Insulated Precision Wirewound Resistors Axial Leads
|
|
|
- Randell Francis
- 10 years ago
- Views:
Transcription
1 Insulated Precision Wirewound Resistors Axial Leads In wirewound precision resistors, the series holds a leading position in professional applications whenever an excellent stability of the ohmic value and a correspondingly low temperature coefficient are required at the same time. The model resistors comply with the most stringent requirements of the CECC specification. The series consists of 5 models covering the power range from 1 W to 1 W. Non-inductive versions can be supplied on request by specifying -NI. For higher power dissipations, the use of RH series resistors is recommended. FEATURES 1 W to 1 W at 25 C Approved according to CECC According to MIL-R-26/5C and MIL-R-26/6C Excellent stability < ±.3 % after 1 h High power up to 1 W at 25 C Low ohmic values 1 m available Low temperature coefficient ± 5 ppm/ C Electrical insulation Climatic protection Termination = Pure matte tin or Sn/Ag/Cu according to the ohmic value Material categorization: for definitions of compliance please see DIMENSIONS in millimeters INSULATED 25 min. A 25 min. Ø E Ø B Ø a ±.2 SERIES AND STYLE A MAX. R >.15 Ø B MAX. R.15 E ±.1 WEIGHT g 45 chamfer max..25 mm deep 4 4 L max. MOLDED 25 min. A 25 min. 1-2 a = 1 mm a = 1.2 mm Ø E Ø B K TECHNICAL SPECIFICATIONS VISHAY SFERNICE SERIES AND STYLE Reference CECC A B C D E Cross-Reference NF C83-21 RP8 RP7 RP4 RP5 RP6 Cross-Reference MIL-R-26/5C and MIL-R-26/6C RW81 RW8 RW79 RW74 RW78 Power Rating, Pr CECC Power Extended Sfernice Power Ohmic Range in Relation to Tolerance Qualified Ohmic Value Range CECC at 25 C, P 25 at 7 C, P 7 at 25 C, P 25 at 7 C, P 7 ± 5 % E24 ± 2 % E48 ± 1 % E96 ±.5 % E96 Note Undergoes European Quality Insurance System (CECC) Revision: 2-Apr-15 1 Document Number: 59 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 1 W.8 W 1 W.8 W.5 to.5 to.5 to.4 to 1.5 W 1.25 W 2 W 1.65 W.25 to.25 to.25 to.4 to 2.5 W 2 W 3 W 2.5 W.1 to.3 to.3 to.499 to W 5 W.2 to.2 to.2 to.3 to ±.1 % E96 Please consult 1 to 47.2 to 1.78 k.1 to 3.57 k.1 to 12.1 k 1 W 8.2 W.6 to.6 to.6 to.3 to.1 to 4. Limiting Element Voltage, U max. AC/DC 5 V 12 V 2 V 3 V 72 V Critical Resistance Out of nominal ohmic range 17 8 W 51 1 W
2 STANDARD ELECTRICAL SPECIFICATIONS MODEL RESISTANCE RANGE RATED POWER P 25 C W TOLERANCE ± % 1.5 to 2K 1.1,.2,.5, 1, 2, to 6.8K 2.1,.2,.5, 1, 2, to 15K 3.1,.2,.5, 1, 2, to 59K 6.1,.2,.5, 1, 2, to 15K 1.1,.2,.5, 1, 2, 5 MECHANICAL SPECIFICATIONS Series and Style 1, 2 3, 6, 1 Encapsulant Resistive Element Ceramic Substrate Termination High temperature mold compound High temperature silicone coating CuNi or NiCr Alumina or steatite Pure matte tin or Sn/Ag/Cu ENVIRONMENTAL SPECIFICATIONS Temperature Range -55 C to 275 C Climatic Category (LCT/UCT/days) 55/2/56 PERFORMANCE TESTS Short Time Overload Load Life Dielectric w/s Voltage Rapid Change of Temperature Climatic Sequence Humidity (Steady State) Shock Vibration Load Life at Upper Category Temperature CONDITIONS 6.25 Pr Extended Sfernice Power or U = 2 U max. /5 s for 1, 2, 3 12 Pr Extended Sfernice Power or U = 2 U max. /5 s for 6, 1 9 /3 cycles 1 h Pr Extended Sfernice Power + 25 C U RMS = 5 V/6 s IEC Test Na 5 cycles (3 at LCT/3 at UCT) -55 C / +2 C -55 C / +2 C/56 days IEC Test Ca 95 % HR/4 C 56 days IEC Test Ea 5 g s/half sine/ 3 times by direction (i.e. 18 shocks) IEC Test Fc 1 Hz / 55 Hz 9 / 3 cycles 1 h Pr Extended Sfernice Power +2 C REQUIREMENTS ( R/R OR INDICATED PARAMETER) CECC ± (.5 % +.5 ) Insulation R 1 G No flashover or breakdown Leakage current < 1 μa ± (.5 % +.5 ) ± (.5 % +.5 ) Insulation R 1 M ± (.5 % +.5 ) Insulation R 1 G Revision: 2-Apr-15 2 Document Number: 59 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
