3.11.5.5 DDR2 Specific SDRAM Functions



Similar documents
DDR2 Device Operations & Timing Diagram DDR2 SDRAM. Device Operations & Timing Diagram

JEDEC STANDARD DDR2 SDRAM SPECIFICATION JESD79-2B. (Revision of JESD79-2A) JEDEC SOLID STATE TECHNOLOGY ASSOCIATION. January 2005

Technical Note DDR2 Offers New Features and Functionality

PT973216BG. 32M x 4BANKS x 16BITS DDRII. Table of Content-

DDR3(L) 4GB / 8GB UDIMM

Technical Note. Initialization Sequence for DDR SDRAM. Introduction. Initializing DDR SDRAM

GR2DR4B-EXXX/YYY/LP 1GB & 2GB DDR2 REGISTERED DIMMs (LOW PROFILE)

V58C2512(804/404/164)SB HIGH PERFORMANCE 512 Mbit DDR SDRAM 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 8Mbit X 16 (164)

ADQYF1A08. DDR2-1066G(CL6) 240-Pin O.C. U-DIMM 1GB (128M x 64-bits)

User s Manual HOW TO USE DDR SDRAM

DDR3 SDRAM UDIMM MT8JTF12864A 1GB MT8JTF25664A 2GB

DDR2 SDRAM Unbuffered DIMM MT9HTF3272A 256MB MT9HTF6472A 512MB MT9HTF12872A 1GB

are un-buffered 200-Pin Double Data Rate (DDR) Synchronous DRAM Small Outline Dual In-Line Memory Module (SO-DIMM). All devices

Features. DDR3 Unbuffered DIMM Spec Sheet

IS42/45R86400D/16320D/32160D IS42/45S86400D/16320D/32160D

DDR2 SDRAM SODIMM MT8HTF3264HD 256MB MT8HTF6464HD 512MB MT8HTF12864HD 1GB For component data sheets, refer to Micron s Web site:

DDR3 DIMM Slot Interposer

DDR2 SDRAM SODIMM MT8HTF6464HDZ 512MB MT8HTF12864HDZ 1GB. Features. 512MB, 1GB (x64, DR) 200-Pin DDR2 SODIMM. Features

Tuning DDR4 for Power and Performance. Mike Micheletti Product Manager Teledyne LeCroy

Computer Architecture

Tuning DDR4 for Power and Performance. Mike Micheletti Product Manager Teledyne LeCroy

Table 1: Address Table

DDR2 SDRAM SODIMM MT8HTF12864HZ 1GB MT8HTF25664HZ 2GB. Features. 1GB, 2GB (x64, SR) 200-Pin DDR2 SDRAM SODIMM. Features

Feature. CAS Latency Frequency. trcd ns. trp ns. trc ns. tras 45 70K 45 70K 45 70K ns

JEDEC STANDARD. Double Data Rate (DDR) SDRAM Specification JESD79C. (Revision of JESD79B) JEDEC SOLID STATE TECHNOLOGY ASSOCIATION MARCH 2003

ADATA Technology Corp. DDR3-1600(CL11) 240-Pin VLP ECC U-DIMM 4GB (512M x 72-bit)

DDR2 SDRAM SODIMM MT16HTF12864H 1GB MT16HTF25664H 2GB

DDR2 SDRAM UDIMM MT18HTF6472AY 512MB MT18HTF12872AY 1GB MT18HTF25672AY 2GB MT18HTF51272AY 4GB. Features

Technical Note DDR3 ZQ Calibration

Memory Module Specifications KVR667D2D4F5/4G. 4GB 512M x 72-Bit PC CL5 ECC 240-Pin FBDIMM DESCRIPTION SPECIFICATIONS

DDR2 SDRAM SODIMM MT16HTF12864HZ 1GB MT16HTF25664HZ 2GB MT16HTF51264HZ 4GB. Features. 1GB, 2GB, 4GB (x64, DR) 200-Pin DDR2 SDRAM SODIMM.

DDR2 SDRAM SODIMM MT4HTF6464HZ 512MB. Features. 512MB (x64, SR) 200-Pin DDR2 SODIMM. Features. Figure 1: 200-Pin SODIMM (MO-224 R/C C)

Mobile SDRAM. MT48H16M16LF 4 Meg x 16 x 4 banks MT48H8M32LF 2 Meg x 32 x 4 banks

Note: Data Rate (MT/s) CL = 3 CL = 4 CL = 5 CL = 6. t RCD (ns) t RP (ns) t RC (ns) t RFC (ns)

