Applications. Number of total pixels. Number of active pixels

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1 IMAGE SENSOR CCD area image sensor S7/S7 series Back-thinned FFT-CCD S7/S7 series is a family of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, S7/S7 series can be used as a linear image sensor having a long aperture in the direction of the device length. This makes S7/S7 series ideally suited for use in spectrophotometry. The binning operation offers significant improvement in S/N and signal processing speed compared with conventional methods by which signals are digitally added by an external circuit. S7/S7 series also features low noise and low dark signal (MPP mode operation). This enables low-light-level detection and long integration time, thus achieving a wide dynamic range. S7/S7 series has an effective pixel size of 4 4 µm and is available in image areas ranging from.88 (H).9() mm (5 58 pixels) up to a large image area of (H) 6. () mm (4 5 pixels). Features l Non-cooled type: S7 series One-stage TE-cooled type: S7 series l Pixel size: 4 4 µm l Line, pixel binning l Greater than 9 % quantum efficiency at peak sensitivity wavelength l Wide spectral response range l Low readout noise l Wide dynamic range l MPP operation l High U sensitivity with good stability Selection guide Type No. Cooling Number of total pixels Applications l Fluorescence spectrometer, ICP l Raman spectrometer l Industrial inspection requiring l Semiconductor inspection l DNA sequencer l Low-light-level detection Number of active pixels Active area [mm (H) mm ()] S S S Non-cooled S S S S S S7-98 One-stage S7-6 TE-cooled S S Suitable multichannel detector head C74 C74 General ratings Parameter Specification Pixel size 4 (H) 4 () µm ertical clock phase phases Horizontal clock phase phases Output circuit One-stage MOSFET source follower Package * 4 pin ceramic DIP (refer to dimensional outlines) Window * Quartz glass *: S7-*** is filled with nitrogen gas of -6 C dew-point. *: Temporary window type (ex. S7-96N) and AR-coated sapphire window type (ex. S7-96S) are available upon request. (Temporary window is fixed by tape to protect the CCD chip and wire bonding.)

2 CCD area image sensor S7/S7 series Absolute maximum ratings (Ta=5 C) Parameter Symbol Min. Typ. Max. Unit Operating temperature * Topr C Storage temperature Tstg C OD voltage OD RD voltage RD IS voltage IS ISH voltage ISH IG voltage IG, IG IGH voltage IGH, IGH SG voltage SG OG voltage OG voltage TG voltage TG ertical clock voltage P, P Horizontal clock voltage PH, PH *: Chip temperature Operating conditions (MPP mode, Ta=5 C) Parameter Symbol Min. Typ. Max. Unit Output transistor drain voltage OD 8 Reset drain voltage RD.5.5 Output gate voltage OG 5 Substrate voltage SS - - Test point (vertical input source) IS - RD - Test point (horizontal input source) ISH - RD - Test point (vertical input gate) IG, IG -8 - Test point (horizontal input gate) IGH, IGH -8 - ertical shift register High PH, PH clock voltage Low PL, PL Horizontal shift register High PHH, PHH clock voltage Low PHL, PHL Summing gate voltage High SGH Low SGL Reset gate voltage High H Low L Transfer gate voltage High TGH Low TGL Electrical characteristics (Ta=5 C) Parameter Symbol Min. Typ. Max. Unit Signal output frequency fc -.5 MHz S7* ertical shift register S7*-97/ CP, CP capacitance S7*-98/-7 - pf S7* Horizontal shift register S7*-96/-97/-98 CPH, CPH - capacitance S7*-6/-7/ pf Summing gate capacitance CSG - - pf Reset gate capacitance C - - pf Transfer gate capacitance S7*-96/-97/ CTG - S7*-6/-7/ pf Charge transfer efficiency * 4 CTE DC output level * 5 out Output impedance * 5 Zo - 4 kω Power consumption * 5 * 6 P - 4 mw *4: Charge transfer efficiency per pixel, measured at half of the full well capacity. *5: The values depend on the load resistance. (Typical, OD=, Load resistance= kω) *6: Power consumption of the on-chip amplifier.

