80 V Forward current I F 100 ma Total power dissipation T s 133 C. P tot

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1 Silicon PIN Diode Optimized for antenna switches in hand held applications Very low capacitance at zero volts reverse bias at frequencies above GHz (typ..9 pf) Low forward resistance I F = ma) Very low signal distortion Pbfree (RoHS compliant) package BAR89LRH Type Package Configuration L S (nh) Marking BAR89LRH TSLP7 single, leadless.4 R Maximum Ratings at T A = 5 C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage V R 8 V Forward current I F ma Total power dissipation T s 33 C P tot 5 mw Junction temperature T j 5 C Operating temperature range T op Storage temperature T stg Thermal Resistance Parameter Symbol Value Unit Junction soldering point ) R thjs 65 K/W For calculation of R thja please refer to Application Note AN77 (Thermal Resistance Calculation) 88

2 Electrical Characteristics at T A = 5 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Breakdown voltage V (BR) 8 V I (BR) = 5 µa Reverse current V R = 6 V I R 5 na Forward voltage I F = ma I F = ma V F V

3 Electrical Characteristics at T A = 5 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics Diode capacitance V R = V, f = MHz V R = V, f = MHz V R = V, f = GHz V R = V, f =.8 GHz Reverse parallel resistance V R = V, f = MHz V R = V, f = GHz V R = V, f =.8 GHz Forward resistance I F = ma, f = MHz I F = 5 ma, f = MHz I F = ma, f = MHz Charge carrier life time I F = ma, I R = 6 ma, measured at I R = 3 ma, R L = Ω C T R P r f pf kω Ω τ rr 8 ns Iregion width W I 9 µm Insertion loss ) I F = ma, f =.8 GHz I F = 5 ma, f =.8 GHz I F = ma, f =.8 GHz Isolation ) V R = V, f =.9 GHz V R = V, f =.8 GHz V R = V, f =.45 GHz BAR89LRH in series configuration, Z = 5Ω I L I SO db

4 Diode capacitance C T = ƒ (V R ) f = Parameter Reverse parallel resistance R P = ƒ(v R ) f = Parameter.5 pf 3 KOhm.4 CT.35.3 MHz MHz GHz.8 GHz Rp.5. MHz GHz.8 GHz V V R V V R Forward resistance r f = ƒ (I F ) f = MHz Forward current I F = ƒ (V F ) T A = Parameter 3 Ohm A rf IF C +5 C +85 C +5 C ma 3 I F V. VF 4 88

5 Forward current I F = ƒ (T S ) BAR89LRH Permissible Puls Load R thjs = ƒ (t p ) BAR89LRH ma ma 9 IF RthJS D = C 5 T S C t p Permissible Pulse Load I Fmax / I FDC = ƒ (t p ) BAR89LRH Insertion loss I L = S = ƒ(f) I F = Parameter BAR89LRH in series configuration, Z = 5Ω db ma. IF D = S ma 5mA ma C t p GHz 6 f 5 88

6 Isolation I SO = S = ƒ(f) V R = Parameter BAR89LRH in series configuration, Z = 5Ω db S 5 V V V GHz 6 f 6 88

7 Package TSLP7 BAR89 Package Outline Top view Bottom view.5 MAX..6 ±.5 Cathode marking.65 ±.5 ) Dimension applies to plated terminal ).5 ±.35 ).5 ±.35 ±.5 Foot Print For board assembly information please refer to Infineon website "Packages" Copper Solder mask Stencil apertures Marking Layout (Example) BAR9LRH Type code Cathode marking Laser marking Standard Packing Reel ø8 mm = 5. Pieces/Reel Reel ø33 mm = 5. Pieces/Reel (optional) Cathode marking

8 Edition 96 Published by Infineon Technologies AG 876 Munich, Germany 9 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (< Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in lifesupport devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 8 88