TO-92 SOT-23 Mark: 3E. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
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1 MPSH1 MMBTH1 C MPSH1 / MMBTH1 C E B TO-92 SOT-23 Mark: 3E B E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 1 µa to 2 ma range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units V CEO Collector-Emitter Voltage 25 V V CBO Collector-Base Voltage 3 V V EBO Emitter-Base Voltage 3. V I C Collector Current - Continuous 5 ma T J, T stg Operating and Storage Junction Temperature Range -55 to +15 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 15 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25 C unless otherwise noted Symbol Characteristic Max Units MPSH1 *MMBTH1 P D Total Device Dissipation Derate above 25 C mw mw/ C R θjc Thermal Resistance, Junction to Case 125 C/W R θja Thermal Resistance, Junction to Ambient C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X.6." 1997 Fairchild Semiconductor Corporation
2 Electrical Characteristics TA = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Max Units OFF CHARACTERISTICS NPN RF Transistor (continued) V (BR)CEO Collector-Emitter Sustaining Voltage* I C = 1. ma, I B = 25 V V (BR)CBO Collector-Base Breakdown Voltage I C = 1 µa, I E = 3 V V (BR)EBO Emitter-Base Breakdown Voltage I E = 1 µa, I C = 3. V I CBO Collector Cutoff Current V CB = 25 V, I E = 1 na I EBO Emitter Cutoff Current V EB = 2. V, I C = 1 na MPSH1 / MMBTH1 ON CHARACTERISTICS h FE DC Current Gain I C = 4. ma, V CE = 1 V 6 V CE(sat) Collector-Emitter Saturation Voltage I C = 4. ma, I B =.4 ma.5 V V BE(on) Base-Emitter On Voltage I C = 4. ma, V CE = 1 V.95 V SMALL SIGNAL CHARACTERISTICS f T Current Gain - Bandwidth Product I C = 4. ma, V CE = 1 V, 65 MHz f = 1 MHz C cb Collector-Base Capacitance V CB = 1 V, I E =, f = 1. MHz.7 pf C rb Common-Base Feedback Capacitance V CB = 1 V, I E =, f = 1. MHz pf rb C c Collector Base Time Constant I C = 4. ma, V CB = 1 V, f = 31.8 MHz *Pulse Test: Pulse Width 3 µs, Duty Cycle 2.% 9. ps 3 Spice Model NPN (Is=69.28E-18 Xti=3 Eg=1.11 Vaf=1 Bf=38.6 Ne=1.197 Ise=69.28E-18 Ikf=22.83m Xtb=1.5 Br=1.11 Nc=2 Isc= Ikr= Rc=4 Cjc=1.42p Mjc=.2468 Vjc=.75 Fc=.5 Cje=1.52p Mje=.3223 Vje=.75 Tr=1.558n Tf=135.8p Itf=.27 Vtf=1 Xtf=3 Rb=1)
3 Typical Characteristics h - TYPICAL PULSED CURRENT GAIN FE Typical Pulsed Current Gain vs Collector Current V CE = 5V 125 C 25 C - 4 C I - COLLECTOR CURRENT (ma) C V - COLLECTOR-EMITTER VOLTAGE (V) CESAT Collector-Emitter Saturation Voltage vs Collector Current β = 1-4 C 25 C I - COLLECTOR CURRENT (ma) C NPN RF Transistor (continued) 125 C MPSH1 / MMBTH1 V - BASE-EMITTER VOLTAGE (V) BESAT Base-Emitter Saturation Voltage vs Collector Current β = I - COLLECTOR CURRENT (ma) C - 4 C 25 C 125 C V - BASE-EMITTER ON VOLTAGE (V) BE (ON) Base-Emitter ON Voltage vs Collector Current V = 5V CE I - COLLECTOR CURRENT (ma) C - 4 C 25 C 125 C I - COLLECTOR CURRENT (na) CBO 1 1 V Collector-Cutoff Current vs Ambient Temperature CB = 3V T A - AMBIENT TEMPERATURE ( C) P - POWER DISSIPATION (mw) D SOT-23 Power Dissipation vs Ambient Temperature TO o TEMPERATURE ( C)
