Focused Ion beam nanopatterning: potential application in photovoltaics

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1 Focused Ion beam nanopatterning: potential application in photovoltaics Research Infrastructure: Location: FIB-Focused Ion Beam ENEA Portici (Italy) Date March, Speakers: Vera La Ferrara, ENEA UTTP-MDB (FIB application: Giuseppe Nenna, ENEA UTTP-NANO (optoelectronic devices: Moderator: Franco Roca, ENEA UTTP (European and International Projects Coordination:

2 FOCUSED ION BEAM (FEI QUANTA 200 3D) Ion risolution: pA SEM Dual Beam (Focused Ion Beam & SEM) GIS FIB 1. Vacuum system 2. Electron column (SEM) 3. LMIS Ga + Ion column (FIB) 4. Gas injection system (GIS) 5. Sample stage SEM FIB STAGE

3 BASIC FUNCTIONS Emission of secondary ions and electrons FIB imaging Low ion current Sputtering of substrate atoms FIB milling High ion current Chemical interactions between platinum metallorganic gas and ion beam FIB deposition Depends on working conditions: the ion dose

4 FIB is currently used: in semiconductor industry to chip repair for device cross section for TEM lamellae preparation for imaging for nanodevice fabrication

5 Advantages & disadvantages ADVANTAGES DISADVANTAGES maskeless patterning (no resist exposure necessary) gallium affects morphology (optimization of working conditions) direct material modification (milling, sputtering, implantation on different materials: metals, semiconductors, polymers) high dose (LONG EXPOSURE) for large area device Time-consuming and expensive procedure for large area device High resolution <30 nm Prototypes - Masters Proof-of-principle studies Small area can be easily nanopatterned Efforts to develop low cost other nanoindentation processes for large area applications

6 FIB ACTIVITIES in ENEA NANODEVICE APPLICATIONS based on nanowires/nanostructures DEVICE CROSS SECTION IMAGING POTENTIAL APPLICATIONS in OLED and PV fields

7 NANODEVICE FABRICATION Silicon wafer Strategies: 1. FIB Pt deposition & dielectrophoresis 2. FIB Pt deposition at the end dielettroforesi nanowire/nanostructure deposited onto device Electrolyte solution SiO 2 layer deposited by e-beam evaporation Cr/Au pads Cr/Au pads Cr/Au pads deposited by e-beam evaporation Platinum microelectrodes nanoelectrodes deposited deposited by FIB by FIB W=150 nm, H=500 nm F DEP Re K Function Generator 3 2 Re K R Eˆ Clausius-Mossotti Factor p p m m 2 m Di Francia, La Ferrara and Alfano Le Scienze, Italian Edition of Scientific American2009 MW 3 m p p m p 2 m MW

8 Hydrogen sensor FIB&DEP Palladium nanowire NH 3 sensor FIB Pt electrodes a single rope of SWCNTs (50 nm) Pt electrodes V. La Ferrara et al, Sensors and transducers 2007 Array and single Pd nanowire V. La Ferrara et al. 1. Italian Patent (2007) RM2007A IEEE Transactions on Nanotechnology, Journal of Nanoscience and Nanotechnology Microelectronic Engineering 2011 ZnO nanostructures for photodetector device V. La Ferrara et al., Electrophoresis 2012 and work in progress FIB&DEP Graphene multilayer flake La Ferrara, La Ferrara, La Polichetti, Ferrara, Polichetti, Miglietta, Polichetti, Miglietta, Massera, Miglietta, Massera, Di Francia Di Massera, Francia et et Di al.. In al.. Proc. Francia In Proc. of I Workshop of et I Workshop ENEA al.. In Proc. ENEA on Graphene, of on I Graphene, 2010, Workshop 2010, ENEA ENEA ENEA - Italy - Italy on Graphene, 2010, ENEA - Italy To be improved (gallium contamination affects IV) FIB FIB&DEP To be improved the quality of grahene solution graphene

9 NANODEVICE FABRICATION MICROLENS OPTICAL FIBER with Andrea Cusano et al. University of Benevento Italy LENTE 3 with Giuseppe Nobile&Giuseppe Nenna ENEA UTTP-NANO (2010)

10 CROSS SECTION R(%) Coaxial electrospinning of microfibres with liquid crystal in the core Eva Enz,Vera La Ferrara,Jan Lagerwall*, and Giusy Scalia* *Graduate School of Convergence Science and Technology Seoul National University, Korea Submitted to ACS NANO (nm) POROUS SILICON ON C-SI WAFER AS BRAGG REFLECTOR FOR PV M. Della Noce, A. De Maria, V. La Ferrara, L. Lancellotti, L. V. Mercaldo, Aneesh P. M., M.Tucci and P.Delli Veneri in Conference proceedings EU PVSEC 2012

11 CROSS SECTION OLED and solar cells With Nenna, De Girolamo Del Mauro et al. - ENEA UTTP-NANO ITO/P3HT:CdS/Al solar cell devices ( with Di Luccio et al. - ENEA UTTP-NANO) Masala, S., Del Gobbo, S., Borriello, C., Bizzarro, V., La Ferrara, V., Re, M., Pesce, E., Minarini, C., De Crescenzi, M., Di Luccio, T. (2011) Journal of Nanoparticle Research, 13 (12), pp

12 IMPLANTATION ENAHNCED WET CHEMICAL ETCHING for material texturing First FIB milling on silicon. Rapid processing (1mm then KOH etching Glass PDMS Rapid processing (1mm

13 LIGHT TRAPPING ENHANCEMENT FOR PV CELLS ABSORBED CURRENT GENERATED DURING MILLING THROUGH A MULTILAYER STRUCTURE CAN BE USED TO IDENTIFY DIFFERENT MATERIALS EPM milling 2,10E-010 2,00E na 4x2micron z=250nm with Andrea Cusano et al., University of Benevento (Italy) 1,90E-010 1,80E-010 nsiox Current[A] 1,70E-010 1,60E-010 1,50E-010 glass 1,40E-010 1,30E-010 1,20E Time[s] AFM Depth (nm) V. La Ferrara et al. Focused ion beam strategy for nanostructure milling in doped silicon oxide layer for light trapping applications under revision Vacuum Length (nm)

14 Photonic crystal electrode for enhanced light extraction in OLED combining Electron Beam Lithography (EBL) and Focused Ion beam (FIB) processes enhancing the performance of the realized photonic crystal (PC) structure EBL FIB And now Giuseppe Nenna will explain Petti, L., Rippa, M., Capasso, R., Nenna, G., De Girolamo Del Mauro, A., La Ferrara, V., Pacheri Madathil, A., Minarini, C.Photonic crystal electrode to be used in organic led structures(2013) Journal of the European Optical Society, 8, p

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