Schottky Rectifier, 3.0 A
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1 VS-30BQ060-M3 Schottky Rectifier, 3.0 A Cathode Anode SMC PRODUCT SUMMARY Package SMC I F(AV) 3.0 A V R 60 V V F at I F 0.52 V I RM 20 ma at 125 C T J max. 150 C Diode variation Single die E AS 5.0 mj FEATURES Low forward voltage drop Guard ring for enhanced ruggedness and long term reliability Halogen-free according to IEC definition Small foot print, surface mountable High frequency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Compliant to RoHS directive 2002/95/EC DESCRIPTION The VS-30BQ060-M3 surface mount Schottky rectifier has been designed for applications requiring low forward drop and small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I F(AV) Rectangular waveform 3.0 A V RRM 60 V I FSM t p = 5 μs sine 1200 A V F 3.0 Apk, T J = 125 C 0.52 V T J Range - 55 to 150 C VOLTAGE RATINGS PARAMETER SYMBOL VS-30BQ060-M3 UNITS Maximum DC reverse voltage V R Maximum working peak reverse voltage V RWM 60 V ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 50 % duty cycle at T L = 123 C, rectangular waveform 3.0 Maximum average forward current I F(AV) 50 % duty cycle at T L = 113 C, rectangular waveform 4.0 Maximum peak one cycle A 5 μs sine or 3 μs rect. pulse Following any rated 1200 non-repetitive surge current I FSM load condition and with at T C = 25 C ms sine or 6 ms rect. pulse rated V RRM applied 130 Non-repetitive avalanche energy E AS, I AS = 1.0 A, L = mh 5.0 mj Current decaying linearly to zero in 1 μs Repetitive avalanche current I AR 1.0 A Frequency limited by T J maximum V A = 1.5 x V R typical Document Number: For technical questions within your region, please contact one of the following: Revision: 13-Sep- [email protected], [email protected], [email protected] 1
2 VS-30BQ060-M3 Schottky Rectifier, 3.0 A ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum forward voltage drop V (1) FM 3 A A A 0.52 T J = 125 C 6 A 0.66 V 0.5 Maximum reverse leakage current I RM V R = Rated V R T J = 125 C 20 ma Maximum junction capacitance C T V R = 5 V DC (test signal range khz to1 MHz), 25 C 180 pf Typical series inductance L S Measured lead to lead 5 mm from package body 3.0 nh Maximum voltage rate of change dv/dt Rated V R 000 V/μs Note (1) Pulse width = 300 μs, duty cycle = 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction temperature range T (1) J - 55 to 150 C Maximum storage temperature range Maximum thermal resistance, junction to lead Maximum thermal resistance, junction to ambient Notes dp (1) tot < thermal runaway condition for a diode on its own heatsink dt J R thja (2) Mounted 1" square PCB T Stg R thjl (2) DC operation R thja 46 Approximate weight 0.24 g oz. Marking device Case style SMC (similar to DO-214AB) 3H 12 C/W For technical questions within your region, please contact one of the following: Document Number: [email protected], [email protected], [email protected] Revision: 13-Sep-
3 Schottky Rectifier, 3.0 A VS-30BQ060-M3 I F - Instantaneous Forward Current (A) T J = 150 C T J = 125 C V FM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage (Per Leg) I R - Reverse Current (ma) T J = 150 C T J = 125 C T J = C T J = 75 C T J = 50 C V R - Reverse Voltage (V) 0 C T - Junction Capacitance (pf) V R - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg) Z thjc - Thermal Impedance ( C/W) Single pulse thermal resistance) D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = t 1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance Z thjc Characteristics (Per Leg) P DM Notes: 1. Duty factor D = t 1 /t 2 2. Peak T J = P DM x Z thjc + T C t 1 t 2 Document Number: For technical questions within your region, please contact one of the following: Revision: 13-Sep- [email protected], [email protected], [email protected] 3
4 VS-30BQ060-M3 Schottky Rectifier, 3.0 A Allowable Lead Temperature ( C) % Square wave (D = 0.50) See note (1) DC Average Power Loss (W) D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 DC RMS limit I F(AV) - Average Forward Current (A) I F(AV) - Average Power Current (A) Fig. 5 - Maximum Average Forward Current vs. Allowable Lead Temperature Fig. 6 - Maximum Average Forward Dissipation vs. Average Forward Current I FSM - Non-Repetitive Surge Current (A) 0 At any rated load condition and with rated V RRM applied following surge 0 T p - Square Wave Pulse Duration (µs) 000 Fig. 7 - Maximum Peak Surge Forward Current vs. Pulse Duration Note (1) Formula used: T C = T J - (Pd + Pd REV ) x R thjc ; Pd = Forward power loss = I F(AV) x V FM at (I F(AV) /D) (see fig. 6); Pd REV = Inverse power loss = V R1 x I R (1 - D); I R at V R1 = 80 % rated V R For technical questions within your region, please contact one of the following: Document Number: [email protected], [email protected], [email protected] Revision: 13-Sep-