DDR subsystem: Enhancing System Reliability and Yield

DDR2 SDRAM UDIMM MT16HTF6464AY 512MB MT16HTF12864AY 1GB MT16HTF25664AY 2GB MT16HTF51264AY 4GB. Features

Features. DDR SODIMM Product Datasheet. Rev. 1.0 Oct. 2011

1.55V DDR2 SDRAM FBDIMM

Table 1 SDR to DDR Quick Reference

DDR SDRAM SODIMM. MT9VDDT1672H 128MB 1 MT9VDDT3272H 256MB MT9VDDT6472H 512MB For component data sheets, refer to Micron s Web site:

DDR2 Unbuffered SDRAM MODULE

ThinkServer PC DDR2 FBDIMM and PC DDR2 SDRAM Memory options boost overall performance of ThinkServer solutions

Address Summary Table: 128MB 256MB 512MB 1GB 2GB Module

DDR SDRAM UDIMM MT16VDDT6464A 512MB MT16VDDT12864A 1GB MT16VDDT25664A 2GB

Features. DDR3 SODIMM Product Specification. Rev. 1.7 Feb. 2016

DDR3 SDRAM SODIMM MT16JSF25664HZ 2GB MT16JSF51264HZ 4GB. Features. 2GB, 4GB (x64, DR) 204-Pin Halogen-Free DDR3 SODIMM. Features

DDR SDRAM SODIMM. MT8VDDT3264H 256MB 1 MT8VDDT6464H 512MB For component data sheets, refer to Micron s Web site:

DDR SDRAM SODIMM MT16VDDF6464H 512MB MT16VDDF12864H 1GB

Standard: 64M x 8 (9 components)

DDR3 SDRAM SODIMM MT8JSF12864HZ 1GB MT8JSF25664HZ 2GB. Features. 1GB, 2GB (x64, SR) 204-Pin Halogen-Free DDR3 SDRAM SO- DIMM.

A N. O N Output/Input-output connection

HYB18T512400BF HYB18T512800BF HYB18T512160BF

DDR3 SDRAM UDIMM MT16JTF25664AZ 2GB MT16JTF51264AZ 4GB MT16JTF1G64AZ 8GB. Features. 2GB, 4GB, 8GB (x64, DR) 240-Pin DDR3 UDIMM.

DDR3 SDRAM SODIMM MT8JSF25664HDZ 2GB. Features. 2GB (x64, DR) 204-Pin DDR3 SODIMM. Features. Figure 1: 204-Pin SODIMM (MO-268 R/C A)

Highlights of the High- Bandwidth Memory (HBM) Standard

DDR SDRAM Small-Outline DIMM MT16VDDF6464H 512MB MT16VDDF12864H 1GB

Memory Module Specifications KVR667D2D8F5/2GI. 2GB 256M x 72-Bit PC CL5 ECC 240-Pin FBDIMM DESCRIPTION SPECIFICATIONS

Memory unit. 2 k words. n bits per word

JEDEC STANDARD DDR3 SDRAM. JESD79-3C (Revision of Jesd79-3B, April 2008) JEDEC SOLID STATE TECHNOLOGY ASSOCIATION NOVEMBER 2008

1Gb DDR2 SDRAM. H5PS1G83EFR-xxC H5PS1G83EFR-xxI H5PS1G83EFR-xxL H5PS1G83EFR-xxJ. [TBD] H5PS1G83EFR-xxP H5PS1G83EFR-xxQ H5PS1G83EFR-G7x

DM Segment Decoder/Driver/Latch with Constant Current Source Outputs

1M x 32 Bit x 4 Banks Synchronous DRAM

Jerry Chu 2010/07/07 Vincent Chang 2010/07/07

DDR2 SDRAM SODIMM MT4HTF1664H 128MB MT4HTF3264H 256MB MT4HTF6464H 512MB

OPTIMIZE DMA CONFIGURATION IN ENCRYPTION USE CASE. Guillène Ribière, CEO, System Architect

ADOVE1B163B2G. 1. General Description. 2. Features. 3. Pin Assignment. 4. Pin Description. 5. Block Diagram. 6. Absolute Maximum Ratings

Memory Hierarchy. Arquitectura de Computadoras. Centro de Investigación n y de Estudios Avanzados del IPN. adiaz@cinvestav.mx. MemoryHierarchy- 1

4M x 16Bits x 4Banks Mobile Synchronous DRAM

Parity 3. Data Rate (MT/s) CL = 6 CL = 5 CL = 4 CL = 3-80E PC

Fairchild Solutions for 133MHz Buffered Memory Modules

White Paper Utilizing Leveling Techniques in DDR3 SDRAM Memory Interfaces

REV /2007 NANYA TECHNOLOGY CORP. NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.

