INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features Low V CE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 C 5 μs short circuit SOA Square RBSOA 1% of the parts tested for I LM Positive V CE (ON) Temperature co-efficient Ultra-low V F Hyperfast Diode Tight parameter distribution Lead Free Package Benefits Device optimized for induction heating and soft switching applications High Efficiency due to Low V CE(on), Low Switching Losses and Ultra-low V F Rugged transient Performance for increased reliability Excellent Current sharing in parallel operation Low EMI Absolute Maximum Ratings G IRGP468DPbF IRGP468D-EPbF 1 www.irf.com 7/27/9 C E n-channel C G C E TO-247AC IRGP468DPbF V CES = 6V I C = 48A, T C = 1 C t SC 5μs, T J(max) = 175 C V CE(on) typ. = 1.65V G C E TO-247AD IRGP468D-EPbF G C E Gate Collector Emitter C PD - 9725C Parameter Max. Units V CES Collector-to-Emitter Voltage 6 V I C @ T C = 25 C Continuous Collector Current 96 I C @ T C = 1 C Continuous Collector Current 48 I CM Pulse Collector Current, V GE = 15V 144 I LM Clamped Inductive Load Current, V GE = 2V c 192 A I F @ T C = 16 C Diode Continous Forward Current g 8. I FSM Diode Non Repetitive Peak Surge Current @ T J = 25 C dg 175 I FRM @Tc = 1 C Diode Repetitive Peak Forward Current at tp=1μs df 1 V GE Continuous Gate-to-Emitter Voltage ±2 V Transient Gate-to-Emitter Voltage ±3 P D @ T C = 25 C Maximum Power Dissipation 33 W P D @ T C = 1 C Maximum Power Dissipation 17 T J Operating Junction and -55 to +175 T STG Storage Temperature Range C Soldering Temperature, for 1 sec. 3 (.63 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 1 lbf in (1.1 N m) Thermal Resistance Parameter Min. Typ. Max. Units R θjc (IGBT) Thermal Resistance Junction-to-Case-(each IGBT).45 C/W R θjc (Diode) Thermal Resistance Junction-to-Case-(each Diode) 2. R θcs Thermal Resistance, Case-to-Sink (flat, greased surface).24 R θja Thermal Resistance, Junction-to-Ambient (typical socket mount) 4
IRGP468DPbF/IRGP468D-EPbF Electrical Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Ref.Fig V (BR)CES Collector-to-Emitter Breakdown Voltage 6 V V GE = V, I C = 1μA e CT6 ΔV (BR)CES /ΔT J Temperature Coeff. of Breakdown Voltage.3 V/ C V GE = V, I C = 1mA (25 C-175 C) CT6 1.65 2.14 I C = 48A, V GE = 15V, T J = 25 C 4,5,6 V CE(on) Collector-to-Emitter Saturation Voltage 2. V I C = 48A, V GE = 15V, T J = 15 C 8,9,1 2.5 I C = 48A, V GE = 15V, T J = 175 C V GE(th) Gate Threshold Voltage 4. 6.5 V V CE = V GE, I C = 1.4mA 8,9,1,11,2 gfe Forward Transconductance 32 S V CE = 5V, I C = 48A, PW = 8μs I CES Collector-to-Emitter Leakage Current 1. 15 μa V GE = V, V CE = 6V 45 1 V GE = V, V CE = 6V, T J = 175 C V FM Diode Forward Voltage Drop.96 1.5 V I F = 8.A 7.81.86 I F = 8.A, T J = 15 C I GES Gate-to-Emitter Leakage Current ±1 na V GE = ±2V Switching Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Ref.Fig Q g Total Gate Charge (turn-on) 95 14 I C = 48A 18 Q ge Gate-to-Emitter Charge (turn-on) 28 42 nc V GE = 15V CT1 Q gc Gate-to-Collector Charge (turn-on) 35 53 V CC = 4V I C = 48A, V CC = 4V, V GE = 15V E off Turn-Off Switching Loss 1275 1481 μj R G = 1Ω, L = 2μH,T J = 25 C CT4 Energy losses include tail t d(off) Turn-Off delay time 145 176 ns I C = 48A, V CC = 4V, V GE = 15V t f Fall time 35 46 R G = 1Ω, L = 2μH,T J = 25 C I C = 48A, V CC = 4V, V GE = 15V E off Turn-Off Switching Loss 1585 μj R G = 1Ω, L = 2μH,T J = 175 C CT4 Energy losses include tail t d(off) Turn-Off delay time 165 ns I C = 48A, V CC = 4V, V GE = 15V WF1 t f Fall time 45 R G =1Ω, L=2μH, T J = 175 C C ies Input Capacitance 325 V GE = V 17 C oes Output Capacitance 245 pf V CC = 3V C res Reverse Transfer Capacitance 9 f = 1.Mhz T J = 175 C, I C = 192A 3 RBSOA Reverse Bias Safe Operating Area FULL SQUARE V CC = 48V, Vp =6V CT2 Rg = 1Ω, V GE = +2V to V SCSOA Short Circuit Safe Operating Area 5 μs V CC = 4V, Vp =6V 16, CT3 Rg = 1Ω, V GE = +15V to V WF2 Notes: V CC = 8% (V CES ), V GE = 2V, L = 2μH, R G = 1Ω. Pulse width limited by max. junction temperature. ƒ Refer to AN-186 for guidelines for measuring V (BR)CES safely. fsw = 2KHz, refer to figure 19. Sinusoidal half wave, t=1ms. 2 www.irf.com
I CE (A) I CE (A) I C (A) I CE (A) I C (A) P tot (W) 1 9 8 7 6 5 4 3 2 1 IRGP468DPbF/IRGP468D-EPbF 1 5 25 5 75 1 125 15 175 2 25 5 75 1 125 15 175 2 T C ( C) T C ( C) 35 3 25 2 15 Fig. 1 - Maximum DC Collector Current vs. Case Temperature 1 1 1 Fig. 2 - Power Dissipation vs. Case Temperature 2 18 16 14 12 1 8 6 4 2 V GE = 18V VGE = 15V VGE = 12V VGE = 1V VGE = 8.V 1 1 1 1 Fig. 3 - Reverse Bias SOA T J = 175 C; V GE = 2V 2 4 6 8 1 Fig. 4 - Typ. IGBT Output Characteristics T J = -4 C; tp = 8μs 2 2 18 16 14 12 1 V GE = 18V VGE = 15V VGE = 12V VGE = 1V VGE = 8.V 18 16 14 12 1 V GE = 18V VGE = 15V VGE = 12V VGE = 1V VGE = 8.V 8 8 6 6 4 4 2 2 2 4 6 8 1 2 4 6 8 1 Fig. 5 - Typ. IGBT Output Characteristics T J = 25 C; tp = 8μs Fig. 6 - Typ. IGBT Output Characteristics T J = 175 C; tp = 8μs www.irf.com 3
I CE (A) Energy (μj) IRGP468DPbF/IRGP468D-EPbF 2 18 16 14 12 1 8 6 4 2 I CE = 24A I CE = 48A I CE = 96A 5 1 15 2 V GE (V) Fig. 7 - Typ. Diode Forward Voltage Drop Characteristics Fig. 8 - Typical V CE vs. V GE T J = -4 C 2 2 18 18 16 16 14 14 12 1 8 I CE = 24A I CE = 48A I CE = 96A 12 1 8 I CE = 24A I CE = 48A I CE = 96A 6 6 4 4 2 2 5 1 15 2 5 1 15 2 V GE (V) V GE (V) Fig. 9 - Typical V CE vs. V GE T J = 25 C Fig. 1 - Typical V CE vs. V GE T J = 175 C 2 6 18 16 T J = 25 C T J = 175 C 5 14 12 4 E OFF 1 8 6 4 2 5 1 15 V GE (V) Fig. 11 - Typ. Transfer Characteristics V CE = 5V; tp = 1μs 3 2 1 25 5 75 1 I C (A) Fig. 12 - Typ. Energy Loss vs. I C T J = 175 C; L = 2μH; V CE = 4V, R G = 1Ω; V GE = 15V 4 www.irf.com
Capacitance (pf) V GE, Gate-to-Emitter Voltage (V) Swiching Time (ns) Time (μs) Swiching Time (ns) Energy (μj) 1 IRGP468DPbF/IRGP468D-EPbF 5 45 4 E OFF td OFF 35 1 3 t F 25 2 15 1 2 4 6 8 1 I C (A) Fig. 13 - Typ. Switching Time vs. I C T J = 175 C; L = 2μH; V CE = 4V, R G = 1Ω; V GE = 15V 1 1 25 5 75 1 125 Rg (Ω) Fig. 14 - Typ. Energy Loss vs. R G T J = 175 C; L = 2μH; V CE = 4V, I CE = 48A; V GE = 15V 18 4 td OFF 16 14 T sc I sc 35 3 1 t F 12 1 25 2 Current (A) 8 15 6 1 1 25 5 75 1 125 R G (Ω) Fig. 15 - Typ. Switching Time vs. R G T J = 175 C; L = 2μH; V CE = 4V, I CE = 48A; V GE = 15V 1 4 16 8 1 12 14 16 18 V GE (V) Fig. 16 - V GE vs. Short Circuit V CC = 4V; T C = 25 C 5 Cies 14 12 V CES = 3V V CES = 4V 1 1 1 Coes 8 6 Cres 4 2 1 2 4 6 8 1 25 5 75 1 Q G, Total Gate Charge (nc) Fig. 17 - Typ. Capacitance vs. V CE V GE = V; f = 1MHz Fig. 18 - Typical Gate Charge vs. V GE I CE = 48A; L = 6μH www.irf.com 5
