l Adavanced Process Technology l Ultra Low OnResistance l PChannel MOFET l urface Mount l Available in Tape & Reel l ynamic dv/dt Rating l Fast witching escription Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The O8 has been modified through a customized leadframe for enhanced thermal characteristics and dualdie capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. G 1 2 3 4 5 Top View P 9.1104B IRF7205 HEXFET Power MOFET 8 7 6 A O8 V = 30V R (on) = 0.070Ω I = 4.6A Absolute Maximum Ratings Parameter Max. Units I @ T A = 25 C Continuous rain Current, V G @ 10V 4.6 I @ T A = 70 C Continuous rain Current, V G @ 10V 3.7 A I M Pulsed rain Current 15 P @T C = 25 C Power issipation 2.5 W Linear erating Factor 0.020 W/ C V G Gatetoource Voltage ± 20 V dv/dt Peak iode Recovery dv/dt 3.0 V/n T J, T TG Junction and torage Temperature Range 55 to 150 C Thermal Resistance Ratings Parameter Min. Typ. Max. Units R θja Maximum JunctiontoAmbient 50 C/W 8/25/97
Electrical Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR) raintoource Breakdown Voltage 30 V V G = 0V, I = 250µA V (BR) / T J Breakdown Voltage Temp. Coefficient 0.024 V/ C Reference to 25 C, I = 1mA R (ON) tatic raintoource OnResistance 0.070 V G = 10V, I = 4.6A ƒ Ω 0.130 V G = 4.5V, I = 2.0A ƒ V G(th) Gate Threshold Voltage 1.0 3.0 V V = V G, I = 250µA g fs Forward Transconductance 6.6 V = 15V, I = 4.6A ƒ I raintoource Leakage Current 1.0 V = 24V, V G = 0V µa 5.0 V = 15V, V G = 0V, T J = 70 C Gatetoource Forward Leakage 100 V G = 20V I G na Gatetoource Reverse Leakage 100 V G = 20V Q g Total Gate Charge 27 40 I = 4.6A Q gs Gatetoource Charge 5.2 nc V = 15V Q gd Gatetorain ("Miller") Charge 7.5 V G = 10V ƒ t d(on) TurnOn elay Time 14 30 V = 15V t r Rise Time 21 60 I = 1.0A ns t d(off) TurnOff elay Time 97 150 R G = 6.0Ω t f Fall Time 71 100 R = 10Ω ƒ L Internal rain Inductance 2.5 Between lead,6mm(0.25in.) nh G from package and center L Internal ource Inductance 4.0 of die contact C iss Input Capacitance 870 V G = 0V C oss Output Capacitance 720 pf V = 10V C rss Reverse Transfer Capacitance 220 ƒ = 1.0MHz ourcerain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous ource Current MOFET symbol 2.5 (Body iode) showing the A I M Pulsed ource Current integral reverse G 15 (Body iode) pn junction diode. V iode Forward Voltage 1.2 V T J = 25 C, I = 1.25A, V G = 0V ƒ t rr Reverse Recovery Time 70 100 ns T J = 25 C, I F = 4.6A Q rr Reverse RecoveryCharge 100 180 nc di/dt = 100A/µs ƒ t on Forward TurnOn Time Intrinsic turnon time is negligible (turnon is dominated by L L ) Notes: Repetitive rating; pulse width limited by max. junction temperature. ƒ Pulse width 300µs; duty cycle 2%. I 4.6A, di/dt 90A/µs, V V (BR), T J 150 C urface mounted on FR4 board, t 10sec.
