F883NZ N-Channel PowerTrench MOFET 3V, 8.5A, 4.5mΩ Features Max r (on) = 4.5mΩ at V G = V, I = 8.5A Max r (on) = 6.mΩ at V G = 4.5V, I =6A HBM E protection level of 5.6KV typical (note 3) High performance trench technology for extremely low r (on) High power and current handling capability RoH compliant General escription May 23 This N-Channel MOFET is produced using Fairchild emiconductor s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. F883NZ N-Channel PowerTrench MOFET G O-8 Pin G MOFET Maximum Ratings T A = 25 C unless otherwise noted ymbol Parameter Ratings Units V rain to ource Voltage 3 V V G Gate to ource Voltage ±2 V rain Current -Continuous (Note a) 8.5 I -Pulsed 74 A E A ingle Pulse Avalanche Energy (Note 4) 337 mj Power issipation (Note a) 2.5 P Power issipation (Note b). W T J, T TG Operating and torage Junction Temperature Range -55 to +5 C Thermal Characteristics R θjc Thermal Resistance, Junction to Case (Note ) 25 R θja Thermal Resistance, Junction to Ambient (Note a) 5 R θja Thermal Resistance, Junction to Ambient (Note b) 25 Package Marking and Ordering Information C/W evice Marking evice Reel ize Tape Width Quantity F883NZ F883NZ 3 2mm 25 units 28 Fairchild emiconductor Corporation F883NZ Rev.C2
Electrical Characteristics T J = 25 C unless otherwise noted ymbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV rain to ource Breakdown Voltage I = 25μA, V G = V 3 V ΔBV Breakdown Voltage Temperature ΔT J Coefficient I = 25μA, referenced to 25 C 2 mv/ C I Zero Gate Voltage rain Current V = 24V, V G = V μa I G Gate to ource Leakage Current V G = ±2V, V = V ± μa On Characteristics (Note 2) V G(th) Gate to ource Threshold Voltage V G = V, I = 25μA.8 3 V ΔV G(th) ΔT J Gate to ource Threshold Voltage Temperature Coefficient I = 25μA, referenced to 25 C -6 mv/ C V G = V, I = 8.5A 3.8 4.5 V r (on) tatic rain to ource On Resistance G = 4.5V, I = 6A 4.7 6. mω V G = V, I = 8.5A, 5. 6.6 T J = 25 C g F Forward Transconductance V = 5V, I = 8.5A 74 ynamic Characteristics C iss Input Capacitance 35 445 pf V = 5V, V G = V, C oss Output Capacitance 58 775 pf f = MHz C rss Reverse Transfer Capacitance 345 52 pf R g Gate Resistance f = MHz..8 5.6 Ω F883NZ N-Channel PowerTrench MOFET witching Characteristics t d(on) Turn-On elay Time 3 24 ns t V = 5V, I = 8.5A r Rise Time 8 6 ns V G = V, R GEN = 6Ω t d(off) Turn-Off elay Time 39 63 ns t f Fall Time 7 4 ns Q g Total Gate Charge V G = V to V V = 5V 55 76 nc Q g Total Gate Charge V G = V to 5V I = 8.5A 28 4 nc Q gs Gate to ource Gate Charge 9 nc Q gd Gate to rain Miller Charge nc rain-ource iode Characteristics V ource to rain iode Forward Voltage V G = V, I = 2.A (Note 2).7.2 V t rr Reverse Recovery Time 32 47 ns I F = 8.5A, di/dt = A/μs Q rr Reverse Recovery Charge 27 4 nc Notes. R θja is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θja is determined by the user s board design. a) 5 C/W when mounted on a in 2 pad of 2 oz copper b) 25 C/W when mounted on a minimum pad. 2. Pulse Test: Pulse Width < 3 us, uty Cycle < 2%. 3. The diode connected between the gate and source serves only as protection against E. No gate overvoltage rating is implied. 4. tarting T J = 25 C, L = 3mH, I A = 5A, V = 3V, V G = V. F883NZ Rev.C2 2