3 TEMPERATURE COEFFICIENT in the range -55 C to +2 C OHMIC RANGE REQUIREMENT CECC < 1 ± 1 ppm/ C 1 to < 1 ± 5 ppm/ C 1 ± 25 ppm/ C STABILITY AND POWER RATING Stability changes slightly according to power rating and ambient temperature. This fact is especially important for users needing a life drift lower than the initial resistance tolerance. Typical drifts, after 2 h life test made under the 9 / 3 conditions and at an ambient temperature of 25 C, are: OHMIC RANGE R %/R % Pr 1 W 2 W 3 W 5 W 1 W.3.5 Pr.5 W 1 W 1.5 W 2.5 W 5 W.15 POWER RATING 125 TEMPERATURE RISE 25 RATED POWER IN % HOT SPOT TEMPERATURE IN C AMBIENT TEMPERATURE IN C NON INDUCTIVE WINDING (NI) Non inductive (Ayrton Perry) winding available. Please consult. INDUCTANCE (Example) INDUCTANCE IN µh W 3 NI 1 W FREQUENCY IN MHz PACKAGING (see datasheet 532 and 533) Reel of 1 units for 1, 2, 3 Ammopack of 5 units for 1, 2, 3 Bag of 1 units for 1, 2 Blister of 2 units for 3 Box of 5 units for 6, 1 MARKING RATED POWER IN W trademark, series, style, CECC style (if applicable) nominal resistance (in, k ), tolerance (in %), manufacturing date. Revision: 2-Apr-15 3 Document Number: 59 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
4 ORDERING INFORMATION 1 5R5 J R15 MODEL STYLE OHMIC VALUE TOLERANCE PACKAGING GLOBAL PART NUMBER INFORMATION R L P R J B GLOBAL MODEL SIZE OPTION OHMIC VALUE TOLERANCE PACKAGING SPECIAL N = non inductive winding The first four digits are significant figures and the last digit specifies the number of zeros to follow. R designates decimal point. 68R = = 2.3 k 88R88 = B =.1 % C =.2 % D =.5 % F = 1 % G = 2 % J = 5 % Standard packaging: Size 1 and 2: S14 = bag, 1 pieces size 3: B15 = bulk, 2 pieces size 6 and 1: B25 = box, 5 pieces As applicable Ex = MEX Revision: 2-Apr-15 4 Document Number: 59 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
5 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 211/65/EU of The European Parliament and of the Council of June 8, 211 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 22/95/EC. We confirm that all the products identified as being compliant to Directive 22/95/EC conform to Directive 211/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS79A standards. Please note that some Vishay documentation may still make reference to the IEC definition. We confirm that all the products identified as being compliant to IEC conform to JEDEC JS79A standards. Revision: 2-Oct-12 1 Document Number: 91
Precision Surface Mount Resistors Wirewound or Metal Film Technologies
Precision Surface Mount Resists irewound Metal Film Technologies FEATURES Accding to CECC 40402-801 (wirewound) ide range of ohmic values (0.04 to 1 M) Low temperature coefficient (± 25 ppm/ C available)
Pulse Proof Thick Film Chip Resistors
Pulse Proof Thick Film Chip Resistors FEATURES High pulse performance, up to kw Stability R/R 1 % for h at 70 C AEC-Q200 qualified Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
Thick Film Resistor Networks, Military, MIL-PRF-83401 Qualified, Type RZ010 and RZ020 Dual-In-Line, Molded DIP
MDM (Military M831/1 and /2) Thick Film Resistor Networks, Military, MIL-PRF-831 Qualified, Type RZ1 and RZ2 Dual-In-Line, Molded DIP STANDARD ELECTRICAL SPECIFICATIONS VISHAY DALE MODEL/ PIN NO. MIL STYLE
Power Resistor Thick Film Technology
Power Resistor Thick Film Technology LTO series are the extension of RTO types. We used the direct ceramic mounting design (no metal tab) of our RCH power resistors applied to semiconductor packages. FEATURES
50 W Power Resistor, Thick Film Technology, TO-220
