Discrete Solutions for Power Supplies March 2002

Transcription

1 Discrete Solutions for Power Supplies March 2002 Analog Discrete Interface & Logic Optoelectronics Across the board. Around the world.

2 Discrete Solutions for Power Supplies Fairchild Semiconductor is one of the world s leading providers of Discrete Power Products, including Metal Oxide Semiconductor Field Effect Transistors (MOSFETs), Insulated Gate Bipolar Transistors (IGBTs), and high-speed/ultrasoft rectifier diodes. For the industrial power market, Fairchild combines systems-level expertise with a vast portfolio of Discrete devices in a range of 20V to 1700V. As the developer of the IGBT and its QFET, UltraFET, and PowerTrench families, Fairchild comprises one of the broadest portfolios in the industry today. A strong legacy that supports power supply, motor drive, automotive, instrumentation, robotics, welding, and other high-reliability applications. Contents AC/DC Conversion Power Factor Correction (PFC) Applications pg 2 Switch Mode Power Supply Solutions for Telecom, Industrial, and Consumer Applications pg 3 Electric Welders Play Key Roles in the Evolution of Industry, Construction, and Transportation pg 4 SMPS IGBTs/Stealth Rectifiers pg 5 SMPS II IGBT Technologies pg 6 DC/DC Conversion Isolated DC/DC Conversion pg 6 Efficiency Case Study of 100W Full-Bridge DC/DC Converter pg 7 100W Full-Bridge DC/DC Converter Comparison pg 8 Design Considerations pg 9 MOSFETs Optimized for Isolated DC/DC Converters pg 10 MOSFET Selection by Package pg 10 Uninterruptible Power Supplies Off-Line UPS pg 12 On-Line UPS pg 13 Nomenclature Guide pg 14 1

3 AC/DC Conversion Power Factor Correction (PFC) Applications Power Factor Correction is becoming much more important for the following reasons: Government legislation EN mains harmonics (ratified by the EU in Dec 2000) Systems under 600W PC such as PC monitors, TV receivers, lighting ballasts Intel is now specifying PFC requirements on server power supplies Mid range ( W) Integrated high-end ( W) High-end distributed power supplies ( W) Existing systems such as air conditioning, telecom and datacom power supplies utilize PFC today Efficiency Better PFC equates to better efficiency Below are two typical solutions for implementing PFC Solution 1 Discontinuous Current Mode typically for 250W or below Vds Id Discontinuous Current Mode (DCM) PFC Output Power Voltage Rating Current Rating MOSFET <100W 500V, 600V 3~6A FQP4N50 FQP5N50 FQP6N50 FQP3N60 FQP4N60 FQP5N60 <250W 500V, 600V 7~12A FQA13N50 FQA16N50 FQP6N60 FQP7N60 FQA12N60 Solution 2 Continuous Current Mode typically for above 250W Continuous Current Mode (CCM) PFC Output Power Freq <75 Khz Freq <75 Khz Freq >75Khz for Low Boost Diode Boost Switch Boost Switch Boost Switch Line = 90Vac Vge > 11V Vge > 8V Vge > 8V 100W ISL9R460P2 HGTP3N60A4D FGP30N6S2D IRFP450A 250W ISL9R460P2 HGTG7N60A4D FGP30N6S2D IRFP460A 400W ISL9R460P2 HGTG12N60A4D FGH30N6S2D 2 x IRFP460A 600W ISL9R860P2 HGTG20N60A4D FGH40N6S2D 3 x IRFP460A 900W ISL9R1560P2 HGTG30N60A4D FGH50N6S2D 4 x IRFP460A 1100W ISL9R1560P2 HGTG40N60A4* FGH60N6S2* 4 x FDH44N50 Output Power Freq <75 Khz Freq <75 Khz Freq >75Khz for Low Boost Diode Boost Switch Boost Switch Boost Switch Line = 180Vac Vge > 11V Vge > 8V Vge > 8V 150W ISL9R460P2 HGTP3N60A4D FGP30N6S2D IRFP450A 400W ISL9R460P2 HGTG7N60A4D FGP30N6S2D IRFP460A 600W ISL9R860P2 HGTG12N60A4D FGH30N6S2D IRFP460A 1000W ISL9R1560P2 HGTG20N60A4D FGH40N6S2D 2 x IRFP460A 1400W ISL9R1560P2 HGTG30N60A4D FGH50N6S2D 3 x IRFP460A 2200W ISL9R3060G2 HGTG40N60A4* FGH60N6S2* 4 x FDH44N50 * These IGBTs do not have a rectifier included in the package due to die size constraints. Larger packages can be considered. The IGBT structure does block out the body diode that exists in MOSFETs so we offer these IGBTs with or without a co-packed rectifier. 2

