Micropower oltage Reference Diodes The LM25/LM35 series are micropower twoterminal bandgap voltage regulator diodes. Designed to operate over a wide current range of A to 2 ma, these devices feature exceptionally low dynamic impedance, low noise and stable operation over time and temperature. Tight voltage tolerances are achieved by onchip trimming. The large dynamic operating range enables these devices to be used in applications with widely varying supplies with excellent regulation. Extremely low operating current make these devices ideal for micropower circuitry like portable instrumentation, regulators and other analog circuitry where extended battery life is required. The LM25/LM35 series are packaged in a low cost TO226 plastic case and are available in two voltage versions of and 2.5 as denoted by the device suffix (see Ordering Information table). The LM25 is specified over a 4 C to +5 C temperature range while the LM35 is rated from C to +7 C. The LM35 is also available in a surface mount plastic package in voltages of and 2.5. Features Operating Current from A to 2 ma 1.%, 1.5%, 2.% and 3.% Initial Tolerance Grades Low Temperature Coefficient 1. Dynamic Impedance Surface Mount Package Available PbFree Packages are Available Cathode Cathode Anode 1 SOIC D SUFFIX CASE 751 TO92 (TO226) Z SUFFIX CASE 29 MARKING DIAGRAMS xxx = 1.2 or 2.5 y = 2 or 3 z = 1 or 2 A = Assembly Location L = Wafer Lot Y = Year W, WW = Work Week = PbFree Package (Note: Microdot may be in either location) 1 y5z ALYW LMy5 Zxxx ALYWW 36 k Open for k (Bottom iew) 1 2 3 Anode 1 2 3 4 7 6 5 Cathode 6 k.45 k Standard Application Open for 2.5 74.3 k 425 k 6 k 1.5 Battery + 3.3 k 6 k 5 k LM351.2 Anode Figure 1. Representative Schematic Diagram ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Semiconductor Components Industries, LLC, 2 March, 2 Rev. 1 Publication Order Number: LM25/D
MAXIMUM RATINGS (T A = 25 C, unless otherwise noted) Rating Symbol alue Unit Reverse Current I R 3 ma Forward Current I F ma Operating Ambient Temperature Range LM25 LM35 T A 4 to +5 to +7 C Operating Junction Temperature T J +15 C Storage Temperature Range T stg 65 to + 15 C Electrostatic Discharge Sensitivity (ESD) Human Body Model (HBM) Machine Model (MM) Charged Device Model (CDM) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ESD 4 4 2 ELECTRICAL CHARACTERISTICS (T A = 25 C, unless otherwise noted) Characteristic Reverse Breakdown oltage (I Rmin I R 2 ma) LM251.2/LM35B1.2 LM351.2 Minimum Operating Current T A = 25 C Reverse Breakdown oltage Change with Current I Rmin I R 1. ma, T A = +25 C 1. ma I R 2 ma, T A = +25 C Symbol (BR)R 1.223 1.2 I Rmin (BR)R LM251.2 LM351.2/LM35B1.2 Min Typ Max Min Typ Max 1.235. 1.247 1.27 1.223 1.2 1.25 1.192 2 1. 1.5 2 1.235 1.235. 1.247 1.26 1.26 1.273 15 2 1. 1.5 2 25 Unit A m Reverse Dynamic Impedance I R = A, T A = +25 C Z.6.6 Average Temperature Coefficient A I R 2 ma, (BR) / T ppm/ C Wideband Noise (RMS) I R = A, Hz f khz Long Term Stability I R = A, T A = +25 C ±.1 C Reverse Breakdown oltage (I Rmin I R 2 ma) LM252.5/LM35B2.5 LM352.5 Minimum Operating Current T A = 25 C n S (BR)R 2.462 2.415 I Rmin 1. T low = 4 C for LM251.2, LM252.5 T high = +5 C for LM251.2, LM252.5 T low = C for LM351.2, LM35B1.2, LM352.5, LM35B2.5 T high = +7 C for LM351.2, LM35B1.2, LM352.5, LM35B2.5 6 6 2 2 2.5 13 2.53 2.55 2 3 2.462 2.436 2.425 2.4 2.5 2.5 13 2.53 2.564 2.575 2.6 2 3 ppm/khr A 2
