spacing GEO Maβe in mm, wenn nicht anders angegeben/dimensions in mm, unless otherwise specified.

Transcription

1 Reflexlichtschranke im SMT-Gehäuse Reflective Interrupter in SMT Package SFH spacing GEO684 Type SFH 921 Anode Emitter Collector Cathode feo6422 Maβe in mm, wenn nicht anders angegeben/dimensions in mm, unless otherwise specified. Wesentliche Merkmale Optimaler Arbeitsabstand 1 mm bis 5 mm IR-GaAs-Lumineszenzdiode: Sender Si-NPN-Fototransistor: Empfänger Tageslichtsperrfilter Hoher Kollektor-Emitter-Strom typ..7 Geringe Sättigungsspannung Sender und Empfänger galvanisch getrennt Anwendungen Positionsmelder Endabschalter Drehzahlüberwachung, -regelung Bewegungssensor Features Optimal operating distance 1 mm to 5 mm IR-GaAs-emitter Silicon NPN phototransistor detector Daylight filter against undesired light effects High collector-emitter current typ..7 Low saturation voltage Emitter and detector electrically isolated Applications Position reporting End position switch Speed monitoring and regulating Motion transmitter Typ Type Bestellnummer Ordering Code SFH 921 Q6272-P SFH 921-1/2 Q6272-P SFH 921-2/3 Q6272-P SFH 921-3/4 Q6272-P I CE I F = 1, V CE = 5 V, d = 1 mm Data Sheet

2 SFH 921 Grenzwerte Maximum Ratings Sender (GaAs-Diode) Emitter (GaAs diode) Sperrspannung Reverse voltage Vorwärtsgleichstrom Forward current Verlustleistung Power dissipation V R 5 V I F 5 P tot 8 mw Empfänger (Si-Fototransistor) Detector (silicon phototransistor) Dauer-Kollektor-Emitter-Sperrspannung Continuous collector-emitter voltage Kollektor-Emitter-Sperrspannung, (t 2 min) Collector-emitter voltage, (t 2 min) Emitter-Kollektor-Sperrspannung Emitter-collector voltage Kollektorstrom Collector current Verlustleistung Total power dissipation V CE 16 V V CE 3 V EC 7 I C 1 P tot 1 mw Reflexlichtschranke Light reflection switch Lagertemperatur Storage temperature range Umgebungstemperatur Ambient temperature range Elektrostatische Entladung Electrostatic discharge T stg C T A ESD 2 KV Umweltbedingungen / Environment conditions 3 K3 acc. to EN (IEC ) Data Sheet

3 SFH 921 Löthinweise Soldering conditions Bauform Type Drypack Level acc. to IPSstand. 2 Tauch-, Schwalllötung Dip, wave soldering Peak temp. (solderbath) Max. time in peak zone Bitte Verarbeitungshinweise für SMT-Bauelemente beachten! Please observe the handling guidelines for SMT devices! Reflowlötung Reflow soldering Peak temp. (package temp.) Max. time in peak zone SFH n. a. 245 C 1 sec. n.a. Kolbenlötung Iron soldering (Iron temp.) Kennwerte (T A = 25 C) Characteristics Sender (IR-GaAs-Diode) Emitter (IR-GaAs diode) Durchlaβspannung Forward voltage I F = 5 Sperrstrom Reverse current V R = 5 V Kapazität Capacitance V R = V, f = 1 MHz V F 1.25 ( 1.65) V I R.1 ( 1) µa C O 25 pf Wärmewiderstand 1) R thja 4 K/W Thermal resistance 1) Empfänger (Si-Fototransistor) Detector (silicon phototransistor) Kapazität Capacitance V CE = 5 V, f = 1 MHz C CE 1 pf Kollektor-Emitter-Reststrom Collector-emitter leakage current V CE = 2 V Fotostrom (Fremdlichtempfindlichkeit) Photocurrent (outside light density) V CE = 5 V, E V = 1 Lx I CEO 3 ( 2) na I P 3.5 Data Sheet

4 SFH 921 Kennwerte (T A = 25 C) Characteristics (cont d) Wärmewiderstand 1) R thja 4 K/W Thermal resistance 1) Reflexlichtschranke Light reflection switch Kollektor-Emitterstrom Collector-emitter current Kodak neutral white test card, 9 % Reflexion I F = 1 ; V CE = 5 V; d = 1 mm Kollektor-Emitter-Sättigungsspannung Collector-emitter-saturation voltage Kodak neutral white test card, 9 % Reflexion I F = 1 ; d = 1 mm; I C = 85 µa 1) Montage auf PC-Board mit >5 mm 2 Padgröβe 1) Mounting on pcb with >5 mm 2 pad size I CE min..25 I CE typ..7 V CE sat.15 (.6) V d Reflector with 9% reflexion (Kodak neutral white test card) OHM2257 Data Sheet

5 SFH 921 Schaltzeiten (T A = 25 C, V CC = 5 V, I C = 1 1), R L = 1 kω) Switching times R L Ι C V CC Output OHM2258 Einschaltzeit Turn-on time Anstiegzeit Rise time Ausschaltzeit Turn-off time Abfallzeit Fall time t ein 65 µs t on t r 5 µs t aus 55 µs t off t f 5 µs 1) I C eingestellt über den Durchlaβstrom der Sendediode, den Reflexionsgrad und den Abstand des Reflektors vom Bauteil (d) 1) I C as a function of the forward current of the emitting diode, the degree of reflection and the distance between reflector and component (d) Collector current I C = f( d) I Cmax Permissible power dissipation for diode and transistor P tot = f (T A ) Switching characteristics t = f (R L ) T A = 25 o C, I F = 1 1 Ι C OHO Total power dissipation OHO OHO785 Ι C max % 8 P tot mw 12 t µ s Ι C = 1 µa Detector Emitter 1 2 t on t on t off t off 2 Kodak neutral white test card Mirror mm 5 d C 1 T A = 1 Ι C kω R L Data Sheet

6 Max. permissible forward current I F = f (T A ) OHO2259 Transistor capacitance (typ.) C CE = f (V CE ), T A =25 o C, f = 1 MHz 5 pf C CE OHO374 SFH 921 Collector current I C = f (I F ), spacing d to reflector = 1 mm, 9% reflection Ι C OHO V CE =5 V C 1 T A V 1 V CE Forward voltage (typ.) of the diode V F = f (T) 1.3 V F V = OHO2256 Relative spectral emission of emitter (GaAs) I rel = f (λ) and detector (Si) S rel = f (λ) 1 Ι rel S rel % Detector OHO786 Output characteristics (typ.) I C = f (V CE ), spacing to reflector: d = 1 mm, 9% reflection, T A = 25 o C 2. Ι C = 25 = 2 = 15 = 1 OHO C 1 T 2 7 Emitter nm 11 λ = V V CE Data Sheet