50 W Power Resistor, Thick Film Technology, TO-220 FEATURES 50 W at 25 C heatsink mounted Adjusted by sand trimming Leaded or surface mount versions High power to size ratio Non inductive element Material
Pulse Proof, High Power Thick Film Chip Resistors
Pulse Proof, High Power Thick Film Chip Resistors STANDARD ELTRICAL SPIFICATIONS MODEL CASE SIZE INCH CASE SIZE METRIC POWER RATING P 70 W LIMITING ELEMENT VOLTAGE U max. AC/DC -HP e3 FTURES Excellent
Metal Film Resistors, Military, MIL-R-10509 Qualified, Precision, Type RN and MIL-PRF-22684 Qualified, Type RL
Metal Film Resistors, Military, Qualified, Precision, Type RN and Qualified, Type RL FEATURES Very low noise (- 40 db) Very low voltage coefficient (5 ppm/v) Controlled temperature coefficient Flame retardant
High Performance Schottky Rectifier, 1 A
High Performance Schottky Rectifier, A VS-MQNPbF Cathode Anode DO-24AC (SMA) PRODUCT SUMMARY Package DO-24AC (SMA) I F(AV) A V R V V F at I F.78 V I RM ma at 25 C T J max. 5 C Diode variation Single die
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
TSFF55 High Speed Infrared Emitting Diode, 87 nm, GaAlAs Double Hetero 26 DESCRIPTION TSFF55 is an infrared, 87 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high
Power Resistor for Mounting onto a Heatsink Thick Film Technology
DIMENSIONS in millimeters Power Resistor for Mounting onto a Heatsink Thick Film Technology FEATURES 800 W at 85 C bottom case temperature Wide resistance range: 0.3 to 900 k E24 series Non inductive Easy
Schottky Rectifier, 100 A
Schottky Rectifier, A VS-BGQ Cathode Anode PowerTab PRODUCT SUMMARY Package PowerTab I F(AV) A V R V V F at I F 0.82 V I RM 180 ma at 125 C T J max. 175 C Diode variation Single die E AS 9 mj FEATURES
Standard Thick Film Chip Resistors
Standard Thick Film Chip Resistors FEATURES Stability R/R = 1 % for 00 h at 70 C 2 mm pitch packaging option for size Pure tin solder contacts on Ni barrier layer provides compatibility with lead (Pb)-free
Knob Potentiometer FEATURES. P16NP P16NM Panel Cutout. Thickness nut 2 mm washer 1.5 mm. Panel sealing ring 12 wrench Thread M10 x 0.75 10.2 9.
Knob Potentiometer P6, PA6 FEATURES Test according to CECC 4000 or IEC 60393- P6 - Version for professional and industrial applications (cermet) W at 40 C PA6 - Version for professional audio applications
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
TSAL51 High Power Infrared Emitting Diode, 94 nm, GaAlAs/GaAs DESCRIPTION 96 1155 TSAL51 is an infrared, 94 nm emitting diode in GaAlAs/GaAs technology with high radiant power, molded in a blue-gray plastic
SMD PTC - Nickel Thin Film Linear Thermistors
SMD PTC - Nickel Thin Film Linear Thermistors Notes (1) Contact if closer TCR lot tolerance is desired. (2) Other R 25 -values and tolerances are available upon request. (3) Rated continuous working voltage
Surface Mount Multilayer Ceramic Chip Capacitor Solutions for High Voltage Applications
Surface Mount Multilayer Ceramic Chip Capacitor Solutions for High Voltage Applications ELECTRICAL SPECIFICATIONS X7R GENERAL SPECIFICATION Note Electrical characteristics at +25 C unless otherwise specified
Knob Potentiometer with Switch
Knob Potentiometer with Switch The is a revolutionary concept in panel mounted potentiometers. This unique design consists of a knob driving and incorporating a cermet potentiometer. Only the mounting
High Ohmic/High Voltage Metal Glaze Leaded Resistors
High Ohmic/High Voltage Metal Glaze Leaded Resistors FEATURES Technology: Metal glaze A metal glazed film is deposited on a high grade ceramic body. After a helical groove has been cut in the resistive
Aluminum Electrolytic Capacitors Axial Miniature, Long-Life