ELECTRICAL CHARACTERISTICS (T A = 25 C, unless otherwise noted) Characteristic Reverse Breakdown oltage Change with Current I Rmin I R 1. ma, T A = +25 C T A = T low to T high (Note 2) 1. ma I R 2 ma, T A = +25 C T A = T low to T high (Note 2) Reverse Dynamic Impedance I R = A, T A = +25 C Average Temperature Coefficient 2 A I R 2 ma, T A = T low to T high (Note 2) Wideband Noise (RMS) I R = A, Hz f khz Long Term Stability I R = A, T A = +25 C ±.1 C Symbol (BR)R Z (BR) / T 2. T low = 4 C for LM251.2, LM252.5 T high = +5 C for LM251.2, LM252.5 T low = C for LM351.2, LM35B1.2, LM352.5, LM35B2.5 T high = +7 C for LM351.2, LM35B1.2, LM352.5, LM35B2.5 n S LM251.2 LM351.2/LM35B1.2 Min Typ Max Min Typ Max 1. 1.5 2 2. 2.5 2 25.6.6 12 12 2 2 Unit m ppm/ C ppm/khr 3
TYPICAL PERFORMANCE CURES FOR LM251.2/351.2/35B1.2, REERSE CURRENT ( A) μ IR 1..1 T A = + 5 C 4 C.2.4.6. 1. 1.2 ( BR), REERSE OLTAGE () Figure 2. Reverse Characteristics 1.4 Δ(BR)R, REERSE OLTAGE CHANGE (m). 6. 4. 2. 2..1 T A = + 5 C 4 C.1 1. I R, REERSE CURRENT (ma) Figure 3. Reverse Characteristics 1.25 F, FORWARD OLTAGE () 1.2 1...6.4.2 T A = 4 C + 5 C (BR)R, REERSE OLTAGE () 1.24 1.23 1.22 I R = A.1.1 1. I F, FORWARD CURRENT (ma) Figure 4. Forward Characteristics 1.2 5 25 25 5 75 T A, AMBIENT TEMPERATURE ( C) Figure 5. Temperature Drift 125 en, NOISE (n/ Hz) 75 75 625 5 375 25 125 1. K K f, FREQUENCY (Hz) Figure 6. Noise oltage k OUTPUT () INPUT () 1.5 1.25 1..75.5.25 5. Input k Output DUT.1.2.3.6.7..9 1. t, TIME (ms) Figure 7. Response Time 1.1 4
TYPICAL PERFORMANCE CURES FOR LM252.5/352.5/35B2.5, REERSE CURRENT ( A) μ IR 1..1 T A = + 5 C 4 C.5 1. 1.5 2. 2.5 3. ( BR), REERSE OLTAGE () 3.5 Δ(BR)R, REERSE OLTAGE CHANGE (m). 6. 4. 2. 2..1 T A = + 5 C 4 C.1 1. I R, REERSE CURRENT (ma) Figure. Reverse Characteristics Figure 9. Reverse Characteristics F, FORWARD OLTAGE () 1.2 1...6.4.2 T A = 4 C + 5 C (BR)R, REERSE OLTAGE () 2.52 2.5 2.5 2.49 2.4 2.47 2.46 I R = A.1.1 1. I F, FORWARD CURRENT (ma) Figure. Forward Characteristics 2.45 5 25 25 5 75 T A, AMBIENT TEMPERATURE ( C) Figure 11. Temperature Drift 125 en, NOISE (n/ Hz) 15 125 75 5 25 1. K K k f, FREQUENCY (Hz) Figure 12. Noise oltage OUTPUT () INPUT () 3. 2.5 2. 1.5 1..5 5. Input k Output DUT.1.2.3.6.7..9 1. t, TIME (ms) Figure 13. Response Time 1.1 5
ORDERING INFORMATION Device LM25D1.2 Operating Temperature Range Reverse BreakDown oltage Package Shipping SOIC LM25D1.2G SOIC (PbFree) LM25D1.2R2 SOIC 25 / Tape & Reel LM25D1.2R2G LM25D2.5 SOIC (PbFree) SOIC 25 / Tape & Reel LM25D2.5G SOIC (PbFree) 2.5 LM25D2.5R2 SOIC 25 / Tape & Reel LM25D2.5R2G SOIC (PbFree) 25 / Tape & Reel LM25Z1.2 TO92 LM25Z1.2G T A = 4 C to +5 C TO92 (PbFree) LM25Z2.5 TO92 LM25Z2.5G 2.5 TO92 (PbFree) LM25Z1.2RA TO92 2 / Tape & Reel LM25Z1.2RAG TO92 (PbFree) 2 / Tape & Reel LM25Z2.5RA TO92 2 / Tape & Reel LM25Z2.5RAG TO92 2 / Tape & Reel (PbFree) 2.5 LM25Z2.5RP TO92 2 Units / FanFold LM25Z2.5RPG LM35BD1.2 TO92 (PbFree) SOIC 2 Units / FanFold LM35BD1.2G SOIC (PbFree) LM35BD1.2R2 SOIC 25 / Tape & Reel LM35BD1.2R2G LM35BD2.5 SOIC (PbFree) SOIC 25 / Tape & Reel LM35BD2.5G SOIC (PbFree) LM35BD2.5R2 T A = C to +7 C 2.5 SOIC 25 / Tape & Reel LM35BD2.5R2G LM35BZ1.2 SOIC (PbFree) TO92 25 / Tape & Reel LM35BZ1.2G TO92 (PbFree) LM35BZ1.2RA TO92 2 / Tape & Reel LM35BZ1.2RAG TO92 (PbFree) 2 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD11/D. 6
ORDERING INFORMATION Reverse BreakDown Device Operating Temperature Range oltage Package Shipping LM35BZ2.5 LM35BZ2.5G TO92 (PbFree) 2.5 LM35BZ2.5RA TO92 2 / Tape & Reel LM35BZ2.5RAG LM35D1.2 T A = C to +7 C TO92 TO92 (PbFree) SOIC 2 / Tape & Reel LM35D1.2G SOIC (PbFree) LM35D1.2R2 SOIC 25 / Tape & Reel LM35D1.2R2G LM35D2.5 SOIC (PbFree) SOIC 25 / Tape & Reel LM35D2.5G SOIC (PbFree) 2.5 LM35D2.5R2 SOIC 25 / Tape & Reel LM35D2.5R2G SOIC (PbFree) 25 / Tape & Reel LM35Z1.2 LM35Z1.2G TO92 TO92 (PbFree) LM35Z1.2RA TO92 2 / Tape & Reel LM35Z1.2RAG TO92 2 / Tape & Reel (PbFree) LM35Z1.2RP TO92 2 / Ammo Box LM35Z1.2RPG TO92 (PbFree) 2 / Ammo Box LM35Z2.5 TO92 LM35Z2.5G TO92 (PbFree) 2.5 LM35Z2.5RP TO92 2 / Ammo Box LM35Z2.5RPG TO92 (PbFree) 2 / Ammo Box For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD11/D. 7
PACKAGE DIMENSIONS TO92 (TO226) CASE 2911 ISSUE AM R A N B STRAIGHT LEAD BULK PACK NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 192. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. P L SEATING INCHES MILLIMETERS PLANE K DIM MIN MAX MIN MAX A.175.25 4.45 5.2 B.17.2 4.32 5.33 C.125.165 3.1 4.19 D.16.21.47.533 X X D G.45.55 1.15 1.39 H.95.5 2.42 2.66 G J.15.2.39.5 H J K.5 12.7 C L.25 6.35 N..5 2.4 2.66 P. 2.54 SECTION XX R.115 2.93 1 N.135 3.43 R A B BENT LEAD TAPE & REEL AMMO PACK NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. P T MILLIMETERS SEATING PLANE K DIM MIN MAX A 4.45 5.2 B 4.32 5.33 C 3.1 4.19 D.4.54 G X X D G 2.4 2. J.39.5 K 12.7 J N 2.4 2.66 P 1.5 4. C R 2.93 SECTION XX 3.43 1 N
PACKAGE DIMENSIONS SOIC NB CASE 757 ISSUE AJ X B Y Z H 1 G A D 5 4 S C.25 (.) M Z Y S X S.25 (.) M SEATING PLANE Y. (.4) M N X 45 M K J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 192. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION.15 (.6) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE.127 (.5) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751 THRU 756 ARE OBSOLETE. NEW STANDARD IS 757. MILLIMETERS INCHES DIM MIN MAX MIN MAX A 4. 5..19.197 B 3. 4..15.157 C 1.35 1.75.53.69 D.33.51.13.2 G 1.27 BSC.5 BSC H..25.4. J.19.25.7. K.4 1.27.16.5 M N.25.5..2 S 5. 6.2.22.244 SOLDERING FOOTPRINT* 1.52.6 7..275 4..155.6.24 1.27.5 SCALE 6:1 mm inches *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 217 USA Phone: 336752175 or 34436 Toll Free USA/Canada Fax: 336752176 or 344367 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 22955 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 79 29 Japan Customer Focus Center Phone: 13577335 9 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative LM25/D