4 AC/DC Conversion Switch Mode Power Supply Solutions for Telecom, Industrial, and Consumer Applications Solution 1 Single Switch Forward Converter typically used for low power applications (<250W) DCM PFC Converter Vds Id Main Single Switch Forward Converter (SSFC) Output Power 50W 100W 175W 250W AC Input (V) Main Switch FQP11N40 FQP7N60 FQP6N50 FQP5N80 FQP9N50 FQP6N80 FQA16N50 FQA7N90 FQP9N50 FQP4N80 FQP9N50 FQP5N90 FQA13N50 FQP7N80 FQA24N50 FQA9N90 Fairchild s new stripe cell process technology, QFET, boosts efficiency in power system designs without increasing cost. The new technology increases power density, reduces power loss, and improves reliability. Solution 2 Half-Bridge or Full-Bridge Converter typically used for high power applications (>250W) CCM PFC Converter DC Bus for Distributed Architecture SMPS IGBT (with co-packed Diode) 600V SMPS IGBT for Power Conversion DC-DC Topology <250W <500W <1000W <2000W >2000W 2 Switch Fwd HGTP3N60A4D HGTG7N60A4D HGTG20N60A4D HGTG30N60A4D HGTG30N60A4D IRF830 HGTG12N60A4D FGH40N6S2D FGH50N6S2D FGH50N6S2D IRF840A FGH30N6S2D FDH44N50 2 x FDH44N50 HGTG40N60A4* IRFP450A IRFP460A FGH60N6S2* FDP15N50 3 x FDH44N50 Half-Bridge HGTP3N60A4D HGTG7N60A4D HGTG12N60A4D HGTG30N60A4D HGTG30N60A4D HGTG12N60A4D FGH30N6S2D FGH50N6S2D FGH50N6S2D FGH30N6S2D HGTG20N60A4D HGTG40N60A4* FGH40N6S2D FGH60N6S2* Full-Bridge HGTP3N60A4D HGTG7N60A4D HGTG12N60A4D HGTG30N60A4D HGTG30N60A4D HGTG12N60A4D FGH30N6S2D FGH50N6S2D FGH50N6S2D HGTG20N60A4D HGTG40N60A4* FGH40N6S2D FGH60N6S2* * These IGBTs do not have a rectifier included in the package due to die size constraints. Larger packages can be considered. The IGBT structure does block out the body diode that exists in MOSFETs so we offer these IGBTs with or without a co-packed rectifier. Devices in red are the latest high voltage MOSFETs Devices in black are SMPSI 600V IGBTs, available with or without a co-packed Fairchild UltraFast Rectifier Devices in blue are SMPSII 600V IGBTs, available with or without a co-packed Fairchild Stealth Rectifier 3

5 AC/DC Conversion Basic Schematic for Welding SMPS IGBT (with co-packed Diode) Electric Welders Play Key Roles in the Evolution of Industry, Construction, and Transportation With the emergence of power electronics technologies, modern electric welders feature greater energy efficiency, reliability, flexibility, safety, and lighter weight than traditional electric welding machines. Many manufacturers have implemented advanced power electronics technologies to develop welding machines such as: Tungsten inert gas welders Metal arc welders Metal inert gas welders Plasma cutting machines Resistance welders The core technologies used are: Power devices (IGBTs) High-frequency soft switching technology High-frequency power transformer design technology Current mode control technology High-frequency and high-voltage ignition technology Resonant converter and phase-shifted PWM technology IGBT Modules for High Power Welders Part BV CES (V) I C (A) V CE(sat) (V) t f (ns) Short Circuit Built-in Number (Min) (T C =100 C) (Typ) (Typ) Rated Diode One Pack Molding Type Module FMBL1G50US yes yes FMBH1G50US yes yes FMBL1G75US yes yes FMBH1G75US yes yes FMBL1G100US yes yes FMBH1G100US yes yes FMBL1G150US yes yes FMBH1G150US yes yes FMBL1G200US yes yes FMBH1G200US yes yes FMBL1G300US yes yes FMBH1G300US yes yes Two-in-One Pack Molding Type Module FMG2G50US60* yes yes FMG2G75US60* yes yes FMG2G100US60* yes yes FMG2G150US60* yes yes FM2G150US yes yes FM2G200US yes yes FM2G300US yes yes FM2G400US yes yes * Newly Released See table on page 13 for SMPS IGBT Discretes available for welders 4