Typical Characteristics T J = 25 C unless otherwise noted I, RAIN CURRENT (A) NORMALIZE RAIN TO OURCE ON-REITANCE 75 6 45 3 V G =.V V G = 4.5V V G = 4.V V G = 3.5V V G = 3.V 5 PULE URATION = 8μs UTY CYCLE =.5%MAX..5..5 2. 2.5 3..8.6.4.2..8. V G =.V.5 5 3 45 6 75 V, RAIN TO OURCE VOLTAGE (V) I, RAIN CURRENT(A) Figure. On-Region Characteristics Figure 2. Normalized On-Resistance vs rain Current and Gate Voltage PULE URATION = 8μs UTY CYCLE =.5%MAX I =8.5A V G = V.6-5 -25 25 5 75 25 5 T J, JUNCTION TEMPERATURE ( o C) NORMALIZE RAIN TO OURCE ON-REITANCE r(on), RAIN TO OURCE ON-REITANCE (mω) 4. 3.5 3. 2.5 2..5 9 8 7 6 5 4 V G = 3.V I =9.5A PULE URATION = 8μs UTY CYCLE =.5%MAX V G = 3.5V V G = 4V V G = 4.5V PULE URATION = 8μs UTY CYCLE =.5%MAX 3 2 4 6 8 V G, GATE TO OURCE VOLTAGE (V) F883NZ N-Channel PowerTrench MOFET Figure 3. Normalized On- Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to ource Voltage I, RAIN CURRENT (A) 75 6 45 3 5 PULE URATION = 8μs UTY CYCLE =.5%MAX T J = 5 o C T J = -55 o C.5 2. 2.5 3. 3.5 4. V G, GATE TO OURCE VOLTAGE (V) Figure 5. Transfer Characteristics I, REVERE RAIN CURRENT (A).. V G = V T J = 5 o C T J = -55 o C E-3..2.4.6.8..2 V, BOY IOE FORWAR VOLTAGE (V) Figure 6. ource to rain iode Forward Voltage vs ource Current F883NZ Rev.C2 3
Typical Characteristics T J = 25 C unless otherwise noted VG, GATE TO OURCE VOLTAGE(V) IA, AVALANCHE CURRENT(A) 8 6 4 2 I = 8.5A 2 3 4 5 6 Q g, GATE CHARGE(nC) Figure 7. 3 V = V V =2V V = 5V. V, RAIN TO OURCE VOLTAGE (V) Gate Charge Characteristics Figure 8. Capacitance vs rain to ource Voltage.. t AV, TIME IN AVALANCHE(ms) Figure 9. Unclamped Inductive witching Capability CAPACITANCE (pf) Ig, GATE LEAKAGE CURRENT(A) -4-5 -6-7 -8 Figure. f = MHz V G = V -3 VG = V Ciss Coss C rss T J = 5 o C -9 5 5 2 25 3 V G, GATE TO OURCE VOLTAGE(V) Gate Leakage Current vs Gate to ource Voltage 5 F883NZ N-Channel PowerTrench MOFET I, RAIN CURRENT (A) 2 5 5 R θja = 5 o C/W V G = V V G = 4.5V 25 5 75 25 5 T A, AMBIENT TEMPERATURE ( o C) Figure. Maximum Continuous rain Current vs Ambient Temperature I, RAIN CURRENT (A) 2 ms THI AREA I LIMITE BY r (on) ms INGLE PULE s. T J = MAX RATE s R θja = 25 o C/W C T A = 25 o C... 2 V, RAIN to OURCE VOLTAGE (V) Figure 2. Forward Bias afe Operating Area μs ms F883NZ Rev.C2 4
Typical Characteristics T J = 25 C unless otherwise noted ), PEAK TRANIENT POWER (W) P(PK NORMALIZE THERMAL IMPEANCE, Z θja 2 V G = V INGLE PULE R θja = 25 o C/W T A = 25 o C Figure 3. ingle Pulse Maximum Power issipation FOR TEMPERATURE ABOVE 25 o C ERATE PEAK CURRENT A FOLLOW: 5 T A I = I 25 ----------------------- 25 T A = 25 o C.5-4 -3-2 - t, PULE WITH (sec) 2... UTY CYCLE-ECENING ORER =.5.2..5.2. INGLE PULE R θja = 25 o C/W.5-4 -3-2 - t, RECTANGULAR PULE URATION (sec) Figure 4. Junction-to-Ambient Transient Thermal Response Curve P M t t 2 NOTE: UTY FACTOR: = t /t 2 PEAK T J = P M x Z θja x R θja + T A F883NZ N-Channel PowerTrench MOFET F883NZ Rev.C2 5
