TIP41A / TIP41B / TIP41C NPN Epitaxial Silicon Transistor Features Medium Power Linear Switching Applications Complement to TIP42 Series Ordering Information 1 TO-220 1.Base 2.Collector 3.Emitter November 2014 Part Number Top Mark Package Packing Method TIP41A TIP41A TO-220 3L (Single Gauge) Bulk TIP41B TIP41B TO-220 3L (Single Gauge) Bulk TIP41C TIP41C TO-220 3L (Single Gauge) Bulk TIP41CTU TIP41C TO-220 3L (Single Gauge) Rail Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. alues are at T C = 25 C unless otherwise noted. Symbol Parameter alue Unit CBO Collector-Base oltage TIP41A 60 TIP41B 80 TIP41C TIP41A 60 CEO Collector-Emitter oltage TIP41B 80 TIP41C EBO Emitter-Base oltage 5 I C Collector Current (DC) 6 A I CP Collector Current (Pulse) A I B Base Current 2 A T J Junction Temperature 150 C T STG Storage Temperature Range -65 to 150 C TIP41A / TIP41B / TIP41C Rev. 1.1.0
Thermal Characteristics alues are at T C = 25 C unless otherwise noted. Symbol Parameter alue Unit Collector Dissipation (T C = 25 C) 65 P C Collector Dissipation (T A = 25 C) 2 Electrical Characteristics alues are at T C = 25 C unless otherwise noted. Symbol Parameter Conditions Min. Max. Unit TIP41A 60 Collector-Emitter Sustaining CEO (sus) oltage (1) TIP41B I C = 30 ma, I B = 0 80 TIP41C I CEO Collector Cut-Off Current TIP41B / TIP41C CE = 60, I B = 0 0.7 ma TIP41A CE = 30, I B = 0 0.7 TIP41A CE = 60, EB = 0 400 I CES Collector Cut-Off Current TIP41B CE = 80, EB = 0 400 μa TIP41C CE =, EB = 0 400 I EBO Emitter Cut-Off Current EB = 5, I C = 0 1 ma h FE DC Current Gain (1) CE = 4, I C = 0.3 A 30 CE = 4, I C = 3 A 15 75 CE (sat) Collector-Emitter Saturation oltage (1) I C = 6 A, I B = 600 ma 1.5 BE (on) Base-Emitter On oltage (1) CE = 4, I C = 6 A 2.0 f T Current Gain Bandwidth Product CE =, I C = 500 ma, f = 1 MHz W 3.0 MHz Note: 1. Pulse test: pw 300 μs, duty cycle 2%. TIP41A / TIP41B / TIP41C Rev. 1.1.0 2
Typical Performance Characteristics hfe, DC CURRENT GAIN IC[A], COLLECTOR CURRENT 0 1 1 0 00 1 IC[mA], COLLECTOR CURRENT Figure 1. DC Current Gain IC(MAX) (PULSE) IC(MAX) (DC) TIP41 CEO MAX. TIP41A CEO MAX. TIP41B CEO MAX. TIP41C CEO MAX. 0.1 1 5ms 1ms 0.5ms CE = 4 BE(sat), CE(sat)[m], SATURATION OLTAGE 00 0 BE(sat) CE(sat) IC/IB = 1 0 00 IC[mA], COLLECTOR CURRENT Figure 2. Base-Emitter Saturation oltage and Collector-Emitter Saturation oltage P C [W], POWER DISSIPATION 80 60 40 20 0 0 25 50 75 125 150 175 CE[], COLLECTOR-EMITTER OLTAGE Figure 3. Safe Operating Area T C [ o C], CASE TEMPERATURE Figure 4. Power Derating TIP41A / TIP41B / TIP41C Rev. 1.1.0 3
Physical Dimensions Figure 5. TO-220, MOLDED, 3LEAD, JEDEC ARIATION AB TIP41A / TIP41B / TIP41C Rev. 1.1.0 4
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