =.1 ma 1 V V BE (on) Base-Emitter On Voltage I = 1 ma, V E = 5. V 1.4 V 25 Fairchild Semiconductor orporation B517 Rev

3 Typical Performance haracteristics h - TYPIAL PULSED URRENT GAIN (K) FE V = 5V E I - OLLETOR URRENT (A) 25 V - OLLETOR EMITTER VOLTAGE (V) ESAT β = I - OLLETOR URRENT (ma) 25 Figure 1. Typical Pulsed urrent Gain vs. Figure 2. ollector-emitter Saturation Voltage vs. V - BASE EMITTER VOLTAGE (V) BESAT β = I - OLLETOR URRENT (ma) 25 V - BASE EMITTER ON VOLTAGE (V) BEON I - OLLETOR URRENT (ma) 25 V = 5V E Figure 3. Base-Emitter Saturation Voltage vs. Figure 4. Base Emitter On Voltage vs. I - OLLETOR URRENT (na) BO 1 V B= 3V T A- AMBIENT TEMPERATURE ( ) BV - BREAKDOWN VOLTAGE (V) ER RESISTANE (k Ω) Figure 5. ollector ut-off urrent vs. Ambient Temperature Figure 6. ollector-emitter Breakdown Voltage with Resistance Between Emitter-Base 25 Fairchild Semiconductor orporation B517 Rev

4 Typical Performance haracteristics (ontinued) APAITANE (pf) V ib - OLLETOR VOLTAGE(V) f = 1. MHz ob f - GAIN BANDWIDTH PRODUT (MHz) T V ce = 5V I - OLLETOR URRENT (ma) Figure 7. Input and Output apacitance vs. Reverse Voltage Figure 8. Gain Bandwidth Product vs. 1 P - POWER DISSIPATION (W) D TO o TEMPERATURE ( ) Figure 9. Power Dissipation vs. Ambient Temperature 25 Fairchild Semiconductor orporation B517 Rev

5 Physical Dimensions Figure 1. 3-Lead, TO-92, Molded,.2 In Line Spacing Lead Form, Ammo, Tape and Reel Packing 25 Fairchild Semiconductor orporation B517 Rev

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Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Preliminary First Production Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make No Identification Needed Full Production changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. Obsolete Not In Production The datasheet is for reference information only. Rev. I76 Fairchild Semiconductor orporation