semiconductor software solutions Stefan Birner
|
|
|
- Prosper Hawkins
- 8 years ago
- Views:
Transcription
1 Stefan Birner Schmalkaldener Str. 34 D Munich Stefan Birner
2 Goal: Business plan & Spin-off Our vision: To establish as the de facto standard simulator for the next generation of electronic and optoelectronic semiconductor nano devices and materials. Stefan Birner, MPhys EXIST-Seed funding: Partner: Prof. Dr. Peter Vogl Theoretical Semiconductor Physics Walter Schottky Institute, TU Munich
3 The downscaling continues at least for the next decade quantum effects new devices (e.g. QCLs) new materials Our customers: Prof. Dr. Joel Schulman, HRL Laboratories* (USA): "Now that I've got nextnano 3 working, I am very impressed. I can see many uses for it. " And a few weeks later "We have been using very heavily recently to help design quantum dots with gates for a quantum computer application." *HRL is owned by The Boeing Company, General Motors and Raytheon Company.
4 Software for nano devices Simulation of nano semiconductor devices - electrical properties (current) - optical properties (lasers, sensors) - 1D/2D/3D, quantum physics (!) Customers: semiconductor industry (silicon), optoelectronics industry (III-V semiconductors), defense, research institutes, universities Annual market size: $100 million so far: 1000 downloads per year
5 Benefit: Less redesign cycles up to now (2004) future (2005) prototype simulation simulation prototype (optimum) fab improved I saved lots of prototype redesign cycles! fab time, cost
6 Optical absorption: Quantum Well & Infineon Technologies perfect match to experiment!
7 Optical absorption: Quantum Well & Infineon Technologies optimize design by simulation!
8 Quantum Dot Lasers & Infineon Technologies ε xx InAs 20 nm GaAs ε xz - + Efficient light emission Strain Piezocharge Wave functions ε xx Electron InAs 20 nm GaAs ε xz No light emission + - Hole
9 Example: Diluted Nitrides Diluted nitrides: GaAsN / InGaAsN => conduction band energy QDs: Variation of capping material
10 Example: Diluted Nitrides QWs: Use absorption spectra to extract band offsets Infineon Technologies, CPR Photonics Group
11 E(k) dispersion in GaN next generation 3D nanodevice simulator
12 Unstrained silicon: E(k) & Freescale
13 Strained silicon: Uniaxial along [110] & Freescale
14 Double Gate MOSFET & Infineon Technologies Nano MOSFET* *metal oxide semiconductor field effect transistor Future: strained silicon
15 Double Gate MOSFET & Infineon Technologies
16 Hexagonal GaN Quantum Dots next generation 3D nanodevice simulator
17 Hexagonal GaN Quantum Dots next generation 3D nanodevice simulator
18 Hexagonal GaN Quantum Dots next generation 3D nanodevice simulator
19 Hexagonal GaN Quantum Dots next generation 3D nanodevice simulator
20 BIO- for Bio Chips Ion Sensitive Field Effect Transistor (ISFET) to detect ions, charged molecules, DNA, ph value electrolyte solution (ions) z charge at oxide/electrolyte Potential [V] interface GaN AlGaN GaN GaO Electrolyte z [µm] σ adsorbed [10 13 e/cm 2 ] Source y x Glue GaN AlGaN 2DEG GaN Electrolyte Oxide P PE Substrate P SP P SP P SP ph value Drain
21 BIO- for Bio Chips next generation 3D nanodevice simulator
22 Education: Triangular well next generation 3D nanodevice simulator
23 Education: Double Quantum Well next generation 3D nanodevice simulator
24 features Materials: Si, Ge, Si x Ge 1-x GaAs, AlAs, InAs, GaP, AlP, InP, GaSb, AlSb, InSb e.g. In x Ga 1-x As, Al x Ga 1-x As y P 1-y, InGaAsN Nitrides: GaN, AlN, InN (zincblende & wurtzite) strain, piezo and pyroeffects, deformation potentials, 8x8 k.p theory, optics all crystallographic directions, e.g. [001], [311] Schrödinger-Poisson-Current solver in 1D, 2D & 3D magnetic field, superlattices BIO- for bio chips (electrolyte) Device Editors (ICODE, Rome)
