FQP10N60C / FQPF10N60C 600V N-Channel MOSFET Features 9.5A, 600V, R DS(on) = 0.73Ω @V GS = 10 V Low gate charge ( typical 44 nc) Low Crss ( typical 18 pf) Fast switching 100% avalanche tested Improved dv/dt capability G D S TO-220 FQP Series GD S Description April 2007 QFET These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. TO-220F FQPF Series G S D Absolute Maximum Ratings Symbol Parameter FQP10N60C FQPF10N60C Units S Drain-Source Voltage 600 V Drain Current - Continuous (T C = 25 C) 9.5 9.5 * A - Continuous (T C = 100 C) 5.7 5.7 * A M Drain Current - Pulsed (Note 1) 38 38 * A V GSS Gate-Source Voltage ± 30 V E AS Single Pulsed Avalanche Energy (Note 2) 700 mj I AR Avalanche Current (Note 1) 9.5 A E AR Repetitive Avalanche Energy (Note 1) 15.6 mj dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P D Power Dissipation (T C = 25 C) 156 50 W - Derate above 25 C 1.25 0.4 W/ C T J, T STG Operating and Storage Temperature Range -55 to +150 C T L Maximum lead temperature for soldering purposes, 300 C 1/8 from case for 5 seconds * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter FQP10N60C FQPF10N60C Units R θjc Thermal Resistance, Junction-to-Case 0.8 2.5 C/W R θcs Thermal Resistance, Case-to-Sink Typ. 0.5 -- C/W R θja Thermal Resistance, Junction-to-Ambient 62.5 62.5 C/W 2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FQP10N60C FQP10N60C TO-220 -- -- 50 FQPF10N60C FQPF10N60C TO-220F -- -- 50 Electrical Characteristics T C = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BS Drain-Source Breakdown Voltage V GS = 0 V, = 250 µa 600 -- -- V BS / T J Breakdown Voltage Temperature Coefficient = 250 µa, Referenced to 25 C -- 0.7 -- V/ C SS Zero Gate Voltage Drain Current = 600 V, V GS = 0 V -- -- 1 µa = 480 V, T C = 125 C -- -- 10 µa I GSSF Gate-Body Leakage Current, Forward V GS = 30 V, = 0 V -- -- 100 na I GSSR Gate-Body Leakage Current, Reverse V GS = -30 V, = 0 V -- -- -100 na On Characteristics V GS(th) Gate Threshold Voltage = V GS, = 250 µa 2.0 -- 4.0 V R DS(on) Static Drain-Source On-Resistance V GS = 10 V, = 4.75 A -- 0.6 0.73 Ω g FS Forward Transconductance = 40 V, = 4.75 A (Note 4) -- 8.0 -- S Dynamic Characteristics C iss Input Capacitance = 25 V, V GS = 0 V, -- 1570 2040 pf C oss Output Capacitance f = 1.0 MHz -- 166 215 pf C rss Reverse Transfer Capacitance -- 18 24 pf Switching Characteristics t d(on) Turn-On Delay Time V DD = 300 V, = 9.5A, -- 23 55 ns t r Turn-On Rise Time R G = 25 Ω -- 69 150 ns t d(off) Turn-Off Delay Time -- 144 300 ns t f Turn-Off Fall Time (Note 4, 5) -- 77 165 ns Q g Total Gate Charge = 480 V, = 9.5A, -- 44 57 nc Q gs Gate-Source Charge V GS = 10 V -- 6.7 -- nc Q gd Gate-Drain Charge (Note 4, 5) -- 18.5 -- nc Drain-Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain-Source Diode Forward Current -- -- 9.5 A I SM Maximum Pulsed Drain-Source Diode Forward Current -- -- 38 A V SD Drain-Source Diode Forward Voltage V GS = 0 V, I S = 9.5 A -- -- 1.4 V t rr Reverse Recovery Time V GS = 0 V, I S = 9.5 A, -- 420 -- ns Q rr Reverse Recovery Charge di F / dt = 100 A/µs (Note 4) -- 4.2 -- µc Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 14.2mH, I AS = 9.5 A, V DD = 50V, R G = 25 Ω, Starting T J = 25 C 3. I SD 9.5A, di/dt 200A/µs, V DD BS, Starting T J = 25 C 4. Pulse Test : Pulse width 300µs, Duty cycle 2% 5. Essentially independent of operating temperature 2 www.fairchildsemi.com
