Prospect for the memory Packaging technology

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Transcription:

Prospect for the memory Packaging technology Nam-Seog Kim, Ph.D. Vice President, P&T Technology Group SK hynix Inc.

Agenda 1. Electronic Packaging Trend 2. Memory Packaging Roadmap 3. Innovative Packaging Technology - Package - Process - Material 4. Conclusion

Electronic Packaging Development Trend Packaging technology is developing to compensate the technology gap between Si and PCB tech. [Source] Yole Development Bridging the gap between Si and PCB process capabilities High I/O & speed : PGA FBGA Flip Chip WLP/TSV Improvement by the high functionality of IT application High Density & Functionality, High thermal dissipation. 3 / 14

Memory Packaging Roadmap Flip chip and TSV/WLCSP are promising technologies to satisfy faster speed, wider bandwidth and smaller/thinner package Past Present Near Future Device Market PC/Notebook Smart Phone/Tablet PC /Smart Device IoT (Wearable Device, Smart Car, Smart Home and so on) Cloud(Big Data) DRAM TSOP BOC RDL DDP/QDP Flip Chip TSV 2.5D SiP*** 3D SiP Optical Interconnection High Performance & Density Memory Package NAND Flash PoP emcp FOWLP** Flexible Package Thin Profile emmc (with Controller) UFS SSD BGA SSD NAND TSV High Performance & Density EMI* Shield *EMI: Electro Magnetic Interference **FOWLP: Fan-out Wafer Level Package ***SiP: System in Package 4 / 14

Innovative Packaging Technology - Package 1 Package Stack AP & Memory package stack is widely being used. PoP (Package on Package) Mobile Application: AP + Memory Top/Bottom PKG Warpage Control 5 / 14

Innovative Packaging Technology - Package 2 Chip Stack (Planar) Planar chip stack is driven by low cost and high density requirement 2.5D SiP is a suitable solution to place memory dies near SoC Planar Stack Package BOC/Flip chip planar DDP(Dual Die Package) 2.5D SiP SoC + 2/4/8 HBMs(High Bandwidth Memory) on interposer Various structures : CoCoS, CoWoS (TSMC), EMIB (Intel) HBM Interposer Pinwheel package - Thin Profile - Improve Signal Integrity Substrate HBM Source : AMD 6 / 14

Innovative Packaging Technology - Package 2 Chip Stack (Vertical) Conventional chip stack using wiring and TSV chip stack are implemented Wire Interconnection TSV Interconnection MCP (Multi Chip Package) 3DS UFS (Universal Flash Storage) HBM (High Bandwidth Memory) CoC (Chip on Chip) 7 / 14

Innovative Packaging Technology - Package 3 Fan out package FOWLP is a promising solution, but cost reduction is needed. Market Driver for Fan-out Fan-out Packaging for SiP PoP Bottom Package with Logic (Mobile AP) Form Factor - TSMC InFO 1 - Amkor SLIM 2 & SWIFT 3 - SPIL SLIT 4 Cost Performance *Source: http://gigglehd.com/zbxe/14078384 1 InFO (Integrated Fan Out Wafer Level PKG), 2 SLIM (siliconless integrated module), 3 SWIFT (Silicon Wafer Integrated Fan-out Tech.), 4 SLIT (Silicon-less Interconnect Tech.) 8 / 14

Innovative Packaging Technology - Package 3 Fan out package FOWLP is a promising solution, but cost reduction is needed. Cost Reduction Challenges for FOWLP High Packaging Cost Cost Reduction by Panel Level Packaging Unit Cost Hurdle of FOPLP Yield Warpage Control Die Bonding Accuracy Panel Handling Infra Investment YIELD Infra fbga FOWLP FOPLP 9 / 14

Conclusion SK hynix is leading new and advanced memory package development against diverse and rapidly changing circumstances of semiconductor industry 4GB DDR2 Wafer Level Package Memory Module (2008.12) 40 nm 2Gb DDR3 8stack using TSV (E/S, 2011.3) 24Stack 1.4T NAND (M/S, 2007.9) 2Stack Wafer level Package using TSV (E/S, 2010.3) 2011 2010 WIO1 4KGSD (E/S, 2012.11) 2012 2008 8Stack NAND (C/S, 2008.12) 2013 2007 29 nm HBM1 5mKGSD using TSV (C/S, 2014.9) 2GB DDR2 Wafer Level Package Memory Module (2007.1) World Wide 1st 16mKGSD using TSV (M/S, 2013.09 ) 2014 2015 2016 Flexible Package Wafer to Wafer Bonding Optical Interconnection Panel Level Package Conventional PKG Wafer Level PKG (WLP, TSV) WLCSP 0.37T - World Wide 1 st (E/S, 2013.9) 64GB DDR4 Module using TSV (2013.9) 128GB DDR4 Module using TSV (2014.3) WIO2 Mobile DRAM (4x Faster) using TSV (2014.9) 128GB LRDIMM Module using TSV (Validated 2015.11) 16Stack NAND 0.9T using 15um Chip -World Wide 1st (E/S, 2014.9) 3DS for 64GB/128GB RDIMM 10 / 14

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