25 Business model Software including Fortran 90 source for free Online documentation is free Online Registration Support is not free (e.g. PayPal) Tutorial files (QCLs, MOSFETs) are not free Consulting + Workshops Programming of new features
26 NUSOD '05 Talks - Stefan Birner: T-shaped strained quantum wires Tu, 9:00 - Kwan Lee: InGaN quantum dots (Oxford) Tu, 9:50 Software exhibition (Tu-Th) workshop on Friday, 13:30-17:00 -QCSE(1D QW) -E(k) dispersion in GaAs (bulk & strained) - Biaxial strain & deformation potentials -3D QDs
6.772/SMA5111 - Compound Semiconductors Lecture 1 - The Compound Semiconductor Palette - Outline Announcements
6.772/SMA5111 - Compound Semiconductors Lecture 1 - The Compound Semiconductor Palette - Outline Announcements Handouts - General Information; Syllabus; Lecture 1 Notes Why are semiconductors useful to
Types of Epitaxy. Homoepitaxy. Heteroepitaxy
Epitaxy Epitaxial Growth Epitaxy means the growth of a single crystal film on top of a crystalline substrate. For most thin film applications (hard and soft coatings, optical coatings, protective coatings)
Nanoscale Resolution Options for Optical Localization Techniques. C. Boit TU Berlin Chair of Semiconductor Devices
berlin Nanoscale Resolution Options for Optical Localization Techniques C. Boit TU Berlin Chair of Semiconductor Devices EUFANET Workshop on Optical Localization Techniques Toulouse, Jan 26, 2009 Jan 26,
Chemical Synthesis. Overview. Chemical Synthesis of Nanocrystals. Self-Assembly of Nanocrystals. Example: Cu 146 Se 73 (PPh 3 ) 30
Chemical Synthesis Spontaneous organization of molecules into stable, structurally well-defined aggregates at the nanometer length scale. Overview The 1-100 nm nanoscale length is in between traditional
Arizona Institute for Renewable Energy & the Solar Power Laboratories
Arizona Institute for Renewable Energy & the Solar Power Laboratories International Photovoltaic Reliability Workshop July 29-31, Tempe AZ Christiana Honsberg, Stephen Goodnick, Stuart Bowden Arizona State
UV LED based on AlGaN
UV LED based on AlGaN by Johannes Neyer IncoherentLightsources 2013 Content History of Light Emitting Diodes (LEDs) Working principle Types of LEDs UV LEDs AlGaN LED Comparison to Hg low vapour pressure
The MOSFET Transistor
The MOSFET Transistor The basic active component on all silicon chips is the MOSFET Metal Oxide Semiconductor Field Effect Transistor Schematic symbol G Gate S Source D Drain The voltage on the gate controls
Graphene a material for the future
Graphene a material for the future by Olav Thorsen What is graphene? What is graphene? Simply put, it is a thin layer of pure carbon What is graphene? Simply put, it is a thin layer of pure carbon It has
Electronic structure and transmission characteristics of SiGe nanowires
Birck Nanotechnology Center Other Nanotechnology Publications Purdue Libraries Year 2008 Electronic structure and transmission characteristics of SiGe nanowires Neerav Kharche Mathieu Luisier Timothy B.
Unternehmerseminar WS 2009 / 2010
Unternehmerseminar WS 2009 / 2010 Fachbereich: Maschinenbau und Mechatronik Autor / Thema / Titel: Key Enabling Technology Business Planning Process: Product Roadmaps 1 Table of Contents About AIXTRON
How MOCVD. Works Deposition Technology for Beginners
How MOCVD Works Deposition Technology for Beginners Contents MOCVD for Beginners...3 MOCVD A Definition...4 Planetary Reactor Technology...5 Close Coupled Showerhead Technology...6 AIXTRON MOCVD Production
We know how to write nanometer. extreme lithography. extreme lithography. xlith Gesellschaft für Hochauflösende Lithografie Support & Consulting mbh
extreme lithography extreme lithography xlith Gesellschaft für Hochauflösende Lithografie Support & Consulting mbh Wilhelm-Runge-Str. 11 89081 Ulm Germany phone +49 731 505 59 00 fax +49 731 505 59 05
Nanotechnologies for the Integrated Circuits
Nanotechnologies for the Integrated Circuits September 23, 2015 Dr. Bertrand Cambou Professor of Practice NAU, Cybersecurity School of Informatics, Computing, and Cyber-Systems Agenda The Market Silicon
