Advantages of SiC MOSFETs in Power Applications Power Forum, Bologna September 18 th, 2014 Pascal Ducluzeau Product Marketing Director Microsemi Power Module Products pducluzeau@microsemi.com
Topics Advantages of SiC in Power Applications SiC Power Module Advantages Microsemi SiC MOSFETs Benchmark Microsemi SiC Program 2014 Microsemi Corporation 2
Advantages of SiC in Power Applications 2014 Microsemi Corporation
SiC Main Characteristics vs. Si Characteristics SiC vs. Si Results Benefits Breakdown field (MV/cm) Electron sat. velocity (cm/s) Bandgap energy (ev) Thermal conductivity (W/cm.K) Positive Temperature coefficient 10x Higher Lower On-Resistance Higher efficiency 2x Higher Faster switching Size reduction 3x Higher Higher Junction temperature Improved cooling 3x Higher Higher power density Higher current capabilities - Self regulation Easy paralleling SiC is the perfect technology to address today and future applications Lower Power Losses Higher frequency cap. Higher junction temp. Easier cooling Downsized system Higher Reliability 2014 Microsemi Corporation 4
Markets and advantages of SiC Markets Applications High Temp. High Freq. Small, Light System Low Loss, Efficiency Aerospace Actuation Air Conditioning Power Distribution X X X X Defense Oil drilling Motor Drives Aux. Power Supplies X X X X Transportation Power Train Fast Battery Charger DC/DC Converters KERS X X X X Solar Energy PV inverter X X X Wind turbine Inverter X X Industrial Medical Motor drives Welding UPS, SMPS Induction Heating MRI power supply X-Ray power supply X X X X X X 2014 Microsemi Corporation 5
Transistor Power Loss Comparison 180 (30kHz, 50% duty cycle, I LOAD =15A, V OFF =800V, T CASE =80 C, T J =125 C) TFS=TRENCH & FIELD STOP PT = PUNCH-THROUGH NPT = NON-PUNCH-THROUGH 160 140 120 Turn-off Losses Turn-on Losses Conduction Losses Power Loss [W] 100 80 60 50% lower losses than fastest IGBT type 40 T J =150 C 20 0 TFS IGBT PT IGBT NPT IGBT SiC MOSFET 2014 Microsemi Corporation 6
SiC in Electric Vehicles Case Study #1 Toyota approximates that 20% of HV total electrical power loss occurs in the power semiconductors One key to improving fuel efficiency is to increase power semiconductor efficiency Compared to silicon, SiC MOSFETs operate with 1/10 the power loss and switching frequency can be increased by a factor of ten. Aim to leverage the benefits of high frequency and high efficiency to enable PCU downsizing of 80% Over 5% fuel efficiency improvement confirmed with SiC MOSFETs GOAL: Toyota is aiming for a 10% improvement in fuel efficiency with SiC MOSFETs Source: Toyota-Denso presentation, Automotive Engineering Exposition in Japan May 2014 2014 Microsemi Corporation 7
SiC in Electric Vehicles Case Study #2 Total Inverter & Battery Cost Reduction with SiC 100% 5% TOTAL COST REDUCTION with SiC-MOSFET 6,5% 95% 1,4% 6,0% % Original Cost 90% 85% 4,3% 2,2% 1,0% 2,2% 80% 86% 350V Battery 225kW 3-Phase Inverter - 84 Si PT IGBT solution (IXGX72N60B3H1-600V/72A) - 60 SiC MOSFET solution (30mΩ, 700V) 6,2% 80% 75% Si IGBT SiC MOSFET Battery Semiconductors Magnetics Passives Other 2014 Microsemi Corporation 8