Aluminum Electrolytic Capacitors Axial Miniature, Long-Life 38 AML 0 ASM smaller dimensions Fig. QUICK REFERENCE DATA DESCRIPTION Nominal case sizes (Ø D x L in mm) 6.3 x.7 to 0 x 5 VALUE 0 x 30 to x 38
Metal Film Resistors, Non-Magnetic, Industrial, Precision
Metal Film Resistors, Non-Magnetic, Industrial, Precision FEATURES Small size - conformal coated Flame retardant epoxy coating Controlled temperature coefficient Excellent high frequency characteristics
High Surge Axial Cemented Wirewound Resistors
High Surge Axial Cemented Wirewound Resistors FEATURES High voltage surge (up to 12 kv) withstanding capability Non flammable silicon cement coating High grade ceramic core Material categorization: for
Metal Film Resistors, Industrial, Precision
Metal Film Resistors, Industrial, Precision FEATURES Small size - conformal coated Flame retardant epoxy coating Controlled temperature coefficient Available Excellent high frequency characteristics Exceptionally
Metal Film Resistors, Industrial, Flameproof
End of Life - August 13 Metal Film Resistors, Industrial, Flameproof STANDARD ELECTRICAL SPECIFICATIONS FEATURES Small physical size Low cost resistors have the ability to withstand overloads up to times
Standard Recovery Diodes, (Stud Version), 40 A
Standard Recovery Diodes, (Stud ersion), 40 A S- FEATURES High surge current capability Stud cathode and stud anode version Leaded version available DO-203AB (DO-5) PRODUCT SUMMARY I F(A) 40 A Package
Aluminum Electrolytic Capacitors Power Economic Printed Wiring
Aluminum Electrolytic Capacitors Power Economic Printed Wiring 0/0 PECPW 00/0 PEDPW Fig. QUICK REFERENCE DATA DESCRIPTION high ripple current 0/0 PECPW long life 0 C Nominal case size (Ø D x L in mm) Rated
Professional Thin Film MELF Resistors
,, - Professional Professional Thin Film MELF Resistors, and professional thin film MELF resistors are the perfect choice for most fields of rn professional electronics where reliability and stability
High Ohmic/High Voltage Metal Film Leaded Resistors
, High Ohmic/High Voltage FEATURES Metal film technology High pulse loading (up to 10 kv) capability Small size (0207/0411) Compatible with lead (Pb)-free and lead containing soldering processes Compliant
Aluminum Electrolytic Capacitors Power Eurodin Printed Wiring
Aluminum Electrolytic Capacitors Power Eurodin Printed Wiring 00/0 PEDPW Fig. QUICK REFERENCE DATA DESCRIPTION VALUE 00 0 Nominal case size (Ø D x L in mm) x 0 to 0 x 00 Rated capacitance range 0 μf to
Aluminum Electrolytic Capacitors Radial Miniature, Low Impedance, High Vibration Capability
Aluminum Electrolytic Capacitors Radial Miniature, Low Impedance, High Vibration Capability 048 RML 48 RUS lower longer life 36 RVI miniaturize 50 RMI high vibration FEATURES Very long useful life: 7000
High Ohmic/High Voltage Metal Glaze Leaded Resistors
VR37 High Ohmic/High Voltage FEATURES A metal glazed film is deposited on a high grade ceramic body. After a helical groove has been cut in the resistive layer, tinned electrolytic copper wires are welded
Wirewound Resistors, Industrial Power, Aluminum Housed, Chassis Mount
Wirewound Resistors, Industrial Power, Aluminum Housed, hassis Mount FEATURES Molded construction for total environmental protection omplete welded construction Meets applicable requirements of MIL-PRF-18546
Power MOSFET FEATURES. IRF520PbF SiHF520-E3 IRF520 SiHF520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.7 Q g (Max.) (nc) 16 Q gs (nc) 4.4 Q gd (nc) 7.7 Configuration Single TO0AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET
Metal Film Resistors, Pulse Withstanding Protective
End of Life - August 213 www.vishay.com Metal Film Resistors, Pulse Withstanding Protective STANDARD ELECTRICAL SPECIFICATIONS GLOBAL HISTORICAL POWER RATING P 7 C W FEATURES Special design provides lightning
