Optocoupler, Phototransistor Output, Low Input Current, SSOP-4, Half Pitch, Mini-Flat Package

Similar documents
Optocoupler, Phototransistor Output, 4 Pin LSOP, Long Creepage Mini-Flat Package

Optocoupler, Phototransistor Output, AC Input

Optocoupler, Phototransistor Output, Dual Channel, SOIC-8 Package

Optocoupler, Phototransistor Output, High Reliability, 5300 V RMS, Low Input Current

Optocoupler, Phototransistor Output, with Base Connection

Optocoupler, Phototransistor Output, with Base Connection, 300 V BV CEO

Optocoupler, Phototransistor Output, with Base Connection

Optocoupler, Photodarlington Output, Dual Channel, SOIC-8 Package

1 Form A Solid State Relay

1 Form A Solid State Relay

Optocoupler, Phototransistor Output, with Base Connection

Photovoltaic MOSFET Driver with Integrated Fast Turn-Off, Solid-State Relay

Optocoupler, Phototransistor Output, with Base Connection in SOIC-8 Package

Optocoupler, Phototransistor Output, with Base Connection

2.5 A Output Current IGBT and MOSFET Driver

High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero

High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs

Reflective Optical Sensor with Transistor Output

Y.LIN ELECTRONICS CO.,LTD.

Optocoupler, Phototransistor Output, With Base Connection

High Performance Schottky Rectifier, 1 A

Small Signal Fast Switching Diode

Silicon NPN Phototransistor

Silicon PIN Photodiode

Reflective Optical Sensor with Transistor Output

Silicon NPN Phototransistor

Small Signal Fast Switching Diode FEATURES PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS

Schottky Rectifier, 100 A

Ambient Light Sensor

Schottky Rectifier, 1.0 A

High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW

Silicon PIN Photodiode

Silicon PIN Photodiode

Standard Recovery Diodes, Generation 2 DO-5 (Stud Version), 95 A

Pulse Proof Thick Film Chip Resistors

High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW

K817P/ K827PH/ K847PH. Optocoupler with Phototransistor Output. Vishay Semiconductors. Description. Applications. Features.

4N25 Phototransistor Optocoupler General Purpose Type

Optocoupler, Phototransistor Output (Dual, Quad Channel)

700 MHz, -3 db Bandwidth; Dual SPDT Analog Switch

Reflective Optical Sensor with Transistor Output

Preamplifier Circuit for IR Remote Control

High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs

Power MOSFET FEATURES. IRF520PbF SiHF520-E3 IRF520 SiHF520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20

Schottky Rectifier, 1.0 A

Standard Recovery Diodes, (Stud Version), 40 A

Thick Film Resistor Networks, Military, MIL-PRF Qualified, Type RZ010 and RZ020 Dual-In-Line, Molded DIP

Aluminum Electrolytic Capacitors Power Eurodin Printed Wiring

UV SMD LED PLCC-2 FEATURES APPLICATIONS. at I F (ma) (ma) MIN. TYP. MAX. MIN. TYP. MAX. MIN. TYP. MAX.

IR Receiver Module for Light Barrier Systems

Power MOSFET. IRF9520PbF SiHF9520-E3 IRF9520 SiHF9520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS V Gate-Source Voltage V GS ± 20

Aluminum Electrolytic Capacitors Power Economic Printed Wiring

High-Bandwidth, Low Voltage, Dual SPDT Analog Switches

PHOTOTRANSISTOR OPTOCOUPLERS

High Performance Schottky Rectifier, 3.0 A

High Performance Schottky Rectifier, 1.0 A

Aluminum Electrolytic Capacitors Axial Miniature, Long-Life

Insulated Precision Wirewound Resistors Axial Leads

AC Line Rated Ceramic Disc Capacitors Class X1, 760 V AC / Class Y1, 500 V AC

Ultrabright White LED, Ø 3 mm

SuperTan Extended (STE) Capacitors, Wet Tantalum Capacitors with Hermetic Seal

Power MOSFET FEATURES. IRF540PbF SiHF540-E3 IRF540 SiHF540. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20

P6KE6.8A thru P6KE540A. TRANSZORB Transient Voltage Suppressors. Vishay General Semiconductor. FEATURES PRIMARY CHARACTERISTICS

Aluminum Capacitors Solid Axial

Low Current SMD LED PLCC-2

Pulse Proof, High Power Thick Film Chip Resistors

DG2706. High Speed, Low Voltage, 3, Quad SPDT CMOS Analog Switch. Vishay Siliconix DESCRIPTION FEATURES APPLICATIONS

