HiPerFAST TM IGBT IXGR 4N6C2 ISOPLUS247 TM IXGR 4N6C2D C2-Class High Speed IGBTs (Electrically Isolated Back Surface) S = 6 V 25 = 56 A (SAT) = 2.7 V t fi(typ = 32 ns Preliminary Data Sheet IXGR_C2 IXGR_C2D Symbol Test Conditions Maximum Ratings S = 25 C to 5 C 6 V V CGR = 25 C to 5 C; R GE = MΩ 6 V V GES Continuous ±2 V V GEM Transient ±3 V 25 = 25 C 56 A = C 26 A I D = C (4N6C2D) 27 A M = 25 C, ms 2 A SSOA V GE = 5 V, = 25 C, R G = Ω M = 8 A (RBSOA) Clamped inductive load @ 6 V P C = 25 C 7 W -55... +5 C M 5 C T stg -55... +5 C Maximum Lead temperature for soldering 3 C.6 mm (.62 in.) from case for s V ISOL 5/6 Hz, RMS, t = minute, I ISOL < ma 25 V~ F C Mounting force 2..2/4.5..25 N/lb. Weight 4 g Symbol Test Conditions Characteristic Values ( = 25 C unless otherwise specified) min. typ. max. ISOPLUS 247 TM (IXGR) G = Gate E = Emitter Features G C E DCB Isolated mounting tab Meets TO-247AD package Outline High current handling capability Latest generation HDMOS TM process MOS Gate turn-on - drive simplicity Applications Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC choppers Advantages Easy assembly High power density C = Collector ISOLATED TAB Very fast switching speeds for high frequency applications BS = 25μA, V GE = V 6 V V GE(th) = 25 μa, = V GE 3. 5. V ES = S 4N6C2 5 μa V GE = V 4N6C2/D μa I GES = V, V GE = ±2 V ± na (sat) = 3 A, V GE = 5 V = 25 C 2.2 2.7 V = 25 C 2. V 25 IXYS All rights reserved DS9952C(/5)
IXGR 4N6C2 IXGR 4N6C2D Symbol Test Conditions Characteristic Values ( = 25 C unless otherwise specified) min. typ. max. g fs = 3 A; = V, 2 36 S Pulse test, t 3 μs, duty cycle 2 % C ies 25 pf C oes = 25 V, V GE = V, f = MHz 4N6C2 8 pf 4N6C2D 22 pf C res 54 pf Q g 95 nc Q ge = 3 A, V GE = 5 V, =.5 S 4 nc Q gc 36 nc t d(on) 8 ns t ri Inductive load, = 25 C 2 ns t = 3 A, V GE = 5 V d(off) 9 4 ns V t CE = 4 V, R G = R off = 3 Ω fi 32 ns.2.37 mj t d(on) 8 ns t ri 2 ns Inductive load, T E J = 25 C on 4N6C2.3 mj = 3 A, V GE = 5 V 4N6C2D.6 mj t d(off) = 4 V, R G = R off = 3 Ω 3 ns t fi 8 24 ns.5 mj ISOPLUS 247 Outline R thj-dcb (Note ).26 K/W R thjc (Note 2).74 K/W R thcs.5 K/W Reverse Diode (FRED) (D Version Only) Characteristic Values ( = 25 C unless otherwise specified) Symbol Test Conditions min. typ. max. V F = 3 A, V GE = V, Pulse test =5 C.6 V t 3 μs, duty cycle d 2 % = 25 C 2.5 V I RM = 3 A, V GE = V, -di F = A/μs, = C 4 A t rr = V ns t rr = A; -di = A/μs; = 3 V 25 ns R thjc.5 K/W R thcs.5 K/W Notes:. R thj-dcb is the thermal resistance junction-to-internal side of DCB substrate 2. R thjc is the thermal resistance junction-to-external side of DCB substrate IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,93,844 5,49,96 5,237,48 6,62,665 6,44,65 B 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,85,72 5,7,58 5,63,37 5,38,25 6,259,23 B 6,534,343 6,7,45B2 6,759,692 4,88,6 5,34,796 5,87,7 5,486,75 6,36,728 B 6,583,55 6,7,463 677478 B2
