RClamp2504P & RClamp3304P RailClamp 2.5V & 3.3V TVS Arrays

Transcription

1 - RailClamp Description RailClamp is a low capacitance TS array designed to protect high speed data interfaces. This series has been specifically designed to protect sensitive components which are connected to data and transmission lines from overvoltage caused by ESD (electrostatic discharge), CDE (Cable Discharge Events), and EFT (electrical fast transients). The monolithic design incorporates surge rated, low capacitance steering diodes and a TS diode in a single package. Each line has a maximum capacitance of <.8pF to ground. The capacitance of each line is well matched for consistant signal balance. This device is optimized for ESD protection of portable electronics. It may be used to meet the ESD immunity requirements of IEC 6-4-2, Level 4 (±5k air, ±8k contact discharge). The RClamp TM 254P and RClamp TM 334P are constructed using Semtech s proprietary EPD process technology. The EPD process provides low standoff voltages with significant reductions in leakage current and capacitance over silicon-avalanche diode processes. They feature a true operating voltage of 2.5 volts and 3.3 volts for superior protection. These devices are in a 6-pin, RoHS/WEEE compliant, SLP66P6 package measuring.6 x.6 x.58mm. The leads are spaced at a pitch of.5mm and are finished with lead-free NiPdAu. RClamp254P & RClamp334P RailClamp 2.5 & 3.3 TS Arrays Features Transient protection for high-speed data lines to IEC (ESD) ±5k (air), ±8k (contact) IEC (EFT) 4A (5/5ns) Array of surge rated diodes with internal TS Diode Small package saves board space Protects up to four I/O lines Low capacitance (<.8pF) for high-speed interfaces Minimal insertion loss to 3.GHz Low operating voltage: 2.5 and 3.3 Low leakage current and clamping voltage Solid-state silicon-avalanche technology Mechanical Characteristics SLP66P6 package RoHS/WEEE Compliant Nominal Dimensions:.6 x.6 x.58 mm Lead Finish: NiPdAu Molding compound flammability rating: UL 94- Marking: Marking Code + Date Code Packaging: Tape and Reel Applications Multi Media Card (MMC) Interfaces SATA Interfaces SD Card Interfaces SIM Ports MDDI Ports MPPI Ports Circuit Diagram Pin Configuration GND.58 SLP66P6 (Bottom iew) Nominal Dimensions in mm Revision /5/28

2 Absolute Maximum Rating Rating Symbol alue Units Peak Peak Pulse Power (tp = 8/2μs) Pulse Current (tp = 8/2μs) P pk 8 Watts I PP 5 A ESD per IEC (Air) ESD per IEC (Contact) ESD 2 2 k Operating Temperature T J -4 to +85 C Storage Temperature T STG 55 to +5 - C Electrical Characteristics (T=25 o C) RClamp254P Parameter Symbol Conditions Minimum Typical Maximum Units Reverse Stand-Off RWM Pin 3 to GND 2. 5 Punch-Through Snap-Back PT SB I PT I SB = 2μA 2. 7 = 5mA 2. Reverse Leakage Current I R RWM = 2.5, T=25 C. 5 μa Clamping C I PP = A, t = 8/2μs p 6. 5 Clamping C I PP = 5A, t = 8/2μs p 3 Junction Capacitance C j R =, f = MHz Any I/O pin to GND R =, f = MHz Between I/O pins.8 pf.4 pf 28 Semtech Corp. 2

3 RClamp334P Parameter Symbol Conditions Minimum Typical Maximum Units Reverse Stand-Off RWM Pin 3 to GND 3. 3 Punch-Through Snap-Back PT SB I PT I SB = 2μA 3. 5 = 5mA 2. 8 Reverse Leakage Current I R RWM = 3.3, T=25 C. 5 μa Clamping C I PP = A, t = 8/2μs p Any I/O GND Clamping C I PP = 5A, t = 8/2μs p Any I/O to GND Junction Capacitance C j R =, f = MHz Any I/O pin to GND R =, f = MHz Between I/O pins pf.4 pf 28 Semtech Corp. 3

4 Typical Characteristics Non-Repetitive Peak Pulse Power vs. Pulse Time Power Derating Curve Peak Pulse Power - P PP (kw)... Pulse Duration - tp (us) % of Rated Power or IPP Ambient Temperature - T A ( o C) Pulse Waveform Normalized Capacitance vs. Reverse Percent of I PP e -t td = I PP /2 Waveform Parameters: tr = 8µs td = 2µs Time (µs) C J ( R ) / C J ( R =) f = MHz Reverse - R () Clamping vs. Peak Pulse Current I/O to GND Clamping vs. Peak Pulse Current I/O to I/O 5 2 RClamp334P Clamping - C () 5 RClamp254P Waveform Parameters: tr = 8μs td = 2μs Clamping - C () 5 5 RClamp334P RClamp254P Waveform Parameters: tr = 8μs td = 2μs Peak Pulse Current - I PP (A) Peak Pulse Current - I PP (A) 28 Semtech Corp. 4

5 Typical Characteristics Insertion Loss S2 (I/O to Gnd) Analog Crosstalk CH S2 LOG 6 db / REF db : db 9 MHz CH S2 LOG 2 db / REF db db -6 db -2 db : db.8 GHz 3: -.63 db 2.5 GHz -8 db -24 db -3 db -36 db MHz MHz GHz 3 GHz START. 3 MHz STOP 3. MHz START. 3 MHz STOP 3. MHz ESD Clamping (8k Contact per IEC 6-4-2) Note: Data is taken with a x attenuator 28 Semtech Corp. 5