Standard Recovery Diodes (Hockey PUK), 2100 A

DG2515, DG Ω, 235-MHz Bandwidth, Dual SPDT Analog Switch. Vishay Siliconix. Not for New Design. RoHS COMPLIANT DESCRIPTION FEATURES BENEFITS

Power MOSFET FEATURES. IRF9640PbF SiHF9640-E3 IRF9640 SiHF9640

Surface Mount Multilayer Ceramic Chip Capacitor Solutions for High Voltage Applications

Standard 0603 SMD LED

Power MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20

TLP521 1,TLP521 2,TLP521 4

Low Current SMD LED PLCC-2

TLP281,TLP281-4 TLP281,TLP281-4 PROGRAMMABLE CONTROLLERS AC/DC-INPUT MODULE PC CARD MODEM(PCMCIA) Pin Configuration (top view)

1.5KE6.8A thru 1.5KE540A, 1N6267A thru 1N6303A. TRANSZORB Transient Voltage Suppressors. Vishay General Semiconductor.

High-speed switching diodes. Type number Package Configuration Package NXP JEITA JEDEC

Transmissive Optical Sensor with Phototransistor Output

P-Channel 20 V (D-S) MOSFET

Aluminum Electrolytic Capacitors Radial Miniature, Low Impedance, High Vibration Capability

AC Line Rated Ceramic Disc Capacitors Class X1, 760 V AC, Class Y1, 500 V AC

40 V, 200 ma NPN switching transistor

Schottky Rectifier, 1 A

IR Sensor Module for Reflective Sensor, Light Barrier, and Fast Proximity Applications

Features. Applications. Truth Table. Close

Power MOSFET FEATURES. IRFZ44PbF SiHFZ44-E3 IRFZ44 SiHFZ44 T C = 25 C

S112-XHS. Description. Features. Agency Approvals. Applications. Absolute Maximum Ratings. Schematic Diagram. Ordering Information

SMD Aluminum Solid Capacitors with Conductive Polymer

50 W Power Resistor, Thick Film Technology, TO-220

Optocoupler, Phototransistor Output (Dual, Quad Channel)

P-Channel 20-V (D-S) MOSFET

P-Channel 1.25-W, 1.8-V (G-S) MOSFET

Power MOSFET FEATURES. IRL540PbF SiHL540-E3 IRL540 SiHL540

Power MOSFET FEATURES. IRF610PbF SiHF610-E3 IRF610 SiHF610. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 200 V Gate-Source Voltage V GS ± 20

Linear Optocoupler, High Gain Stability, Wide Bandwidth

TLP504A,TLP504A 2. Programmable Controllers AC / DC Input Module Solid State Relay. Pin Configurations (top view)

45 V, 100 ma NPN/PNP general-purpose transistor

65 V, 100 ma PNP/PNP general-purpose transistor

How To Use A Kodak Kodacom 2.5D (Kodak) With A Power Supply (Power Supply) And Power Supply

Transcription:

Optocoupler, Phototransistor Output, Low Input Current, SSOP-4, Half Pitch, Mini-Flat Package 22628- DESCRIPTION The series has a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a 4-pin 5 mil lead pitch mini-flat package. It features a high current transfer ratio at low input current, low coupling capacitance, and high isolation voltage. The coupling devices are designed for signal transmission between two electrically separated circuits. A C 2 4 3 C E FEATURES High CTR with low input current Low profile package (half pitch) High collector emitter voltage, V CEO = 8 V Isolation test voltage = 375 V RMS Low coupling capacitance High common mode transient immunity Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 APPLICATIONS Telecom Industrial controls Battery powered equipment Office machines Programmable controllers AGENCY APPROVALS Safety application model number covering all products in this datasheet is. This model number should be used when consulting safety agency documents. UL577, file no. E52744 cul DIN EN 6747-5-5 (VDE 884-5), available with option FIMKO EN 665, EN 695- CQC GB4943.-2 and GB8898-2 (suitable for installation altitude below 2 m) ORDERING INFORMATION V O S 6 8 A - # X T SSOP-4 PART NUMBER CTR BIN PACKAGE OPTION TAPE AND REEL 5 mm AGENCY CTR (%) CERTIFIED/PACKAGE ma UL, cul, FIMKO, CQC 5 to 6 63 to 25 to 2 8 to 6 3 to 26 SSOP-4, 5 mil pitch T -2T -3T -7T -8T UL, cul, FIMKO, CQC, VDE (option ) 5 to 6 63 to 25 to 2 8 to 6 3 to 26 SSOP-4, 5 mil pitch -XT -2XT -3XT -7XT -8XT Note Additional options may be possible, please contact sales office. Rev..6, 3-Mar-5 Document Number: 83465 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9