V GE(th), Repetitive Peak Current (A) Gate Threshold Voltage (Normalized) IRGP468DPbF/IRGP468D-EPbF 16 14 12 D=.1 1..9 I C = 1.4mA 1 D=.2.8 8 D=.5.7 6 4 2 t Square Pulse, f = 2KHz D = t/t.6.5 T = 5us 25 5 75 1 125 15 175 Case Temperature ( C) Fig 19. Maximum Diode Repetitive Forward Peak Current vs. Case Temperature.4 25 5 75 1 125 15 175 T J, Temperature ( C) Fig 2. Typical Gate Threshold Voltage (Normalized) vs. Junction Temperature 1 Thermal Response ( Z thjc ) C/W.1.1 D =.5.2.1.5.2.1 SINGLE PULSE ( THERMAL RESPONSE ) R 1 R 1 R 2 R 2 R 3 R 3 τ J τ J τ 1 τ 1 τ 2 τ 2 τ 3 τ 3 Ci= τi/ri Ci i/ri R 4 Ri ( C/W) τi (sec) R 4.248.14 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc.1 1E-6 1E-5.1.1.1.1 1 t 1, Rectangular Pulse Duration (sec) 1 Fig 21. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) τ 4 τ 4 τ C τ.652.5.1537.141.265.13663 Thermal Response ( Z thjc ) C/W 1.1.1 D =.5.2.1.5.2.1 R 1 R 1 R 2 R 2 R 3 R 3 τ J τ J τ 1 τ 1 τ 2 τ 2 τ 3 τ 3 R 4 Ri ( C/W) τi (sec) R 4.4.3 Ci= τi/ri.3766.3659 Ci i/ri SINGLE PULSE.1 ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc.1 1E-6 1E-5.1.1.1.1 1 t 1, Rectangular Pulse Duration (sec) Fig. 22. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) τ 4 τ 4 τ C τ.7532.717.8317.486 6 www.irf.com
IRGP468DPbF/IRGP468D-EPbF L 1K L VC C 8 V Rg 48V Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit DIODE CLAMP / L 4x DC 36V - 5V Rg / DRIVER VCC Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit R = VCC ICM C force 4μH D1 1K C sense Rg VCC G force.75μ E sense E force Fig.C.T.5 - Resistive Load Circuit Fig.C.T.6 - BVCES Filter Circuit www.irf.com 7
IRGP468DPbF/IRGP468D-EPbF 7 14 6 6 6 12 5 5 5 1 4 V CE I CE 4 VCE (V) 4 3 2 1-1 tf 9% I CE 5% V CE 5% I CE E OFF Loss -.4.1.6 1.1 Time(µs) 8 6 4 2-2 Fig. WF1 - Typ. Turn-off Loss Waveform @ T J = 175 C using Fig. CT.4 VCE (V) 3 2 1-1 -5.. 5. 1. time (µs) Fig. WF2 - Typ. S.C. Waveform @ T J = 25 C using Fig. CT.3 3 2 1-1 ICE (A) 8 www.irf.com
IRGP468DPbF/IRGP468D-EPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information (;$3/( 7+,6,6$1,5)3( :,7+$66(%/< /27&2'( $66(%/('21::,17+($66(%/</,1(+ 1RWH3LQDVVHPEO\OLQHSRVLWLRQ LQGLFDWHV/HDG)UHH,17(51$7,21$/ 5(&7,),(5 /2*2 $66(%/< /27&2'(,5)3( + 3$5718%(5 '$7(&2'( <($5 :((. /,1(+ TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 9
IRGP468DPbF/IRGP468D-EPbF TO-247AD Package Outline Dimensions are shown in millimeters (inches) TO-247AD Part Marking Information (;$3/( 7+,6,6$1,5*3%.'( :,7+$66(%/< /27&2'( $66(%/('21::,17+($66(%/</,1(+ 1RWH3LQDVVHPEO\OLQHSRVLWLRQ LQGLFDWHV/HDG)UHH,17(51$7,21$/ 5(&7,),(5 /2*2 Ã+ ÃÃÃÃÃÃÃÃÃÃÃ 3$5718%(5 '$7(&2'( $66(%/< <($5 /27&2'( :((. /,1(+ TO-247AD package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 9245, USA Tel: (31) 252-715 TAC Fax: (31) 252-793 Visit us at www.irf.com for sales contact information. 7/9 1 www.irf.com