5 Schottky Rectifier, 3.0 A VS-30BQ060-M3 ORDERING INFORMATION TABLE Device code VS- 30 B Q 060 -M product suffix 2 - Current rating 3 - B = SMC 4 - Q = Schottky Q series 5 - Voltage rating (060 = 60 V) 6 - Environmental digit: -M3 = Halogen-free, RoHS compliant and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N PREFERRED PACKAGE CODE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-30BQ060-M3/9AT 9AT " diameter plastic tape and reel Dimensions Part marking information Packaging information LINKS TO RELATED DOCUMENTS Document Number: For technical questions within your region, please contact one of the following: Revision: 13-Sep- [email protected], [email protected], [email protected] 5
6 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Revision: 13-Jun-16 1 Document Number: 90
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Optocoupler, Photodarlington Output, i179042 DESCRIPTION A1 C 2 A3 C4 8 C 7E 6C 5E The ILD233T is a high current transfer ratio (CTR) optocoupler. It has a gallium arsenide infrared LED emitter and silicon
Ultrabright White LED, Ø 3 mm
Ultrabright White LED, Ø 3 mm DESCRIPTION The VLHW41 series is a clear, untinted 3 mm LED for high end applications where supreme luminous intensity is required. These lamps utilize the highly developed
Aluminum Electrolytic Capacitors Radial Miniature, Low Impedance, High Vibration Capability
Aluminum Electrolytic Capacitors Radial Miniature, Low Impedance, High Vibration Capability 048 RML 48 RUS lower longer life 36 RVI miniaturize 50 RMI high vibration FEATURES Very long useful life: 7000
N-Channel 40-V (D-S) 175 C MOSFET
N-Channel 4-V (D-S) 75 C MOSFET SUP/SUB85N4-4 PRODUCT SUMMARY V (BR)DSS (V) r DS(on) ( ) (A) 4.4 @ V GS = V 85 a TO-22AB D TO-263 G DRAIN connected to TAB G D S Top View Ordering Information SUP85N4-4
SMD Aluminum Solid Capacitors with Conductive Polymer
SMD Aluminum Solid Capacitors with Conductive Polymer FEATURES New OS-CON series provides improved characteristics with up to 25 C temperature capability and 35 V maximum voltage rating in a SMD package
N-Channel 20-V (D-S) 175 C MOSFET
N-Channel -V (D-S) 75 C MOSFET SUD7N-4P PRODUCT SUMMARY V DS (V) r DS(on) ( ) (A) a.37 @ V GS = V 37.6 @ V GS = 4.5 V 9 TO-5 D FEATURES TrenchFET Power MOSFET 75 C Junction Temperature PWM Optimized for
Photovoltaic MOSFET Driver with Integrated Fast Turn-Off, Solid-State Relay
Photovoltaic MOSFET Driver with Integrated Fast Turn-Off, Solid-State Relay i7966_6 Turn Off FEATURES Open circuit voltage at I F = ma, 8. V typical Short circuit current at I F = ma, 5 μa typical Isolation
PMEG1020EA. 1. Product profile. 2 A ultra low V F MEGA Schottky barrier rectifier. 1.1 General description. 1.2 Features. 1.
Rev. 04 30 December 2008 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for
N-Channel 100 V (D-S) MOSFET
Si4DS N-Channel V (D-S) MOSFET MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.).4 at V GS = V..67 at V GS = 6 V..9 nc.78 at V GS = 4.5 V.7 FEATURES TrenchFET Power MOSFET % R g Tested
PMEG3005EB; PMEG3005EL
Rev. 0 29 November 2006 Product data sheet. Product profile. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an integrated guard ring for stress
Knob Potentiometer with Switch
Knob Potentiometer with Switch The is a revolutionary concept in panel mounted potentiometers. This unique design consists of a knob driving and incorporating a cermet potentiometer. Only the mounting
Automotive P-Channel 60 V (D-S) 175 C MOSFET
Automotive P-Channel 6 V (D-S) 75 C MOSFET SQ36AEES PRODUCT SUMMARY V DS (V) -6 R DS(on) () at V GS = - V 7 R DS(on) () at V GS = -4.5 V.3 I D (A) -.9 Configuration Single D 3 SOT-3 (TO-36) G Top View
Solid Tantalum Surface Mount Capacitors TANTAMOUNT, Molded Case, Low ESR
Solid Tantalum Surface Mount Capacitors TANTAMOUNT, Molded Case, Low ESR Effective September 2005, new capacitor ratings will not be added to the series. All new ratings are available in the TR3 series.
Knob Potentiometer FEATURES. P16NP P16NM Panel Cutout. Thickness nut 2 mm washer 1.5 mm. Panel sealing ring 12 wrench Thread M10 x 0.75 10.2 9.