6.772/SMA5111 - Compound Semiconductors Lecture 18 - Light Emitting Diodes - Outline
6.772/SMA5111 - Compound Semiconductors Lecture 18 - Light Emitting Diodes - Outline Recombination Processes (continued from Lecture 17) Radiative vs. non-radiative Relative carrier lifetimes Light emitting
Silicon Drift Detector Product Brochure Update 2013
Silicon Drift Detector Product Brochure Update 2013 Content Classic Silicon Drift Detector High Resolution Silicon Drift Detector Multielement Silicon Detector Extra Large Detector Series July 2013 About
Silicon photonics: low cost and high performance. L. Pavesi 18-11-10
Silicon photonics: a new technology platform to enable low cost and high performance photonics Outline Silicon Photonics State of the art Silicon Photonics for lab-on-a-chip NanoSilicon photonics Conclusion
Local Heating Attacks on Flash Memory Devices. Dr Sergei Skorobogatov
Local Heating Attacks on Flash Memory Devices Dr Sergei Skorobogatov http://www.cl.cam.ac.uk/~sps32 email: sps32@cam.ac.uk Introduction Semi-invasive attacks were introduced in 2002 ( Optical fault induction
Steps to the exploitation of millimeter and sub-millimeter wave generation and detection for communication, sensing, and imaging
Steps to the exploitation of millimeter and sub-millimeter wave generation and detection for communication, sensing, and imaging Collaboration: Germany: TU Darmstadt, Institut für Hochfrequenztechnik,
Project 2B Building a Solar Cell (2): Solar Cell Performance
April. 15, 2010 Due April. 29, 2010 Project 2B Building a Solar Cell (2): Solar Cell Performance Objective: In this project we are going to experimentally measure the I-V characteristics, energy conversion
h e l p s y o u C O N T R O L
contamination analysis for compound semiconductors ANALYTICAL SERVICES B u r i e d d e f e c t s, E v a n s A n a l y t i c a l g r o u p h e l p s y o u C O N T R O L C O N T A M I N A T I O N Contamination
Lecture 1. Introduction to Semiconductor Devices. Reading:
Lecture 1 Introduction to Semiconductor Devices Reading: Notes and Anderson 2 Chapters 1.1-1.3, 1.7-1.9 Atoms to Operational Amplifiers The goal of this course is to teach the fundamentals of non-linear
Scanning Near Field Optical Microscopy: Principle, Instrumentation and Applications
Scanning Near Field Optical Microscopy: Principle, Instrumentation and Applications Saulius Marcinkevičius Optics, ICT, KTH 1 Outline Optical near field. Principle of scanning near field optical microscope
E F G. Overview of the activities. SAPIE ZA Università di Roma - Laboratorio di Fotonica Molecolare
SAPIE ZA Università di Roma Dipartimento di Energetica Laboratorio di Fotonica Molecolare Francesco Michelotti E-Mail: francesco.michelotti@uniroma1.it Tel: +39 06-49.91.65.62 Workshop Future Trends in
Hard Condensed Matter WZI
Hard Condensed Matter WZI Tom Gregorkiewicz University of Amsterdam VU-LaserLab Dec 10, 2015 Hard Condensed Matter Cluster Quantum Matter Optoelectronic Materials Quantum Matter Amsterdam Mark Golden Anne
Technology Developments Towars Silicon Photonics Integration
Technology Developments Towars Silicon Photonics Integration Marco Romagnoli Advanced Technologies for Integrated Photonics, CNIT Venezia - November 23 th, 2012 Medium short reach interconnection Example:
NANOSCALE SCIENCE AND ENGINEERING: MATERIALS, ELECTRONICS, PHOTONICS, BIOSENSORS AND BEYOND
Inversion mode MOSFET p- pn junction Silicon film (n- type) Gate Silicon film (p- type) Gate oxide Continuing Education Program (CEP) on NANOSCALE SCIENCE AND ENGINEERING: MATERIALS, ELECTRONICS, PHOTONICS,
CONTENTS. Preface. 1.1.2. Energy bands of a crystal (intuitive approach)
CONTENTS Preface. Energy Band Theory.. Electron in a crystal... Two examples of electron behavior... Free electron...2. The particle-in-a-box approach..2. Energy bands of a crystal (intuitive approach)..3.