3 CCD area image sensor S7/S7 series Electrical and optical characteristics (Ta=5 C, unless otherwise noted) Parameter Symbol Min. Typ. Max. Unit Saturation output voltage sat - Fw Sv - Full well capacity ertical 4 - Fw Horizontal * ke - CCD node sensitivity Sv.8. - µ/e - D ark current * 8 5 C - MPP mode DS e - /pixel/s C - (tentative data) Readout noise * 9 Nr e - rm s Dynamic range * Line binning DR Area scanning Photo response non-uniformity * PRNU - ± ± % Spectral response range λ - to - nm W hite spots Point defect * Black spots Blemish - Cluster defect * Column defect * *7: The linearity is ±.5 %. *8: Dark current nearly doubles for every 5 to 7 C increase in temperature. *9: Measured with a Hamamatsu C488 digital CCD camera with a CDS circuit (sensor temperature: -4 C, operating frequency: 5 khz). *: Dynamic range (DR) = Full well/readout noise *: Measured at one-half of the saturation output (full well capacity) using a white fluorescent lamp. Photo response non-uniformity (PRNU) [%] Fixed pattern noise (peak to peak) Signal *: W hite spots Pixels whose dark current is higher than ke - after one-second integration at C. Black spots Pixels whose sensitivity is lower than one-half of the average pixel output. (Measured with uniform light producing one-half of the saturation charge) *: to 9 contiguous defective pixels *4: or more contiguous defective pixels Spectral response (without window) *5 (Typ. Ta=5 C) Spectral transmittance characteristics (Typ. Ta=5 C) 9 BACK-THINNED 9 QUANTUM EFFICIENCY (%) FRONT-SIDED (U COAT) FRONT-SIDED TRANSMITTANCE (%) QUARTZ WINDOW AR COATED SAPPHIRE WAELENGTH (nm) KMPDB58EA *5: Spectral response with quartz glass (or AR-coated sapphire glass) is decreased by the transmittance Dark current vs. temperature DARK CURRENT (e - /pixel/s) (Typ.). Window material Type No. S7/S7 series S7 series (two-stage TEcooled types, made to order) *6: Resin sealing *7: Hermetic sealing WAELENGTH (nm) KMPDBEA Window material Quartz glass * 6 (option: window-less, AR-coated sapphire glass * 7 ) AR-coated sapphire glass * 7 (option: window-less) TEMPERATURE ( C) KMPDB56EA

4 CCD area image sensor S7/S7 series Device structure THINNING 5 4 BEEL THINNING H 4 BEEL SIGNAL OUT n =58,, 5 H=5, BLANK n SIGNAL OUT 4 BLANK Timing chart INTEGRATION PERIOD (Shutter must be open) P Tpwv 6 BEEL 6 BEEL ERTICAL BINNING PERIOD (Shutter must be closed) KMPDC6EB READOUT PERIOD (Shutter must be closed) (BEEL): S7*-96/ (BEEL): S7*-97/ (BEEL): S7*-98/-8 Tovr Line bininng P, TG PH Tpwh, Tpws : S7*-96/-97/-98 44: S7*-6/-7/-8 PH, SG Tpwr OS D D S..S5 D9 D..D, S..S4, D..D8 D: S7*-96/-97/-98 : S7*-6/-7/-8 KMPDC7EB * 8 Parameter Symbol Remark Min. Typ. Max. Unit P, P, TG Pulse width Tpwv 6 * µs * 8 Rise and fall time Tprv, Tpfv - - ns Pulse width Tpwh 5 - ns PH, PH Rise and fall time Tprh, Tpfh - - ns Duty ratio % Pulse width Tpws 5 - ns SG Rise and fall time Tprs, Tpfs ns Duty ratio % Pulse width Tpwr - - ns - Rise and fall time Tprr, Tpfr ns TG PH Overlap time Tovr µs *8: The clock pulses should be overlapped at 5 % of clock pulse amplitude. *9: In case of S7/S7-98, -7. 4