SiC in Electric Vehicles Case Study #2 Semiconductor % Efficiency Loss versus Load 10% Semiconductor Loss [% Efficiency] 9% 8% 7% 6% 5% 4% 3% 2% 7% improvement 55-70 mph 88-112km/h 350V Battery 225kW 3-Phase Inverter - 84 Si PT IGBT solution (IXGX72N60B3H1-600V/72A) - 60 SiC MOSFET solution (30mΩ, 700V) Si IGBT SiC MOSFET 1% on level ground the EV inverter is generating only about 6% of its rated capacity at 55mph 0% 0% 10% 20% 30% 40% 50% 60% 70% 80% 90% 100% Inverter Load [%] 2014 Microsemi Corporation 9
SiC in Electric Vehicles Case Study #2 SiC MOSFET versus PT IGBT Summary 5% reduction in Inverter & Battery cost using SiC MOSFETs 7% improvement in fuel efficiency using SiC MOSFETs Lower switching losses Higher switching frequency Higher temperature capable Better current sharing when paralleled No need for anti-parallel diode 350V Battery 225kW 3-Phase Inverter - 84 Si PT IGBT solution (IXGX72N60B3H1-600V/72A) - 60 SiC MOSFET solution (30mΩ, 700V) 2014 Microsemi Corporation 10
SiC Power Modules Advantages 2014 Microsemi Corporation
SiC-MOSFET and packaging Whatever the selected SiC-MOS device, packaging choice will help to emphasize the best of SiC performance for the application. High stray inductances will lead to higher oscillation and voltage spikes Not efficient paralleling will compromise reliability of the system Symmetric layout will guaranty performance stability Built-in internal series gate resistor for easy paralleling Kelvin source signal for easy drive D3-62mm package 30mm height 30nH stray inductance SP6-62mm package 17mm height 15nH stray inductance SP6P - 62mm package 12mm height 5nH stray inductance 2014 Microsemi Corporation 12
SiC Module advantages vs Discrete Assembly Features Higher power density Isolated and conductive substrate Internal wiring Minimum parasitic Minimum output connections Mix & match components Whole system improvement Benefits Size and cost reduction Excellent thermal management Less external hardware Higher performance and efficiency Reduced assembly time Optimized losses Performance Reliability Size Cost SiC COST Reduced size and cost of magnetics and heatsink 2014 Microsemi Corporation 13
CTE & Thermal Management Module performance and reliability depends on assembly material choice Material CTE (ppm/k) Thermal conductivity (W/m.K) Density (g/cc) CTE (ppm/k) Thermal conductivity (W/m.K) Rthjc (K/W) Base Substrate Die CuW 6.5 190 17 AlSiC 7 170 2.9 Cu 17 390 8.9 Al 2 O 3 7 25 - AlN 5 170 - Si 3 N 4 3 60 - Si 4 136 - SiC 2.6 370 - Silicon Die (120 mm 2 ) or SiC Die (40mm2) DBC substrate Solder Joint Solder 4 136 Cu/Al 2 O 3 17/7 390/25 0.35 AlSiC/Al 2 O 3 7/7 170/25 0.385 Cu/AlN 17/5 390/170 0.28 AlSiC/AlN 7/5 170/170 0.31 AlSiC/Si 3 N 4 7/3 170/60 0.31 Dice AlSiC and Alumina offer best CTE matching Base AlN and Si3N4 on AlSiC offer higher thermal performance with good CTE matching More closely matched TCEs of materials increases module lifetime Higher thermal conductivity maximizes thermal performance Engineered materials such as AlSiC provide substantial weight reductions (up to 50%) over traditional copper material 2014 Microsemi Corporation 14