IXGR 4N6C2 IXGR 4N6C2D Fig.. Output Characteristics @ 25 Deg. C Fig. 2. Extended Output Characteristics @ 25 deg. C 6 5 4 3 2 = 5V 3V V 9V 7V 2 8 5 2 9 6 = 5V 3V V 9V 7V 5V.5.5 2 2.5 3 3.5 3 5V 2 3 4 5 6 7 Fig. 3. Output Characteristics @ 25 Deg. C Fig. 4. Temperature Dependence of (sat) 6 5 4 3 2 = 5V 3V V 9V 7V (sat) - Normalized.3.2..9.8 = 5V = 6A = 3A 5V.7 = 5A.5.5 2 2.5 3.6 25 5 75 25 5 - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emiiter voltage Fig. 6. Input Admittance 4 2 3.5 = 25ºC 8 3 2.5 2.5 = 6A 3A 5A 5 2 9 6 3 = 25ºC 25ºC -4ºC 5 6 7 8 9 2 3 4 5 4 5 6 7 8 9 25 IXYS All rights reserved
IXGR 4N6C2 IXGR 4N6C2D Fig. 7. Transconductance Fig. 8. Dependence of on R G 7.8 g f s - Siemens 6 5 4 3 2 = -4ºC 25ºC 25ºC - millijoules.6.4.2.8.6.4.2 = 25ºC = 5V = 4V = 6A = 45A = 3A = 5A 3 6 9 2 5 8 2 4 6 8 2 4 6 R G - Ohms Fig. 9. Dependence of on I c Fig.. Dependence of on Temperature.6.4 R G = 3 Ohms R G = Ohms - - - - -.6.4 R G = 3 Ohms R G = Ohms - - - - - - MilliJoules.2.8.6.4 = 5V = 4V = 25ºC - millijoules.2.8.6.4 = 5V = 4V = 6A = 45A = 3A.2 = 25ºC 2 3 4 5 6.2 = 5A 25 5 75 25 - Degrees Centigrade Fig.. Gate Charge Fig. 2. Capacitance 5 2 9 6 = 3V = 3A I G = ma Capacitance - p F f = MHz Cies Coes 3 Cres 2 4 6 8 Q IXYS reserves the right to change G - nanocoulombs limits, test conditions, and dimensions. 5 5 2 25 3 35 4
IXGR 4N6C2 IXGR 4N6C2D Fig. 3. Maximum Transient Thermal Resistance.8.7.6 R (th) J C - (ºC/W).5.4.3.2. Pulse Width - milliseconds 25 IXYS All rights reserved
IXGR 4N6C2 IXGR 4N6C2D IF 6 A 5 4 =5 C Q r nc 8 6 = C = 3V = 6A = 3A = 5A I RM 3 A 25 2 = C = 3V = 6A = 3A = 5A 3 2 = C =25 C 4 2 5 5 2 3 V A/μs 2 4 6 A/μs 8 V F -di F -di F Fig. 4. Forward current versus V F Fig. 5. Reverse recovery charge Q r versus -di F Fig. 6. Peak reverse current I RM versus -di F K f 2..5. I RM t rr 9 ns 8 = 6A = 3A = 5A = C = 3V V FR 2 V 5 = C = 3A t fr V FR. μs t fr.75.5 7.5 Q r 5.25 T. 6. -di F di F 4 8 2 C 6 2 4 6 A/μs 8 2 4 6 A/μs 8 VJ Fig. 7. Dynamic parameters Q r, I RM Fig. 8. Recovery time t rr versus -di F Fig. 9. Peak forward voltage V FR and versus t fr versus di F K/W Z thjc Z thjc - K/W........... s.... t Time - Seconds Fig. 2. Transient thermal resistance junction to case IXYS reserves the right to change limits, test conditions, and dimensions. DSEP 29-6