Materials Engineering at the ZMNS: From Nanostructures to Optoelectronic Devices
Materials Engineering at the ZMNS: From Nanostructures to Optoelectronic Devices Gottfried Strasser Institut für Festkörperelektronik Zentrum für Mikro- und Nanostrukturen Fakultät für Elektrotechnik und
Company presentation. Closed Joint Stock Company Superconducting nanotechnology SCONTEL
Company presentation Closed Joint Stock Company Superconducting nanotechnology SCONTEL 1 About us SCONTEL was founded in 2004 as a spinoff of the Radio-Physics Research&Education Center (RPhREC) (group
ECE 410: VLSI Design Course Introduction
ECE 410: VLSI Design Course Introduction Professor Andrew Mason Michigan State University Spring 2008 ECE 410, Prof. A. Mason Lecture Notes Page i.1 Age of electronics microcontrollers, DSPs, and other
Preparation of ZnS and SnS Nanopowders by Modified SILAR Technique
Journal of Physical Sciences, Vol. 13, 009, 9-34 ISSN: 097-8791 : www.vidyasagar.ac.in/journal Preparation of ZnS and SnS Nanopowders by Modified SILAR Technique Department of Physics The University of
Recent developments in high bandwidth optical interconnects. Brian Corbett. www.tyndall.ie
Recent developments in high bandwidth optical interconnects Brian Corbett Outline Introduction to photonics for interconnections Polymeric waveguides and the Firefly project Silicon on insulator (SOI)
Lecture 3: Optical Properties of Bulk and Nano. 5 nm
Lecture 3: Optical Properties of Bulk and Nano 5 nm The Previous Lecture Origin frequency dependence of χ in real materials Lorentz model (harmonic oscillator model) 0 e - n( ) n' n '' n ' = 1 + Nucleus
nanohub.org Toward On-Line Simulation for Materials and Nanodevices by Design
Univ. of Florida, Univ. of Illinois, Morgan State Univ., Northwestern Univ. Purdue Univ. Stanford Univ., UTEP nanohub.org Toward On-Line Simulation for Materials and Nanodevices by Design 1 Gerhard Klimeck,
Improved predictive modeling of white LEDs with accurate luminescence simulation and practical inputs
Improved predictive modeling of white LEDs with accurate luminescence simulation and practical inputs TracePro Opto-Mechanical Design Software s Fluorescence Property Utility TracePro s Fluorescence Property
L innovazione tecnologica dell industria italiana verso la visione europea del prossimo futuro
L innovazione tecnologica dell industria italiana verso la visione europea del prossimo futuro Mercoledì 2 Aprile 2014 Antonio D Errico, Francesco Testa, Roberto Sabella, Ericsson Silicon Photonics Opportunities
organismos internacionales
Semiconductores de potencia de gap ancho en organismos internacionales Philippe Godignon & Power devices and Systems Group Systems Integration Department Centro Nacional de Microelectrónica, CNM CNM-CSIC,
Quantum- dot based nonlinear source of THz radia5on
Quantum- dot based nonlinear source of THz radia5on A. Andronico a, J. Claudon b, M. Munsch b, I. Favero a, S. Ducci a, J. M. Gérard b, and G. Leo a a Univ Paris Diderot, MPQ Lab, CNRS- UMR 7162, Paris,
Chapter 5. Second Edition ( 2001 McGraw-Hill) 5.6 Doped GaAs. Solution
Chapter 5 5.6 Doped GaAs Consider the GaAs crystal at 300 K. a. Calculate the intrinsic conductivity and resistivity. Second Edition ( 2001 McGraw-Hill) b. In a sample containing only 10 15 cm -3 ionized
Nanoelectronics 09. Atsufumi Hirohata Department of Electronics. Quick Review over the Last Lecture
Nanoelectronics 09 Atsufumi Hirohata Department of Electronics 12:00 Wednesday, 4/February/2015 (P/L 006) Quick Review over the Last Lecture ( Field effect transistor (FET) ): ( Drain ) current increases
Focused Ion beam nanopatterning: potential application in photovoltaics
Focused Ion beam nanopatterning: potential application in photovoltaics Research Infrastructure: Location: FIB-Focused Ion Beam ENEA Portici (Italy) Date March, 26 2013 Speakers: Vera La Ferrara, ENEA
Scientific Exchange Program
Scientific Exchange Program Electrical characterization of photon detectors based on acoustic charge transport Dr. Paulo Santos, Paul Drude Institute, Berlin,Germany Dr. Pablo Diniz Batista, Brazilian
