pplications l Reset Switch for ctive Clamp Reset DC-DC converters SMPS MOSFET PD - 95862 HEXFET Power MOSFET V DSS R DS(on) max I D -150V 150m:@ = -V -27 Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C OSS to Simplify Design (See pp. Note N1) l Fully Characterized valanche Voltage and Current G D S TO-220B bsolute Maximum Ratings Parameter Max. Units V DS Drain-to-Source Voltage -150 V Gate-to-Source Voltage ± 20 I D @ T C = 25 C Continuous Drain Current, @ V -27 I D @ T C = C Continuous Drain Current, @ V -19 I DM Pulsed Drain Current c -1 P D @T C = 25 C Maximum Power Dissipation 250 W Linear Derating Factor 1.6 W/ C dv/dt Peak Diode Recovery dv/dt h 8.2 V/ns T J Operating Junction and -55 to + 175 C T STG Storage Temperature Range Soldering Temperature, for seconds 300 (1.6mm from case ) lbf in (1.1N m) Mounting torque, 6-32 or M3 screw Thermal Resistance Parameter Typ. Max. Units R θjc Junction-to-Case g 0.61 C/W R θcs Case-to-Sink, Flat, Greased Surface g 0.50 R θj Junction-to-mbient g 62 Notes through are on page 7 www.irf.com 1 04/22/04
Static @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage -150 V = 0V, I D = -250µ V (BR)DSS / T J Breakdown Voltage Temp. Coefficient -0.17 V/ C Reference to 25 C, I D = -1m R DS(on) Static Drain-to-Source On-Resistance 120 150 mω = -V, I D = -16 f (th) Gate Threshold Voltage -3.0-5.0 V V DS =, I D = -250µ I DSS Drain-to-Source Leakage Current -25 µ V DS = -120V, = 0V -250 V DS = -120V, = 0V, T J = 150 C I GSS Gate-to-Source Forward Leakage - n = -20V Gate-to-Source Reverse Leakage = 20V Dynamic @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 11 S V DS = -50V, I D = -16 Q g Total Gate Charge 71 1 I D = -16 Q gs Gate-to-Source Charge 21 nc V DS = -120V Q gd Gate-to-Drain ("Miller") Charge 32 = -V f t d(on) Turn-On Delay Time 21 V DD = -75V t r Rise Time 70 ns I D = -16 t d(off) Turn-Off Delay Time 35 R G = 3.9Ω t f Fall Time 30 = -V f C iss Input Capacitance 22 = 0V C oss Output Capacitance 370 V DS = -25V C rss Reverse Transfer Capacitance 89 pf ƒ = 1.0MHz C oss Output Capacitance 2220 = 0V, V DS = -1.0V, ƒ = 1.0MHz C oss Output Capacitance 170 = 0V, V DS = -120V, ƒ = 1.0MHz C oss eff. Effective Output Capacitance 340 = 0V, V DS = 0V to -120V valanche Characteristics Parameter Typ. Max. Units E S Single Pulse valanche Energyd 2 mj I R valanche Currentc -16 Diode Characteristics Parameter Min. Typ. Max. Units I S Continuous Source Current -27 (Body Diode) I SM Pulsed Source Current -1 (Body Diode)c V SD Diode Forward Voltage -1.6 V t rr Reverse Recovery Time 150 ns Q rr Reverse Recovery Charge 860 nc MOSFET symbol Conditions showing the integral reverse G S p-n junction diode. T J = 25 C, I S = -16, = 0V f T J = 25 C, I F = -16, V DD = -25V di/dt = -/µs f D 2 www.irf.com
-I D, Drain-to-Source Current (Α) R DS(on), Drain-to-Source On Resistance (Normalized) -I D, Drain-to-Source Current () -I D, Drain-to-Source Current () 0 VGS TOP -15V -V -8.0V -7.0V -6.0V -5.5V -5.0V BOTTOM -4.5V 0 VGS TOP -15V -V -8.0V -7.0V -6.0V -5.5V -5.0V BOTTOM -4.5V 1 0.1-4.5V 60µs PULSE WIDTH Tj = 25 C 0.01 0.1 1 -V DS, Drain-to-Source Voltage (V) 1-4.5V 60µs PULSE WIDTH Tj = 175 C 0.1 0.1 1 -V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics T J = 25 C T J = 175 C 2.5 2.0 I D = -27 = -V 1.5 1.0 1.0 V DS = 50V 60µs PULSE WIDTH 2 4 6 8 12 -, Gate-to-Source Voltage (V) 0.5-60 -40-20 0 20 40 60 80 120 140 160 180 T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature www.irf.com 3