6 AC/DC Conversion SMPS IGBTs/Stealth Rectifiers SMPS IGBTs are manufactured with Fairchild s new SMPS technology offering better V SAT /E OFF trade-off. This is achieved through a new top-side structure and better epi and lifetime control allowing the manufacture of devices with less than half the previous generations E OFF. Additionally, this control smooths the switching waveforms for less EMI. SMPS IGBTs are manufactured using stepper based technology which offers better control and repeatability of the top side structure, thereby providing tighter specifications. SMPS IGBTs can run cooler than MOSFETs IGBT Loss Comparative Data SMPS IGBT I TURN-OFF ENERGY E OFF = 179µJ CE = 2A/DIV FALL TIME T F = 73ns V CE = 100V/DIV Reduced current tail, reduces switching losses Reduced conduction losses due to low saturation voltage Improved transistor and system reliability V GS = 5V/DIV Increase output power E OFF = 179µJ IGBT advantage in current density facilitates higher output power Use same heat sink for higher output power Competitive IGBT Reduce system cost Lower switch cost Reduce either IGBT die size or package size May often eliminate components Decrease heat sink extrusion Increase operating frequency and reduce transformer/filter cost Maximize device efficiency with the improved lower reverse recovery charge (Q RR ) and reduced I rrm (with co-packed Diode) Reduces switching transistor turn-on losses in hard switched applications Reduced EMI I CE = 2A/DIV V GS = 5V/DIV TURN-OFF ENERGY E OFF = 341µJ FALL TIME T F = 109ns V CE = 100V/DIV E OFF = 341µJ New Stealth Diode Diode Recovery Comparative Data Offers reverse recovery times (t rr ) as low as 25ns Avalanche energy rated Offers soft recovery switching (S = t b /t a >1) at rated current, high switching d i /d t, and hot junction temperature (125 C) T J = 125 C, I F = 13.5A, di/dt = 800A/µs, V R =400V I rrm (STEALTH) Elimination of snubber circuit becomes possible Offers reduced EMI Improved device efficiency with the improved lower reverse recovery charge (Q RR ) and reduced I rrm V CE = 100V/DIV Reduces switching transistor turn-on losses in hard switched applications Competitor I rrm I CE = 5A/DIV 5

7 AC/DC Conversion SMPS II IGBT Technology Improvements Reduced Threshold and Plateau Voltage SMPS I and II IGBT 600V, 12A Gate Charge Comparison 300V, 12A R g =25Ω, I g =1mA Easy to implement in designs using HV MOSFETs Low Gate Charge Reduced gate drive power dissipation 60% reduction over SMPS I and 80% reduction over MOSFET Can be driven directly from the control IC UIS Energy Rating More robust, Comfort zone for engineers mJ capability Gate to Emitter Voltage (V) SMPS II SMPS I Stealth Diode Co-Pack Time (s) 30% reduction in Turn-On Energy (EON) Soft recovery characteristics reduces EMI DC/DC Conversion Isolated DC/DC Conversion DC/DC converters are available for a multitude of applications with widely varying requirements. One key differentiator is the inclusion of isolation. In most cases this is a safety requirement, but the transformer can also provide a number of benefits especially if the ratio between input and output voltages is high. Although this section focuses on common isolated designs, the MOSFET requirements of a non-isolated or buck style converter, used in computer designs and VRMs are very similar to those used on the output or secondary stage of these converters. Isolated DC/DC Converter Primary Switch Requirements Typically MOSFETs with breakdown voltages between V are used depending on the input voltage and topology For the Forward converter and other single switch designs where transformer leakage current can generate high transient voltages, 100V and 200V devices are common for 24V and 48V telecom systems For the half-bridge and other multi-switch topologies 60V through to 100V are common in telecom, datacom and server applications For high efficiency, MOSFETs need to be optimized for the lowest combination of switching and conduction losses and the appropriate die size must be selected for a given power rating and switching frequency MOSFETs should not generate high losses in any discrete or I.C. driver circuitry There should be good immunity to self turn on resulting from high dv/dt on the MOSFET drain. This is especially true in bridge topologies when snappy MOSFET body diodes come out of reverse recovery Rugged in over-voltage transient conditions, otherwise known as avalanche Available in Low R θjc packaging from SuperSOT-6 to TO-247 6

