May 4 th, 2011 Semiconductor Technology Evolution to optimize inverter efficiency Andrea Merello Field Applications Engineer Page 1
More than 70% of the energy gets lost on its way to the target application Electricity Generation Transmission & Distribution Consumption (example Notebook) Stone Coal power plant AC- Transmission Power Distribution Power Supply DC supply Processor 220 W (ca. value) 90 W electricity Mostly thermal losses 1.4 W 3.6 W 13 W 13 W 60 W Memory Display 130 W (~60%) etc. Losses: 31 W Source: Infineon estimate Page 2
Based on innovative solutions of Infineon it is possible to save the majority of power Electricity Generation Transmission & Distribution Consumption (example Notebook) Off-shore Wind Power Plant HVDC Transmission Advanced Distribution 90 plus Power Supply DC supply Processor 85 W (ca. value) 77 W electricity 8 W ~9% 1.2 W 2.3 W 5 W 60 W 7 W Memory Display etc. Losses: 15.5 W Infineon solutions are of special relevance @ Electricity Generation & Consuption Source: Infineon estimate Page 3
What is Infineon? Automotive Power Chip Card #1 #1 #1 Market share Market share Market share 9% 11% 27% Calendar Year 2009 Source: Strategy Analytics, May 2010 Calendar Year 2009 Source: IMS Research, July 2010 Calendar Year 2009 Source: Frost & Sullivan, October 2010 01/02/2011 Page Page 4 4
Infineon at a Glance Infineon provides semiconductor and system solutions, focusing on three central needs of our modern society: Energy Efficiency, Mobility and Security Revenue in FY 2010*: 3.295 billion EUR 27,315** employees worldwide (as of December 2010) More than 21 R&D locations Germany s largest semiconductor company Energy Efficiency Mobility Security *Note: Figures according to IFRS with Wireline and Wireless as discontinued operations; as of September 30, 2010 **Note: Including Wireless as discontinued operations; as of December 31, 2010 01/02/2011 Page Page 5 5
Typical Microinverter Topology - Current Source primary side HF switching / secondary side 50 Hz unfolding bridge Primary side Secondary side 30V DC Array High speed switching 230V AC High speed switching 50Hz switching Description: One of some possibilities with 2 stage approach Losses of semiconductors Seek for better Rdson*Qoss-Qgd in mosfets to reduce Switching/Conduction losses Seek for better Rdson*Qg in mosfets to reduce driving losses Seek for better Diodes technology to reduce switching losses Page 6
Input Stage with OptiMOS Gate High efficiency* *Consider that in a 200W typ u-inverter, 1W is already a loss of 0.5%! Target eff. are in the range of 95% CeC 30V DC Primary side Secondary side High speed switching 230V AC 160 Infineon Next Best Competitor 6000 120 5000 4000 80 3000 40 RDS(on) 2000 1000 FOM RDS(on) *Qg 0 25 30 40 60 75 80 100 120 150 200 250 V 0 25 30 40 60 75 80 100 120 150 200 250 V Low voltage MOS: typically 60V and 150V Lowest FOM RDS(on) x Qg Best gate drive efficiency Lowest Rdson and reduction of output capacitance Best switching efficiency Page 7
Figure of Merit [mohmxnc] OptiMOS, the low voltage mosfet increase efficiency in all load conditions How is performance improvement achieved? Relevant improvement in Figures of Merit 120.0 100.0 Drive stage losses -45% OptiMOS 3 New OptiMOS 25V -70% 80.0-50% Capacitive switching losses 60.0 Commutation crossing losses 40.0-50% -45% 20.0 0.0 FOMg(Vgs=4.5V),typ FOMg(Vgs=4.5),typ FOMg(Vgs=10V),typ FOMg(Vgs=10),typ FOMgd(Vgs=4.5V),typ FOMgd(Vgs=10V),typ FOMQoss FOMQoss (Vgs=10V),typ Rdson*Qg Rdson*Qg Rdson*Qgd (Vgs=4.5V,typ Rdson*Qoss Comparison for BSC050NE2LS New OptiMOS 25V and BSC090N03LS OptiMOS 3 Page 8
Output Stage with mosfets Primary side Secondary side 30V DC Which switching technique? 230V AC uinverter output currents are in the typ range of 1Arms Currents are low enough to use hard switching Mosfets Robust body diodes are necessary for transient conditions Good and fast recovery diodes are necessary for hard switching Good and fast recovery diodes are necessary for cos(f) correction (if required by any future regulation) So which mosfets should we use here? Page 9
Discrete CoolMOS TM Portfolio 500V C3 CP 600V C3 CP C6/E6 CFD 650V 800V 900V C3 C6/E6 CFD2 C3 C3 Page 10
CoolMOS TM, the SuperJunction mosfet FOM comparison 12 10 S G Best conventional Planar mosfet Si-Limit CoolMOS C3 Ron*A [Ohm*mm²] 8 6 4 D CoolMOS CP CoolMOS C6/E6 2 0 CoolMOS server series 400 500 600 700 800 900 Breakdown voltage [V] CoolMOS series breaks MORE the silicon limit! Page 11