4 Common Base Y Parameters vs. Frequency Y - INPUT ADMITTANCE (mmhos) ib V CE = 1V I C = 5 ma Input Admittance b ib g ib Y - OUTPUT ADMITTANCE (mmhos) ob V CE = 1V I C = 5 ma NPN RF Transistor (continued) Output Admittance b ob g ob MPSH1 / MMBTH1 Y - FORWARD ADMITTANCE (mmhos) fb Forward Transfer Admittance 12 b fb 8 4 g fb -4 V CE = 1V -8 I C = 5 ma Y - REVERSE ADMITTANCE (mmhos) rb 8 6 Reverse Transfer Admittance V CE = 1V I C = 5 ma 4 -b rb 2 -g rb
5 Common Emitter Y Parameters vs. Frequency Y - INPUT ADMITTANCE (mmhos) ie V CE = 1V I C = 2 ma Input Admittance g ie b ie Y - OUTPUT ADMITTANCE (mmhos) oe V CE = 1V I C = 2 ma Output Admittance NPN RF Transistor (continued) b oe 1 g oe MPSH1 / MMBTH1 Y - FORWARD ADMITTANCE (mmhos) fe Forward Transfer Admittance 6 4 g fe b fe V CE = 1V I C = 2 ma Y - REVERSE ADMITTANCE (mmhos) re Reverse Transfer Admittance V CE = 1V I C = 2 ma -b re -g re
6 Test Circuits 2. KΩ 1 KΩ 1 pf 1 pf V CC = 12 V NPN RF Transistor (continued) MPSH1 / MMBTH1.8-1 pf 1 pf T1 2. pf L2 TUM.8-1 pf Input 5 Ω 1 pf L pf 1 pf 68 Ω L1 - L3 turns No. 16 wire, 1/2 inch L x 1/4 inch ID tapped 1 1/2 turns from cold side L2 - L6 turns No. 14 wire, 1 inch L x 1/4 inch ID tapped 1 1/2 turns from cold side T1 - Pri. 1 turn No. 16 wire Sec. 1 turn No. 18 wire 1 pf V BB FIGURE 1: Neutralized 2 MHz PG and NF Circuit 3 5 pf (NOTE 2) 175 pf 5 mhz Output into 5Ω RFC (NOTE 1) NOTE 1: 2 turns No. 16 AWG wire, 3/8 inch OD, 1 1/4 inch long NOTE 2: 9 turns No. 22 AWG wire, 3/16 inch OD, 1/2 inch long 1 pf 1 pf 2.2 KΩ RFC - V ee V CC FIGURE 2: 5 MHz Oscillator Circuit
7 TO-92 Tape and Reel Data TO-92 Packaging Configuration: Figure 1. FSCINT sample FAIRCHILD SEMICONDUCTOR CORPORATION HTB:B LOT: CBVK741B19 QTY: 1 TAPE and REEL OPTION See Fig 2. for various Reeling Styles NSID: PN2222N SPEC: D/C1: D9842 SPEC REV: B2 FSCINT QA REV: (FSCINT) F63TNR sample LOT: CBVK741B19 QTY: 2 FSID: PN222N SPEC: D/C1: D9842 QTY1: SPEC REV: D/C2: QTY2: CPN: N/F: F (F63TNR)3 5 Reels per Intermediate Box F63TNR Customized 375mm x 267mm x 375mm Intermediate Box Customized TO-92 TNR/AMMO PACKING INFROMATION Packing Style Quantity EOL code Reel A 2, D26Z AMMO PACK OPTION See Fig 3. for 2 Ammo Pack Options E 2, D27Z Ammo M 2, D74Z P 2, D75Z Unit weight =.22 gm Reel weight with components = 1.4 kg Ammo weight with components = 1.2 kg Max quantity per intermediate box = 1, units 327mm x 158mm x 135mm Immediate Box Customized 5 Ammo boxes per Intermediate Box F63TNR 333mm x 231mm x 183mm Intermediate Box FSCINT Customized (TO-92) BULK PACKING INFORMATION EOL CODE DESCRIPTION LEADCLIP DIMENSION QUANTITY J18Z TO-18 OPTION STD NO LEAD CLIP 2. K / BOX J5Z TO-5 OPTION STD NO LEAD CLIP 1.5 K / BOX NO EOL CODE L34Z TO-92 STANDARD STRAIGHT FOR: PKG 92, 94 (NON PROELECTRON SERIES), 96 TO-92 STANDARD STRAIGHT FOR: PKG 94 (PROELECTRON SERIES BCXXX, BFXXX, BSRXXX), 97, 98 NO LEADCLIP NO LEADCLIP 2. K / BOX 2. K / BOX BULK OPTION See Bulk Packing Information table FSCINT 2 units per EO7 box for std option Anti-static Bubble Sheets 114mm x 12mm x 51mm Immediate Box 5 EO7 boxes per intermediate Box 53mm x 13mm x 83mm Intermediate box Customized FSCINT 1, units maximum per intermediate box for std option 21 Fairchild Semiconductor Corporation March 21, Rev. B1
