Silicon photonics: low cost and high performance. L. Pavesi

Transcription

1 Silicon photonics: a new technology platform to enable low cost and high performance photonics

2 Outline Silicon Photonics State of the art Silicon Photonics for lab-on-a-chip NanoSilicon photonics Conclusion

3 Outline Silicon Photonics State of the art Silicon Photonics for lab-on-a-chip NanoSilicon photonics Conclusion

4

5 Objective: reduce the cost per single transistor

6 29 January 1969

7

8

9 vs. Silicon Photonics Silicon Photonics LD,PD, microrings,. Silicon CMOS

10 Silicon photonics Photonic devices produced within standard silicon factory and with standard silicon processing

11 Silicon pro s and cons Transparent on μm CMOS compatibility Low cost High index contrast, small footprint No electro-optic effect No detection in μm region High index contrast coupling Lacks efficient light emission

12 The Opportunity of Silicon Photonics Enormous ($ billions) CMOS infrastructure, process learning, and capacity Draft continued investment in Moore s law Potential to integrate multiple optical devices Micromachining could provide smart packaging Potential to converge computing & communications To obenefit e from this soptca optical wafers ae must run alongside existing product. CMOS PHOTONICS

13 Cost = paradigm change 200 mm Si wafer has 125, mm sized dies Cost processed CMOS wafers $2,000,000 Cost per die: $16 Laser size: 10x100 microns. Cost per laser: $ This is just like estimating the cost of transistors. They are free. Only the PIC cost matters. Emphasis is moved from components to the system

14 Silicon photonics Basic building blocks

15

16

17

18

19

20 Modulator Because of its crystal structure, silicon is not a useful conventional electro-optic material Because of its indirect bandgap, silicon has no near bandgap nonlinearities Thermo-optical effect is strong but slow The only effect that is left is the free carrier or Drude effect Δn = [ x10 ΔN x10 ( ΔP) ] [ x 10 Δ N x 10 ( Δ P ) ] Δα = x x R.A. Soref and B.R. Bennett, IEEE JQE 23, 123 (1987)

21

22

23

24 Photodetection Silicon does not absorb IR well Ge Use hybrid approach Use SiGe or strained Ge Use damaged silicon Si

25

26 Ge photodector IEF-LETI

27

28 III-V heterogeneous integration for the laser source

29 III-V heterointegration for the laser source

30

31

32

33

34

35 Where should we integrate the photonics layer?

36 Options 1

37 Options 1

38

39

40

41 This requires Spotsize conversion structures Lateral coupling Vertical coupling fiber φ air g r d e h x y z typically based on inverted tapers typically based on gratings spotsize: ti ~3 µm spotsize: ti ~ 10 µm

42

43 Outline Silicon Photonics State of the art Silicon Photonics for lab-on-a-chip NanoSilicon photonics Conclusion

44 Explosion of silicon photonics

45 From Building Block Research

46 To Large scale integration Optical Fiber Multiplexor 25 modulators at 40Gb/s 25 hybrid lasers A future integrated 1 Tb/s optical link on a single silicon chip 46

47

48

49 Silicon Photonic Link 50Gbps Multichip approach Driver 45 nm CMOS Photonic 90 nm CMOS

50 Outline Silicon Photonics State of the art Silicon Photonics for lab-on-a-chip NanoSilicon photonics Conclusion

51 Nanosilicon photonics: a platform where silicon nanoclusters enable new functionalities in silicon photonics

52 Silicon Nanophotonics Confine carriers on nanoscale dimensions Confine photons on nanoscale dimensions 10 μm

53 Silicon quantum dots 50 nm

54 Silicon quantum dots E c-si g Bulk Silicon: Indirect band-gap inefficient light emitter Nanocrystalline-Si: Direct-gap due to QCE Strong visible light emission

55

56

57 Purcel effect

58 Integration of microdisk with a waveguide

59 photonics ELectronics functional CEIVER RANSC all SILICON TR THE Integration on CMOS CMOS capacitor based on Si-NC gate 25/02/ Marconi, Anopchenko

60 photonics ELectronics functional CON TR RANSC CEIVER THE all SILI Light Integration Emitting on Proprieties CMOS Luminescent Region Forward Bias Reverse Bias -5 V Poly p-type Si substrate n-type Al

61 photonics ELectronics functional Integration on CMOS 2 ) (μw / cm 2 1 (2 nm SiO 2 / 3 nm SRO) Graded energy gap (2 nm SiO 2 / 4 nm SRO) p-type silicon wafer + - Active Si-NC n-type poly- silicon 100 nm O ptical pow wer density ficiency (%) Power eff Current density (ma / cm 2 ) Current density (ma / cm 2 )

62 photonics ELectronics functional CON TR RANSC CEIVER all SILI THE Integration on CMOS Forward Bias Reverse Bias Poly p-type Si substrate n-type Al Detection Region 25/02/2010

63 photonics ELectronics functional Integration on CMOS TTL in TTL out 25/02/ Marconi

64 All optical switching with silicon nanocrystals n=n 0 +n 2 I α=α 0 +β I ( )( ) T = 1 2ξ 1 ξ 1 cosδϕ

65 Comparison to other nonlinear materials Silica n 2 = (1.54x10-16 ) cm 2 /W [3,4] Bulk Silicon n 2 = (4.5x10-14 ) cm 2 /W [3,4] GaAs n 2 = (1.59x10-13 ) cm 2 /W [5] Si-ncs n 2 = (2 8x10-13 ) cm 2 /W [present work] [3] Handbook of Nonlinear Optics [4] Adair R. et al., Physical Review B, 39, 3337, (February 1989). [5] [] M. Dinu et al., Applied Physics Letters, 82, 2954 (2003).