Application Note for General PCB Design Guidelines for Mobile DRAM

DDR SDRAM RDIMM MT36VDDF GB MT36VDDF GB

Technical Note FBDIMM Channel Utilization (Bandwidth and Power)

AN10935 Using SDR/DDR SDRAM memories with LPC32xx

EM44BM1684LBB. Revision History. Revision 0.1 (Jun. 2010) -First release. Revision 0.2 (Apr. 2014) -Add speed 1066MHz. Apr /28

Contents. 1. Trends 2. Markets 3. Requirements 4. Solutions

DDR4 Memory Technology on HP Z Workstations

NT5CB512T4AN-BE 78ball BGA DDP 533 DDR

DDR2 SDRAM FBDIMM MT36HTF25672F 2GB MT36HTF51272F 4GB. Features. 2GB, 4GB (x72, DR) 240-Pin DDR2 SDRAM FBDIMM. Features

DDR2SOFT DDR2 Memory Controller VHDL SOURCE CODE OVERVIEW

DS1220Y 16k Nonvolatile SRAM

DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 WE# RAS# A0 A1 A2 A3

CAT28C64B F R E E. 64K-Bit CMOS PARALLEL EEPROM L E A D FEATURES DESCRIPTION BLOCK DIAGRAM

INTEGRATED CIRCUITS. For a complete data sheet, please also download:

DDR SDRAM UNBUFFERED DIMM

DDR2 SDRAM FBDIMM MT9HTF6472F 512MB MT9HTF12872F 1GB. Features. 512MB, 1GB (x72, SR) 240-Pin DDR2 SDRAM FBDIMM. Features

DS1220Y 16k Nonvolatile SRAM

15. Introduction to ALTMEMPHY IP

DDR2 SDRAM FBDIMM MT18HTF12872FD 1GB MT18HTF25672FD 2GB. Features. 1GB, 2GB (x72, DR) 240-Pin DDR2 SDRAM FBDIMM. Features

Transcription:

JEDEC Standard No. 2-C Page..5.5..5.5 DDR2 Specific SDRAM Functions DDR2 SDRAM EMRS2 and EMRS For DDR2 SDRAMs, both bits BA and BA must be decoded for Mode/Extended Mode Register Set commands. Users must initialize all four Mode Registers. The registers may be initialized in any order. Notes:. Background: This is to ensure future compatibility if/when any new feature is assigned to a bit or bits in EMR(2) or EMR(). 2. EMR(2) and EMR(): At this time, there are no features defined which use bit(s) in EMR(2) or EMR(). EMR(2) Programming: * BA2 BA BA A5 ~ A A2 A A A9 A8 A7 A6 A5 A4 A A2 A A * * Extended Mode Register(2) *: EMRS(2) is reserved for future use and all bits except BA and BA must be programmed to when setting the mode register during initialization. EMR() Programming: * BA2 BA BA A5 ~ A A2 A A A9 A8 A7 A6 A5 A4 A A2 A A * * Extended Mode Register() *: EMRS() is reserved for future use and all bits except BA and BA must be programmed to when setting the mode register during initialization. Release

JEDEC Standard No. 2-C Page..5.5 2 DDR2(x2) SDRAM MR Definition BA2 BA BA A5-A A2 A A A9 A8 A7 A6 A5 A4 A A2 A A * * PD WR DLL TM CAS latency BT Burst length Mode Register A8 DLL Reset No Yes BA BA MRS mode MR EMR() EMR(2) EMR() A2 Active power down exit time Fast exit (use txard) Slow exit (use txards) A7 mode Normal Test Write recovery for autoprecharge A A A9 WR 2 4 5 6 7 (Optional) 8 (Optional) * 2 A DDR2-4 DDR2-5 DDR2-667 DDR2-8 DDR2-66 Burst Type Sequential Interleave Burst Length A2 A A6 A5 A4 CAS Latency 2 (Optional) (speed bin determined)* 4 5 (speed bin determined)* 6 (speed bin determined)* 7 (speed bin determined)* A BL 4 8 Notes:. BA2 and A-A5 are reserved for future use and must be set to when programming the MR. 2. For DDR2-4/5, WR (write recovery for autoprecharge) min is determined by tck max and WR max is determined by tck min. WR in clock cycles is calculated by dividing twr (in ns) by tck (in ns) and rounding up to the next integer (WR[cycles] = RU{ twr[ns] / tck[ns] }, where RU stands for round up). For DDR2-667/8/66, WR min is determined by tck(avg) max and WR max is determined by tck(avg) min. WR[cycles] = RU{ twr[ns] / tck(avg)[ns] }, where RU stands for round up. The mode register must be programmed to this value. This is also used with trp to determine tdal.. Speed bin determined. Not required on all speed bins. * A2 must be driven by the system to properly program the mode registers. Release 8

