2SD1898 / 2SD1733 V CEO 80V I C 1.0A. Datasheet. NPN 1.0A 80V Middle Power Transistor. Outline. Features

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1 NPN.0 80V Middl Powr Transistor Datasht Faturs Paramtr V CEO ) Suitabl for Middl Powr Drivr 2) Complmntary PNP Typs : 2SB260 / 2SB8 3) Low V CE(sat) V CE(sat) = 0.4V Max. (I C /I B =500m/20m) 4) Lad Fr/RoHS Compliant. Valu 80V I C.0 Outlin MPT3 CPT3 Bas Collctor Emittr 2SD898 (SC-62) <SOT-89> Collctor Bas Emittr 2SD733 (SC-63) <SOT-428> Innr circuit Collctor Emittr Bas pplications Motor drivr, LED drivr Powr supply Packaging spcifications Part No. Packag Packag siz (mm) Taping cod Rl siz (mm) 2SD898 MPT T SD733 CPT TL 330 Tap width (mm) 2 6 Basic ordring unit (pcs) 2,500 Marking,000 DF D733 / Rv.F

2 bsolut maximum ratings (Ta = 25 C) Paramtr Symbol Valus Unit Collctor-bas voltag Collctor-mittr voltag V CBO 20 V V CEO 80 V Emittr-bas voltag V EBO 5 V Collctor currnt DC Pulsd I C.0 I CP * 2.0 Powr dissipation 2SD898 2SD733 P D 0.5 *2 2.0 *3 *4 0 *5 W W W W Junction tmpratur T j 50 C Rang of storag tmpratur * Pw=20ms, duty=/2 *2 Each trminal mountd on a rfrnc land *3 Mountd on a cramic board ( mm) *4 Mountd on a substrat *5 T C =25 C T stg -55 to +50 C Elctrical charactristics (Ta = 25 C) Paramtr Collctor-mittr brakdown voltag Collctor-bas brakdown voltag Emittr-bas brakdown voltag Symbol Conditions Min. Typ. Max. Unit BV CEO I C = m V BV CBO I C = 50m V BV EBO I E = 50m V Collctor cut-off currnt I CBO V CB = 00V - - m Emittr cut-off currnt I EBO V EB = 4V - - m Collctor-mittr saturation voltag V CE(sat) I C = 500m, I B = 20m V DC currnt gain h FE *6 V CE = 3V, I C = Transition frquncy f T V CE = 0V, I E = -50m f=00mh Z MHz Output capacitanc C ob V CB = 0V, I E = 0 f = MHz pf h FE rank catgoris Rank Q R h FE 20 to to 390 2/ Rv.F

3 Elctrical charactristic curvs(ta = 25 C) Fig. Ground Emittr Propagation Charactristics Fig.2 Typical Output Charactristics V CE = 5V Pulsd Ta=00ºC 25ºC -40ºC COLLECTOR CURRENT : I C [] BSE TO EMITTER VOLTGE : V BE [V] COLECTOR TO EMITTE VOLTGE : V CE [V] Fig.3 DC Currnt Gain vs. Collctor Currnt(I) Fig.4 DC Currnt Gain vs. Collctor Currnt(II) 000 V CE = 3V Pulsd 000 Ta=25ºC Pulsd DC CURRENT GIN : h FE 00 Ta=00ºC 25ºC -40ºC DC CURRENT GIN : h FE 00 V CE = 3V V / Rv.F

4 Elctrical charactristic curvs(ta = 25 C) COLLECTOR-EMITTER STURTION VOLTGE : V CE(sat) [V] Fig.5 Collctor-Emittr Saturation Voltag vs. Collctor Currnt (I) I C / I B = 20 Ta=00ºC 25ºC -40ºC COLLECTOR-EMITTER STURTION VOLTGE : V CE(sat) [V] Fig.6 Collctor-Emittr Saturation Voltag vs. Collctor Currnt (II) Ta=25ºC I C / I B =20/ 0/ Fig.7 Bas-Emittr Saturation Voltag vs. Collctor Currnt 0 Fig.8 Gain Bandwidth Product vs. Emittr Currnt BSE-EMITTER STURTION VOLTGE : V BE(sat) [V] 0. Ta= -40ºC 25ºC 00ºC I C / I B = TRNSITION FREQUENCY : f T [MHz] EMITTER CURRENT : I E [m] 4/ Rv.F

5 Elctrical charactristic curvs(ta = 25 C) COLLECTOR OUTPUT CPCITNCE : Cob [pf] EMITTER INPUT CPCITNCE : Cib [pf] Fig.9 Emittr input capacitanc vs. Emittr-Bas Voltag Collctor output capacitanc vs. Collctor-Bas Voltag COLLECTOR - BSE VOLTGE : V CB [V] EMITTER - BSE VOLTGE : V EB [V] COLLECTOR CURRENT : I C [] Fig.0 Saf Oprating ra SD898 00ms DC (Mountd on a rfrnc land) ms 0ms Ta=25ºC Singl non rptitiv puls COLLECTOR TO EMITTER VOLTGE : V CE [V] Fig. Saf Oprating ra COLLECTOR CURRENT : I C [] SD733 00ms DC Ta=25ºC Singl non rptitiv puls ms 0ms COLLECTOR TO EMITTER VOLTGE : V CE [V] 5/ Rv.F

6 Dimnsions (Unit : mm) MPT3 D b HE L E E Lp x S b b2 c b4 β y S S l b3 b5 l2 l3 Pattrn of trminal position aras [Not a rcommndd pattrn of soldring pads] DIM MILIMETERS INCHES MIN MX MIN MX b b b c D E HE LE Lp x y MILIMETERS INCHES DIM MIN MX MIN MX b b b l l l β Dimnsion in mm / inchs / Rv.F

7 Dimnsions (Unit : mm) D b 2 c B CPT3 L3 b2 b3 L4 L E L2 H L Lp c b x B 3 l3 l2 l b6 b5 Dimnsion in mm / inchs Pattrn of trminal position aras [Not a rcommndd pattrn of soldring pads] DIM MILIMETERS INCHES MIN MX MIN MX b b b b c c D E HE L L L L3 L Lp x DIM MILIMETERS INCHES MIN MX MIN MX b b l l l / Rv.F

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