High-Bandwidth, Low Voltage, Dual SPDT Analog Switches
DG, DG High-Bandwidth, Low Voltage, Dual SPDT Analog Switches DESCRIPTION The DG/DG are monolithic CMOS dual single-pole/double-throw (SPDT) analog switchs. They are specifically designed for low-voltage,
Power MOSFET. IRF9520PbF SiHF9520-E3 IRF9520 SiHF9520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS - 100 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 10 V 0.60 Q g (Max.) (nc) 18 Q gs (nc) 3.0 Q gd (nc) 9.0 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G S D PChannel
NTC Thermistors, Radial Leaded and Coated
M, C, T NTC Thermistors, Radial Leaded and Coated FEATURES Small size - conformally coated Wide resistance range Available in 11 different R-T curves Available in point matched and curve tracking precision
Schottky Rectifier, 1.0 A
Schottky Rectifier, 1.0 A VS-BQ060PbF Vishay High Power Products FEATURES Small foot print, surface mountable Low forward voltage drop SMB Cathode Anode High frequency operation Guard ring for enhanced
DG2515, DG2516. 3-Ω, 235-MHz Bandwidth, Dual SPDT Analog Switch. Vishay Siliconix. Not for New Design. RoHS COMPLIANT DESCRIPTION FEATURES BENEFITS
Not for New Design DG, DG -Ω, -MHz Bandwidth, Dual SPDT Analog Switch DESCRIPTION The DG, DG are low-voltage dual single-pole/ double-throw monolithic CMOS analog switches. Designed to operate from.8 V
SuperTan Extended (STE) Capacitors, Wet Tantalum Capacitors with Hermetic Seal
SuperTan Extended () Capacitors, Wet Tantalum Capacitors with Hermetic Seal FEATURES SuperTan Extended () represents a major breakthrough in wet tantalum capacitor Available technology. Its unique cathode
700 MHz, -3 db Bandwidth; Dual SPDT Analog Switch
7 MHz, -3 db Bandwidth; Dual SPDT Analog Switch DESCRIPTION is a low R ON, high bandwidth analog switch configured in dual SPDT. It achieves 5.5 Ω switch on resistance, greater than 7 MHz -3 db bandwidth
AC Line Rated Ceramic Disc Capacitors Class X1, 760 V AC, Class Y1, 500 V AC
AC Line Rated Ceramic Disc Capacitors Class X1, 760 V AC, Class Y1, 500 V AC QUICK REFERENCE DATA DESCRIPTION VALUE Ceramic Class 1 2 Ceramic Dielectric U2J U2J Y5S, Y5U Y5S, Y5U Voltage (V AC ) 500 760
Thick Film Resistor Networks, Dual-In-Line, Molded DIP
Thick Film Resistor Networks, Dual-In-Line, Molded DIP FEATURES Isolated, bussed, and dual terminator schematics available 0.160" (4.06 mm) maximum seated height and rugged, molded case construction Thick
MBA/SMA 0204, MBB/SMA 0207, MBE/SMA 0414 - Professional www.vishay.com. Professional Metal Film Leaded Resistors
,, - Professional Professional Metal Film Leaded Resistors DESCRIPTION,, and professional leaded thin film resistors are the general purpose resistor for all fields of professional electronics where reliability
Small Signal Fast Switching Diode
Small Signal Fast Switching Diode MECHANICAL DATA Case: SOD- Weight: approx.. mg Packaging codes/options: 8/K per " reel (8 mm tape), K/box 08/K per 7" reel (8 mm tape), K/box FEATURES Silicon epitaxial
Small Signal Fast Switching Diode FEATURES PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS
Small Signal Fast Switching Diode MARKING (example only) Bar = cathode marking XY = type code X Y 6 MECHANICAL DATA Case: SOD- Weight: approx.. mg Packaging codes/options: 8/K per " reel (8 mm tape), K/box
ESCC 4001/026 Qualified ( ) High Stability Thick Film Resistor Chips
ESCC 4001/026 Qualified ( ) High Stability Thick Film Resistor Chips thick film chip resistors are specially designed to meet the requirements of the ESA 4001/026 specification. They have undergone the
Aluminum Capacitors Solid Axial