Aplicaciones de la nanolitografía de oxidación por AFM
ForceTool Aplicaciones de la nanolitografía de oxidación por AFM (AFM oxidation nanolithography or Local oxidation nanolithography) Templates for the growth of molecular arquitectures Transistors Sensors
Secondary Ion Mass Spectrometry
Secondary Ion Mass Spectrometry A PRACTICAL HANDBOOK FOR DEPTH PROFILING AND BULK IMPURITY ANALYSIS R. G. Wilson Hughes Research Laboratories Malibu, California F. A. Stevie AT&T Bell Laboratories Allentown,
THIN-FILM SILICON SOLAR CELLS
ENGINEERING SCIENCES Micro- and Nanotechnology THIN-FILM SILICON SOLAR CELLS Arvind Shah, Editor The main authors of Thin-Film Silicon Solar Cells are Christophe Ballif, Wolfhard Beyer, Friedhelm Finger,
Biologically sensi-ve field- effect transistors: Part 1 (measuring Ions and biochemical species)
Biologically sensi-ve field- effect transistors: Part 1 (measuring Ions and biochemical species) Henrique Leonel Gomes Universidade do Algarve, FCT, Campus de Gambelas, 8000 Faro, Portugal (hgomes@ualg.pt)
Mapping spins and light in semiconductors. Vanessa Sih Physics Department
Mapping spins and light in semiconductors Vanessa Sih Physics Department University of Michigan November 9, 2012 Topic 1: Mapping spins (spin transport and spin-orbit effects) Time and spatially resolved
Lecture 3: Optical Properties of Bulk and Nano. 5 nm
Lecture 3: Optical Properties of Bulk and Nano 5 nm First H/W#1 is due Sept. 10 Course Info The Previous Lecture Origin frequency dependence of χ in real materials Lorentz model (harmonic oscillator model)
Lead-Free Universal Solders for Optical and MEMS Packaging
Lead-Free Universal Solders for Optical and MEMS Packaging Sungho Jin Univ. of California, San Diego, La Jolla CA 92093 OUTLINE -- Introduction -- Universal Solder Fabrication -- Microstructure -- Direct
Physical Properties and Functionalization of Low-Dimensional Materials
Physical Properties and Functionalization of Low-Dimensional Materials Physics Department, University of Trieste Graduate School of Physics, XXVI cycle Supervisor: Co-supervisor: Prof. Alessandro BARALDI
Statistical Models for Hot Electron Degradation in Nano-Scaled MOSFET Devices
2006, 대한 산업공학회 추계학술대회 Session C3 : Statistical models Statistical Models for Hot Electron Degradation in Nano-Scaled MOSFET Devices Seong-joon Kim, Suk Joo Bae Dept. of Industrial Engineering, Hanyang
Hello and Welcome to this presentation on LED Basics. In this presentation we will look at a few topics in semiconductor lighting such as light
Hello and Welcome to this presentation on LED Basics. In this presentation we will look at a few topics in semiconductor lighting such as light generation from a semiconductor material, LED chip technology,
Introduction to VLSI Fabrication Technologies. Emanuele Baravelli
Introduction to VLSI Fabrication Technologies Emanuele Baravelli 27/09/2005 Organization Materials Used in VLSI Fabrication VLSI Fabrication Technologies Overview of Fabrication Methods Device simulation
DESIGN, FABRICATION AND ELETRICAL CHARACTERIZATION OF SOI FINFET TRANSISTORS
DESIGN, FABRICATION AND ELETRICAL CHARACTERIZATION OF SOI FINFET TRANSISTORS Prof. Dr. João Antonio Martino Professor Titular Departamento de Engenharia de Sistemas Eletrônicos Escola Politécnica da Universidade
Solid State Electronics and Photonics Electrical and Computer Engineering The Ohio State University
Solid State Electronics and Photonics Electrical and Computer Engineering The Ohio State University An Overview for Prospective Students http://www.ece.osu.edu/ssep SSEP Area: Who Are We? First Row Betty
Novel inkjettable copper ink utilizing processing temperatures under 100 degrees C without the need of inert atmosphere
Novel inkjettable copper ink utilizing processing temperatures under 100 degrees C without the need of inert atmosphere Printed Electronics Europe April 7-8, 2009 Dresden, Germany Dr. Zvi Yaniv Applied
