Applications. Symbol Parameter Ratings Units V DS Drain to Source Voltage 30 V V GS Gate to Source Volage (Note 4) ±20 V

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1 FMC8 N-Channel PowerTrench MOFET 3 V, 75 A,.3 mω Features Max r (on) =.3 mω at V = V, I = 3 A Max r (on) =.8 mω at V =.5 V, I = 5 A High performance technology for extremely low r (on) Termination is Lead-free and RoH Compliant eneral escription ecember This N-Channel MOFET is produced using Fairchild emiconductor s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance. This device is well suited for applications where ultra low r (on) is required in small spaces such as High performance VRM, POL and Oring functions. Applications C - C Buck Converters Point of Load High Efficiency Load witch and Low ide witching Oring FET FMC8 N-Channel PowerTrench MOFET Pin Pin Top Power 33 Bottom MOFET Maximum Ratings T A = 5 C unless otherwise noted ymbol Parameter Ratings Units V rain to ource Voltage 3 V V ate to ource Volage (Note ) ± V Thermal Characteristics rain Current -Continuous (Package limited) T C = 5 C 75 I -Continuous (ilicon limited) T C = 5 C 66 -Continuous T A = 5 C (Note a) 3 A -Pulsed E A ingle Pulse Avalance Energy (Note 3) 53 mj Power issipation T P C = 5 C 5 Power issipation T A = 5 C (Note a). W T J, T T Operating and torage Junction Temperature Range -55 to +5 C R θjc Thermal Resistance, Junction to Case.3 R θja Thermal Resistance, Junction to Ambient (Note a) 53 Package Marking and Ordering Information C/W evice Marking evice Package Reel ize Tape Width Quantity FMC8 FMC8 Power 33 3 mm 3 units FMC8 Rev.C

2 Electrical Characteristics T J = 5 C unless otherwise noted ymbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV rain to ource Breakdown Voltage I = ma, V = V 3 V ΔBV Breakdown Voltage Temperature ΔT J Coefficient I = ma, referenced to 5 C 5 mv/ C I Zero ate Voltage rain Current V = V, V = V μa I ate to ource Leakage Current V = V, V = V na On Characteristics V (th) ate to ource Threshold Voltage V = V, I = ma..5.5 V ΔV (th) ΔT J ate to ource Threshold Voltage Temperature Coefficient ynamic Characteristics I = ma, referenced to 5 C -5 mv/ C V = V, I = 3 A.9.3 r (on) tatic rain to ource On Resistance V =.5 V, I = 5 A.3.8 mω V = V, I = 3A, T J = 5 C.3 g F Forward Transconductance V = 5 V, I = 3 A 88 C iss Input Capacitance pf V = 5 V, V = V, C oss Output Capacitance 57 9 pf f = MHz C rss Reverse Transfer Capacitance 67 5 pf R g ate Resistance..5.5 Ω FMC8 N-Channel PowerTrench MOFET witching Characteristics t d(on) Turn-On elay Time 5 7 ns t r Rise Time V = 5 V, I = 3 A, ns t d(off) Turn-Off elay Time V = V, R EN = 6 Ω 6 ns t f Fall Time 5.3 ns Q g Total ate Charge V = V to V 67 9 nc Q g Total ate Charge V = V to.5 V V = 5 V, 3 5 nc Q gs ate to ource Charge I = 3 A nc Q gd ate to rain Miller Charge 9.5 nc rain-ource iode Characteristics V V ource to rain iode Forward Voltage = V, I = A (Note ).6. V V = V, I = 3 A (Note ).7. t rr Reverse Recovery Time 9 78 ns I F = 3 A, di/dt = A/μs Q rr Reverse Recovery Charge 9 6 nc Notes:. R θja is determined with the device mounted on a in pad oz copper pad on a.5 x.5 in. board of FR- material. R θjc is guaranteed by design while R θca is determined by the user's board design. a. 53 C/W when mounted on a in pad of oz copper. b. 5 C/W when mounted on a minimum pad of oz copper. F F F F. Pulse Test: Pulse Width < 3 μs, uty cycle <. %. 3. E A of 53 mj is based on starting T J = 5 C, L =.3 mh, I A = 3 A, V = 7 V, V = V. % test at L =. mh, I A = 7 A.. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied. FMC8 Rev.C