8 DC/DC Conversion Isolated DC/DC Conversion (cont.) Fairchild Advanced Medium Voltage MOSFETs Fairchild Trench MOSFETs from V are designed to meet the above requirements, especially at the highest operating frequencies used with today s magnetic components Industry benchmark R DS(ON) vs Q g figure-of-merit to reduce conduction and switching losses Very low internal gate resistance coupled with low gate charge allows the fastest switching times and reduces power dissipation in the driver circuitry Reduced Miller charge or drain-to-gate capacitance for high turn on immunity with high drain dv/dt Rugged in avalanche with good safe operating area capability Gate Charge Improvements New Medium Voltage Trench designs offer both lower gate charge and R DS(ON) for a given die-size as compared to previous generation 2V/Div 10 Importance of Gate Charge FDS % reduction in Q GD 50% reduction in Q TOT(10) V GS Volts 35% reduction in R DS(ON) FDS Q G Gate Charge (nc) 5nC/Div Efficiency Case Study of 100W Full-Bridge DC/DC Converter Features and Benefits of New Trench Process Latest generation trench processing lowers both the specific R DS(ON) and gate charge, providing higher efficiencies across the converter output current range Lower R DS(ON) has larger effect on efficiency as primary RMS currents increase Lower gate charge decreases switching losses, providing increased converter efficiency Reduced ESR enables low source impedance driver circuitry to dramatically reduce switching speeds Narrow Trench design reduces Miller charge Low gate charge decreases switching losses, improving converter efficiencies at lower load currents where R DS(ON) loss contribution is small. The combination of both low gate charge and low R DS(ON) improve converter efficiencies as switch currents increase. MAX R DS(ON) MAX R DS(ON) TYP TYP MAX Package Part Number BV DSS I O V GS = 10V V GS = 6.0V Q TOT(10) Q GD V GS TYP. Application (Volts) (Amps) (mω) (mω) (nc) (nc) (Volts) SO-8 FDS V I/P Full-Bridge <150W 24V I/P Forward (Passive Reset) <60W SO-8 FDS V I/P Full-Bridge <125W 24V I/P Forward (Passive Reset) <50W SO-8 FDS V I/P Forward (Active Reset) <60W SO-8 FDS V I/P Forward (Active Reset) <50W 7

9 DC/DC Conversion R DS(ON) vs Q g Case Study of 100W Full-Bridge DC/DC Converter In this case study, the higher R DS(ON) provides better efficiency Current rating and package should be chosen based on converter topology and power rating Vin = 36V Lower R DS(ON) does NOT always produce the highest converter efficiency or provide the lowest silicon junction temperature The device junction temperature is determined from the total losses in the switch and thermal resistance from junction to ambient (R θja ) Total primary side switch losses are calculated from the combination of conduction and switching losses Lower gate charge usually results in lower switching losses unless a snubber network dominates the switching transitions Efficiency (%) Vin = 48V Vin = 75V FDS3680 FDS3670 MAX R DS(ON) MAX R DS(ON) TYP TYP MAX Package Part Number BV DSS I O V GS = 10V V GS = 6.0V Q TOT(10) Q GD V GS TYP. Application (Volts) (Amps) (mω) (mω) (nc) (nc) (Volts) SO-8 FDS V I/P Full-Bridge <125W 24V I/P Forward (Passive Reset) <50W SO-8 FDS V I/P Full-Bridge <100W 24V I/P Forward (Passive Reset) <40W Isolated DC/DC Converter Synchronous Secondary Switch Requirements Typically MOSFETs with breakdown voltages between 12 and 40V are used depending on the input and output voltage range and topology. The most typical output voltages are 5V. Lower voltage MOSFETs can be used if the input voltage range is limited by a pre-regulator stage. This adds complexity, but allows lower R DS(ON) MOSFETs for a given die size. For high efficiency the MOSFETs need to be optimized for the lowest conduction loss to gain the biggest advantage over Schottky rectifier technology. Switching losses are also important, especially if a discrete gate driver is used, but many topologies use the transformer to generate the MOSFET gate signals and low gate charge is not the dominant factor. For high reliability, the MOSFETs must be rugged in over-voltage transient conditions, otherwise known as avalanche Devices available in Low R θjc packaging from SuperSOT-6 to TO-263 8