Output VS Inverter example on H4-Bridge, Single phase Advantages in terms of High efficiency Lower cost Lower complexity Lower weight Different PWM schemes generate different panel potential issues Different PWM schemes generate different choice for semiconductors, i.e. asymmetric switching open the usage of Mosfet+IGBT 50Hz high side TrenchStop IGBTs HF low side CoolMOS CFD2 MosFETs Transients require hard switching and good body diode Page 12
27 µc in vs C6 type Comparison of reverse recovery charge: 80 mohm types at rated nominal current CFD is a 600V technology, CFD2 is a 650V technology Why CFD2 is a 650V class? CoolMOS Power Mosfet With enanched body diode To handle both SOLAR and SMPS higher voltage requirements Better price/performance What more? Better light load efficiency Better EMI behavior Better Commutation behavior 3.0 Reverse recovery charge [µc] 2.5 2.0 20 15 Ids_SPW47N60CFD Ids_IPW65R080CFD 1.5 1.0 0.5 0.0 Id [A] 10 5 0-5 0.25 0.3 0.35 0.4 0.45 0.5 time [µs] Page 13
EFFICIENCY [%] Efficiency measurement in IFX-ZVS Phase Shifted Full Bridge Demoboard 96 95 94 +0.3% 93 92 SPW47N60CFD Rgon=2R7 and Rgoff=0R 91 +0.7% IPW65R080CFD Rgon=2R7 and Rgoff=0R 90 0 200 400 600 800 1000 1200 1400 OUTPUT POWER [W] Efficiency of IPW65R080CFD is over the whole output power much better than SPW47N60CFD (low load~0.7% and full load~0.3%). Page 14
U [V] Comparison of Hard commutation of body diode di/dt >1000A/µs, If 20A, Rg 5.6 Ohm, 25 C 800 600 Only 50V overshoot with CFD2 400 T=25 C; If=20A; Rg,d=5.6 Ohm; Ugs=13V 452V 676V 569V SPW47NM60CFD IPW65R080CFD Comp2 43A and >270V overshoot With competing SJ technology 200 versus 170V with CoolMOS CFD 0 0 100 200 300 400 500 t [µs] 224V less overshoot with CFD2 for reliable systems Page 15
Single phase solution, isolated Boost + LLC + isolation + 3-level DC/AC stage Boost Isolation + Rectification DC/AC stage D1 S3 S5 D2..5 S8..9 230V AC 150..450V DC S1 S2 S4 S6..7 Another example: the resonant bridge Resonant bridges and ZVS allow current free-wheeling in the switches A robust body diode is needed. CoolMOS C6 HV mosfet transistors have optimized body diode Good recovery is not mandatory as for hard switching bridges CoolMOS CFD HV mosfet transistors have best Reverse recovery behavior for both soft and hard switching bridges Page 16
Output VS Inverter example on H4-Bridge, Single phase Best advantages in terms of High efficiency Lower cost Lower complexity Lower weight Different PWM schemes generate different panel potential issues Different PWM schemes generate different choice for semiconductors, i.e. asymmetric switching open the usage of Mosfet+IGBT 50Hz high side TrenchStop IGBTs HF low side CoolMOS CFD2 MosFETs Transients require hard switching and good body diode Page 17
Discrete IGBTs portfolio 600V IGBTs FAST High Speed RC-D(F) TrenchStop Reverse Conducting 1200V IGBTs FAST TrenchStop High Speed Reverse conducting Page 18
VCE sat [V] Switching losses [µj/a] VCE sat [V] Switching losses [µj/a] IGBT High Speed 3 and TrenchStop series 600V IGBT 1200V IGBT 6 5 VCEsat 60 50 12 10 VCEsat Switching loss 120 100 4 Switching loss 40 8 80 3 30 6 60 2 20 4 40 1 10 2 20 0 Trench Stop High speed 3 0 0 Trench Stop High speed 3 0 Loss reduction down to 40 µj/a possible with SiC Schottky barrier diode and low Rg Page 19
Loss contribution [% of output power] 1200V HS3 IGBT shows clear system benefits in Boost stage: 5 kw, 16 khz, Vin 500V, Vout 800V 0.9 0.8 0.7 0.6 Qc contribution diode Conduction loss diode / SR Switching loss HF switch Conduction loss HF switch 0.5 0.4 0.3 0.2 0.1 0 Trench Stop High speed With Infineon SiC diodes thinq! tm Page 20
3-level inverter with dual boost D1 S3 3-level inverter (3 times for 3 phase solution) 500..1000V DC CoolMOS C6 S1 S2 thinq! SiC thinq! SiC D3 D4 S5 S6 TrenchStop HighSpeed3 CoolMOS CFD 230V AC S4 D2 Gate driver ICs Infineon provides power silicon for full inverter design Schottky Silicon Carbide diodes as well And IGBT and Mosfet gate drivers with Coreless Transformer isolation Page 21
Infineon is in continuous evolution to offer the full semiconductor portfolio for Renewable Energies Infineon provides technologies in continuous evolution to serve market needs Infineon provides solutions for several hundreds Watt up to some hundreds kw Power modules and stacks Semiconductor discretes Gate drivers and PWM controllers Microcontrollers Sensors and current sensors Page 22