JEDEC Standard No. 2-C Page..5.5 DDR2(x2) SDRAM EMR() Definition BA2 BA BA A5-A A2 A A A9 A8 A7 A6 A5 A4 A A2 A A * * Qoff * DQS OCD program Rtt* 5 Additive latency Rtt* 5 D.I.C* 6 DLL Extended Mode Register () A DLL BA BA MRS mode MR EMR () EMR (2) EMR () A9 A8 A7 OCD Calibration Program OCD calibration mode exit: main setting Drive () Drive () Adjust mode* 2 OCD Calibration default* A5 A4 A Additive Latency 2 4 5 (Optional) 6 (Optional) A2 Qoff (Optional)* 4 Output buffers enabled Output buffers disabled A DQS A (DQS enable) () () Strobe Function Matrix DQS DQS DQS DQS DQS High-Z Notes:. BA2 and A-A5, A are reserved for future use, and must be set to when programming the EMR (). 2. When adjust mode is issued, AL from previously set value must be applied.. After setting to default, OCD mode needs to be exited by setting A9 to A7 to. Refer to the chapter Off-Chip Driver (OCD) Impedance Adjustment for detailed information. 4. Output disabled - DQs, DQSs, DQSs. This feature is used in conjunction with DIMM IDD measurements when IDDQ is not desired to be included. 5. Rtt values are programmed using EMR () [A6, A2] and EMR (2) [A]. 6. Driver impedance values are programmed using EMR () [A] and EMR (2) [A2]. * A2 must be driven by the system to properly program the mode registers. Release 8

JEDEC Standard No. 2-C Page..5.5 4 DDR2(x2) SDRAM EMR(2) Definition BA2 BA BA A5-A A2 A A A9 A8 A7 A6 A5 A4 A A2 A A * * D.I.C* 6 Rtt* 5 * SRF * DCC* 4 PASR* Extended Mode Register (2) BA BA MRS mode MR A DCC (Optional)* 4 EMR() EMR(2) EMR() A2 A A Partial Array Self Refresh for 4 Banks (Optional) Full array Half Array (BA[:]=&) A7 High Temperature Self Refresh Rate (Optional)* 2 Quarter Array (BA[:]=) Not defined /4 array (BA[:]=, &) Half array (BA[:]=&) Quarter array (BA[:]=) Not defined A2 A A Partial Array Self Refresh for 8 Banks (Optional) Full array Half Array (BA[2:]=,,&) Quarter Array (BA[2:]=&) /8th array (BA[2:] = ) /4 array (BA[2:]=,,,,&) Half array (BA[2:]=,,&) Quarter array (BA[2:]=&) /8th array (BA[2:]=) Notes:. BA2 and A4-A6, A8-A, A-A5 are reserved for future use and must be set to when programming the EMR(2). 2. As industry adoption of high temperature parts proceeds, users need to determine if a DRAM supports High Temperature Self-Refresh Rate mode before attempting to use it in that mode. JEDEC standard DDR2 SDRAM Module user can look at DDR2 SDRAM Module SPD field Byte 49 bit []. If the high temperature self-refresh mode is supported then controller can set the EMR(2)[A7] bit to enable the self-refresh rate in case of higher than 85 C temperature self-refresh operation. For the loose part user, please refer to DRAM Manufacturer s part number and data sheet to check the high temperature self-refresh rate availability.. Optional in DDR2 SDRAM. If PASR (Partial Array Self Refresh) is enabled, data located in areas of the array beyond the specified address range will be lost if self refresh is entered. Data integrity will be maintained if tref conditions are met and no Self Refresh command is issued.if the PASR feature is not supported, EMR(2)[A-A2] must be set to when programming EMR(2). 4. Optional in DDR2 SDRAM. JEDEC standard DDR2 SDRAM may or may not have DCC (Duty Cycle Corrector) implemented, and in some of the DRAMs implementing DCC, user may be given the controllability of DCC thru EMR(2) [A] bit. JEDEC standard DDR2 SDRAM users can look at manufacturer's data sheet to check if the DRAM part supports DCC controllability. If Optional DCC Controllability is supported, user may enable or disable the DCC by programming EMR(2)[A] accordingly. If the controllability feature is not supported, EMR(2)[A] must be set to when programming EMR(2). 5. Rtt values are programmed using EMR() [A6, A2] and EMR(2) [A]. 6. Driver impedance values are programmed using EMR () [A] and EMR (2) [A2]. * A2 must be driven by the system to properly program the mode registers. Release 8

JEDEC Standard No. 2-C Page..5.5 5 Rtt Programming and Driver Impedance Programming Use A, A2 in EMR(2) for RTT, Ron extension EMR () EMR (2) A6 A2 A Rtt (NOMINAL) ODT d 75Ω 5Ω 5Ω (Optional) 225Ω (Optional) EMR () EMR (2) A A2 Ron (NOMINAL) Full Reduced /4 (Optional) DDR2(x2) SDRAM EMR() Definition Note:. All bits in EMR() except BA and BA are reserved for future use and must be set to when programming the EMR(). BA2 BA BA A5-A A2 A A A9 A8 A7 A6 A5 A4 A A2 A A * * Extended Mode Register() Release 8