SiC Module = Higher Power Density Parameter Microsemi APTGLQ300A120G Microsemi APTMC120AM20CT1AG Comparison SiC vs Si Semiconductor type Trench4 IGBT SiC Mosfet Ratings @ Tc=80 C 300A/1200V 108A/1200V Package type SP6 108x62mm SP1 52x41mm 3x smaller Current @ 30kHz Tc=75 C, D=50%, V=600V 130A 130A - Current @ 50kHz Tc=75 C, D=50%, V=600V 60A 115A ~2.0x higher Eon+Eoff @ 100A Tj=150 C, V=600V 16.0mJ 3.4mJ 4.7x lower MORE POWER in SMALLER VOLUME SiC MOSFET Si IGBT 0 40 60 80 100 120 140 160 2014 Microsemi Corporation 15 Frequency (khz) 200 150 100 50 Operating Frequency vs Drain Current I D, Drain Current (A) V BUS =600V D=50% T J =150 C T C =75 C
Parallel diode to SiC-MOS: to Be or not to Be? Intrinsic Body diode Additional Fast Series & Parallel diode Additional Parallel diode Si-MOSFET SiC-MOSFET SiC ADVANTAGE Poor Reverse Recovery Characteristics Low Vf Blocking series diode mandatory to avoid slow body diode to conduct No advantage: Current flow would go to body diode only Good Reverse Recovery Characterisitcs. Higher Vf No Need for blocking diode Mandatory to reduce high conduction losses of body diode SiC-MOS Body diode is enough when operated at low duty cycle SiC-MOS parallel diode required if operated at high duty cycle Low SiC diode switching losses Less components count and less conduction losses Allow full SiC-MOS performance without limitation of body diode losses Parallel diode can be avoided if SiC -MOSFET is turned ON (Synchronous Rectification) 2014 Microsemi Corporation 16
SiC-MOS VSD performance vs VGS APTMC120AM20CT1AG VSD curves vs ISD at given VGS values The lower the negative gate voltage the higher the Vsd The higher the positive gate voltage the lower the Vsd To minimize the diode conduction losses the SiC-MOSFET should be turned ON with VGS = 20V 2014 Microsemi Corporation 17
SiC-MOSFET gate drive Example of Opto-driver gate driver that can be used to drive SiC Mosfet Increasing Gate voltage to 20V reduces total losses by 30% Negative gate bias further reduces losses, but the impact is smaller than for IGBTs Vgs voltage range should be within -5V to +20V to optimize total losses 2014 Microsemi Corporation 18
SiC-MOS Power module application INDUCTION HEATING 10 x 1200V 80mΩ SiC Most per switch 12 x 1200V 10A SiC schottky per switch Practical example: CUSTOMER s OBJECTIVE MODULE COUNT REDUCTION PER SYSTEM IMPROVED PERFORMANCE AND RELAIBILITY LOWER SYSTEM COST DC Voltage = 535V Sinusoidal RMS current = 136A out Water cooled heat sink - inlet temperature = 14 C DC power = 61.6kW Efficiency = 99.2% @ Fsw=217KHz ZVS 2014 Microsemi Corporation 19
SiC-MOS Power module application AUTOMOTIVE 2 x 1200V 25mΩ SiC Most per switch 2 x 1200V 20A SiC schottky per switch 9 modules size 52mm x 41mm CUSTOMER s OBJECTIVE SMALLER AND LIGHTER SYSTEM RELIABILITY PERFORMANCE Practical example in race car application 3-phase inverter 3 modules per phase 100KW DC voltage = 900V >220A RMS @ Tc=75 C Fsw >100kHz 2014 Microsemi Corporation 20
Microsemi SiC MOSFETs Benchmark 2014 Microsemi Corporation
Best in Class RDS(ON) vs. Temperature Normalized RDSON (to 25 C) 2.4 2.3 2.2 2.1 2 1.9 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1 Competitor 2 80mΩ Competitor 1 80mΩ 25 50 75 100 125 150 175 200 Tj [ C] Microsemi APT50SM120B 50mΩ Microsemi APT40SM120B 80mΩ 2014 Microsemi Corporation 22