ABSOLUTE MAXIMUM RATINGS (T amb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage V R 6 V Power dissipation P diss 7 mw Forward current I F 5 ma OUTPUT Collector emitter voltage V CEO 8 V Emitter collector voltage V ECO 7 V I C 5 ma Collector current t p /T =.5, t p < ms I C ma Power dissipation P diss 5 mw COUPLER Isolation test voltage between emitter and detector t = min V ISO 375 V RMS Total power dissipation P tot 7 mw Storage temperature range T stg -55 to +5 C Ambient temperature range T amb -55 to + C Junction temperature T j 25 C Soldering temperature () t = s T sld 26 C Notes Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. () Refer to reflow profile for soldering conditions for surface mounted devices. P diss - Collector Power Dissipation (mw) 6 4 2 8 6 4 2-25 25 5 75 25 I F - Forward Current (ma) 6 5 4 3 2-25 25 5 75 25 Fig. - Power Dissipation vs. Ambient Temperature Fig. 2 - Forward Current vs. Ambient Temperature Rev..6, 3-Mar-5 2 Document Number: 83465 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9

ELECTRICAL CHARACTERISTICS (T amb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage I F = 5 ma V F..5 V Reverse current V R = 6 V I R. μa Input capacitance V F = V, f = MHz C I 8 pf OUTPUT Collector emitter leakage current V CE = V I CEO.7 na Collector emitter breakdown voltage I C = μa BV CEO 8 V Emitter collector breakdown voltage I E = μa BV ECO 7 V Collector emitter capacitance V CE = 5 V, f = MHz C CE 6 pf COUPLER Collector emitter saturation voltage I F = ma, I C =.25 ma V CEsat.2.4 V Cut-off frequency I F = ma, V CC = 5 V, R L = Ω f ctr 9 khz Coupling capacitance f = MHz C C.3 pf Note Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. CURRENT TRANSFER RATIO (T amb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT CTR 5 6 % -2 CTR 63 25 % I C /I F I F = ma, V CE = 5 V -3 CTR 2 % -7 CTR 8 6 % -8 CTR 3 26 % SWITCHING CHARACTERISTICS (T amb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT NON-SATURATED Turn on time t on 5 μs Rise time t r 5 μs V CC = 5 V, I C = 2 ma, R L = Ω Turn off time t off 8 μs Fall time t f 7 μs SATURATED Rise and fall time t r μs Fall time t f μs I F =.6 ma, V CC = 5 V, R L =.9 kω Turn on time t on 4 μs Turn off time t off 2 μs V CC = 5 V Input pulse Input R L V OUT % 9 % Output pulse t r t f t on t off isfh68a_ isfh68a_2 Fig. 3 - Test Circuit Fig. 4 - Test Circuit and Waveforms Rev..6, 3-Mar-5 3 Document Number: 83465 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9

SAFETY AND INSULATION RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Climatic classification (according to IEC 68 part ) 55//2 Comparative tracking index CTI 75 Maximum rated withstanding isolation voltage 4 % to 8 % RH, AC test of t = min V ISO 375 V RMS Maximum transient isolation voltage V IOTM 6 V peak Maximum repetitive peak isolation voltage V IORM 565 V peak Isolation resistance T amb = 25 C, V DC = 5 V R IO 2 Ω T amb = C, V DC = 5 V R IO Ω Output safety power P SO 3 mw Input safety current I SI 2 ma Input safety temperature T SI 5 C Creepage distance 5 mm Clearance distance 5 mm Insulation thickness DTI.4 mm Environment (pollution degree in accordance to DIN VDE 9) 2 Note As per IEC 6747-5-5, 7.4.3.8.2, this optocoupler is suitable for safe electrical insulation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of protective circuits. TYPICAL CHARACTERISTICS (T amb = 25 C, unless otherwise specified) I F - Forward Current (ma) T amb = C T amb = 75 C T amb = 25 C T amb = C T amb = -55 C I C - Collector Current (ma) 5 4 3 2 I F = 25 ma I F = ma I F = 2 ma I F = 5 ma I F = ma I F = 5 ma..6.8..2.4.6 V F - Forward Voltage (V) 2 3 4 5 6 7 8 9 V CE - Collector Emitter Voltage (V) Fig. 5 - Forward Voltage vs. Forward Current Fig. 6 - Collector Current vs. Collector Emitter Voltage Rev..6, 3-Mar-5 4 Document Number: 83465 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9

