BC640 PNP Epitaxial Silicon Transistor Switching and Amplifier Applications Complement to BC639 TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings T a = 25 C unless otherwise noted Symbol Parameter Value Units V CER Collector-Emitter Voltage at R BE =1KΩ -100 V V CES Collector-Emitter Voltage -100 V V CEO Collector-Emitter Voltage -80 V V EBO Emitter-Base Voltage -5 V I C Collector Current -1 A I CP Peak Collector Current -1.5 A I B Base Current -100 ma P C Collector Power Dissipation 1 W T J Junction Temperature 150 C T STG Storage Temperature -65 ~ 150 C Electrical Characteristics T a = 25 C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BV CEO Collector-Emitter Breakdown Voltage I C = -10mA, I B =0-80 V I CBO Collector Cut-off Current V CB = -30V, I E =0-0.1 µa I EBO Emitter Cut-off Current V EB = -5V, I C =0-0.1 µa h FE1 DC Current Gain V CE = -2V, I C = -5mA 25 h FE2 h FE3 V CE = -2V, I C = -150mA V CE = -2V, I C = -500mA 40 25 160 V CE (sat) Collector-Emitter Saturation Voltage I C = -500mA, I B = -50mA -0.5 V V BE (on) Base-Emitter On Voltage V CE = -2V, I C = -500mA -1 V f T Current Gain Bandwidth Product V CE = -5V, I C = -10mA, f=50mhz 100 MHz 2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity BC640 BC640BU TO-92 -- -- 10,000 BC640 BC640TA TO-92 -- -- 2,000 BC640 BC640TAR TO-92 -- -- 2,000 BC640 BC640TF TO-92 -- -- 2,000 BC640 BC640TFR TO-92 -- -- 2,000 2 www.fairchildsemi.com
Typical Performance Characteristics Figure 1. Static Characteristic -500-400 -300-200 -100 IB = - 1.8 ma IB = - 1.6 ma IB = - 1.4 ma IB = - 1.2 ma IB = - 1.0 ma IB = - 0.8 ma IB = - 0.6 ma IB = - 0.4 ma IB = - 0.2 ma -0-0 -10-20 -30-40 -50 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 2. DC Current Gain hfe, DC CURRENT GAIN 1000 100 10-1 -10-100 -1000 VCE = - 2V Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage VBE(sat), VCE(sat)[V], SATURATION VOLTAGE -10-1 -0.1 VBE(sat) VCE(sat) IC = 10 IB -0.01-1 -10-100 -1000-1000 -100-10 -1 VCE = - 2V -0.2-0.4-0.6-0.8-1.0-1.2 VBE[V], BASE-EMITTER VOLTAGE Figure 5. Collector Output Capacitance 100 f=1mhz Cob[pF], CAPACITANCE 10 1-1 -10-100 VCB[V], COLLECTOR-BASE VOLTAGE 3 www.fairchildsemi.com
Mechanical Dimensions 3.86MAX 0.46 ±0.10 1.27TYP [1.27 ±0.20] 1.02 ±0.10 0.38 +0.10 0.05 4.58 +0.25 0.15 3.60 ±0.20 1.27TYP [1.27 ±0.20] (R2.29) TO-92 (0.25) 14.47 ±0.40 4.58 ±0.20 0.38 +0.10 0.05 Dimensions in Millimeters 4 www.fairchildsemi.com
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