DEVELOPMENTS & TRENDS IN FEOL MATERIALS FOR ADVANCED SEMICONDUCTOR DEVICES Michael Corbett mcorbett@linx-consulting.com Semicon Taiwan2015
DEVELOPMENTS & TRENDS IN FEOL MATERIALS FOR ADVANCED SEMICONDUCTOR DEVICES Michael Corbett mcorbett@linx-consulting.com Semicon Taiwan2015 LINX BACKGROUND Linx Consulting 1. We help our clients to succeed
COURSE: PHYSICS DEGREE: COMPUTER ENGINEERING year: 1st SEMESTER: 1st
COURSE: PHYSICS DEGREE: COMPUTER ENGINEERING year: 1st SEMESTER: 1st WEEKLY PROGRAMMING WEE K SESSI ON DESCRIPTION GROUPS GROUPS Special room for LECTU PRAC session RES TICAL (computer classroom, audiovisual
Wafer Manufacturing. Reading Assignments: Plummer, Chap 3.1~3.4
Wafer Manufacturing Reading Assignments: Plummer, Chap 3.1~3.4 1 Periodic Table Roman letters give valence of the Elements 2 Why Silicon? First transistor, Shockley, Bardeen, Brattain1947 Made by Germanium
Spectroscopic Ellipsometry:
Spectroscopic : What it is, what it will do, and what it won t do by Harland G. Tompkins Introduction Fundamentals Anatomy of an ellipsometric spectrum Analysis of an ellipsometric spectrum What you can
From Nano-Electronics and Photonics to Renewable Energy
From Nano-Electronics and Photonics to Renewable Energy Tom Smy Department of Electronics, Carleton University Questions are welcome! OUTLINE Introduction: to EE and Engineering Physics Renewable Energy
Tobias Märkl. November 16, 2009
,, Tobias Märkl to 1/f November 16, 2009 1 / 33 Content 1 duction to of Statistical Comparison to Other Types of Noise of of 2 Random duction to Random General of, to 1/f 3 4 2 / 33 , to 1/f 3 / 33 What
Latest Advances in Solar Cell Technology
By Skye McClain, Nerac Analyst Nerac analysts have expertise in just about every area of technology from food & nutrition and medical devices, to engineering and materials science. We provide insight to
How to Design and Build a Building Network
Logo azienda/università BC1 Le tecnologie Elettroniche e Informatiche al servizio della gestione energetica Enrico Sangiorgi Workshop Diapositiva 1 BC1 inserire i propri riferimenti Nome e Cognome relatore
Introduction to CMOS VLSI Design
Introduction to CMOS VLSI esign Slides adapted from: N. Weste,. Harris, CMOS VLSI esign, Addison-Wesley, 3/e, 24 Introduction Integrated Circuits: many transistors on one chip Very Large Scale Integration
Quantum Systems for Information Technology
Lecture Quantum Systems for Information Technology fall term (HS) 2010 Lecturer: e Andreas Wallraff office: HPF D 8/9, ETH Hoenggerberg email: qsit-lecture@phys.ethz.ch What is this lecture about? Quantum
Contents of Technology Course
Contents of Technology Course General observations: The material is organized in modules. Each module treats a distinct part of device fabrication. There is also an introduction (Module 1), a part that
Tecnologie TeraHertz per la Sicurezza
Tecnologie TeraHertz per la Sicurezza Aldo Di Carlo, Dept. Electr. Eng. Univ. Rome Tor Vergata (ITAY) In collaboration with: Francesca Brunetti,, Claudio Paoloni, Maria etizia Teranova, Matteo Cirillo
High Open Circuit Voltage of MQW Amorphous Silicon Photovoltaic Structures
High Open Circuit Voltage of MQW Amorphous Silicon Photovoltaic Structures ARGYRIOS C. VARONIDES Physics and EE Department University of Scranton 800 Linden Street, Scranton PA, 18510 United States Abstract:
Semiconductor doping. Si solar Cell
Semiconductor doping Si solar Cell Two Levels of Masks - photoresist, alignment Etch and oxidation to isolate thermal oxide, deposited oxide, wet etching, dry etching, isolation schemes Doping - diffusion/ion
Implementation Of High-k/Metal Gates In High-Volume Manufacturing
White Paper Implementation Of High-k/Metal Gates In High-Volume Manufacturing INTRODUCTION There have been significant breakthroughs in IC technology in the past decade. The upper interconnect layers of
From lowest energy to highest energy, which of the following correctly orders the different categories of electromagnetic radiation?