10 DC/DC Conversion Isolated DC/DC Converter (cont.) Fairchild Advanced Low Voltage MOSFETs Synchronous Rectifier Circuits for Isolated DC/DC Fairchild Trench MOSFETs from 20-40V are designed to meet the above requirements, especially at the highest operating frequencies used with today s magnetic components. Industry benchmark R DS(ON) reduces conduction losses, especially at low gate drive voltages. A number of technologies are available with different threshold voltage ratings allowing high efficiency to be maintained over a wide operating range. Forward Converter Secondary Very low internal gate resistance coupled with low gate charge allows the fastest switching times and reduces power dissipation in any driver circuitry. Reduced Miller charge or drain to gate capacitance for high turn on immunity with high drain dv/dt Rugged in avalanche with good safe operating area capability Design Considerations Maximum secondary rectifier RMS current handling capability is dependent on the device R DS(ON), thermal path, body diode conduction time, switching losses, and potential avalanche losses. Parallel MOSFETs for low R DS(ON) to limit on-state power loss Minimize gate trace lengths to avoid gate oscillations due to high parasitic inductance between parallel MOSFETs and/or gate drive Conventional Full-Wave Rectifier Minimize and equalize power trace impedance to aid in current sharing Secondary side MOSFET gate timing to avoid shoot-through Use low impedance gate driver for fast channel shut off Limit body diode conduction for peak efficiency Drain-source over-voltage protection Snubber circuitry to limit peak drain-source voltages Select 100% tested avalanche protected MOSFETs Protect against re-applied gate signal due to Cgd dvds/dt Insert a localized gate-source turn-off transistor to shunt Cgd feedback current, which will prevent Cgs charging Current Double Rectifier 9

11 DC/DC Conversion MOSFETs Optimized for Isolated DC/DC Converters* Primary Switches Forward Converter 24V Input < 50W < 75W < 100W < 200W FDS3670 FDS3672 FDD3670 HUF75645P3 FDD3690 FDD3680 HUF75639P3 HUF75645S3S HUF75639S3S Primary Switches Forward Converter 48V Input < 50W < 75W < 100W < 200W FDS2570 FDS2572 FDD2570 FDB2570 FDD2670 FDB2670 HUF75829D3 HUF75842P3 HUF75829D3S HUF75842S3 HUF75842S3S Primary Switches Full-Bridge 48V Input < 100W < 150W < 200W < 250W < 500W FDS3670 FDS3672 FDD3680 FDD3570 HUF75639P3 FDS3680 FDD3580 FDD3670 HUF75639S3S FDS3580 FDS3570 HUF75645P3 HUF75645S3S HUF75652G3 Secondary Synchronous Rectifiers I out < 10A I out < 15A I out < 20A I out < 30A I out < 40A FDS6670A FDS6688 ISL9N306AS3ST ISL9N304AS3ST ISL9N302AS3ST FDS6680 FDS6682 ISL9N306AD3ST FDB8030 ISL9N303AS3ST FDS6694 FDS6672 FDD6670A FDB7045L FDD6680 FDS7064N7 FDS7764A * See Nomenclature Guide for any package options. MOSFET Selection by Package MAX MAX MAX R DS(ON) R DS(ON) R DS(ON) TYP TYP MAX Package Part Number BV DSS I D V GS = 10V V GS = 6.0V V GS = 4.5V Q TOT(10) Q GD V GS TYP Application (Volts) (Amps) (mω) (mω) (mω) (nc) (nc) (Volts) SSOT-6 FDC655AN Synch. Rect., Self-Drive, IC drive, IOUT < 3A SSOT-8 FDS6674A @4.5Vgs Synch. Rect., IC drive, IOUT < 10A SSOT-8 FDR4420A Synch. Rect., Self-Drive, IC drive, IOUT < 10A SO-8 FDS6572A @4.5Vgs Synch. Rect., IC drive, IOUT < 15A SO-8 FDS6574A @4.5Vgs 17 8 Synch. Rect., IC drive, IOUT < 15A SO-8 FDS6670A Synch. Rect., Self-Drive, IC drive, IOUT < 10A SO-8 FDS6680A Synch. Rect., Self-Drive, IC drive, IOUT < 10A SO-8 FDS Synch. Rect., Self-Drive, IC drive, IOUT < 7A SO-8 FDS6612A Synch. Rect., Self-Drive, IC drive, IOUT < 5A SO-8 FDS Synch. Rect., Self-Drive, IC drive, IOUT < 10A SO-8 FDS @5vgs 5 16 Synch. Rect., Self-Drive, IC drive, IOUT < 7A SO-8 FDS6672A @4.5Vgs Synch. Rect., IC drive, IOUT < 10A SO-8 FDS Synch. Rect., Self-Drive, IC drive, IOUT < 15A SO-8 FDS Synch. Rect., Self-Drive, IC drive, IOUT < 12A SO-8 FDS @5Vgs 8 16 Synch. Rect., Self-Drive, IC drive, IOUT < 12A SO-8 FDS Synch. Rect., Self-Drive, IC drive, IOUT < 8A SO-8 FDS @5Vgs Synch. Rect., Self-Drive, IC drive, IOUT < 15A SO-8 FDS Synch. Rect., Self-Drive, IC drive, IOUT < 10A SO-8 FDS Synch. Rect., Self-Drive, IC drive, IOUT < 7A SO-8 FDS V I/P Full-Bridge <150W 48V I/P Half-Bridge <80W SO-8 FDS V I/P Full-Bridge <125W 48V I/P Half-Bridge <75W SO-8 FDS V I/P Full-Bridge <150W 24V I/P Forward (Passive Reset) <60W SO-8 FDS V I/P Full-Bridge <100W 24V I/P Forward (Passive Reset) <50W SO-8 FDS V I/P Full-Bridge <75W 24V I/P Forward (Passive Reset) <50W SO-8 FDS V I/P Forward (Passive Reset) <35W 24V I/P Flyback <25W SO-8 FDS V I/P Forward (Active Reset) <60W SO-8 FDS V I/P Forward (Active Reset) <50W SO-8 FDS V I/P Forward (Passive Reset) <35W Current ratings can vary depending on the conditions used and may not be a true representation of the capability of the device 10