-I SD, Reverse Drain Current () -I D, Drain-to-Source Current () C, Capacitance(pF) -, Gate-to-Source Voltage (V) 000 00 = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd 12.0.0 I D = -16 V DS = 120V V DS = 75V V DS = 30V 8.0 C iss 0 6.0 C oss 4.0 C rss 2.0 1 0.0 0 20 30 40 50 60 70 80 -V DS, Drain-to-Source Voltage (V) Q G Total Gate Charge (nc) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 0.00 0 OPERTION IN THIS RE LIMITED BY R DS (on).00 T J = 175 C.00 T J = 25 C 1.00 = 0V 0. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -V SD, Source-to-Drain Voltage (V) 1 Tc = 25 C Tj = 175 C Single Pulse µsec 1msec msec 1 0 -V DS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating rea 4 www.irf.com
-I D, Drain Current () 30 V DS R D 25 20 R G D.U.T. + - V DD 15 5 0 25 50 75 125 150 175 T C, Case Temperature ( C) Fig 9. Maximum Drain Current vs. mbient Temperature Pulse Width 1 µs Duty Factor 0.1 % Fig a. Switching Time Test Circuit V DS 90% % t d(on) t r t d(off) t f Fig b. Switching Time Waveforms 1 D = 0.50 Thermal Response ( Z thjc ) 0.1 0.01 0.001 0.20 0. 0.05 0.02 0.01 SINGLE PULSE ( THERML RESPONSE ) R 1 R 1 R 2 R 2 R 3 R 3 τ J τ J τ 1 τ 1 τ 2 τ 2 τ 3 τ 3 Ci= τi/ri Ci= i/ri 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t 1, Rectangular Pulse Duration (sec) Ri ( C/W) τi (sec) 0.264 0.000285 0.206 0.001867 0.140 0.013518 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-mbient τ C τ www.irf.com 5
E S, Single Pulse valanche Energy (mj) R DS (on), Drain-to-Source On Resistance (mω) R DS(on), Drain-to -Source On Resistance (mω) 400 0 350 900 800 300 250 = -V 700 600 500 I D = -27 200 400 300 150 200 0 20 40 60 80 0 4 5 6 7 8 9 11 12 -I D, Drain Current () -, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Drain Current Fig 13. On-Resistance vs. Gate Voltage 12V Current Regulator Same Type as D.U.T..2µF 50KΩ -3m.3µF I G D.U.T. I D Current Sampling Resistors - + V DS - Q G Fig 14a&b. Basic Gate Charge Test Circuit and Waveform V G Q GS Q GD Charge 900 800 700 600 500 400 I D TOP -4.6-6.3 BOTTOM -16 VDS L 300 I S R G -20V tp D.U.T IS 0.01Ω DRIVER V DD 200 0 tp V (BR)DSS 15V 25 50 75 125 150 175 Starting T J, Junction Temperature ( C) Fig 15a&b. Unclamped Inductive Test circuit Fig 15c. Maximum valanche Energy and Waveforms vs. Drain Current 6 www.irf.com
TO-220B Package Outline Dimensions are shown in millimeters (inches) 2.87 (.113) 2.62 (.3).54 (.415).29 (.405) 3.78 (.149) 3.54 (.139) - - 4.69 (.185) 4.20 (.165) - B - 1.32 (.052) 1.22 (.048) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 1 2 3 4 6.47 (.255) 6. (.240) 1.15 (.045) MIN 4.06 (.160) 3.55 (.140) LED SSIGNMENTS LED SSIGNMENTS HEXFET IGBTs, CoPCK 1 - GTE 1- GTE 2 - DRIN 1- GTE 2- DRIN 3 - SOURCE 2- COLLECTOR 3- SOURCE 4 - DRIN 3- EMITTER 4- DRIN 4- COLLECTOR 1.40 (.055) 3X 1.15 (.045) 2.54 (.) 2X 3X 0.93 (.037) 0.69 (.027) 0.36 (.014) M B M 0.55 (.022) 3X 0.46 (.018) 2.92 (.115) 2.64 (.4) NOTES: 1 DIMENSIONING & TOLERNCING PER NSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220B. 2 CONTROLLING DIMENSION : INCH 4 HETSINK & LED MESUREMENTS DO NOT INCLUDE BURRS. TO-220B Part Marking Information EXMPLE : THIS IS N IRF WITH SSEMBLY LOT CODE 9B1M INTERNTIONL RECTIFIER LOGO SSEMBLY LOT CODE IRF 9246 9B 1M PRT NUMBER DTE CODE (YYWW) YY = YER WW = WEEK Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L = 1.6mH, R G = 25Ω, I S = -17. ƒ I SD -17, di/dt -520/µs, V DD V (BR)DSS, T J 175 C. Pulse width 300µs; duty cycle 2%. R q is measured at T J of approximately 90 C. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR s Web site. IR WORLD HEDQURTERS: 233 Kansas St., El Segundo, California 90245, US Tel: (3) 252-75 TC Fax: (3) 252-7903 Visit us at www.irf.com for sales contact information.04/04 www.irf.com 7
Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/