8 TO-92 Tape and Reel Data, continued TO-92 Reeling Style Configuration: Figure 2. Machine Option A (H) Machine Option E (J) Style A, D26Z, D7Z (s/h) Style E, D27Z, D71Z (s/h) TO-92 Radial Ammo Packaging Configuration: Figure 3. FIRST WIRE OFF IS COLLECTOR ADHESIVE TAPE IS ON THE TOP SIDE FLAT OF TRANSISTOR IS ON TOP FIRST WIRE OFF IS EMITTER ADHESIVE TAPE IS ON THE TOP SIDE FLAT OF TRANSISTOR IS ON BOTTOM ORDER STYLE D74Z (M) ORDER STYLE D75Z (P) FIRST WIRE OFF IS EMITTER (ON PKG. 92) ADHESIVE TAPE IS ON BOTTOM SIDE FLAT OF TRANSISTOR IS ON BOTTOM FIRST WIRE OFF IS COLLECTOR (ON PKG. 92) ADHESIVE TAPE IS ON BOTTOM SIDE FLAT OF TRANSISTOR IS ON TOP September 1999, Rev. B
9 TO-92 Tape and Reel Data, continued TO-92 Tape and Reel Taping Dimension Configuration: Figure 4. P Pd Hd b Ha H1 HO L1 d L S W1 WO W2 t W t1 P1 F1 P2 DO ITEM DESCRIPTION SYMBOL DIMENSION PO Base of Package to Lead Bend b.98 (max) User Direction of Feed Component Height Lead Clinch Height Ha HO.928 (+/-.25).63 (+/-.2) Component Base Height H1.748 (+/-.2) Component Alignment ( side/side ) Pd.4 (max) Component Alignment ( front/back ) Hd.31 (max) Component Pitch P.5 (+/-.2) Feed Hole Pitch PO.5 (+/-.8) Hole Center to First Lead P1.15 (+.9, -.1) Hole Center to Component Center P2.247 (+/-.7) Lead Spread F1/F2.14 (+/-.1) Lead Thickness d.18 (+.2, -.3) Cut Lead Length L.429 (max) Taped Lead Length L1.29 (+.51, -.52) Taped Lead Thickness t.32 (+/-.6) Carrier Tape Thickness t1.21 (+/-.6) TO-92 Reel Configuration: Figure 5. Carrier Tape Width Hold - down Tape Width Hold - down Tape position Feed Hole Position W WO W1 W2.78 (+.2, -.19).236 (+/-.12).35 (max).36 (+/-.25) Sprocket Hole Diameter DO.157 (+.8, -.7) Lead Spring Out S.4 (max) Note : All dimensions are in inches. ELECTROSTATIC SENSITIVE DEVICES D4 D1 ITEM DESCRIPTION SYSMBOL MINIMUM MAXIMUM F63TNR Customized D2 Reel Diameter D Arbor Hole Diameter (Standard) D (Small Hole) D Core Diameter D Hub Recess Inner Diameter D Hub Recess Depth W W2 W1 W3 Flange to Flange Inner Width W Hub to Hub Center Width W3 2.9 Note: All dimensions are inches D3 July 1999, Rev. A
10 TO-92 Package Dimensions TO-92 (FS PKG Code 92, 94, 96) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): Fairchild Semiconductor International January 2, Rev. B
11 SOT-23 Tape and Reel Data SOT-23 Packaging Configuration: Figure 1. Customized Human Readable Antistatic Cover Tape Embossed Carrier Tape Packaging Description: SOT-23 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with 3, units per 7" or 177cm diameter reel. The reels are dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 1, units per 13" or 33cm diameter reel. This and some other options are described in the Packaging Information table. These full reels are individually labeled and placed inside a standard intermediate made of recyclable corrugated brown paper with a Fairchild logo printing. One pizza box contains eight reels maximum. And these intermediate boxes are placed inside a labeled shipping box which comes in different sizes depending on the number of parts shipped. 3P 3P 3P 3P SOT-23 Packaging Information Packaging Option Standard (no flow code) D87Z Packaging type TNR TNR Qty per Reel/Tube/Bag 3, 1, Reel Size 7" Dia 13" Box Dimension (mm) 187x17x x343x64 Max qty per Box 24, 3, Weight per unit (gm) Weight per Reel (kg) mm x 342mm x 64mm Intermediate box for L87Z Option SOT-23 Unit Orientation Human Readable Note/Comments Human Readable sample SOT-23 Tape Leader and Trailer Configuration: Figure 2. Human readable 187mm x 17mm x 183mm Intermediate Box for Standard Option Carrier Tape Cover Tape Trailer Tape 3mm minimum or 75 empty pockets Components Leader Tape 5mm minimum or 125 empty pockets 2 Fairchild Semiconductor International September 1999, Rev. C