Typical Performance Characteristics Figure 1. On-Region Characteristics 10 1 V GS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V 10 1, Drain-Source Voltage [V] 1. 250µs Pulse Test 2. T C = 25 C Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 2.0 Figure 2. Transfer Characteristics 10 1 150 C 25 C -55 C 1. = 40V 2. 250µs Pulse Test 2 4 6 8 10 V GS, Gate-Source Voltage [V] Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue R DS(ON) [Ω], Drain-Source On-Resistance 1.5 1.0 0.5 V GS = 10V V GS = 20V * Note : T J = 25 C 0.0 0 5 10 15 20 25 30 35 R, Reverse Drain Current [A] 10 1 150 C 25 C 1. V GS = 0V 2. 250µs Pulse Test 0.2 0.4 0.6 0.8 1.0 1.2 1.4 V SD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 3000 C iss = C gs + C gd (C ds = shorted) 12 Capacitance [pf] 2500 2000 1500 1000 500 C iss C oss C rss C oss = C ds + C gd C rss = C gd 0 10 1, Drain-Source Voltage [V] * Notes ; 1. V GS = 0 V 2. f = 1 MHz V GS, Gate-Source Voltage [V] 10 8 6 4 2 = 300V = 480V = 120V * Note : = 9.5A 0 0 10 20 30 40 50 Q G, Total Gate Charge [nc] 3 www.fairchildsemi.com
Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs. Temperature vs. Temperature BS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 1. V GS = 0 V 2. = 250µA 0.8-100 -50 0 50 100 150 200 T J, Junction Temperature [ C] 0.0-100 -50 0 50 100 150 200 T J, Junction Temperature [ C] Figure 9-1. Maximum Safe Operating Area Figure 9-2. Maximum Safe Operating Area for FQP10N60C for FQPF10N60C 10 2 10 1 Operation in This Area is Limited by R DS(on) 1 ms 10 ms 100 ms DC 1. T C = 25 C 2. T J = 150 C 3. Single Pulse 100 µs 10 µs 10 1 10 2 10 3, Drain-Source Voltage [V] R DS(ON), (Normalized) Drain-Source On-Resistance 3.0 2.5 2.0 1.5 1.0 0.5 10 2 10 1 10-2 Operation in This Area is Limited by R DS(on) 1. T C = 25 C 2. T J = 150 C 3. Single Pulse 1. V GS = 10 V 2. = 4.75 A 10 µs 100 µs 1 ms 10 ms 100 ms DC 10 1 10 2 10 3, Drain-Source Voltage [V] Figure 10. Maximum Drain Current vs. Case Temperature 10 8 6 4 2 0 25 50 75 100 125 150 T C, Case Temperature [ C] 4 www.fairchildsemi.com
Typical Performance Characteristics (Continued) Figure 11-1. Transient Thermal Response Curve for FQP10N60C Z θjc (t), Thermal Response 10-2 D=0.5 0.2 0.1 0.05 0.02 0.01 single pulse * N otes : 1. Z θ JC (t) = 0.8 C/W Max. 2. D uty F actor, D = t 1 /t 2 3. T JM - T C = P DM * Z θ JC (t) 10-5 10-4 10-3 10-2 10 1 t 1, Square W ave Pulse Duration [sec] Figure 11-2. Transient Thermal Response Curve for FQPF10N60C P DM t 1 t 2 D=0.5 Z θjc (t), Thermal Response 0.2 0.1 0.05 0.02 0.01 single pulse * N otes : 1. Z θ JC (t) = 2.5 C /W Max. 2. D uty F actor, D = t 1 /t 2 3. T JM - T C = P DM * Z θ JC (t) P DM t 1 t 2 10-2 10-5 10-4 10-3 10-2 10 1 t 1, S quare W ave P ulse D uration [sec] 5 www.fairchildsemi.com
Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 6 www.fairchildsemi.com
Peak Diode Recovery dv/dt Test Circuit & Waveforms 7 www.fairchildsemi.com
Mechanical Dimensions (1.70) 13.08 ±0.20 9.20 ±0.20 1.30 ±0.10 (1.46) (1.00) 1.27 ±0.10 9.90 ±0.20 (8.70) ø3.60 ±0.10 (45 ) (3.00) (3.70) 1.52 ±0.10 TO-220 15.90 ±0.20 2.80 ±0.10 10.08 ±0.30 18.95MAX. 4.50 ±0.20 1.30 +0.10 0.05 2.54TYP [2.54 ±0.20] 0.80 ±0.10 2.54TYP [2.54 ±0.20] 0.50 +0.10 0.05 2.40 ±0.20 10.00 ±0.20 Dimensions in Millimeters 8 www.fairchildsemi.com
Mechanical Dimensions (Continued) 15.80 ±0.20 3.30 ±0.10 TO-220F 10.16 ±0.20 ø3.18 ±0.10 2.54 ±0.20 (7.00) (0.70) 6.68 ±0.20 (1.00x45 ) 15.87 ±0.20 9.75 ±0.30 MAX1.47 0.80 ±0.10 (30 ) 0.35 ±0.10 #1 0.50 +0.10 0.05 2.76 ±0.20 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 Dimensions in Millimeters 9 www.fairchildsemi.com
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