Best in Class Built in Gate Resistance R G (Ω) 10 9 8 7 6 5 4 3 2 1 0 Competition High R G Microsemi Low R G 0 1 2 3 4 5 Oscillation-free with minimal external R G APT50SM120B 50mΩ APT40SM120B 80mΩ Competitor 2 Competitor 1 Ultra Low Gate Resistance Minimized Switching Energy Loss & Allow Higher Switching Frequency Microsemi 2014 Microsemi Corporation 23
Switching Energy Benchmark Total Switching Energy [mj] 6 5 4 3 2 1 Microsemi 80mΩ Microsemi 50mΩ Competitor 2 80mΩ 0 0 10 20 30 40 50 60 70 80 Current [A] >30% less switching loss translates to cooler dynamic operations and capability for higher switching frequencies 2014 Microsemi Corporation 24
Switching Energy Benchmark 1.E+06 fmax [Hz] 1.E+05 1.E+04 Microsemi APT50SM120B 50mΩ Microsemi APT40SM120B 80mΩ Competitor 2 80mΩ 1.E+03 Tj=150 C; Tc=75 C 0 10 20 30 40 50 60 ID [A] Dynamic performance breakaway enablers: Superior EON (t on ) due to high gm, ultra low RG Superior EOFF due to extremely low RG (yet oscillation free with very low external RG) Low RDSON at high temperatures extends switching frequency and current capability 2014 Microsemi Corporation 25
Superior Short Circuit Withstand Microsemi APT40SM120B 80mΩ Competitor 1 80mΩ 8.5µs Microsemi s 80mΩ SiC MOSFET demonstrates 25% longer short circuit capability 2014 Microsemi Corporation 26
2014 Microsemi Corporation Microsemi SiC Program
Silicon Carbide (SiC) Manufacturing Microsemi SiC Wafer Fab located in Bend, Oregon USA Complete In-house process capability since 2007 Current capacity of 200 wafers/week (100mm 4 inches) 12 Issued SiC technology patents Over 1,000,000 SiC Schottky Diodes produced Experienced with SiC MOSFETs, SiC Schottky Diodes, SiC SITs (JFETs) and SiC MESFETs E220 Production Implanter Hi Temp Oxidation MESFET and MOSFET Gate Oxidation Ambios AFM Surface Roughness to 1Å CentroTherm CHV-100 Post Implant Annealing to 1700 C 2014 Microsemi Corporation 28
Microsemi Power Products MOSFETs (100V-1200V) Highest Performance SiC MOSFETs (1200V 50mΩ and 80mΩ ) MOSFETs FREDFETs (MOSFET with fast body diode) COOLMOS TM (Superjunction MOSFET) Internal body diode IGBTs (600V-1200V) Lowest Cost PT (Punch-Thru) short tail current NPT (Non Punch-Thru) low switching losses and easy to parallel Field Stop low conduction losses separate diode (combi) Diodes SiC Schottky Diodes (650V, 1200V, and 1700V) Si Fast Recovery Epitaxial Diodes FRED (200V-1200V) Si Schottky, low V F and fast switching (200V) 2014 Microsemi Corporation 29
Microsemi SiC Schottky Diodes 650V SiC Schottky Diodes Volts 650 I F(avg) V F Amps Volts Part Number Package 10 1.5 APT10SCD65K TO-220 20 1.5 APT20SCD65K TO-220 30 1.5 APT30SCD65B TO-247 2 x 10 1.5 APT10SCD65KCT TO-220 1200V SiC Schottky Diodes 1200 10 20 30 1.5 APT10SCD120B TO-247 1.5 APT10SCD120K TO-220 1.5 APT20SCD120B TO-247 1.5 APT20SCD120S D 3 1.5 APT30SCD120B TO-247 1.5 APT30SCD120S D 3 2 x 10 1.5 APT10SCD120BCT TO-247 1700V SiC Schottky Diodes 1700 10 1.5 APT10SCE170B TO-247 Future products 650V, 1200V, and 1700V 20A & 50A single chip design Microsemi Advantages Superior Passivation Technology leads to higher reliability. Microsemi thin film passivation applied in the wafer fab vs. competitors spin on passivation applied post wafer fab. Patented Technology Junction barrier structure has a lower V F than any equivalent die size (due to larger Schottky area and buried P-Wells). Microsemi SiC Wafer Fab SiC MOSETs are Designed and Manufactured at Microsemi s SiC Wafer Fab in Bend, Oregon. 