12 SOT-23 Tape and Reel Data, continued SOT-23 Embossed Carrier Tape Configuration: Figure 3. T P P2 D D1 E1 B Wc F E2 W Tc K P1 A User Direction of Feed Dimensions are in millimeter Pkg type A B W D D1 E1 E2 F P1 P K T Wc Tc SOT-23 (8mm) / / / / / / min 3.5 +/ / / / / / /-.2 Notes: A, B, and K dimensions are determined with respect to the EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and C). 2 deg maximum.5mm maximum B Typical component cavity center line.5mm maximum 2 deg maximum component rotation Sketch A (Side or Front Sectional View) Component Rotation SOT-23 Reel Configuration: Figure 4. A Sketch B (Top View) Component Rotation Typical component center line Sketch C (Top View) Component lateral movement W1 Measured at Hub Dim A Max Dim A max Dim N 7" Diameter Option See detail AA B Min Dim C See detail AA W3 Dim D min 13" Diameter Option W2 max Measured at Hub DETAIL AA Tape Size Reel Option Dimensions are in inches and millimeters Dim A Dim B Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL) 8mm 7" Dia / / / / mm 13" Dia / / / / September 1999, Rev. C
13 SOT-23 Package Dimensions SOT-23 (FS PKG Code 49) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram):.82 2 Fairchild Semiconductor International September 1998, Rev. A1
14 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Bottomless CoolFET CROSSVOLT DOME E 2 CMOS TM EnSigna TM FACT FACT Quiet Series FAST DISCLAIMER LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms FASTr GlobalOptoisolator GTO HiSeC ISOPLANAR MICROWIRE OPTOLOGIC OPTOPLANAR PACMAN POP PowerTrench QFET QS QT Optoelectronics Quiet Series SILENT SWITCHER SMART START SuperSOT -3 SuperSOT -6 SuperSOT -8 SyncFET TinyLogic UHC VCX FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Formative or In Design First Production Full Production This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G
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2SCR53P NPN.0A 50 Middle Power Transistor Datasheet Outline Parameter alue MPT3 CEO 50 I C.0A Base Collector Emitter Features ) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SAR53P 3)
2PD601ARL; 2PD601ASL
Rev. 01 6 November 2008 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Table 1.
TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP) Complementary Silicon Plastic Power Transistors
TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. Features
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Rev. 7 December 8 Product data sheet. Product profile. General description NPN general-purpose transistors in small plastic packages. Table. Product overview Type number [] Package PNP complement NXP JEITA
DATA SHEET. PBSS5540Z 40 V low V CEsat PNP transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2001 Jan 26. 2001 Sep 21.
DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D87 PBSS554Z 4 V low V CEsat PNP transistor Supersedes data of 21 Jan 26 21 Sep 21 FEATURES Low collector-emitter saturation voltage High current capability Improved
2N4921G, 2N4922G, 2N4923G. Medium-Power Plastic NPN Silicon Transistors 1.0 AMPERE GENERAL PURPOSE POWER TRANSISTORS 40 80 VOLTS, 30 WATTS
,, Medium-Power Plastic NPN Silicon Transistors These highperformance plastic devices are designed for driver circuits, switching, and amplifier applications. Features Low Saturation Voltage Excellent
Vdc. Vdc. Adc. W W/ C T J, T stg 65 to + 200 C
2N6284 (NPN); 2N6286, Preferred Device Darlington Complementary Silicon Power Transistors These packages are designed for general purpose amplifier and low frequency switching applications. Features High
DISCRETE SEMICONDUCTORS DATA SHEET
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1999 Apr 23 2001 Oct 10 FEATURES High current (max. 1 A) Low voltage (max. 80 V). APPLICATIONS Audio and video amplifiers. PINNING
BD239, BD239A, BD239B, BD239C NPN SILICON POWER TRANSISTORS
Copyright 1997, Power Innovations Limited, UK Designed for Complementary Use with the BD240 Series 30 W at 25 C Case Temperature TO-220 PACKAGE (TOP VIEW) 2 A Continuous Collector Current B 1 4 A Peak
AT-41486 Up to 6 GHz Low Noise Silicon Bipolar Transistor
AT- Up to 6 GHz Low Noise Silicon Bipolar Transistor Data Sheet Description Avago s AT- is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT- is housed in
DATA SHEET. BST50; BST51; BST52 NPN Darlington transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Feb 20.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 Supersedes data of 2001 Feb 20 2004 Dec 09 FEATURES High current (max. 0.5 A) Low voltage (max. 80 V) Integrated diode and resistor. APPLICATIONS
2STBN15D100. Low voltage NPN power Darlington transistor. Features. Application. Description
Low voltage NPN power Darlington transistor Features Good h FE linearity High f T frequency Monolithic Darlington configuration with integrated antiparallel collector-emitter diode TAB Application Linear
DATA SHEET. BC875; BC879 NPN Darlington transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 May 28.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1999 May 28 2004 Nov 05 FEATURES High DC current gain (min. 1000) High current (max. 1 A) Low voltage (max. 80 V) Integrated
MJD112 (NPN), MJD117 (PNP) Complementary Darlington Power Transistors. DPAK For Surface Mount Applications
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PHOTOTRANSISTOR OPTOCOUPLERS
MCT2 MCT2E MCT20 MCT27 WHITE PACKAGE (-M SUFFIX) BLACK PACKAGE (NO -M SUFFIX) DESCRIPTION The MCT2XXX series optoisolators consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor
NPN Darlington Power Silicon Transistor Qualified per MIL-PRF-19500/472
and Available on commercial versions NPN Darlington Power Silicon Transistor Qualified per MIL-PRF-19500/472 DESCRIPTION Qualified Levels: JAN, JANTX, and JANTX This high speed NPN transistor is military
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BC546 / BC547 / BC548 / BC549 / BC550 NPN Epitaxial Silicon Transistor Features Switching and Amplifier High-oltage: BC546, CEO = 65 Low-Noise: BC549, BC550 Complement to BC556, BC557, BC558, BC559, and
TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) Darlington Complementary Silicon Power Transistors
TIP140, TIP141, TIP142, (); TIP145, TIP146, TIP147, () Darlington Complementary Silicon Power Transistors Designed for generalpurpose amplifier and low frequency switching applications. Features High DC
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TIP41A / TIP41B / TIP41C NPN Epitaxial Silicon Transistor Features Medium Power Linear Switching Applications Complement to TIP42 Series Ordering Information 1 TO-220 1.Base 2.Collector 3.Emitter November
Description. TO-220F FDPF Series. Symbol Parameter FDP26N40 FDPF26N40 Units V DSS Drain to Source Voltage 400 V V GSS Gate to Source Voltage ±30 V
