PN2222A NPN General-Purpose Amplifier



Similar documents
BD135 / 137 / 139 NPN Epitaxial Silicon Transistor

MBR20200CT Dual High Voltage Schottky Rectifier

TIP41A / TIP41B / TIP41C NPN Epitaxial Silicon Transistor

1N5401-1N5408 General-Purpose Rectifiers

P6KE6V8(C)A - P6KE440(C)A 600 W Transient Voltage Suppressors

BC546 / BC547 / BC548 / BC549 / BC550 NPN Epitaxial Silicon Transistor

S1A - S1M General Purpose Rectifiers

FGH40N60UFD 600 V, 40 A Field Stop IGBT

RS1A - RS1M Fast Rectifiers

FMBS2383 NPN Epitaxial Silicon Transistor

Applications. Pin 1 TOP. WL-CSP 0.8X0.8 Thin

FQPF2N70. N-Channel QFET MOSFET 700 V, 2.0 A, 6.3 Ω. FQPF2N70 N-Channel QFET MOSFET. Absolute Maximum Ratings T C = 25 C unless otherwise noted.

BC517 NPN Darlington Transistor

LM78XX / LM78XXA 3-Terminal 1 A Positive Voltage Regulator

Symbol Parameter Ratings Units V DSS Drain-to-Source Voltage 80 V V GS Gate-to-Source Voltage ±20 V Drain Current - Continuous (V

QRE1113, QRE1113GR Minature Reflective Object Sensor

FQP5N60C / FQPF5N60C N-Channel QFET MOSFET

CD4040BC, 12-Stage Ripple Carry Binary Counters CD4060BC, 14-Stage Ripple Carry Binary Counters

MID400 AC Line Monitor Logic-Out Device

FSAL200 Wide Bandwidth Quad 2:1 Analog Multiplexer / De-multiplexer Switch

74LVX132 Low Voltage Quad 2-Input NAND Schmitt Trigger

BD434/436/438. Symbol Parameter Value Units V CBO Collector-Base Voltage : BD434 : BD436 : BD438

TA = 25 C unless otherwise noted. Symbol Parameter Value Units

P2N2222ARL1G. Amplifier Transistors. NPN Silicon. These are Pb Free Devices* Features.

MPS2222, MPS2222A. NPN Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS MARKING DIAGRAMS THERMAL CHARACTERISTICS

Description. TO-220F FDPF Series. Symbol Parameter FDP26N40 FDPF26N40 Units V DSS Drain to Source Voltage 400 V V GSS Gate to Source Voltage ±30 V

FOD060L, FOD260L 3.3V/5V High Speed-10 MBit/s Logic Gate Optocouplers

FDS6679AZ P-Channel PowerTrench MOSFET -30V, -13A, 9mΩ General Description

FODM3011, FODM3012, FODM3022, FODM3023, FODM3052, FODM Pin Full Pitch Mini-Flat Package Random-Phase Triac Driver Output Optocouplers

FSA832 USB 2.0 High-Speed (480 Mbps) Charger Detection IC with Isolation Switch

74VHC112 Dual J-K Flip-Flops with Preset and Clear

2N3903, 2N3904. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS

FPF2163/4/5 Full Function Load Switch with Adjustable Current Limit

BDX33/A/B/C. Symbol Parameter Value Units V CBO Collector-Base Voltage : BDX33 : BDX33A : BDX33B : BDX33C

2N3903, 2N3904. General Purpose Transistors. NPN Silicon. Features Pb Free Package May be Available. The G Suffix Denotes a Pb Free Lead Finish

2N3906. General Purpose Transistors. PNP Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS

2N4401. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS THERMAL CHARACTERISTICS

Features. TA=25 o C unless otherwise noted

BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor

BC546B, BC547A, B, C, BC548B, C. Amplifier Transistors. NPN Silicon. Pb Free Package is Available* Features. MAXIMUM RATINGS

2N2222A. Small Signal Switching Transistor. NPN Silicon. MIL PRF 19500/255 Qualified Available as JAN, JANTX, and JANTXV.

BC546B, BC547A, B, C, BC548B, C. Amplifier Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS

40 V, 200 ma NPN switching transistor

FL3100T Low-Side Gate Driver with PWM Dimming Control for Smart LED Lighting

MPSA92, MPSA93. High Voltage Transistors. PNP Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM

BC327, BC327-16, BC327-25, BC Amplifier Transistors. PNP Silicon. These are Pb Free Devices* Features MAXIMUM RATINGS

65 V, 100 ma PNP/PNP general-purpose transistor

BC337, BC337-25, BC Amplifier Transistors. NPN Silicon. These are Pb Free Devices. Features MAXIMUM RATINGS

45 V, 100 ma NPN/PNP general-purpose transistor

2N6387, 2N6388. Plastic Medium-Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, VOLTS

DATA SHEET. MMBT3904 NPN switching transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Oct Feb 03.