5 CCD area image sensor S7/S7 series Area scanning: large full well mode INTEGRATION PERIOD (Shutter must be open) P Tpwv READOUT PERIOD (Shutter must be closed) (BEEL): S7 *-96/ (BEEL): S7 *-97/ (BEEL): S7 *-98/-8 P, TG PH PH, SG OS P, TG PH Tovr Tpwh, Tpws ENLAED IEW PH, SG OS Tpwr D D D D4 S..S5 D8 D9 D: S7 *-96/-97/-98 D5..D, S..S4, D..D7 : S7 *-6/-7/-8 KMPDC7EA * Parameter Symbol Remark Min. Typ. Max. Unit P, P, TG Pulse width Tpwv 6 * 8 - µs * Rise and fall time Tprv, Tpfv - - ns Pulse width Tpwh 5 - ns PH, PH Rise and fall time Tprh, Tpfh - - ns Duty ratio % Pulse width Tpws 5 - ns SG Rise and fall time Tprs, Tpfs ns Duty ratio % Pulse width Tpwr - - ns - Rise and fall time Tprr, Tpfr ns TG - PH Overlap time Tovr µs *: The clock pulses should be overlapped at 5 % of clock pulse amplitude. *: In case of S7/S7-98, -7. 5

6 CCD area image sensor S7/S7 series Dimensional outlines (unit: mm) S7-96/-97/-98 S7-6/-7/-8 WINDOW 6. * ACTIE AREA.9 WINDOW 8.6 * ACTIE AREA 4.58 st PIN INDICATION PAD PHOTOSENSITIE SURFACE WINDOW 6. * ACTIE AREA.9 8. * a ±..9 ±. 8. * a.4 ±..9 ±. 8. * a.4 ±..9 ±. 4. ±.4.54 ±..54 ±. 44. ±.44 st PIN INDICATION PAD PHOTOSENSITIE SURFACE. S7-96: a=.9 S7-97: a=.98 S7-98: a=6..5 ±.5.75 ± ± ±.49 (4 ).5 ±.5 KMPDA46EC. S7-6: a=.9 S7-7: a=.98 S7-8: a=6..5 ±.5.75 ± ± ±.49 (4 ).5 ±.5 KMPDA47ED S7-96/-97/-98 S7-6/-7/-8 WINDOW 8.6 * ACTIE AREA * a ±..9 ±..54 ±. 4. ± ±. 44. ± ±. 6. ±. st PIN INDICATION PAD PHOTOSENSITIE SURFACE st PIN INDICATION PAD PHOTOSENSITIE SURFACE TE-COOLER TE-COOLER. S7-96: a=.9 S7-97: a=.98 S7-98: a= ± ±.6 7. ± ±.68 (4 ).5 ±.5. S7-6: a=.9 S7-7: a=.98 S7-8: a= ± ±.6 7. ±.6 (4 ).5 ± ±.68 KMPDA48EC KMPDA49ED *: Size of window that guarantees the transmittance in the "Spectral transmittance characteristics" graph 6