From lowest energy to highest energy, which of the following correctly orders the different categories of electromagnetic radiation? From lowest energy to highest energy, which of the following correctly
Optical Hyperdoping: Transforming Semiconductor Band Structure for Solar Energy Harvesting
Optical Hyperdoping: Transforming Semiconductor Band Structure for Solar Energy Harvesting 3G Solar Technologies Multidisciplinary Workshop MRS Spring Meeting San Francisco, CA, 5 April 2010 Michael P.
Broadband THz Generation from Photoconductive Antenna
Progress In Electromagnetics Research Symposium 2005, Hangzhou, China, August 22-26 331 Broadband THz Generation from Photoconductive Antenna Qing Chang 1, Dongxiao Yang 1,2, and Liang Wang 1 1 Zhejiang
Advanced VLSI Design CMOS Processing Technology
Isolation of transistors, i.e., their source and drains, from other transistors is needed to reduce electrical interactions between them. For technologies
FYS3410 - Vår 2015 (Kondenserte fasers fysikk) http://www.uio.no/studier/emner/matnat/fys/fys3410/v15/index.html
FYS3410 - Vår 015 (Kondenserte fasers fysikk) http://www.uio.no/studier/emner/matnat/fys/fys3410/v15/index.html Pensum: Introduction to Solid State Physics by Charles Kittel (Chapters 1-9 and 17, 18, 0,
Fluids Confined in Carbon Nanotubes
Fluids Confined in Carbon Nanotubes Constantine M. Megaridis Micro/Nanoscale Fluid Transport Laboratory Mechanical and Industrial Engineering University of Illinois at Chicago 1 Background and Societal
Silicon, the test mass substrate of tomorrow? Jerome Degallaix The Next Detectors for Gravitational Wave Astronomy Beijing - 2015
Silicon, the test mass substrate of tomorrow? Jerome Degallaix The Next Detectors for Gravitational Wave Astronomy Beijing - 2015 Program of the talk... What we have now What we know about silicon What
UNIT I: INTRFERENCE & DIFFRACTION Div. B Div. D Div. F INTRFERENCE
107002: EngineeringPhysics Teaching Scheme: Lectures: 4 Hrs/week Practicals-2 Hrs./week T.W.-25 marks Examination Scheme: Paper-50 marks (2 hrs) Online -50marks Prerequisite: Basics till 12 th Standard
MEMS Processes from CMP
MEMS Processes from CMP MUMPS from MEMSCAP Bulk Micromachining 1 / 19 MEMSCAP MUMPS processes PolyMUMPS SOIMUMPS MetalMUMPS 2 / 19 MEMSCAP Standard Processes PolyMUMPs 8 lithography levels, 7 physical
GRAPHENE: A NEW STAR IN MATERIAL SCIENCE
GRAPHENE: A NEW STAR IN MATERIAL SCIENCE S. Sahoo 1 & A. K. Dutta 2 Department of Physics, National Institute of Technology Durgapur-713209, West Bengal, India. 1 E-mail: sukadevsahoo@yahoo.com 2 E-mail:
Alumni: University of California, Berkeley
Alumni: University of California, Berkeley ZhongSheng Luo PhD 2005 Hybrid integration of III V and Si materials and devices Technical Marketing Manager, Nanosys, Inc. (Palo Alto, CA) Alex Chediak PhD 2004
Nanotechnology and Its Impact on Modern Computer
Global Journal of Researches in Engineering General Engineering Volume 12 Issue 4 Version 1.0 Year 2012 Type: Double Blind Peer Reviewed International Research Journal Publisher: Global Journals Inc. (USA)
Clean room and Low temperature Laboratory. Graphene Transistors and quantum nanodevices. Cryofree refrigerators with turnkey design
Fabrication and Characterization of nanoelectronic devices Clean room and Low temperature Laboratory (Dr. Enrique Diez) Solar Cells and Terahertz laboratory (Dr. Yahya Meziani) Semiconductor Devices, TCAD
New materials on horizon for advanced logic technology in mobile era
New materials on horizon for advanced logic technology in mobile era source gate Kelin J. Kuhn, TED 2012 drain Franz Kreupl, IFX 2003 Hsinchu March 6, 2013 - Prof. Dr. Franz Kreupl 1 Outline Introduction
Basic principles and mechanisms of NSOM; Different scanning modes and systems of NSOM; General applications and advantages of NSOM.
