RClamp2574NQ. High Power TVS for Ethernet Interfaces. PROTECTION PRODUCTS - RailClamp Description. Features. Mechanical Characteristics.

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1 - Raillam Descrition Raillam TS diodes are secifically designed to rotect sensitive comonents which are connected to high-seed data and transmission lines from overvoltage caused by ESD (electrostatic discharge), DE (cable discharge events), and EFT (electrical fast transients). The unique design incororates surge rated, low caacitance steering diodes and a TS diode in a single ackage. The Rlam 7NQ is designed to relace u to two comonents for board level GbE rotection. Each device is designed to rotect two line airs. This is accomlished by routing traces through the device. When connected in this fashion, the device can withstand a high level of surge current (A, 8/us) while maintaining a low loading caacitance of less than F. The high surge caability means it can be used in high threat environments in alications such as Gigabit Ethernet, telecounication lines, and LDS interfaces. The Rlam 7NQ is constructed using Semtech s rorietary EPD rocess technology. The EPD rocess rovides low stand-off voltages with significant reductions in leakage current and caacitance over siliconavalanche diode rocesses. It features a true oerating voltage of. volts for suerior rotection. The Rlam7NQ is in a -in SLPN ackage. It measures. x. x.. The leads are finished with lead-free NiPdAu. Rlam 7NQ is qualified to AE-Q Grade. Schematic Features Pin onfiguration Rlam7NQ High Power TS for Ethernet Interfaces Transient rotection for high-seed data lines to IE -- (ESD) ±k (air), ±k (contact) IE -- (EFT) A (/ns) IE -- (Lightning) A (8/µs) Array of surge rated diodes with internal TS Diode Small ackage saves board sace Protects two line airs Low caacitance for high-seed interfaces Low variation in caacitance vs. bias voltage Low claming voltage Qualified to AE-Q Grade Solid-state silicon-avalanche technology Mechanical haracteristics SLPN L ackage Pb-Free, Halogen Free, RoHS/WEEE omliant Nominal Dimensions:. x. x. Lead Finish: NiPdAu Molding comound flaability rating: UL 9- Marking : Marking code + Date code Packaging : Tae and Reel Alications // Ethernet entral Office Equiment LDS Interfaces MagJacks / Integrated Magnetics Notebooks / Desktos / Servers Pin LINE In Pin LINE Out Pin LINE In Pin LINE In Pin 7 LINE Out Pin LINE In Line In Line In Line Out Line Out Pin 9 LINE Out Pin LINE Out Line In Line In Line Out Line Out enter Tabs and Pins, 8 Revision //

2 Rlam7NQ Absolute Maximum RatingsRating Rating Symbol alue Units Peak Pulse Power (t = 8/µs) P k Peak Pulse urrent (t = 8/µs) I P P Watts A ESD er IE -- (Air) ESD er IE -- (ontact) ESD +/- +/- k Oerating Temerature T J - to + Storage Temerature T STG to + - Electrical haracteristics (T= O unless otherwise secified) Parameter Symbol onditions Minimum Tyical Maximum Units Reverse Stand-Off WM R. Punch-Through Sna-Back PT SB I PT I SB = µ A. 7 = ma. Reverse Leakage urrent I R RWM =. T= O.. T= O.. µa I laming PP = A, t = 8/µ s Any I/O to Ground I laming PP = A, t = 8/µ s Any I/O to Ground I laming PP = A, t = 8/µ s Any I/O to Ground I PP = A, t = 8/µ s, laming Line-to-Line, two I/O ins connected together on each line (Note ). 7. Junction aacitance j R =, f = MHz Any I/O to Ground R =, f = MHz Between I/O ins T= O.7 T= O 7 F.7 F Notes: ) Ratings with ins connected together er the recoended configuration (ie in connected to in, in connected to in 9, in connected to in 7, and in connected to in ). ) Guaranteed by design (not roduction tested) Semtech or.

3 Rlam7NQ Tyical haracteristics Non-Reetitive Peak Pulse Power vs. Pulse Time Power Derating urve Peak Pulse Power - P PP (kw) % Rated Power or I PP (%) 8.. Pulse Duration - t (µs) 7 Ambient Temerature T A ( O ) Tyical laming vs. Peak Pulse urrent Tyical aacitance vs. Reverse laming - () T A = O Waveform Parameters: tr = 8µs; td = µs Line to Line Line to aacitance - j (f) T A = O f = MHz Line to Line Line to Peak Pulse urrent - I PP (A) Reverse - R () Forward - F () Tyical laming vs. Peak Pulse urrent Forward 8 T A = O Gnd to Line. Waveform Parameters: tr = 8µs; td = µs () Tyical ns/ns 8k ESD Surge Waveform T A = O. Waveform ns/ns; 8k eak. orrected for db attenuation. Measured with Ω db attenuator; Ω Scoe Inut Imedance. Peak Pulse urrent (A) 8 Time (ns) Semtech or.