SAL-A End of Life. Last Available Purchase Date is -December- Radial higher CV/volume Fig. QUICK REFERENCE DATA DESCRIPTION VALUE Maximum case size (Ø D x L in mm) 6.7 x. to.9 x. Rated capacitance range
Optocoupler, Phototransistor Output, with Base Connection
Optocoupler, Phototransistor Output, with Base Connection FEATURES i794-4 DESCRIPTION This datasheet presents five families of Vishay industry standard single channel phototransistor couplers. These families
Power MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) = 0.55 Q g (Max.) (nc) 63 Q gs (nc) 9.0 Q gd (nc) 3 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of
AC and Pulse Film Foil Capacitors KP Radial Potted Type
AC and Pulse Film Foil Capacitors KP Radial Potted Type 0.5 L max. W max. Marking H max. FEATURES 5 mm lead pitch, supplied loose in box taped in ammopack or reel Material categorization: for definitions
SMD Aluminum Solid Capacitors with Conductive Polymer
SMD Aluminum Solid Capacitors with Conductive Polymer FEATURES New OS-CON series provides improved characteristics with up to 25 C temperature capability and 35 V maximum voltage rating in a SMD package
Silicon PIN Photodiode
Silicon PIN Photodiode DESCRIPTION 94 8583 BPW34 is a PIN photodiode with high speed and high radiant sensitivity in miniature, flat, top view, clear plastic package. It is sensitive to visible and near
Electrical Double Layer Energy Storage Capacitors Power and Energy Versions
Electrical Double Layer Energy Storage Capacitors Power and Energy Versions FEATURES Polarized energy storage capacitor with high capacity and energy density Energy version with high stability available
Silicon PIN Photodiode
Silicon PIN Photodiode DESCRIPTION 94 8632 is a PIN photodiode with high speed and high radiant sensitivity in a clear, side view plastic package. It is sensitive to visible and near infrared radiation.
Metal Film Resistors, Industrial, Precision
CMF Industrial Metal Film Resistors, Industrial, Precision FEATURES Small size - conformal coated Flame retardant epoxy coating Controlled temperature coefficient Excellent high frequency characteristics
Power MOSFET FEATURES. IRF540PbF SiHF540-E3 IRF540 SiHF540. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.077 Q g (Max.) (nc) 72 Q gs (nc) 11 Q gd (nc) 32 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET
P6KE6.8A thru P6KE540A. TRANSZORB Transient Voltage Suppressors. Vishay General Semiconductor. www.vishay.com FEATURES PRIMARY CHARACTERISTICS
TRANSZORB Transient Voltage Suppressors DO-204AC (DO-15) PRIMARY CHARACTERISTICS V WM 5.8 V to 459 V V BR uni-directional 6.8 V to 540 V V BR bi-directional 6.8 V to 440 V P PPM 600 W P D 5.0 W I FSM (uni-directional
Thick Film Chip Resistors, Military/Established Reliability MIL-PRF-55342 Qualified, Type RM
Thick Film Chip Resistors, Military/Established Reliability -PRF-55342 Qualified, Type RM MATERIAL SPECIFICATIONS Resistive element Ruthenium oxide Encapsulation Epoxy Substrate 96 % alumina Termination
High Ohmic / High Voltage Metal Glaze Leaded Resistors
High Ohmic / High Voltage Metal Glaze Leaded Resistors A metal glazed film is deposited on a high grade ceramic body. After a helical groove has been cut in the resistive layer, tinned electrolytic copper
Ambient Light Sensor
TEPT56 Ambient Light Sensor DESCRIPTION 94 839 TEPT56 ambient light sensor is a silicon NPN epitaxial planar phototransistor in a T-1¾ package. It is sensitive to visible light much like the human eye
Solid Tantalum Surface Mount Capacitors TANTAMOUNT, Molded Case, Low ESR
Solid Tantalum Surface Mount Capacitors TANTAMOUNT, Molded Case, Low ESR Effective September 2005, new capacitor ratings will not be added to the series. All new ratings are available in the TR3 series.