7 CCD area image sensor S7/S7 series Pin connections Pin S7 series S7 series Remark No. Symbol Function Symbol Function (standard operation) RD Reset drain RD Reset drain + OS Output transistor source OS Output transistor source RL= k to kω OD Output transistor drain OD Output transistor drain + 4 OG Output gate OG Output gate + 5 SG Summing gate SG Summing gate Same pulse as PH PH CCD horizontal register clock- PH CCD horizontal register clock- 9 PH CCD horizontal register clock- PH CCD horizontal register clock- IGH Test point (horizontal input gate-) IGH Test point (horizontal input gate-) IGH Test point (horizontal input gate-) IGH Test point (horizontal input gate-) ISH Test point (horizontal input source) ISH Test point (horizontal input source) Connect to RD TG * Transfer gate TG * Transfer gate Same pulse as P 4 P CCD vertical register clock- P CCD vertical register clock- 5 P CCD vertical register clock- P CCD vertical register clock- 6 - Th Thermistor 7 - Th Thermistor 8 - P- TE-cooler- 9 - P+ TE-cooler+ SS Substrate (GND) SS Substrate (GND) GND IS Test point (vertical input source) IS Test point (vertical input source) Connect to RD IG Test point (vertical input gate-) IG Test point (vertical input gate-) IG Test point (vertical input gate-) IG Test point (vertical input gate-) 4 Reset gate Reset gate *: Isolation gate between vertical register and horizontal register. In standard operation, TG should be applied the same pulse as P. S7-96/-97/-98 S7-6/-7/ (Typ. Ta=5 C) OLTAGE vs. CURRENT CCD TEMPERATURE vs. CURRENT 7 6 (Typ. Ta=5 C) OLTAGE vs. CURRENT CCD TEMPERATURE vs. CURRENT OLTAGE () CCD TEMPERATURE ( C) OLTAGE () CCD TEMPERATURE ( C) CURRENT (A) KMPDB78EA CURRENT (A) KMPDB79EA Specifications of built-in TE-cooler (Typ. Reference data in vacuum condition) Parameter Symbol Condition S7-96/-97/-98 S7-6/-7/-8 Unit Internal resistance Rint Ta=5 C.5. Ω Maximum current * 4 Imax Tc * 5 =Th * 6 =5 C.5. A Maximum voltage max Tc * 5 =Th * 6 =5 C.8.6 Maximum heat absorption * 7 Qmax.4 5. W Maximum temperature of heat radiating side C *4: Maximum current Imax: If the current greater than this value flows into the thermoelectric cooler, the heat absorption begins to decrease due to the Joule heat. It should be noted that this value is not the damage threshold value. To protect the thermoelectric cooler and maintain stable operation, the supply current should be less than 6 % of this maximum current. *5: Temperature of the cooling side of thermoelectric cooler. *6: Temperature of the heat radiating side of thermoelectric cooler. *7: Maximum heat absorption Qmax. This is a theoretical heat absorption level that offsets the temperature difference in the thermoelectric cooler when the maximum current is supplied to the unit. 7

8 CCD area image sensor S7/S7 series Specifications of built-in temperature sensor A chip thermistor is built in the same package with a CCD chip, and the CCD chip temperature can be monitored with it. A relation between the thermistor resistance and absolute temperature is expressed by the following equation. R = R expb ( / T - / T) where R is the resistance at absolute temperature T (K) R is the resistance at absolute temperature T (K) B is so-called the B constant (K) The characteristics of the thermistor used are as follows. R (98K) = kω B (98K / K) = 45 K RESISTANCE MΩ kω kω TEMPERATURE (K) KMPDBEB 8 Precaution for use (Electrostatic countermeasures) Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist band with an earth ring, in order to prevent electrostatic damage due to electrical charges from friction. Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge. Provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to discharge. Ground the tools used to handle these sensors, such as tweezers and soldering irons. It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the amount of damage that occurs. Element cooling/heating temperature incline rate When cooling the CCD by an externally attached cooler, set the cooler operation so that the temperature gradient (rate of temperature change) for cooling or allowing the CCD to warm back is less than 5 K/minute. Features l C74: for S7 series C74: for S7 series l Area scanning or full line-binnng operation l Readout frequency: 5 khz l Readout noise: e - rms l T=5 C ( T changes by cooling method.) Input Symbol alue Supply voltage D A+ A- A D p F +5 dc, ma +5 dc, + ma -5 dc, - ma +4 dc, ma +5 dc, ma (C74) +5 dc,.5 A (C74) + dc, ma (C74) Master start φms HCMOS logic compatible Master clock φmc HCMOS logic compatible, MHz Multichannel detector heads C74, C74 Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 6 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 6- Ichino-cho, Hamamatsu City, Japan, Telephone: (8) 5-44-, Fax: (8) , U.S.A.: Hamamatsu Corporation: 6 Foothill Road, P.O.Box 69, Bridgewater, N.J , U.S.A., Telephone: () , Fax: () Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr., D-8 Herrsching am Ammersee, Germany, Telephone: (49) 85-75, Fax: (49) France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 988 Massy Cedex, France, Telephone: -() , Fax: -() United Kingdom: Hamamatsu Photonics UK Limited: Howard Court, Tewin Road, Welwyn Garden City, Hertfordshire AL7 BW, United Kingdom, Telephone: (44) , Fax: (44) North Europe: Hamamatsu Photonics Norden AB: Smidesvägen, SE-7 4 Solna, Sweden, Telephone: (46) , Fax: (46) Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, /E, Arese, (Milano), Italy, Telephone: (9) , Fax: (9) Cat. No. KMPDE Jan. 6 DN