Knob Potentiometer P6, PA6 FEATURES Test according to CECC 4000 or IEC 60393- P6 - Version for professional and industrial applications (cermet) W at 40 C PA6 - Version for professional audio applications
8ETH06 8ETH06S 8ETH06-1 8ETH06FP
Bulletin PD-0746 rev. D 03/03 8ETH06 8ETH06S 8ETH06-8ETH06FP Hyperfast Rectifier Features Hyperfast Recovery Time Low Forward Voltage Drop Low Leakage Current 75 C Operating unction Temperature UL E78996
N-Channel 60-V (D-S), 175 C MOSFET
N-Channel 6-V (D-S), 75 C MOSFET SUP/SUB7N6-4 V (BR)DSS (V) r DS(on) ( ) (A) 6.4 7 a TO-22AB D TO-263 DRAIN connected to TAB G G D S Top View SUP7N6-4 G D S Top View SUB7N6-4 S N-Channel MOSFET Parameter
Pulse Proof Thick Film Chip Resistors
Pulse Proof Thick Film Chip Resistors FEATURES High pulse performance, up to kw Stability R/R 1 % for h at 70 C AEC-Q200 qualified Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
Power MOSFET FEATURES. IRFSL11N50APbF SiHFSL11N50A-E3. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 500 V Gate-Source Voltage V GS ± 30
Power MOFET IRFL11N50, ihfl11n50 PRODUCT UMMRY V D (V) 500 R D(on) ( ) V G = 10 V 0.55 Q g (Max.) (nc) 51 Q gs (nc) 12 Q gd (nc) 23 Configuration ingle I 2 PK (TO262) G D FETURE Dynamic dv/dt Rating Repetitive
HEXFRED Ultrafast Soft Recovery Diode, 25 A
VS-HF5PB6PbF, VS-HF5PB6-N3 HEXFRED Ultrafast Soft Recovery Diode, 5 FETURES Ultrafast and ultrasoft recovery TO-47 modified athode to base PRODUT SUMMRY Package TO-47 modified ( pins) I F(V) 5 V R 6 V
High-speed switching diodes. Type number Package Configuration Package NXP JEITA JEDEC
Rev. 8 18 November 2010 Product data sheet 1. Product profile 1.1 General description, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package
Metal Film Resistors, Pulse Withstanding Protective
End of Life - August 213 www.vishay.com Metal Film Resistors, Pulse Withstanding Protective STANDARD ELECTRICAL SPECIFICATIONS GLOBAL HISTORICAL POWER RATING P 7 C W FEATURES Special design provides lightning
BAT54 series SOT23 Schottky barrier diodes Rev. 5 5 October 2012 Product data sheet 1. Product profile 1.1 General description
SOT2 Rev. 5 5 October 2012 Product data sheet 1. Product profile 1.1 General description Planar with an integrated guard ring for stress protection, encapsulated in a small SOT2 (TO-26AB) Surface-Mounted
Optocoupler, Phototransistor Output, High Reliability, 5300 V RMS, Low Input Current
Optocoupler, Phototransistor Output, High Reliability, 53 V RMS, Low Input Current FEATURES A C 1 2 4 3 C E Operating temperature from -55 C to +11 C Good CTR linearity depending on forward current Isolation
Electrical Double Layer Energy Storage Capacitors Power and Energy Versions
Electrical Double Layer Energy Storage Capacitors Power and Energy Versions FEATURES Polarized energy storage capacitor with high capacity and energy density Energy version with high stability available
IR Receiver Module for Light Barrier Systems
Not for New Design - Alternative Available: New TSSP4038 (#82458) www.vishay.com IR Receiver Module for Light Barrier Systems TSOP4038 2 3 MECHANICAL DATA Pinning: = OUT, 2 = GND., 3 = V S 6672 FEATURES
Aluminum Capacitors Solid Axial
SAL-A End of Life. Last Available Purchase Date is -December- Radial higher CV/volume Fig. QUICK REFERENCE DATA DESCRIPTION VALUE Maximum case size (Ø D x L in mm) 6.7 x. to.9 x. Rated capacitance range
Surface Mount TRANSZORB Transient Voltage Suppressors
Surface Mount TRANSZORB Transient Voltage Suppressors DO-214AA (SMB J-Bend) PRIMARY CHARACTERISTICS V BR (bi-directional) 6.4 V to 231 V V BR (uni-directional) 6.4 V to 231 V V WM 5.0 V to 188 V P PPM
Medium power Schottky barrier single diode
Rev. 03 17 October 2008 Product data sheet 1. Product profile 1.1 General description Planar medium power Schottky barrier single diode with an integrated guard ring for stress protection, encapsulated
Load Switch with Level-Shift
Load Switch with Level-Shift PRODUCT SUMMARY V IN (V DS2 ) (V) R DS(on) (Ω) I D (A).5 to 2 DESCRIPTION.54 at V IN = 4.5 V 3.9.77 at V IN = 2.5 V 3.2.6 at V IN =.8 V 2.8.65 at V IN =.5 V 2.2 The includes