FDP26N40 / FDPF26N40 N-Channel MOSFET 400V, 26A, 0.6Ω Features R DS(on) = 0.3Ω ( Typ.)@ V GS = 0V, I D = 3A Low gate charge ( Typ. 48nC) Low C rss ( Typ. 30pF) Fast switching 00% avalanche tested Improved
DATA SHEET. BFG540W BFG540W/X; BFG540W/XR NPN 9 GHz wideband transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Dec 04
DISCRETE SEMICONDUCTORS DATA SHEET BFGW BFGW/X; BFGW/XR Supersedes data of 997 Dec May 3 BFGW BFGW/X; BFGW/XR FEATURES MARKING High power gain Low noise figure High transition frequency Gold metallization
Silicon NPN Phototransistor
Silicon NPN Phototransistor DESCRIPTION 7 is a silicon NPN phototransistor with high radiant sensitivity in black, T-1¾ plastic package with base terminal and daylight blocking filter. Filter bandwidth
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SOT89 Rev. 05 21 March 2013 Product data sheet 1. Product profile 1.1 General description in a SOT89 plastic package. 1.2 Features and benefits High gain Gold metallization ensures excellent reliability
FSAL200 Wide Bandwidth Quad 2:1 Analog Multiplexer / De-multiplexer Switch
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BD238. Low voltage PNP power transistor. Features. Applications. Description. Low saturation voltage PNP transistor
Low voltage PNP power transistor Features Low saturation voltage PNP transistor Applications Audio, power linear and switching applications Description The device is manufactured in planar technology with
NPN wideband silicon RF transistor
Rev. 1 13 January 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT23 package. The is part of the
PNP SMALL SIGNAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/291
DEVICES PNP SMALL SIGNAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/291 LEVELS 2N2906A 2N2907A JAN 2N2906AL 2N2907AL JANTX 2N2906AUA 2N2907AUA JANTXV 2N2906AUB 2N2907AUB JANS 2N2906AUBC * 2N2907AUBC
BD135 - BD136 BD139 - BD140
BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features Products are pre-selected in DC current gain Application General purpose Description These epitaxial planar transistors are mounted
45 V, 100 ma NPN general-purpose transistors
Rev. 9 2 September 214 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number
BUX48/48A BUV48A/V48AFI
BUX48/48A BU48A/48AFI HIGH POWER NPN SILICON TRANSISTORS STMicroelectronics PREFERRED SALESTYPES NPN TRANSISTOR HIGH OLTAGE CAPABILITY HIGH CURRENT CAPABILITY FAST SWITCHING SPEED APPLICATIONS SWITCH MODE
1N5401-1N5408 General-Purpose Rectifiers
N540 - N5408 General-Purpose Rectifiers Features 3.0 A Operation at T A = 75 C with No Thermal Runaway High Current Capability Low Leakage DO-20AD COLOR BAND DENOTES CATHODE August 205 N540 - N5408 General-Purpose
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1020
2SA12 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA12 Power Amplifier Applications Power Switching Applications Unit: mm Low Collector saturation voltage: V CE (sat) =.5 V (max) (I C
FMBS2383 NPN Epitaxial Silicon Transistor
FMBS2383 NPN Epitaxial Silicon Transistor Features Power Amplifier ollector-emitter Voltage : V EO =60V urrent Gain Bandwidth Product : f T =20MHz SuperSOT TM -6 E B 2 3 6 5 4 April 20 Marking : 2383 Absolute
ST13005. High voltage fast-switching NPN power transistor. Features. Applications. Description
High voltage fast-switching NPN power transistor Datasheet production data Features Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Applications
NPN wideband silicon germanium RF transistor
Rev. 1 29 April 211 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F
BC107/ BC108/ BC109 Low Power Bipolar Transistors
TO-18 Features: NPN Silicon Planar Epitaxial Transistors. Suitable for applications requiring low noise and good h FE linearity, eg. audio pre-amplifiers, and instrumentation. TO-18 Metal Can Package Dimension
TIP31, TIP32 High Power Bipolar Transistor
Features: Collector-Emitter sustaining voltage - V CEO(sus) = 60V (Minimum) - TIP31A, TIP32A = 100V (Minimum) - TIP31C,. Collector-Emitter saturation voltage - V CE(sat) = 1.2V (Maximum) at I C = 3.0A.