66 All optical switching Si nanocrystals activated slot waveguides A. Martinez et al. Nanoletters (2010)

67 A. Martinez et al. Nanoletters (2010)

68 Improved photovoltaic efficiency by applying novel effects at the limits of light-matter interaction

69 Improved photovoltaic efficiency by applying novel effects at the limits of light-matter interaction Photon electron energy conversion 32.9% Unabsorbed energy loss 18.7% Heat loss 46.8% Other losses 1.6%

70 Improved photovoltaic efficiency by applying novel effects at the limits of light-matter interaction

71 Improved photovoltaic efficiency by applying novel effects at the limits of light-matter interaction Secondary carrier generation Ryan, Anopchenko, Marconi APP FBK

72 Improved photovoltaic efficiency by applying novel effects at the limits of light-matter interaction Silicon nanocrystals Ryan, Anopchenko, Marconi APP FBK

73 Improved photovoltaic efficiency by applying novel effects at the limits of light-matter interaction Ryan, Anopchenko, Marconi APP FBK

74 Optica al function T SRO R SRO A SRO (b) PDS-2 PR PR PR ARC Δη INT Wavelength (nm) nsivity (A/W) ciency enha ncement Photorespon uantum effic P Internal qu A maximum enhancement of the internal quantum efficiency of 14%

75 Improve photovoltaic efficiency by applying novel effects at the limits of light-matter interaction Secondary carrier generation Ryan, Anopchenko, Marconi APP FBK - Minhaz

76 Cross section of the device Al (1%Si) 500 nm Al (1%Si) 500 nm LOCOS 500 nm SiO 2 (TEOS) 120 nm LPCVD Si 3 N 4 50 nm n-type Poly-Si 30 nm Si-rich Oxide 50 nm P-type Si substrate LOCOS 500 nm Al (1%Si) 500 nm Device area = 320 μm X 320 μm Ryan, Anopchenko, Marconi APP FBK - Minhaz

77 Cross section of the device Al (1%Si) 500 nm Al (1%Si) 500 nm LOCOS 500 nm SiO 2 (TEOS) 120 nm LPCVD Si 3 N 4 50 nm n-type Poly-Si 30 nm Si-rich Oxide 50 nm LOCOS 500 nm absorption P-type Si substrate Al (1%Si) 500 nm Device area = 320 μm X 320 μm Ryan, Anopchenko, Marconi APP FBK - Minhaz

78 Cross section of the device Al (1%Si) 500 nm Al (1%Si) 500 nm SiO 2 (TEOS) 120 nm LOCOS 500 nm multiplication LPCVD Si 3 N 4 50 nm n-type Poly-Si 30 nm Si-rich Oxide 50 nm LOCOS 500 nm absorption P-type Si substrate Al (1%Si) 500 nm Device area = 320 μm X 320 μm Ryan, Anopchenko, Marconi APP FBK - Minhaz

79 IR response in Γ3N Photo-cu urrent (I - I ) (m ma) L D > 1200 nm Applied Bias(V)

80 IR response in Γ3N Photo-cu urrent (I - I ) (m ma) L D > 1200 nm 633 nm 488 nm V oc = 500 mv Applied Bias(V)

81 IR response in Γ3N rrent (I - I ) (m ma) L D Ph hoto-cu > 1200 nm V oc = 500 mv 633 nm nm 488 nm nm Applied Bias(V)

82 IR response in Γ3N rrent (I - I ) (m ma) L D Ph hoto-cu > 1200 nm V oc = 500 mv 633 nm nm 10 % 488 nm nm Applied Bias(V)

83 Solar cell with an internal gain mechanism Secondary carrier generation e Ryan, Anopchenko, Marconi APP FBK - Minhaz

84 Outline Silicon Photonics State of the art Silicon Photonics for lab-on-a-chip NanoSilicon photonics Conclusion

85 Conclusions: Silicon photonics is a mature technology Silicon photonics allows fabricating thousands of photonic components in a single chip Silicon photonics merges electronics and photonics to enable novel functionalities Silicon photonics is not only bulk Silicon (nanosilicon, strained silicon, silicon/germanium, germanium,.) Silicon photonics is not only optical communication is much more

86 Bottom line: Each time the market catches size Silicon is the solution If you may want to compete with silicon, do not! Silicon will always make it

87

88 Acknowledgments EC: Helios, LIMA, Wadimos, Positive PAT: Gopsi, Naomi MAE: Italy-turkey, mexico, romania HCSC project and OptoI ITPAR

89 Acknowledgments