2014 Microsemi Corporation 30
Microsemi SiC MOSFETs Voltage Current R DS(ON) Part Number Package Availability 1200V 40A 50A 80mΩ 50mΩ APT40SM120B APT40SM120S APT40SM120J (32A) APT50SM120B APT50SM120S APT50SM120J (37A) TO-247 D3 SOT-227 TO-247 D3 SOT-227 Available Now 700V 65A 30mΩ TBD TBD November 2014 1200V 20A 160mΩ TBD TBD December 2014 1200V 80A 40mΩ TBD TBD December 2014 1200V 100A 25mΩ TBD TBD December 2014 1700V 20A 120mΩ TBD TBD March 2015 Microsemi Advantages Best in class R DS(ON) vs. Temperature Low Switching Losses Low Conduction Losses Short Circuit Withstand Rated Superior Stability Microsemi patented SiC MOSFETs 2014 Microsemi Corporation 31
SiC Standard Power Module - Product Offering SiC Mosfet + SiC diodes 3-Level Phase leg PFC SiC diodes Dual diode Full bridge IGBT + SiC diodes Boost chopper Dual Boost chopper 3-Level Mosfet/CoolMos + SiC diodes Boost/Buck chopper Single switch Phase leg Full bridge 3-phase bridge SiC power modules advantages High speed switching Low switching losses Low input capacitance Low drive requirements Low profile Minimum parasitic inductance Lower system cost Increased reliability Optional material assembly AlN substrate Al2O3 substrate Copper base plate AlSiC base plate Custom product capabilities Modules designed for high frequency, high performance, high density and energy saving power systems 2014 Microsemi Corporation 32
Microsemi SiC Power Modules NEW PRODUCTS Low Profile and Industry standard packages Great design flexibility to offer modified versions! Technology Topology Voltage Current Tc=80 C Rdson max. per switch Tj=25 C Package - Height APTMC120TAM12CTPAG 3-Phase leg + Parallel diode 1200V 150A 12mΩ SP6P 12mm APTMC120TAM17CTPAG 3-Phase leg + Parallel diode 1200V 100A 17mΩ SP6P 12mm APTMC120TAM33CTPAG 3-Phase leg + Parallel diode 1200V 60A 33mΩ SP6P 12mm APTMC120AM25CT3AG Phase Leg + Parallel diode 1200V 80A 25mΩ SP3 12mm APTMC120AM16CD3AG Phase Leg + Parallel diode 1200V 100A 16mΩ D3 30mm APTMC120AM12CT3AG Phase Leg + Parallel diode 1200V 150A 12mΩ SP3 12mm APTMC120AM09CT3AG Phase Leg + Parallel diode 1200V 200A 9mΩ SP3 12mm APTMC170AM60CT1AG Phase Leg + Parallel diode 1700V 40A 60mΩ SP1 12mm APTMC170AM30CT1AG Phase Leg + Parallel diode 1700V 80A 60mΩ SP1 12mm SP1 SP3 SP6P D3 2014 Microsemi Corporation 33
Summary Microsemi SiC MOSFETs Microsemi s Best-in-Class SiC MOSFETs enable customers to design ultra efficient high power electronics Microsemi Advantages Best-in-class R DS(ON) vs. Temperature Ultra Low Gate Resistance Low Conduction Losses Low Switching Losses Short Circuit Withstand Rated Reliable Technology Platform Discrete and Power module 2014 Microsemi Corporation 34
2014 Microsemi Corporation 35