DISCRETE SEMICONDUCTORS DATA SHEET BC856; BC857; BC858

Features 1.7 A, 20 V. R DS(ON) Symbol Parameter Ratings Units

BUZ11. 30A, 50V, Ohm, N-Channel Power MOSFET. Features. [ /Title (BUZ1 1) /Subject. (30A, 50V, Ohm, N- Channel. Ordering Information

BC846/BC546 series. 65 V, 100 ma NPN general-purpose transistors. NPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages.

Features S 1. TA=25 o C unless otherwise noted. (Note 1b) 0.8

FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET

2N4921G, 2N4922G, 2N4923G. Medium-Power Plastic NPN Silicon Transistors 1.0 AMPERE GENERAL PURPOSE POWER TRANSISTORS VOLTS, 30 WATTS

IRF A, 100V, Ohm, N-Channel Power MOSFET. Features. Ordering Information. Symbol. Packaging. Data Sheet January 2002

D D D G S. E AS Single Pulse Avalanche Energy (Note 4) 337 mj Power Dissipation (Note 1a) 2.5 P D Power Dissipation (Note 1b) 1.

IRF840. 8A, 500V, Ohm, N-Channel Power MOSFET. Features. Ordering Information. Symbol. Packaging. Data Sheet January 2002

FDD5N50F N-Channel MOSFET, FRFET 500V, 3.5A, 1.55Ω Features

IRF640, RF1S640, RF1S640SM

DISCRETE SEMICONDUCTORS DATA SHEET

2N6056. NPN Darlington Silicon Power Transistor DARLINGTON 8 AMPERE SILICON POWER TRANSISTOR 80 VOLTS, 100 WATTS

Vdc. Vdc. Adc. W W/ C T J, T stg 65 to C

QFET TM FQP50N06. Features. TO-220 FQP Series

2PD601ARL; 2PD601ASL

BC807; BC807W; BC327

DATA SHEET. BC875; BC879 NPN Darlington transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 May 28.

BC847/BC547 series. 45 V, 100 ma NPN general-purpose transistors. NPN general-purpose transistors in small plastic packages.

DATA SHEET. PBSS5540Z 40 V low V CEsat PNP transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2001 Jan Sep 21.

45 V, 100 ma NPN general-purpose transistors

NPN wideband transistor in a SOT89 plastic package.

DATA SHEET. BST50; BST51; BST52 NPN Darlington transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Feb 20.

TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP) Complementary Silicon Plastic Power Transistors

AT Up to 6 GHz Low Noise Silicon Bipolar Transistor

Taping code. Reel size (mm) 2SCR513P MPT T ,000 NC

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1020

PHOTOTRANSISTOR OPTOCOUPLERS

MJD112 (NPN), MJD117 (PNP) Complementary Darlington Power Transistors. DPAK For Surface Mount Applications

TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) Darlington Complementary Silicon Power Transistors

BD238. Low voltage PNP power transistor. Features. Applications. Description. Low saturation voltage PNP transistor

DISCRETE SEMICONDUCTORS DATA SHEET. BFQ34 NPN 4 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14

Y.LIN ELECTRONICS CO.,LTD.

2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor

2STBN15D100. Low voltage NPN power Darlington transistor. Features. Application. Description

NPN Darlington Power Silicon Transistor Qualified per MIL-PRF-19500/472

P D Operating Junction Temperature T J 200 C Storage Temperature Range T stg 65 to +150 C

Transcription:

PN2222A NPN General-Purpose Amplifier Features This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. EBC TO-92 July 2014 Ordering Information Part Number Top Mark Package Packing Method PN2222ABU PN2222A TO-92 3L Bulk PN2222ATA PN2222A TO-92 3L Ammo PN2222ATF PN2222A TO-92 3L Tape and Reel PN2222ATFR PN2222A TO-92 3L Tape and Reel (1), (2) Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T A = 25 C unless otherwise noted. Symbol Parameter Value Unit V CEO Collector-Emitter Voltage 40 V V CBO Collector-Base Voltage 75 V V EBO Emitter-Base Voltage 6.0 V I C Collector Current 1.0 A T STG Operating and Storage Junction Temperature Range -55 to 150 C Note: 1. These rating are based on a maximum junction temperature of 150 C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operation. PN2222A Rev. 1.1.0

Thermal Characteristics (3) Values are at T A = 25 C unless otherwise noted. Symbol Parameter Max. Unit Total Device Dissipation 625 mw P D Derate Above 25 C 5.0 mw/ C R θjc Thermal Resistance, Junction to Case 83.3 C/W R θja Thermal Resistance, Junction to Ambient 200 C/W Note: 3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. PN2222A Rev. 1.1.0 2