6 Applications Information Device Connection for Protection of Four High-Speed Data Lines These devices are designed to protect low voltage data lines operating at 2.5 volts or 3.3 volts. When the voltage on the protected line exceeds the TS working voltage, the steering diodes are forward biased, conducting the transient current away from the sensitive circuitry, through the internal TS to ground. Data lines are connected at pins, 2, 5 and 6. The center pin should be connected directly to a ground plane. The path length is kept as short as possible to minimize parasitic inductance. For best results, multiple micro-vias connected to ground are recommended. Pins 3 and 4 are not connected. Note that pin 3 is connected internally to the cathode of the low voltage TS. It is not recommended that this pins be directly connected to a DC source greater than the snap-back votlage ( SB ) as the device can latch on as described below. EPD TS Characteristics These devices are constructed using Semtech s proprietary EPD technology. By utilizing the EPD technology, the device can effectively operate at 3.3 while maintaining excellent electrical characteristics. The EPD TS employs a complex nppn structure in contrast to the pn structure normally found in traditional silicon-avalanche TS diodes. Since the EPD TS devices use a 4-layer structure, they exhibit a slightly different I characteristic curve when compared to conventional devices. During normal operation, the device represents a high-impedance to the circuit up to the device working voltage ( RWM ). During an ESD event, the device will begin to conduct and will enter a low impedance state when the punch through voltage ( PT ) is exceeded. Unlike a conventional device, the low voltage TS will exhibit a slight negative resistance characteristic as it conducts current. This characteristic aids in lowering the clamping voltage of the device, but must be considered in applications where DC voltages are present. When the TS is conducting current, it will exhibit a slight snap-back or negative resistance characteristics due to its structure. This point is defined on the curve by the snap-back voltage ( SB ) Figure.. Pin Configuration (Top op Side iew) w) Pin Protection of Four Data Lines 2 3 Gnd Gnd Identification, 2, 5, 6 Input/Output Lines 4 Not Connected 3 Center Tab 2.5 or 3.3 (Do not connect this pin to a DC supply) greater than Ground ) S B and snap-back current (I SB ). To return to a nonconducting state, the current through the device must fall below the I SB (approximately <5mA) and the voltage must fall below the SB (normally 2.8 volts for a 3.3 device). If a 3.3 TS is connected to 3.3 DC source, it will never fall below the snap-back voltage of 2.8 and will therefore stay in a conducting state. 28 Semtech Corp. 6

7 Typical Applications Gnd SIM Port - Protection of Three Data Lines and CC 28 Semtech Corp. 7

8 Applications Information - Spice Model RClamp254P Spice Model RClamp254P Spice Parameters Parameter IS B J RS IB CJO TT U nit D (LCRD) D 2 (LCRD) D3 (TS) Amp E-2 E-2 2.9E- 2 olt 2.88 olt Ohm Farad.3E-2.3E-2 63E-2 Amp E-3 E-3 E-3 sec 2.54E E E- 9 M N EG e Semtech Corp. 8

9 Applications Information - Spice Model RClamp334P Spice Model RClamp334P Spice Parameters Parameter IS B J RS IB CJO TT U nit D (LCRD) D 2 (LCRD) D3 (TS) Amp E-2 E-2 2.9E- 2 olt 3. 3 olt Ohm Farad.3E-2.3E-2 73E-2 Amp E-3 E-3 E-3 sec 2.54E E E- 9 M N EG e Semtech Corp. 9

10 Outline Drawing - SLP66P6 A D B PIN INDICATOR (LASER MARK) aaa C A2 E D 2 E A A C LxN E/2 SEATING PLANE DIMENSIONS INCHES MILLIMETERS DIM MIN NOM MAX MIN NOM MAX A A A2 (.6) (.5) b D D E E e.2 BSC.5 BSC L N 6 6 aaa.4.9 bbb.4.9 e N bxn bbb C A B D/2 NOTES:. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES). 2. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. Land Pattern - SLP66P6 Z G Y P X F (C) DIMENSIONS DIM INCHES MILLIMETERS B.5.3 C.6.52 P F G X Y Z B NOTES:. THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY. CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR COMPANY'S MANUFACTURING GUIDELINES ARE MET 28 Semtech Corp.

11 Marking Ordering Information 254P YW 334P YW Part Number RClamp254P.TCT RClamp334P.TCT Working Qty per Reel Reel Size 2.5 olts 3, 7 Inch 3.3 olts 3, 7 Inch YW = Date Code RClamp254P RClamp334P RailClamp and RClamp are marks of Semtech Corporation Tape and Reel Specification Device Orientation in Tape (Pin upper left towards sprocket holes) A B K.78 +/-. mm.78 +/-. mm.69 +/-. mm Tape Width B, (Max) D D E F K (MAX) P P P 2 T(MAX) W 8 mm 4.2 mm.5 +. mm -. mm ).5 mm ±.5.75±. mm 3.5±.5 mm 2.4 mm 4.±. mm 4.±. mm 2.±.5 mm.4 mm 8. mm +.3 mm -. mm Contact Information Semtech Corporation Protection Products Division 2 Flynn Rd., Camarillo, CA 932 Phone: (85)498-2 FAX (85) Semtech Corp.