4 Rlam7NQ Tyical haracteristics Insertion Loss S (I/O to I/O) Tyical rosstalk H S LOG db / REF db : -.db 8 MHz H S LOG db / REF db db : -.8 db 9 MHz db - db - db -8 db : -. db.8 GHz : -.7 db. GHz - db - db - db - db - db -8 db - db - db - db - db -8 db MHz MHz MHz GHz GHz - db START. MHz STOP. MHz - db START. MHz STOP. MHz Tyical Leakage urrent vs Temerature Tyical Sna Back vs Temerature R =. Reverse Leakage urrent (na) Line to Line Line to Sna Back ( SB ) () Line to Line Line to I SB = ma - Temerature ( O ) Tyical aacitance vs Temerature - Temerature ( O ) Tyical Punch Through vs Temerature 8 R= f=mhz Line to aacitance (F) Punch Thru () PT () LG PT () LL IPT=uA - Temerature ( O ) Semtech or. - Temerature ( O )

5 Rlam7NQ Alications Information Information Device onnection Otions for Protection of Four High-Seed Data Lines This device is designed to rotect four high-seed data lines (two line airs). It has been otimized for use on Ethernet interfaces where large magnitude lightning and ESD surges are exected. The Rlam7NQ is constructed using Semtech s rorietary EPD rocess technology. The EPD rocess rovides low stand-off (turn-on) voltages with significant reductions while maintaining good claming characteristics and high surge caability. They feature a true oerating voltage of. volts. Each I/O in air features a low caacitance steering diode bridge that is designed to route harmful surge current into the internal low voltage TS diode. Each data air is rated to withstand Watts of surge ower (8/us imulse waveform). When laced on the PHY side of the magnetics, it can be used to meet the requirements of Telcordia GR-89, K., K., and other high energy surge standards. The Rlam7NQ is designed with a flow through in configuration for easy layout. In a GbE alication, TX+ and TX- lines would enter at ins,,, and and exit at ins, 9, 7, and resectively. The traces should be unbroken and run under the device as shown. Pins and 8 are electrically connected to the three center ground tabs. In a tyical Ethernet alication, these ins as well as the tabs should be left floating (i.e. not connected to ground). Pin onfiguration Tx+ In Tx- In Tx+ In Tx- In Layout Examle Tx+ Out Tx- Out Tx+ Out Tx- Out Semtech or.

6 Rlam7NQ Alications Information Gigabit Ethernet Protection Solutions Ethernet systems with connections external to the building are subject to high-level transient threats. This tye of equiment may even be required to meet the surge iunity requirements of Telcordia GR- 89. Reliable rotection of the Ethernet transceiver requires a device that can absorb the exected transient energy, clam the incoming surge to a safe level, and yet remain transarent to the system under normal oeration. The Rlam7NQ has been designed to meet these demanding requirements. Transient Protection When designing Ethernet rotection, the entire system must be considered. An Ethernet ort includes interface magnetics in the form of transformers and coon mode chokes. Transformers and chokes can be discrete comonents, but integrated solutions that include the RJ- connector, resistors, caacitors, and rotection are also available. In either case, the transformer will rovide a high level of coon mode isolation to external voltages, but no rotection for metallic (line-to-line) surges. During a metallic transient event, current will flow into one line, through the transformer and back to the source. As the current flows, it charges the windings of the transformer on the line side. Once the surge is removed, the windings on the line side will sto charging and will transfer its stored energy to the I side where the PHY I is located. The magnitude and duration of the surge is attenuated by the inductance of the magnetics. The amount of attenuation will vary by vendor and configuration of the magnetics. It is this transferred energy that must be clamed by the rotection circuitry. A tyical rotection scheme which utilizes the Rlam7NQ is shown in Figure. One device is laced across two line airs and is located on the PHY side of the transformer as close to the magnetics as ossible. This is done to minimize arasitic inductance and imrove claming erformance. In this design, the isolation voltage of the transformer is relied uon to suress coon mode lightning surges. High voltage caacitors and resistors are coonly utilized from the center ta to ground to aid in transient rotection. Metallic surges will be transferred in some form to the PHY side and clamed by the Rlam7NQ. The Rlam7NQ will turn on when the voltage across it exceeds the unch-through voltage of the device. Low voltage turn on is imortant since many PHY chis have integrated ESD rotection structures. These structures are for rotection of the device during manufacture and are not designed to handle large amounts of energy. Should they turn on before the external rotection, they can be damaged resulting in failure of the PHY chi. Rlam7NQ TP+ RJ- onnector TP- 7 8 Rlam7NQ TP+ TP- TP+ GbE Ethernet PHY TP- TP+ TP- Figure - GbE Protection to Lightning, ESD, and DE Semtech or.

7 Rlam7NQ Outline Drawing - SLPN PIN INDIATOR (LASER MARK) aaa A A X b D/ D A B E A SEATING PLANE DIMENSIONS DIM MILLIMETERS MIN NOM MAX A A A.... (.).. b... b... D.9.. E.9.. e. BS e. BS e.9 BS L... L.9.. N aaa bbb.8. X L L / LxN E/ e e N bxn bbb A B e NOTES:. ONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES). Land Pattern - SLPN P P X () P X. Y G Y Z DIMENSIONS DIM MILLIMETERS (.98) G. P. P. P.9 X. X. Y.8 Y. Z. NOTES:. ONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES).. THIS LAND PATTERN IS FOR REFERENE PURPOSES ONLY. ONSULT YOUR MANUFATURING GROUP TO ENSURE YOUR OMPANY'S MANUFATURING GUIDELINES ARE MET. Semtech or. 7

8 Rlam7NQ Marking 7N Ordering Information Part Number Rlam7NQ.TT Working Qty er Reel Reel Size. olts, 7 Inch Raillam and Rlam are trademarks of Semtech ororation hange = Date ode Tae and Reel Secification 7N 7N 7N Pin Location (Towards Srocket Holes) User Direction of feed A B K. +/-.. +/-..9 +/-. Tae Width B, (Max) D D E F K (MAX) P P P T(MAX) W ). ±..7±..±...±..±..± ontact Information Semtech or. Semtech ororation Protection Products Division Flynn Rd., amarillo, A 9 Phone: (8)98- FAX (8)98-8 8