High Ohmic/High Voltage Metal Glaze Leaded Resistors
High Ohmic/High Voltage FEATURES A metal glazed film is deposited on a high grade ceramic body. After a helical groove has been cut in the resistive layer, tinned electrolytic copper wires are welded to
Schottky Rectifier, 1.0 A
Schottky Rectifier, 1.0 A VS-BQ040-M3 Cathode Anode PRODUCT SUMMARY Package SMB I F(AV) 1.0 A V R 40 V V F at I F 0.38 V I RM 9 ma at 125 C T J max. 150 C Diode variation Single die E AS 3.0 mj FEATURES
Power MOSFET FEATURES. IRF9640PbF SiHF9640-E3 IRF9640 SiHF9640
Power MOSFET PRODUCT SUMMARY V DS (V) 200 R DS(on) (Ω) = 10 V 0.50 Q g (Max.) (nc) 44 Q gs (nc) 7.1 Q gd (nc) 27 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G S D
1/2" (12.7 mm) Conductive Plastic and Cermet Potentiometer
1/2" (12.7 mm) Conductive Plastic and Cermet Potentiometer FEATURES Robust construction High rotational life (50 000 cycles) Up to three sections PC support plates Rotary switches and solder lugs terminals
High Performance Schottky Rectifier, 3.0 A
High Performance Schottky Rectifier, 3. A Cathode Anode SMC PRODUCT SUMMARY Package SMC I F(AV) 3. A V R 4 V V F at I F.46 V I RM 3 ma at 25 C T J max. 5 C Diode variation Single die E AS 6. mj FEATURES
High Performance Schottky Rectifier, 1.0 A
High Performance Schottky Rectifier, 1. A VS-BQ3-M3 Cathode Anode SMB PRODUCT SUMMARY Package SMB I F(AV) 1. A V R 3 V V F at I F.42 V I RM max. 15 ma at 125 C T J max. 15 C Diode variation Single die
Surface Mount Multilayer Ceramic Chip Capacitors for Automotive Applications
Surface Mount Multilayer Ceramic Chip Capacitors for Automotive Applications FEATURES AEC-Q200 qualified with PPAP available Available in 0402 to 1812 body size Three dielectric materials AgPd termination
High Ohmic (up to 68 MΩ)/ High Voltage (up to 10 kv) Resistors
High Ohmic (up to 68 MΩ)/ A metal glazed film is deposited on a high grade ceramic body. After a helical groove has been cut in the resistive layer, tinned electrolytic copper wires are welded to the end-caps.
Silicon NPN Phototransistor
Silicon NPN Phototransistor DESCRIPTION 7 is a silicon NPN phototransistor with high radiant sensitivity in black, T-1¾ plastic package with base terminal and daylight blocking filter. Filter bandwidth
MCS 0402 AT, MCT 0603 AT, MCU 0805 AT, MCA 1206 AT - Precision www.vishay.com. Precision Thin Film Chip Resistors
Precision Thin Film Chip Resistors FEATURES Rated dissipation P 70 up to 0.4 W for size 1206 AEC-Q200 qualified Approved to EN 140401-801 Superior temperature cycling robustness Sulfur resistance verified
Type RP73 Series. SMD High Power Precision Resistors. Key Features. Applications. Characteristics - Electrical - RP73 Series - Standard
Key Features n High precision - tolerances down to 0.05% n Low TCR - down to 5ppm/ C n Stable high frequency performance n Operating temperature -55 C to +155 C n Increased power rating - up to 1.0W n
1.5KE6.8A thru 1.5KE540A, 1N6267A thru 1N6303A. TRANSZORB Transient Voltage Suppressors. Vishay General Semiconductor. www.vishay.