TRAEMARK The following includes registered and unregistered trademarks and service marks, owned by Fairchild emiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2Cool AccuPower AX-CAP * BitiC Build it Now CorePLU CorePOWER CROVOLT CTL Current Transfer Logic EUXPEE ual Cool EcoPARK EfficentMax EBC Fairchild Fairchild emiconductor FACT Quiet eries FACT FAT FastvCore FETBench FP F-PF FRFET Global Power Resource M Green Bridge Green FP Green FP e-eries Gmax GTO IntelliMAX IOPLANAR Marking mall peakers ound Louder and Better MegaBuck MICROCOUPLER MicroFET MicroPak MicroPak2 Millerrive MotionMax mwaver OptoHiT OPTOLOGIC OPTOPLANAR tm PowerTrench PowerX Programmable Active roop QFET Q Quiet eries RapidConfigure aving our world, mw/w/kw at a time ignalwise martmax MART TART olutions for Your uccess PM TEALTH uperfet uperot -3 uperot -6 uperot -8 upremo yncfet ync-lock * TinyBoost TinyBuck TinyCalc TinyLogic TINYOPTO TinyPower TinyPWM TinyWire TraniC TriFault etect TRUECURRENT * μeres UHC Ultra FRFET UniFET VCX VisualMax VoltagePlus X F883NZ N-Channel PowerTrench MOFET *Trademarks of ystem General Corporation, used under license by Fairchild emiconductor. ICLAIMER FAIRCHIL EMICONUCTOR REERVE THE RIGHT TO MAKE CHANGE WITHOUT FURTHER NOTICE TO ANY PROUCT HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR EIGN. FAIRCHIL OE NOT AUME ANY LIABILITY ARIING OUT OF THE APPLICATION OR UE OF ANY PROUCT OR CIRCUIT ECRIBE HEREIN; NEITHER OE IT CONVEY ANY LICENE UNER IT PATENT RIGHT, NOR THE RIGHT OF OTHER. THEE PECIFICATION O NOT EXPAN THE TERM OF FAIRCHIL WORLWIE TERM AN CONITION, PECIFICALLY THE WARRANTY THEREIN, WHICH COVER THEE PROUCT. LIFE UPPORT POLICY FAIRCHIL PROUCT ARE NOT AUTHORIZE FOR UE A CRITICAL COMPONENT IN LIFE UPPORT EVICE OR YTEM WITHOUT THE EXPRE WRITTEN APPROVAL OF FAIRCHIL EMICONUCTOR CORPORATION. As used here in:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. PROUCT TATU EFINITION efinition of Terms atasheet Identification Product tatus efinition Advance Information Formative / In esign 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild emiconductor Corporation s Anti-Counterfeiting Policy. Fairchild s Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under ales upport. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild istributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild istributors are genuine parts, have full traceability, meet Fairchild s quality standards for handing and storage and provide access to Fairchild s full range of up-to-date technical and product information. Fairchild and our Authorized istributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized ources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. atasheet contains the design specifications for product development. pecifications may change in any manner without notice. Preliminary No Identification Needed First Production Full Production atasheet contains preliminary data; supplementary data will be published at a later date. Fairchild emiconductor reserves the right to make changes at any time without notice to improve design. atasheet contains final specifications. Fairchild emiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production atasheet contains specifications on a product that is discontinued by Fairchild emiconductor. The datasheet is for reference information only. Rev. I64 F883NZ Rev. C2 6