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V R R G V G.U.T. V 10V Pulse Width 1 µs uty Factor 0.1 % Fig 10a. witching Time Test Circuit V G t d(on) t r t d(off) t f 10% 90% V Fig 10b. witching Time Waveforms 100 Thermal Response (Z thja ) 10 1 = 0.50 0.20 0.10 0.05 0.02 0.01 INGLE PULE t2 (THERMAL REPONE) Notes: 1. uty factor = t 1 / t 2 2. Peak T J = P M x Z thja TA 0.1 0.0001 0.001 0.01 0.1 1 10 100 t 1, Rectangular Pulse uration (sec) PM t1 Fig 11. Maximum Effective Transient Thermal Impedance, JunctiontoAmbient
Current Regulator ame Type as.u.t. 10V Q G 12V.2µF 50KΩ.3µF Q G Q G.U.T. V V G V G 3mA Charge I G I Current ampling Resistors Fig 12a. Basic Gate Charge Waveform Fig 12b. Gate Charge Test Circuit
Peak iode Recovery dv/dt Test Circuit IRF7205.U.T* ƒ Circuit Layout Considerations Low tray Inductance Ground Plane Low Leakage Inductance Current Transformer V G R G dv/dt controlled by R G I controlled by uty Factor "".U.T. evice Under Test V * Reverse Polarity of.u.t for PChannel river Gate rive Period P.W. = P.W. Period [ V G =10V] ***.U.T. I Waveform Reverse Recovery Current ReApplied Voltage Body iode Forward Current di/dt.u.t. V Waveform iode Recovery dv/dt Inductor Curent Body iode Ripple 5% Forward rop [ V ] [ ] I *** V G = 5.0V for Logic Level and 3V rive evices Fig 13. For PChannel HEXFET
Package Outline O8 Outline 5 E A B 5 8 7 6 5 1 2 3 4 H 0.25 (.010) M A M e 6X e1 K x 45 θ A C 0.10 (.004) L 6 B 8X A1 8X 0.25 (.010) M C A B NOTE: 1. IMENIONING AN TOLERANCING PER ANI Y14.5M1982. 2. CONTROLLING IMENION : INCH. 3. IMENION ARE HOWN IN MILLIMETER (INCHE). 4. OUTLINE CONFORM TO JEEC OUTLINE M012AA. 5 IMENION OE NOT INCLUE MOL PROTRUION MOL PROTRUION NOT TO EXCEE 0.25 (.006). 6 IMENION I THE LENGTH OF LEA FOR OLERING TO A UBTRATE.. C 8X INCHE MILLIMETER IM MIN MAX MIN MAX A.0532.0688 1.35 1.75 A1.0040.0098 0.10 0.25 B.014.018 0.36 0.46 C.0075.0098 0.19 0.25.189.196 4.80 4.98 E.150.157 3.81 3.99 e.050 BAIC 1.27 BAIC e1.025 BAIC 0.635 BAIC H.2284.2440 5.80 6.20 K.011.019 0.28 0.48 L 0.16.050 0.41 1.27 θ 0 8 0 8 RECOMMENE FOOTPRINT 6.46 (.255 ) 1.27 (.050 ) 3X 0.72 (.028 ) 8X 1.78 (.070) 8X Part Marking Information O8 EXAMPLE : THI I AN IRF7101 INTERNATIONAL RECTIFIER LOGO F7101 TOP 312 ATE COE (YWW) Y = LAT IGIT OF THE YEAR WW = WEEK PART NUMBER W AFER LOT COE (LAT 4 IGIT) XXXX BOTTOM
Tape & Reel Information O8 imensions are shown in millimeters (inches) IRF7205 TERMINAL NUMBER 1 12.3 (.484 ) 11.7 (.461 ) 8.1 (.318 ) 7.9 (.312 ) FEE IRECTION NOTE: 1. CONTROLLING IMENION : MILLIMETER. 2. ALL IMENION ARE HOW N IN MILLIMETER(INCHE). 3. OUTLINE CONFORM TO EIA481 & EIA541. 330.00 (12.992) M A X. NOTE : 1. CONTRO LLING IMENION : MILLIMETER. 2. OUTLINE CONFORM TO EIA481 & EIA541. 14.40 (.566 ) 12.40 (.488 ) WORL HEAQUARTER: 233 Kansas t., El egundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEAQUARTER: Hurst Green, Oxted, urrey RH8 9BB, UK Tel: 44 1883 732020 IR CANAA: 7321 Victoria Park Ave., uite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: aalburgstrasse 157, 61350 Bad Homburg Tel: 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: 39 11 451 0111 IR FAR EAT: K&H Bldg., 2F, 304 NishiIkebukuro 3Chome, ToshimaKu, Tokyo Japan 171 Tel: 81 3 3983 0086 IR OUTHEAT AIA: 315 Outram Road, #1002 Tan Boon Liat Building, ingapore 0316 Tel: 65 221 8371 http://www.irf.com/ ata and specifications subject to change without notice. 8/97