12 DC/DC Conversion MOSFET Selection by Package (cont.) MAX MAX MAX R DS(ON) R DS(ON) R DS(ON) TYP TYP MAX Package Part Number BV DSS I D V GS = 10V V GS = 6.0V V GS = 4.5V Q TOT(10) Q GD V GS TYP Application (Volts) (Amps) (mω) (mω) (mω) (nc) (nc) (Volts) TO-252 FDD6670A Synch. Rect. IOUT < 15A TO-252 FDD6680A Synch. Rect. IOUT < 15A TO-252 FDD6690A Synch. Rect. IOUT < 10A TO-252 FDD6612A Synch. Rect. IOUT < 5A TO-252 FDD Synch. Rect. IOUT < 20A TO-252 FDD Synch. Rect. IOUT < 10A TO-252 FDD6672A @4.5Vgs Synch. Rect. IOUT < 15A TO-252 FDD Synch. Rect. IOUT < 20A TO-252 ISL9N306AD3ST Synch. Rect. IOUT < 20A TO-252 ISL9N307AD3ST Synch. Rect. IOUT < 20A TO-252 ISL9N308AD3ST Synch. Rect. IOUT < 15A TO-252 ISL9N310AD3ST Synch. Rect. IOUT < 15A TO-252 ISL9N312AD3ST Synch. Rect. IOUT < 10A TO-252 FDD V I/P Half-Bridge <200W 48V I/P Full-Bridge <400W TO-252 FDD V I/P Half-Bridge <1500W 48V I/P Full-Bridge <350W TO-252 FDD V I/P Half-Bridge <125W 48V I/P Full-Bridge <300W 24V I/P Forward (Passive Reset) <100W TO-252 FDD V I/P Half-Bridge <100W 48V I/P Full-Bridge <250W 24V I/P Forward (Passive Reset) <75W TO-252 FDD V I/P Full-Bridge <200W TO-252 FDD V I/P Forward (Active Reset) <150W TO-252 HUF75829D3S V I/P Forward (Active Reset) <125W TO-252 FDD V I/P Forward (Passive Reset) <100W TO-263 ISL9N302AS3ST Synch. Rect. IOUT < 40A TO-263 ISL9N303AS3ST Synch. Rect. IOUT < 35A TO-263 ISL9N304AS3ST Synch. Rect. IOUT < 30A TO-263 ISL9N306AS3ST Synch. Rect. IOUT < 25A TO-263 ISL9N307AS3ST Synch. Rect. IOUT < 25A TO-263 HUF75545S3ST V I/P Full-Bridge <600W TO-263 HUF75645S3S V I/P Half-Bridge <350W 48V I/P Full-Bridge <600W 24V I/P Forward (Passive Reset) <200W TO-263 HUF75639S3S V I/P Half-Bridge <300W 48V I/P Full-Bridge <500W 24V I/P Forward (Passive Reset) <125W TO-263 HUF75842S3S V I/P Forward (Active Reset) <200W TO-263 FDB V I/P Forward (Active Reset) <150W TO-263 HUF75945S3ST V I/P Forward (Passive Reset) <150W TO-263 FDB V I/P Forward (Passive Reset) <100W Current ratings can vary depending on the conditions used and may not be a true representation of the capability of the device Products in Development - Preliminary Specifications for Bottomless SO-8 MOSFETs MAX MAX MAX R DS(ON) R DS(ON) R DS(ON) TYP TYP MAX Package Part Number BV DSS I D V GS = 10V V GS = 6.0V V GS = 4.5V Q TOT(10) Q GD V GS TYP Application (Volts) (Amps) (mω) (mω) (mω) (nc) (nc) (Volts) SO-8 FLMP FDS6064N @ Synch. Rect., Self-Drive, IC drive, IOUT < 25A @Vgs=2.5V SO-8 FLMP FDS6162N @ Synch. Rect., Self-Drive, IC drive, IOUT < 25A 5@Vgs=2.5V SO-8 FLMP FDS7060N Synch. Rect., Self-Drive, IC drive, IOUT < 20A SO-8 FLMP FDS7064N @4.5Vgs Synch. Rect., IC drive, IOUT < 20A SO-8 FLMP FDS7066N Synch. Rect., Self-Drive, IC drive, IOUT < 20A SO-8 FLMP FDS7096N Synch. Rect., Self-Drive, IC drive, IOUT < 15A SO-8 FLMP FDS7082N Synch. Rect., Self-Drive, IC drive, IOUT < 20A SO-8 FLMP FDS7088N Synch. Rect., Self-Drive, IC drive, IOUT < 20A SO-8 FLMP FDS7062N Synch. Rect., Self-Drive, IC drive, IOUT < 25A SO-8 FLMP FDS4070N <17A SO-8 FLMP FDS5170N <10A SO-8 FLMP FDS2070N V I/P Forward (Active Reset) <75W SO-8 FLMP FDS2170N V I/P Forward (Passive Reset) <60W 11