Lecture 16: Near-field Scanning Optical Microscopy (NSOM) Background of NSOM; Basic principles and mechanisms of NSOM; Basic components of a NSOM; Different scanning modes and systems of NSOM; General
The future of nano-computing
The future of nano-computing George Bourianoff Intel Corporation Presented to International Engineering Consortium and Electrical and Computer Engineering Department Heads Jan. 27, 2003 San Jose, Ca 2/5/2003
KJM3100/KJM4100. Materialkjemi/Chemistry of materials. Poul Norby poul.norby@kjemi.uio.no Kjemisk Institutt, Kontor Ø148
KJM3100/KJM4100 Materialkjemi/Chemistry of materials Poul Norby poul.norby@kjemi.uio.no Kjemisk Institutt, Kontor Ø148 Some classes of materials which will be covered in the course: Minerals Ceramics Glass
The study of structural and optical properties of TiO 2 :Tb thin films
Optica Applicata, Vol. XXXVII, No. 4, 2007 The study of structural and optical properties of TiO 2 :Tb thin films AGNIESZKA BORKOWSKA, JAROSLAW DOMARADZKI, DANUTA KACZMAREK, DAMIAN WOJCIESZAK Faculty of
Laser beam sintering of coatings and structures
Laser beam sintering of coatings and structures Anne- Maria Reinecke, Peter Regenfuß, Maren Nieher, Sascha Klötzer, Robby Ebert, Horst Exner Laserinstitut Mittelsachsen e.v. an der Hochschule Mittweida,
JOURNAL INTEGRATED CIRCUITS AND SYSTEMS, VOL 1, NO. 3, JULY 2006. 39
JOURNAL INTEGRATED CIRCUITS AND SYSTEMS, VOL 1, NO. 3, JULY 2006. 39 Self-Assembled Polystyrene Micro-Spheres Applied for Photonic Crystals and Templates Fabrication Daniel S. Raimundo 1, Francisco J.
How To Become An Electrical Engineer
Department of Information Technology and Electrical Engineering Master Electrical Engineering and Information Technology Welcome Electrical engineers continue to invent and to shape the future of the digital
Photonic Networks for Data Centres and High Performance Computing
Photonic Networks for Data Centres and High Performance Computing Philip Watts Department of Electronic Engineering, UCL Yury Audzevich, Nick Barrow-Williams, Robert Mullins, Simon Moore, Andrew Moore
Data Storage and HAMR
Data Storage and HAMR Seagate Technology Mark Gubbins April 2013 Overview Storage Business and Hard Drives Magnetic Recording Head Technology HAMR - The Future of Magnetic Recording 2 The Move Toward Mobility
APPLICATION NOTES: Dimming InGaN LED
APPLICATION NOTES: Dimming InGaN LED Introduction: Indium gallium nitride (InGaN, In x Ga 1-x N) is a semiconductor material made of a mixture of gallium nitride (GaN) and indium nitride (InN). Indium
Click to edit Master title style. The Prospects for Cost-Competitive Photovoltaics: From Nanoscale Science to Macroscale Manufacturing
1 The Prospects for Cost-Competitive Photovoltaics: From Nanoscale Science to Macroscale Manufacturing Jeffrey S. Nelson, Manager Nanostructure Physics Department Center for Integrated Nanotechnologies
Applied Physics of solar energy conversion
Applied Physics of solar energy conversion Conventional solar cells, and how lazy thinking can slow you down Some new ideas *************************************************************** Our work on semiconductor
Fundamental Theory of Piezotronics
www.materialsviews.com Fundamental Theory of Piezotronics Yan Zhang, Ying Liu, and Zhong Lin Wang * Due to polarization of ions in crystals with noncentral symmetry, such as ZnO, GaN, and InN, a piezoelectric
IEEE EDS WIMNACT-47 47 th Workshop and IEEE EDS Mini-colloquium on NAnometer CMOS Technology MQ-1: NTU, MQ-2: NUS, MQ-3: SUTD
IEEE EDS WIMNACT-47 47 th Workshop and IEEE EDS Mini-colloquium on NAnometer CMOS Technology MQ-1: NTU, MQ-2: NUS, MQ-3: SUTD ORGANIZED AND SPONSORED BY IEEE EDS AND R/CPMT/ED SINGAPORE CHAPTER MQ-2: CO-HOSTED
Nanocomputer & Architecture
Nanocomputer & Architecture Yingjie Wei Western Michigan University Department of Computer Science CS 603 - Dr. Elise dedonckor Febrary 4 th, 2004 Nanocomputer Architecture Contents Overview of Nanotechnology