Electrical Characteristics Values are at T A = 25 C unless otherwise noted. Symbol Parameter Conditions Min. Max. Unit Off Characteristics BV (BR)CEO Collector-Emitter Breakdown Voltage (4) I C = 10 ma, I B = 0 40 V BV (BR)CBO Collector-Base Breakdown Voltage I C = 10 μa, I E = 0 75 V BV (BR)EBO Emitter-Base Breakdown Voltage I E = 10 μa, I C = 0 6.0 V I CEX Collector Cut-Off Current V CE = 60 V, V EB(off) = 3.0 V 10 na I CBO Collector Cut-Off Current V CB = 60 V, I E = 0 0.01 V CB = 60 V, I E = 0, T A = 125 C 10 μa I EBO Emitter Cut-Off Current V EB = 3.0 V, I C = 0 10 na I BL Base Cut-Off Current V CE = 60 V, V EB(off) = 3.0 V 20 na On Characteristics I C = 0.1 ma, V CE = 10 V 35 I C = 1.0 ma, V CE = 10 V 50 I C = 10 ma, V CE = 10 V 75 h FE DC Current Gain I C = 10 ma, V CE = 10 V, T A = -55 C 35 I C = 150 ma, V CE = 10 V (4) 100 300 I C = 150 ma, V CE = 1 V (4) 50 I C = 500 ma, V CE = 10 V (4) 40 V CE(sat) Collector-Emitter Saturation Voltage (4) I C = 150 ma, I B = 15 ma 0.3 I C = 500 ma, I B = 50 ma 1.0 V BE(sat) Base-Emitter Saturation Voltage (4) I C = 150 ma, I B = 15 ma 0.6 1.2 I C = 500 ma, I B = 50 ma 2.0 Small Signal Characteristics I f T Current Gain Bandwidth Product C = 20 ma, V CE = 20 V, f = 100 MHz 300 MHz C obo Output Capacitance V CB = 10 V, I E = 0, f = 1 MHz 8.0 pf C ibo Input Capacitance V EB = 0.5 V, I C = 0, f = 1 MHz 25 pf rb C c NF Collector Base Time Constant Noise Figure Real Part of Common-Emitter Re(h ie ) High Frequency Input Impedance Switching Characteristics I C = 20 ma, V CB = 20 V, f = 31.8 MHz I C = 100 μa, V CE = 10 V, R S = 1.0 kω, f = 1.0 khz I C = 20 ma, V CE = 20 V, f = 300 MHz V V 150 ps 4.0 db 60 Ω t d Delay Time V CC = 30 V, V EB(off) = 0.5 V, 10 ns t r Rise Time I C = 150 ma, I B1 = 15 ma 25 ns t s Storage Time V CC = 30 V, I C = 150 ma, 225 ns t f Fall Time I B1 = I B2 = 15 ma 60 ns Note: 4. Pulse test: pulse width 300 μs, duty cycle 2.0%. PN2222A Rev. 1.1.0 3

Physical Dimensions TO-92 (Bulk) D Figure 1. 3-LEAD, TO92, JEDEC TO-92 COMPLIANT STRAIGHT LEAD CONFIGURATION (OLD TO92AM3) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/za/za03d.pdf. For current tape and reel specifications, visit Fairchild Semiconductor s online packaging area: http://www.fairchildsemi.com/packing_dwg/pkg-za03d_bk.pdf. PN2222A Rev. 1.1.0 4

Physical Dimensions (Continued) TO-92 (Ammo, Tape and Reel) Figure 2. 3-LEAD, TO-92, MOLDED 0.200 IN LINE SPACING LEAD FORM (J61Z OPTION) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/za/za03f.pdf. For current tape and reel specifications, visit Fairchild Semiconductor s online packaging area: http://www.fairchildsemi.com/packing_dwg/pkg-za03f_bk.pdf. PN2222A Rev. 1.1.0 5

TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower AX-CAP * BitSiC Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic DEUXPEED Dual Cool EcoSPARK EfficientMax ESBC Fairchild Fairchild Semiconductor FACT Quiet Series FACT FAST FastvCore FETBench FPS F-PFS FRFET Global Power Resource SM GreenBridge Green FPS Green FPS e-series Gmax GTO IntelliMAX ISOPLANAR Making Small Speakers Sound Louder and Better MegaBuck MICROCOUPLER MicroFET MicroPak MicroPak2 MillerDrive MotionMax mwsaver OptoHiT OPTOLOGIC OPTOPLANAR PowerTrench PowerXS Programmable Active Droop QFET QS Quiet Series RapidConfigure * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. Saving our world, 1mW/W/kW at a time SignalWise SmartMax SMART START Solutions for Your Success SPM STEALTH SuperFET SuperSOT -3 SuperSOT -6 SuperSOT -8 SupreMOS SyncFET Sync-Lock * TinyBoost TinyBuck TinyCalc TinyLogic TINYOPTO TinyPower TinyPWM TinyWire TranSiC TriFault Detect TRUECURRENT * SerDes UHC Ultra FRFET UniFET VCX VisualMax VoltagePlus XS DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I68 Fairchild Semiconductor Corporation www.fairchildsemi.com