Optocoupler, Phototransistor Output (Dual, Quad Channel)

Transcription

1 Optocoupler, Phototransistor Output (Dual, Quad hannel) Dual hannel E FETURES urrent transfer ratio at I F = m E 6 E Isolation test voltage, 5300 V RMS ompliant to RoHS Directive 2002/95/E and in accordance to WEEE 2002/96/E GENY PPROVLS Quad hannel i V D E 3 E 2 E 9 E UL577, file no. E52744 system code H, double protection S 9375 BSI IE 60950; IE DIN EN (VDE 0884) available with option FIMKO i7902- DESRIPTION The are optically coupled isolated pairs employing Gas infrared LEDs and silicon NPN phototransistor. Signal information, including a D level, can be transmitted by the drive while maintaining a high degree of electrical isolation between input and output. The are especially designed for driving medium-speed logic and can be used to eliminate troublesome ground loop and noise problems. lso these couplers can be used to replace relays and transformers in many digital interface applications such as TR modulation. The ILD, ILD2, ILD5 has two isolated channels in a single DIP package and the ILQ, ILQ2, ILQ5 has four isolated channels per package. ORDERING INFORMTION I L x # - X 0 # # T DIP-# Option 6 PRT NUMBER x = D (Dual) or Q (Quad) PKGE OPTION TPE ND REEL 7.62 mm Option 7.6 mm Option 9 > 0.7 mm > 0. mm GENY ERTIFIED/PKGE DUL HNNEL QUD HNNEL TR (%) UL, S, BSI, FIMKO 20 to 300 to to to 300 to to 400 DIP-8 ILD ILD2 ILD DIP-8, 400 mil, option 6 - ILD2-X SMD-8, option 7 ILD-X007T () ILD2-X007T () SMD-8, option 9 ILD-X009T () ILD2-X009T () ILD5-X009T () DIP ILQ ILQ2 ILQ5 DIP-6, 400 mil, option ILQ-X006 ILQ2-X006 - SMD-6, option ILQ-X007 ILQ2-X007T () - SMD-6, option ILQ-X009T () ILQ2-X009T () ILQ5-X009T () Rev..8, 28-Jun- Document Number: 83646

2 GENY ERTIFIED/PKGE DUL HNNEL QUD HNNEL TR (%) VDE, UL, S, BSI, FIMKO 20 to 300 to to to 300 to to 400 DIP-8 ILD-X00 ILD2-X00 ILD5-X DIP-8, 400 mil, option 6 - ILD2-X SMD-8, option 7 - ILD2-X SMD-8, option 9 ILD-X09T DIP ILQ2-X00 - DIP-6, 400 mil, option ILQ2-X06 - SMD-6, option ILQ2-X07T () - Notes dditional options may be possible, please contact sales office. () lso available in tubes; do not put T on end. BSOLUTE MXIMUM RTINGS (T amb = 25, unless otherwise specified) PRMETER TEST ONDITION PRT SYMBOL VLUE UNIT INPUT Reverse voltage V R 6 V Forward current I F 60 m Surge current I FSM 2.5 Power dissipation P diss mw Derate linearly from 25.3 mw/ OUTPUT ollector emitter reverse voltage ILD V EO 50 V ILQ V EO 50 V ILD2 V EO 70 V ILQ2 V EO 70 V ILD5 V EO 70 V ILQ5 V EO 70 V ollector current I 50 m t < ms I 400 m Power dissipation P diss 200 mw Derate lineary from mw/ OUPLER Isolation test voltage between emitter and detector V ISO 5300 V RMS reepage distance 7 mm learance distance 7 mm Isolation resistance V IO = 500 V, T amb = 25 R IO 2 V IO = 500 V, T amb = R IO Package power dissipation P tot 250 mw Derate linearly from mw/ Storage temperature T stg - 40 to + 50 Operating temperature T amb - 40 to + Junction temperature T j Soldering temperature (2) 2 mm from case bottom T sld 260 Notes Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. () Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for throught hole devices (DIP). Rev..8, 28-Jun- 2 Document Number: 83646

3 ELETRIL HRTERISTIS (T amb = 25, unless otherwise specified) PRMETER TEST ONDITION SYMBOL MIN. TYP. MX. UNIT INPUT Forward voltage I F = 60 m V F V Reverse current V R = 6 V I R 0.0 μ apacitance V R = 0 V, f = MHz O 25 pf Thermal resistance, junction to lead T thjl 750 K/W OUTPUT ollector emitter capacitance V E = 5 V, f = MHz E 6.8 pf ollector emitter leakage current V VE = V I EO 5 50 n Saturation voltage, collector emitter I = m, I B = 20 μ V EST V D forward current gain V E = V, I B = 20 μ h FE D forward current gain saturated V E = 0.4 V, I B = 20 μ h FEsat Thermal resistance, junction to lead R thjl 500 K/W OUPLER apacitance (input to output) V IO = 0 V, f = MHz IO 0.8 pf Note Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. URRENT TRNSFER RTIO (T amb = 25, unless otherwise specified) PRMETER TEST ONDITION PRT SYMBOL MIN. TYP. MX. UNIT I /I F (collector emitter saturated) I F = m, V E = 0.4 V I F = m, V E = V ILD TR Esat 75 % ILQ TR Esat 75 % ILD2 TR Esat 70 % ILQ2 TR Esat 70 % ILD5 TR Esat % ILQ5 TR Esat % ILD TR E % ILQ TR E % ILD2 TR E % ILQ2 TR E % ILD5 TR E % ILQ5 TR E % Rev..8, 28-Jun- 3 Document Number: 83646