13 Uninterruptible Power Supplies Off-Line UPS The off-line UPS (uninterruptible power supply) switches the power load to battery backup power to allow the user to work through brief power outages or surges without data loss or inconvenient system downtime. In applications such as UPS where switching speed, low R DS(ON), and power dissipation are critical, Fairchild UltraFET technology devices provide the highest levels of performance in the market. Designed for 300-2kW off-line UPS DC/DC converters, AC/DC inverters, DC/DC power supplies, and general purpose load control applications in mind, Fairchild s UltraFET MOSFETs have been designed to optimize R DS(ON), Q g, and body diode (Q RR & t rr ) characteristics to provide a fast and efficient device for switching applications utilizing topologies such as half-bridge and full-bridge. In inductive load applications such as UPS and motor control, a relevant figure-of-merit is {R DS(ON) * (Q RR /t rr )}. Off-Line UPS Specific Benefits Lower R DS(ON) in a reduced package size = less conduction losses Reduced Q g = less switching losses Specifically doped to exhibit soft body diode characteristics (low Q RR and t rr ) Capable of withstanding high energy in the avalanche mode, dissipates less power Better thermal characteristics = more rugged Higher performance than most competitors Optimized die size = lower price and reduced size Devices Available in Various Current Ratings and Package Combinations* R DS(ON) Q g (typ) Q g (max) Q RR(MAX) t rr(max) BV DSS Part Number Package Amp Ω nc nc nc ns UPS Fig of Merit 55V HUF75307P3 TO HUF75321P3 TO HUF75329G3 TO HUF75332G3 TO HUF75337P3 TO HUF75339G3 TO HUF75343G3 TO HUF75344G3 TO HUF75345P3 TO V HUF75542P3 TO HUF75545P3 TO V HUF75623P3 TO HUF75631P3 TO HUF75637P3 TO HUF75639G3 TO HUF75639P3 TO HUF75645P3 TO HUF75652G3 TO V HUF75842P3 TO HUF75852G3 TO V HUF75925P3 TO HUF75939P3 TO HUF75945G3 TO HUF75945P3 TO * The devices in the table above are more cost effective solutions than RFP40N10, RFP50N06, RFP70N06, IRFZ44N 12