I CE - Leakage Current (na)... I F = ma V CE = 4 V V CE = 2 V V CE = 24 V -6-4 -2 2 4 6 8 2 N CTR - Normalized CTR (sat).4.2..8.6.4.2 Normalized to CTR value: I F = ma, V CE = 5 V, T amb = 25 C -6-4 -2 2 4 6 8 2 Fig. 7 - Collector Emitter Current vs. Ambient Temperature Fig. - Normalized Current Transfer Ratio vs. Ambient Temperature (saturated) I C - Collector Current (ma) 35 I F = 25 ma 3 25 2 I F = ma I F = ma 5 I F =.5 ma I F = 5 ma 5 I F = 2 ma...2.3.4 V CE - Collector Emitter Voltage (V) N CTR - Normalized CTR (non-saturated).4.2..8.6.4.2 Normalized to CTR value: I F = ma, V CE = 5 V, T amb = 25 C -6-4 -2 2 4 6 8 2 Fig. 8 - Collector Current vs. Collector Emitter Voltage Fig. - Normalized Current Transfer Ratio vs. Ambient Temperature (non-saturated) V CEsat - Collector Emitter Voltage (V).2..8.6.4.2. I F = ma -6-4 -2 2 4 6 8 2 N CTR - Normalized CTR (sat) 2..8.6.4.2..8.6 T amb = -55 C T amb = C T amb = 25 C.4 Normalized to:.2 I F = ma, V CE = 5 V, T amb = C T amb = 25 C.. I F - Forward Current (ma) Fig. 9 - Collector Emitter Voltage vs. Ambient Temperature Fig. 2 - Current Transfer Ratio vs. Forward Current (saturated) Rev..6, 3-Mar-5 5 Document Number: 83465 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9

N CTR - Normalized CTR (NS) 2.5 2..5. T amb = -55 C T amb = 25 C T amb = C T amb = C.5 Normalized to: I F = ma, V CE = 5 V, T amb = 25 C.. I F - Forward Current (ma) t on, t off - Switching Time (μs) V CE = 5 V I C = 2 ma 5 5 2 R L - Load Resistance (kω) t off (μs) t on (μs) Fig. 3 - Current Transfer Ratio vs. Forward Current (non-saturated) Fig. 6 - Switching Time vs. Load Resistance F CTR - Cut-off-Frequency (khz). V CE = 5 V, T amb = 25 C I C - Collector Current (ma) Voltage Gain -5 - -5-2 -25-3 -35-4 R L = Ω R L = Ω V CE = 5 V f - Frequency (khz) Fig. 4 - Cut-off Frequency (- 3 db) vs. Collector Current Fig. 7 - Voltage Gain vs. Frequency Phase Angle (deg) -2-4 -6-8 - -2 R L = Ω V CE = 5 V R L = Ω -4-6 f - Frequency (khz) Fig. 5 - Phase Angle vs. Frequency Rev..6, 3-Mar-5 6 Document Number: 83465 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9

PACKAGE DIMENSIONS in millimeters.27 ±.25 5.3 ±.3 4.4 ±.2 2.6 ±.3.2 ±. 2. ±.2.2 ±.5.5 7. +.2 -.7.27.9.4 ±. 5. 7.5 22629-2 PACKAGE MARKING (example of -3XT) Pin dimple 68A3X V YWW 25 Notes Option is reflected with letter X. Tape and reel suffix (T) is not part of the package marking. Rev..6, 3-Mar-5 7 Document Number: 83465 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9

TAPE AND REEL DIMENSIONS in millimeters 7. 33 (3") Fig. 8 - Reel Dimensions (3 units per reel) Ø.5 ±. 2 ±. 4 ±..75 ±. 5.5 ±. 2 ±.3 8 ±. Fig. 9 - Tape Dimensions.35 ±.5 SOLDER PROFILE Temperature ( C) 3 25 2 5 255 C 24 C 27 C max. 2 s max. 26 C 245 C max. 3 s max. s max. ramp down 6 C/s HANDLING AND STORAGE CONDITIONS ESD level: HBM class 2 Floor life: unlimited Conditions: T amb < 3 C, RH < 85 % Moisture sensitivity level, according to J-STD-2 5 max. ramp up 3 C/s 5 5 2 25 3 984 Time (s) Fig. 2 - Lead (Pb)-free Reflow Solder Profile according to J-STD-2 Rev..6, 3-Mar-5 8 Document Number: 83465 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9

Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2/65/EU of The European Parliament and of the Council of June 8, 2 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 22/95/EC. We confirm that all the products identified as being compliant to Directive 22/95/EC conform to Directive 2/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS79A standards. Please note that some Vishay documentation may still make reference to the IEC 6249-2-2 definition. We confirm that all the products identified as being compliant to IEC 6249-2-2 conform to JEDEC JS79A standards. Revision: 2-Oct-2 Document Number: 9