TRANSZORB Transient Voltage Suppressors Case Style.5KE FEATURES Glass passivated chip junction Available in uni-directional and bi-directional 500 W peak pulse power capability with a /0 μs waveform, repetitive
NTC Thermistors, Mini Lug Sensors
NTC Thermistors, Mini Lug Sensors QUICK REFERENCE DATA PARAMETER VALUE UNIT Resistance value at 25 C 10K to 47K Tolerance on R 25 -value ± 2 to ± 3 % B 25/85 -value 3740 to 3984 K Tolerance on B 25/85
Silicon PIN Photodiode
VEMD940F Silicon PIN Photodiode DESCRIPTION VEMD940F is a high speed and high sensitive PIN photodiode in a miniature side looking, surface mount package (SMD) with daylight blocking filter. Filter is
High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW
High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW DESCRIPTION is an infrared, 940 nm side looking emitting diode in GaAlAs multi quantum well (MQW) technology with high radiant power and high speed,
Dual P-Channel 2.5 V (G-S) MOSFET
Si593DC Dual P-Channel.5 V (G-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).55 at V GS = -.5 V ±.9 -.8 at V GS = - 3.6 V ±.7.6 at V GS = -.5 V ±. FEATURES Halogen-free According to IEC 69-- Definition
Optocoupler, Phototransistor Output, Dual Channel, SOIC-8 Package
ILD25T, ILD26T, ILD27T, ILD211T, ILD213T Optocoupler, Phototransistor Output, Dual Channel, SOIC-8 Package i17925 A1 C2 A3 C4 i17918-2 8C 7E 6C 5E DESCRIPTION The ILD25T, ILD26T, ILD27T, ILD211T, and ILD213T
High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW
High Power Infrared Emitting Diode, 94 nm, GaAlAs, MQW DESCRIPTION 94 8389 is an infrared, 94 nm emitting diode in GaAlAs multi quantum well (MQW) technology with high radiant power and high speed molded
1 Form A Solid State Relay
Form A Solid State Relay VOAT, VOAABTR FEATURES 9 S S DC S' 3 S' High speed SSR - t on /t off < 8 μs Maximum R ON. Isolation test voltage 3 V RMS Load voltage V Load current A DC configuration DIP- package
Optocoupler, Phototransistor Output, with Base Connection
4N25, 4N26, 4N27, 4N28 Optocoupler, Phototransistor Output, FEATURES A 6 B Isolation test voltage 5000 V RMS Interfaces with common logic families C 2 5 C Input-output coupling capacitance < pf NC 3 4
FEATURES BODY DIA. MAX. Type M AWG 30: 0.0100 [0.254] Type C AWG 28: 0.0126 [0.320] Type T AWG 30: 0.0100 [0.254]
M, C, T NTC Thermistors, Coated FEATURES Small size - conformally coated. Wide resistance range. Available in 11 different R-T curves. DESCRIPTION Models M, C, and T are conformally coated, leaded thermistors
UV SMD LED PLCC-2 FEATURES APPLICATIONS. at I F (ma) (ma) MIN. TYP. MAX. MIN. TYP. MAX. MIN. TYP. MAX.
UV SMD LED PLCC-2 VLMU31 19225 DESCRIPTION The package of the VLMU31-series is the PLCC-2. It consists of a lead frame which is embedded in a white thermoplast. The reflector inside this package is filled
Low Current SMD LED PLCC-2
Low Current SMD LED PLCC-2 VLMC31. 19225 DESCRIPTION These new devices have been designed to meet the increasing demand for low current SMD LEDs. The package of the VLMC31. is the PLCC-2 (equivalent to
SMD High Power Precision Resistors
Key Features High precision - TCR 5ppm/ C and 10ppm/ C Tolerance down to 0.01% Thin film (nichrome) Choice of packages Stable high frequency performance Temperature range -55 C to +155 C Applications Communications
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
TSAL64 High Power Infrared Emitting Diode, 94 nm, GaAlAs/GaAs DESCRIPTION 94 8389 TSAL64 is an infrared, 94 nm emitting diode in GaAlAs/GaAs technology with high radiant power molded in a blue-gray plastic
1 Form A Solid State Relay
1 Form A Solid State Relay Vishay Semiconductors DIP i1791- SMD DESCRIPTION Vishay solid state relays (SSRs) are miniature, optically coupled relays with high-voltage MOSFET outputs. The LH1518 relays
VJ 6040 UHF Chip Antenna for Mobile Devices
VJ 64 UHF Chip Antenna for Mobile Devices VJ 64 The company s products are covered by one or more of the following: WO2862 (A1), US2833 (A1), US283575 (A1), WO281173 (A1). Other patents pending. DESCRIPTION
P-Channel 20 V (D-S) MOSFET
Si30CDS P-Channel 0 V (D-S) MOSFET MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.) - 0 0. at V GS = - 4.5 V - 3. 0.4 at V GS = -.5 V -.7 3.3 nc TO-36 (SOT-3) FEATURES Halogen-free According
Optocoupler, Phototransistor Output, with Base Connection, 300 V BV CEO
SFH64 Optocoupler, Phototransistor Output, with Base Connection, 3 V BV CEO i1794-3 DESCRIPTION The SFH64 is an optocoupler with very high BV CER, a minimum of 3 V. It is intended for telecommunications
Precision Leaded Resistors
FEATURES Approved according to CECC 40101-806 Advanced thin film technology Low TC: ± 15 to Precision tolerance of value: ± 0.1 % and ± 0.25 % Superior overall : class 0.05 Wide precision range: 10 Ω to