4 SFETY ND INSULTION RTINGS PRMETER TEST ONDITION SYMBOL MIN. TYP. MX. UNIT Isolation test voltage between emitter and detector V ISO 5300 V RMS Isolation resistance V IO = 500 V, T amb = 25 2 R IO V IO = 500 V, T amb = limatic classification (according to IE 68 part ) 55//2 omparative tracking index TI 75 Rated impulse voltage V IOTM kv Maximum working voltage Recurring peak voltage V IORM 890 V Forward current I SI 275 m Power dissipation P SO 400 mw Safety temperature T SI 75 reepage distance 7.0 mm learance distance 7.0 mm Insulation distance per IE mm Note ccording to DIN EN (VDE 0884) (see figure 2). These optocouplers are suitable for safety electrical insulation only within the safety ratings. ompliance with the safety ratings shall be ensured by means of suitable protective circuits Phototransistor P SO (mw) V IOTM t, t 2 = s to s t 3, t 4 = s t test = s t stres = 2 s 250 V pd IR-diode I SI (m) V IOWM V IORM T SI - Safety Temperature ( ) t t Tr = 60 s t 3 t test t 4 t 2 t stres t Fig. - Derating Diagram Fig. 2 - Test Pulse Diagram for Sample Test according to DIN EN (VDE 0884); IE Rev..8, 28-Jun- 4 Document Number: 83646

5 SWITHING HRTERISTIS (T amb = 25, unless otherwise specified) PRMETER TEST ONDITION PRT SYMBOL MIN. TYP. MX. UNIT NON-STURTED ILD I F 20 m ILQ I F 20 m urrent V E = 5 V, R L = 75, 50 % of V PP ILD2 I F 5 m ILQ2 I F 5 m ILD5 I F m ILQ5 I F m ILD t D 0.8 μs ILQ t D 0.8 μs Delay V E = 5 V, R L = 75, 50 % of V PP ILD2 t D.7 μs ILQ2 t D.7 μs ILD5 t D.7 μs ILQ5 t D.7 μs ILD t r.9 μs ILQ t r.9 μs Rise time V E = 5 V, R L = 75, 50 % of V PP ILD2 t r 2.6 μs ILQ2 t r 2.6 μs ILD5 t r 2.6 μs ILQ5 t r 2.6 μs ILD t s 0.2 μs ILQ t s 0.2 μs Storage V E = 5 V, R L = 75, 50 % of V PP ILD2 t s 0.4 μs ILQ2 t s 0.4 μs ILD5 t s 0.4 μs ILQ5 t s 0.4 μs ILD t f.4 μs ILQ t f.4 μs Fall time V E = 5 V, R L = 75, 50 % of V PP ILD2 t f 2.2 μs ILQ2 t f 2.2 μs ILD5 t f 2.2 μs ILQ5 t f 2.2 μs ILD t PHL 0.7 μs ILQ t PHL 0.7 μs Propagation H to L V E = 5 V, R L = 75, 50 % of V PP ILD2 t PHL.2 μs ILQ2 t PHL.2 μs ILD5 t PHL. μs ILQ5 t PHL. μs ILD t PLH.4 μs ILQ t PLH.4 μs Propagation L to H V E = 5 V, R L = 75, 50 % of V PP ILD2 t PLH 2.3 μs ILQ2 t PLH 2.3 μs ILD5 t PLH 2.5 μs ILQ5 t PLH 2.5 μs Rev..8, 28-Jun- 5 Document Number: 83646

6 SWITHING HRTERISTIS (T amb = 25, unless otherwise specified) PRMETER TEST ONDITION PRT SYMBOL MIN. TYP. MX. UNIT STURTED urrent Delay Rise time Storage Fall time Propagation H to L Propagation L to H V E = 0.4 V, R L = k, V = 5 V, V E = 0.4 V, R L = k, V = 5 V, V E = 0.4 V, R L = k, V = 5 V, V E = 0.4 V, R L = k, V = 5 V, V E = 0.4 V, R L = k, V = 5 V, V E = 0.4 V, R L = k, V = 5 V, V E = 0.4 V, R L = k, V = 5 V, ILD I F 20 m ILQ I F 20 m ILD2 I F 5 m ILQ2 I F 5 m ILD5 I F m ILQ5 I F m ILD t D 0.8 μs ILQ t D 0.8 μs ILD2 t D μs ILQ2 t D μs ILD5 t D.7 μs ILQ5 t D.7 μs ILD t r.2 μs ILQ t r.2 μs ILD2 t r 2 μs ILQ2 t r 2 μs ILD5 t r 7 μs ILQ5 t r 7 μs ILD t s 7.4 μs ILQ t s 7.4 μs ILD2 t s 5.4 μs ILQ2 t s 5.4 μs ILD5 t s 4.6 μs ILQ5 t s 4.6 μs ILD t f 7.6 μs ILQ t f 7.6 μs ILD2 t f 3.5 μs ILQ2 t f 3.5 μs ILD5 t f 20 μs ILQ5 t f 20 μs ILD t PHL.6 μs ILQ t PHL.6 μs ILD2 t PHL 5.4 μs ILQ2 t PHL 5.4 μs ILD5 t PHL 2.6 μs ILQ5 t PHL 2.6 μs ILD t PLH 8.6 μs ILQ t PLH 8.6 μs ILD2 t PLH 7.4 μs ILQ2 t PLH 7.4 μs ILD5 t PLH 7.2 μs ILQ5 t PLH 7.2 μs Rev..8, 28-Jun- 6 Document Number: 83646

