FMBS2383 NPN Epitaxial Silicon Transistor



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FMBS2383 NPN Epitaxial Silicon Transistor Features Power Amplifier ollector-emitter Voltage : V EO =60V urrent Gain Bandwidth Product : f T =20MHz SuperSOT TM -6 E B 2 3 6 5 4 April 20 Marking : 2383 Absolute Maximum Ratings T a = 25 unless otherwise noted Symbol Parameter Value Units V BO ollector-base Voltage 60 V V EO ollector-emitter Voltage 60 V V EBO Emitter-Base Voltage 5 V ollector urrent 800 ma I B Base urrent 60 ma P D Power Dissipation 630 mw R θja * Thermal Resistance, Junction to Ambient 200 /W T J Junction Temperature 50 T STG Storage Temperature -55 to +50 * note) : Minimum land pattern size Electrical haracteristics T a = 25 unless otherwise noted Symbol Parameter Test ondition Min. Typ. Max. Units BV BO ollector-base Breakdown Voltage = 0μA, I B = 0 60 V BV EO ollector-emitter Breakdown Voltage = 0mA, I B = 0 60 V BV EBO Emitter-Base Breakdown Voltage I E = ma, = 0 5 V BO ollector ut-off urrent V B = 20V, I E = 0 00 na I EBO Emitter ut-off urrent V BE = 5V, = 0 00 na h FE D urrent Gain V E = 5V, = 00mA 80 60 V E (sat) ollector-emitter Saturation Voltage = 500mA, I B = 50mA.0 V V BE (on) Base-Emitter On Voltage V E = 5V, = 500mA.0 V f T urrent Gain Bandwidth Product V E = 5V, = 00mA 20 MHz ob Output apacitance V B = 0V, I E = 0, f = MHz 30 pf 20 Fairchild Semiconductor orporation www.fairchildsemi.com FMBS2383 Rev. A0

Typical Performance haracteristics h FE, D URRENT GAIN V BE (sat)[v], SATURATION VOLTAGE 000 00 0 0 00 000 0 T a = 00 o Figure. D urrent Gain = 00 o V E = 5V 0. 0 00 000 = 0 I B V E (sat),[v] SATURATION VOLTAGE 0. = 00 o 0.0 0 00 000 = 0 I B Figure 2. ollector-emitter Saturation Voltage 500 400 300 200 00 = 00 o 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9.0 V BE (on) [V], BASE-EMITTER ON VOLTAGE V E = 5V Figure 3. Base-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 00 00 BO [na], ollector ut-off urrent 0 0. = 00 o I EBO [na], Emitter ut-off urrent 0 0. 0.0 = 00 o 0.0 0 00 V B [V], ollector-base Voltage E-3 2 3 4 5 6 7 8 9 0 V EB [V], Emitter-Base Voltage Figure 5. ollector-base utoff urrent Figure 6. Emitter-Base utoff urrent 20 Fairchild Semiconductor orporation www.fairchildsemi.com FMBS2383 Rev. A0 2

Typical Performance haracteristics (ontinued) ob [pf], Output apacitance Transient Thermal Resistance, Rthja 0 0 2 4 6 8 0 2 00 0 40 35 30 25 20 5 0. 50% 30% 0% 5% 2% D=% V B [V], ollector-base Voltage Figure 7. Output apacitance Single Pulse f = MHz Rthja=200/W ib [pf], Input apacitance 250 200 50 00 0 2 3 4 5 V B [V], ollector-base Voltage Figure 8. Input apacitance f = MHz 0.0 E-4 E-3 0.0 0. 0 00 000 time(sec) Figure 9. Transient Thermal Resistance 20 Fairchild Semiconductor orporation www.fairchildsemi.com FMBS2383 Rev. A0 3

Physical Dimensions SuperSOT TM -6 Dimensions in Millimeters 20 Fairchild Semiconductor orporation www.fairchildsemi.com FMBS2383 Rev. A0 4

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