3 Typical Characteristics T J = 5 C unless otherwise noted I, RAIN CURRENT (A) NORMALIZE RAIN TO OURCE ON-REITANCE 8 V = 3 V PULE URATION = 8 μs UTY CYCLE =.5% MAX....6 V, RAIN TO OURCE VOLTAE (V) Figure. I = 3 A V = V V = V V =.5 V V = V V = 3.5 V NORMALIZE RAIN TO OURCE ON-REITANCE 8 I, RAIN CURRENT (A) On Region Characteristics Figure. Normalized On-Resistance vs rain Current and ate Voltage T J, JUNCTION TEMPERATURE ( o C) r(on), RAIN TO OURCE ON-REITANCE (mω) V = 3 V T J = 5 o C T J = 5 o C PULE URATION = 8 μs UTY CYCLE =.5% MAX V = 3.5 V V =.5 V I = 3 A V = V V = V PULE URATION = 8 μs UTY CYCLE =.5% MAX 6 8 V, ATE TO OURCE VOLTAE (V) FMC8 N-Channel PowerTrench MOFET Figure 3. Normalized On Resistance vs Junction Temperature Figure. On-Resistance vs ate to ource Voltage I, RAIN CURRENT (A) 8 PULE URATION = 8 μs UTY CYCLE =.5% MAX V = 5 V T J = 5 o C T J = 5 o C T J = -55 o C V, ATE TO OURCE VOLTAE (V) I, REVERE RAIN CURRENT (A).. V = V T J = 5 o C T J = 5 o C T J = -55 o C V, BOY IOE FORWAR VOLTAE (V) Figure 5. Transfer Characteristics Figure 6. ource to rain iode Forward Voltage vs ource Current FMC8 Rev.C 3

4 Typical Characteristics T J = 5 C unless otherwise noted V, ATE TO OURCE VOLTAE (V) 8 6 I = 3 A 6 8 Q g, ATE CHARE (nc) Figure 7. V = V V = 8 V V = 5 V. 3 V, RAIN TO OURCE VOLTAE (V) ate Charge Characteristics Figure 8. Capacitance vs rain to ource Voltage CAPACITANCE (pf) f = MHz V = V C iss C oss C rss R θjc =.3 o C/W FMC8 N-Channel PowerTrench MOFET IA, AVALANCHE CURRENT (A) T J = 5 o C T J = 5 o C T J = o C I, RAIN CURRENT (A) 5 5 V =.5 V Limited by Package V = V... 5 t AV, TIME IN AVALANCHE (ms) T C, CAE TEMPERATURE ( o C) Figure 9. Unclamped Inductive witching Capability Figure. Maximum Continuous rain Current vs Case Temperature I, RAIN CURRENT (A) μs ms THI AREA I ms LIMITE BY r (on) ms INLE PULE. T J = MAX RATE s R θja = 5 o C/W s T A = 5 o C C... V, RAIN to OURCE VOLTAE (V) P(PK), PEAK TRANIENT POWER (W) 3 INLE PULE R θja = 5 o C/W T A = 5 o C t, PULE WITH (sec) Figure. Forward Bias afe Operating Area Figure. ingle Pulse Maximum Power issipation FMC8 Rev.C

5 Typical Characteristics T J = 5 C unless otherwise noted NORMALIZE THERMAL IMPEANCE, Z θja... UTY CYCLE-ECENIN ORER = t, RECTANULAR PULE URATION (sec) Figure 3. INLE PULE R θja = 5 o C/W P M t t NOTE: UTY FACTOR: = t /t PEAK T J = P M x Z θja x R θja + T A Junction-to-Ambient Transient Thermal Response Curve FMC8 N-Channel PowerTrench MOFET FMC8 Rev.C 5

6 imensional Outline and Pad Layout FMC8 N-Channel PowerTrench MOFET Package drawings are provided as a service to customers considering Fairchild components. rawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild emiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild emiconductor s online packaging area for the most recent package drawings: FMC8 Rev.C 6

7 TRAEMARK The following includes registered and unregistered trademarks and service marks, owned by Fairchild emiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower Awinda AX-CAP * BitiC Build it Now CorePLU CorePOWER CROVOLT CTL Current Transfer Logic EUXPEE ual Cool EcoPARK EfficentMax EBC Fairchild Fairchild emiconductor FACT Quiet eries FACT FAT FastvCore FETBench FP F-PF FRFET lobal Power Resource M reenbridge reen FP reen FP e-eries max TO IntelliMAX IOPLANAR Marking mall peakers ound Louder and Better MegaBuck MICROCOUPLER MicroFET MicroPak MicroPak Millerrive MotionMax Motionrid MTi MTx MVN mwaver OptoHiT OPTOLOIC OPTOPLANAR tm PowerTrench PowerX Programmable Active roop QFET Q Quiet eries RapidConfigure aving our world, mw/w/kw at a time ignalwise martmax MART TART olutions for Your uccess PM TEALTH uperfet uperot -3 uperot -6 uperot -8 upremo yncfet ync-lock * TinyBoost TinyBuck TinyCalc TinyLogic TINYOPTO TinyPower TinyPWM TinyWire TraniC TriFault etect TRUECURRENT * μeres UHC Ultra FRFET UniFET VCX VisualMax VoltagePlus X Xsens 仙 童 FMC8 N-Channel PowerTrench MOFET *Trademarks of ystem eneral Corporation, used under license by Fairchild emiconductor. 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Obsolete FMC8 Rev.C Not In Production atasheet contains specifications on a product that is discontinued by Fairchild emiconductor. The datasheet is for reference information only. 7 Rev. I7