7 OMMON MODE TRNSIENT IMMUNITY (T amb = 25, unless otherwise specified) PRMETER TEST ONDITION SYMBOL MIN. TYP. MX. UNIT ommon mode rejection, output high V M = 50 V P-P, R L = k I F = 0 m M H 5000 V/μs ommon mode rejection, output low V M = 50 V P-P, R L = k I F = m M L 5000 V/μs ommon mode coupling capacitance M 0.0 pf TYPIL HRTERISTIS (T amb = 25, unless otherwise specified) V = 5 V f = KHz, DF = 50 % V = 5 V I F = m R L V O I F = m V O f = khz, DF = 50 % R L = 75 Ω iild_03 iild_0 Fig. 3 - Non-Saturated Switching Schematic Fig. 5 - Saturated Switching Schematic I F I F t D V O t PLH tphl V O t R t PLH t S 50 % t PHL t S t F iild_02 t D t R t F iild_04 Fig. 4 - Non-Saturated Switching Timing Fig. 6 - Saturated Switching Timing Rev..8, 28-Jun- 7 Document Number: 83646

8 - Forward Voltage (V) V F iild_05 T = - 55 T = 25 T = I F - Forward urrent (m) TR - Normalized TR Factor iild_08 0. Normalized to: V E = V, I F = m T = 25 TR ce(sat ) V E = 0.4 V T = 70 NTR NTR(ST) I F - LED urrent (m) Fig. 7 - Normalized Non-Saturated and Saturated TR vs. LED urrent Fig. - Normalized Non-Saturated and Saturated TR vs. LED urrent TRNF - Normalized TR Factor iild_06 Normalized to: V E = V,I F = m T = 25 TR ce(sat) V E = 0.4 V NTR NTR (ST) I F - LED urrent (m) NTR - Normalized TR.5 Normalized to: V E = V, I F = m, T = 25 TRce(sat) V E = 0.4 V.0 T = 85 NTR 0.5 NTR(ST) iild_09 I F - LED urrent (m) Fig. 8 - Normalized Non-Saturated and Saturated TR vs. LED urrent Fig. - Normalized Non-Saturated and Saturated TR vs. LED urrent TRNF - Normalized TR Factor iild_07 Normalized to: V E =V, I F = m,t = 25 TR ce(sat) V E = 0.4 V T = 50 NTR NTR (ST) I F - LED urrent (m) I E - ollector urrent (m) iild_ I - LED urrent (m) F Fig. 9 - Normalized Non-Saturated and Saturated TR vs. LED urrent Fig. 2 - ollector Emitter urrent vs. Temperature and LED urrent Rev..8, 28-Jun- 8 Document Number: 83646

9 I EO - ollector Emitter (n) iild_ V ce = V Typical T - mbient Temperature ( ) tplh - Propagation Low-High (µs) 0 iild_2 0. T = 25, I F = m V cc = 5 V, V th =.5 V t phl t plh R L - ollector Load Resistor (kω) t phl - Propagation High-Low (µs) Fig. 3 - ollector Emitter Leakage urrent vs.temperature Fig. 4 - Propagation Delay vs. ollector Load Resistor PKGE DIMENSIONS in millimeters Pin one ID ± ISO method 9.77 ± ± typ typ ± ± ± to ± ± i typ ± 0.05 Rev..8, 28-Jun- 9 Document Number: 83646

10 PKGE DIMENSIONS in millimeters Pin one ID ISO method typ i typ to 9 typ Option 6 Option 7 Option typ ref min. 8.4 min..3 max min typ. 5 max. 0. (2.54) R 0.0 (0.25) 0.35 (8.00) min (.05) (0.76) (.78) (.52) (0.76) 0. (2.54) R 0.0 (0.25) (.78) (8.00) min (.05) (.52) PKGE MRKING (example) ILD2 ILQ2 V YWW H 68 V YWW H 68 Notes Only option and 7 reflected in the package marking. The VDE logo is only marked on option parts. Tape and reel suffix (T) is not part of the package marking. Rev..8, 28-Jun- Document Number: 83646

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