14 Uninterruptible Power Supplies On-Line UPS An on-line UPS constantly runs connected equipment on recreated AC power. The UPS converts incoming AC utility power into DC power and then back into clean AC power to operate your equipment. This double conversion process ensures consistent power quality that s completely isolated from any utility power disturbances. If the utility AC power fails, the UPS continues to run using its internal battery to provide the DC power which is converted to clean AC power for use by the load. This method of conversion involves the use of SMPS (switch mode power supply circuits). The heart of these circuits is the power semiconductor device. In choosing a power switch for applications such as the on-line UPS, designers should take into account the losses incurred in the circuit during different operational states. In the on-state the device allows current to flow with some power being lost due to the voltage seen across the device multiplied by the current through the device. This is known as conduction losses. When the device switches from the conduction state to the blocking state and vice-versa, energy is lost in the transition. This is known as switching losses. The SMPS IGBT has the lowest total losses (switching losses and conduction losses) in the smallest package compared to the alternative design. This allows the UPS designer to create a high power density and less expensive system. The SMPS IGBT and Stealth Diode are optimized devices that set the foundation for longer battery life by being more efficient switches. The SMPS IGBT and Stealth Diode (individually or co-packed) are designed specifically to provide enhanced output power quality in smaller, lighter, and more cost efficient designs. Fairchild offers a complete portfolio of power products for UPS applications: SMPS IGBTs, Stealth Diodes, IGBT Modules, Advanced High Voltage MOSFETs. Topology <250W <500W <1000W <2000W >2000W Full-Bridge HGTP3N60A4D HGTG7N60A4D HGTP12N60A4D HGTG30N60A4D HGTG30N60A4D HGTP3N60B3D HGTG12N60A4D FGH30N6S2D FGH50N6S2D FGH50N6S2D HGTP3N60C3D HGTG7N60B3D HGTG20N60A4D HGTG30N60B3D HGTG40N60A4* HGTP7N60A4D HGTG12N60B3D FGH40N6S2D HGTG30N60C3D FGH60N6S2* HGTP7N60B3D HGTG7N60C3D HGTG12N60B3D HGTG30N60B3D HGTP7N60C3D HGTG12N60C3D HGTG12N60C3D HGTG30N60C3D FGP30N6S2D HGTG20N60B3D HGTG40N60B3* HGTG20N60C3D HGTG40N60C3* * These IGBTs do not have a rectifier included in the package due to die size constraints. Larger packages can be considered. The IGBT structure does block out the body diode that exists in MOSFETs so we offer these IGBTs with or without a co-packed rectifier. Devices in black are a collection of SMPSI 600V IGBTs, B speed IGBTs and C speed IGBTs available with or without a co-packed Fairchild UltraFast Rectifier Devices in blue are SMPSII 600V IGBTs, available with or without a co-packed Fairchild Stealth Rectifier 13

15 Product Nomenclature Guide MOSFET FD S 6680 S FAIRCHILD DMOS DIE Number PACKAGE B: TO-263 C: SuperSOT-6 D: TO-252 G: SC70-6 H: TO-247 I: TO-262 M: SO16 N: SuperSOT-3 P: TO-220 R: SuperSOT-8 S: SO-8 T: SOT-223 U: TO-251 W: TSSOP-8 Z: BGA Additional Information C: Complementary N & P N: N-Channel P: P-Channel S: SyncFET Z: Zener gate protection Only on packages smaller than SO-8 UltraFET Q-FET 14

16 Product Nomenclature Guide STEALTH Rectifier Fast Rectifier ISL 9 R G2 FAIRCHILD CURRENT RATING DISCRETE POWER CONFIGURATION R- Rectifier K- Common Cathode VOLTAGE BREAKDOWN/10 i.e., (600, 1200) PACKAGE P2: TO-220A G2: TO-247 S3: TO-263 (D2 PAK) D3: TO-251/252 (D PAK) 5A3: TO-247ST 1Y3: TO-264 IN4: SOT-227 IGBTs (SMPS I) IGBTs (SMPS II) 15

17 Support Power and Performance for Multiple Markets Other Support Material: Power MOSFET Selection Guide IGBT/Rectifier Selection Guide Small Signal Transistors- New Releases Application Notes: Discrete Packaging Information: Discrete Models: Fairchild Power Solutions Building Blocks: Discrete Simulation Tools: 16