DISCRETE SEMICONDUCTORS DATA SHEET. BFQ34 NPN 4 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14
DISCRETE SEMICONDUCTORS DATA SHEET File under Discrete Semiconductors, SC4 September 995 DESCRIPTION PINNING NPN transistor encapsulated in a 4 lead SOTA envelope with a ceramic cap. All leads are isolated
P D 215 1.25 Operating Junction Temperature T J 200 C Storage Temperature Range T stg 65 to +150 C
SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line The is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold
Type Marking Pin Configuration Package BCX41 EKs 1 = B 2 = E 3 = C SOT23. Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage V CEO
BX4 NPN Silicon AF and Switching Transistor For general AF applications High breakdown voltage Low collectoremitter saturation voltage omplementary type: BX4 (PNP) Pbfree (RoHS compliant) package Qualified
BSP52T1 MEDIUM POWER NPN SILICON SURFACE MOUNT DARLINGTON TRANSISTOR
Preferred Device This NPN small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is housed in the SOT-223 package,
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2383
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) SC8 Color TV Vertical Deflection Output Applications Color TV Class-B Sound Output Applications Unit: mm High breakdown voltage: V CEO = 6 V
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Features: Characteristic Symbol Rating Unit. Collector-Emitter Voltage V CEO 100 Collector-Base Voltage I C
Designed for use in general purpose power amplifier and switching applications. Features: Collector-Emitter Sustaining Voltage V CEO(sus) = 100V (Minimum) - TIP35C, TIP36C DC Current Gain h FE = 25 (Minimum)
FCX605 120V NPN SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR SUMMARY SOT 89. V CEO=120V; V CE(sat)= 1V; I C= 1A
120V NPN SILION HIGH VOLTAGE DARLINGTON TRANSISTOR SUMMARY V EO=120V; V E(sat)= 1V; I = 1A DESRIPTION This new NPN Darlington transistor provides users with very efficeint performance combining low V E
4N25 Phototransistor Optocoupler General Purpose Type
4N Phototransistor Optocoupler General Purpose Type Data Sheet Lead (Pb) Free RoHS 6 fully compliant RoHS 6 fully compliant options available; -xxxe denotes a lead-free product Description The 4N is an
MBR20200CT Dual High Voltage Schottky Rectifier
MBR20200CT Dual High Voltage Schottky Rectifier Features Low Forward Voltage Drop Low Power Loss and High Efficiency High Surge Capability RoHS Compliant Matte Tin (Sn) Lead Finish Terminal Leads Surface
74LVX132 Low Voltage Quad 2-Input NAND Schmitt Trigger
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Optocoupler, Phototransistor Output, with Base Connection
HA/HA2/HA3/HA4/HA5 FEATURES Interfaces with common logic families Input-output coupling capacitance < pf Industry standard dual-in line 6-pin package A C NC 2 3 6 5 4 B C E Isolation test voltage: 5300
EN: This Datasheet is presented by the m anufacturer. Please v isit our website for pricing and availability at www.hest ore.hu.
EN: This Datasheet is presented by the m anufacturer. Please v isit our website for pricing and availability at www.hest ore.hu. 2N3055, MJ2955 Complementary power transistors Features Datasheet - production
Optocoupler, Phototransistor Output, with Base Connection
4N25, 4N26, 4N27, 4N28 Optocoupler, Phototransistor Output, FEATURES A 6 B Isolation test voltage 5000 V RMS Interfaces with common logic families C 2 5 C Input-output coupling capacitance < pf NC 3 4
BC517 NPN Darlington Transistor
B517 NPN Darlington Transistor Features This device is designed for applications requiring extremely high current gain at currents to 1. A. Sourced from process 5. 1 2 3 1 2 3 September 215 TO-92 1. ollector
Y.LIN ELECTRONICS CO.,LTD.
Features Current transfer ratio (CTR 50~600% at I F =5mA, V CE =5V) High isolation voltage between input and output (Viso=5000 V rms ) Creepage distance >7.62 mm Operating temperature up to +110 C Compact
