BTA06 and BTB06 Series
|
|
- Griselda Randall
- 7 years ago
- Views:
Transcription
1 BTA6 and BTB6 Series SNUBBERLESS, LOGIC LEVEL & STANDARD 6A TRIACS Table : Main Features Symbol Value Unit I T(RMS) 6 A V DRM /V RRM 6 and 8 V G A A I GT (Q ) 5 to 5 ma A DESCRIPTION Available either in through-hole or surface-mount packages, the BTA6 and BTB6 triac series is suitable for general purpose AC switching. They can be used as an ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits... or for phase control operation in light dimmers, motor speed controllers,... A A G TO-AB Insulated (BTA6) A A G TO-AB (BTB6) The snubberless and logic level versions (BTA/ BTB...W) are specially recommended for use on inductive loads, thanks to their high commutation performances. By using an internal ceramic pad, the BTA series provides voltage insulated tab (rated at 5V RMS ) complying with UL standards (File ref.: E8734). Table : Order Codes Part Number BTA6-xxxxxRG BTB6-xxxxxRG Marking See page table 8 on page 6 Table 3: Absolute Maximum Ratings Symbol Parameter Value Unit I T(RMS) RMS on-state current (full sine TO-AB T c = C wave) TO-AB Ins. T c = 5 C 6 A I TSM Non repetitive surge peak on-state F = 5 Hz t = ms 6 current (full cycle, T j initial = 5 C) F = 6 Hz t = 6.7 ms 63 A I ² t I ² t Value for fusing t p = ms A ² s di/dt Critical rate of rise of on-state current I G = x I GT, t r ns F = Hz T j = 5 C 5 A/µs I GM Peak gate current t p = µs T j = 5 C 4 A P G(AV) Average gate power dissipation T j = 5 C W T stg T j Storage junction temperature range Operating junction temperature range - 4 to to + 5 C February 6 REV. 6 /7
2 Tables 4: Electrical Characteristics (T j = 5 C, unless otherwise specified) SNUBBERLESS and Logic Level (3 quadrants) Symbol Test Conditions Quadrant BTA6 / BTB6 TW SW CW BW Unit I GT () I - II - III MAX ma V D = V R L = 3 Ω V GT I - II - III MAX..3 V V GD V D = V DRM R L = 3.3 kω T j = 5 C I - II - III MIN.. V I H () I T = ma MAX ma I - III I L I G =. I GT MAX. II ma dv/dt () V D = 67 %V DRM gate open T j = 5 C MIN. 4 4 V/µs (dv/dt)c =. V/µs T j = 5 C (di/dt)c () (dv/dt)c = V/µs T j = 5 C MIN A/ms Without snubber T j = 5 C Standard (4 quadrants) Symbol Test Conditions Quadrant BTA6 / BTB6 I GT () I - II - III 5 5 MAX. V D = V R L = 3 Ω IV 5 ma V GT ALL MAX..3 V V GD V D = V DRM R L = 3.3 kω T j = 5 C ALL MIN.. V I H () I T = 5 ma MAX. 5 5 ma I - III - IV 4 5 I L I G =. I GT MAX. II 8 ma dv/dt () V D = 67 %V DRM gate open T j = 5 C MIN. 4 V/µs (dv/dt)c () (di/dt)c =.7 A/ms T j = 5 C MIN. 5 V/µs C B Unit Table 5: Static Characteristics Symbol Test Conditions Value Unit V TM () I TM = 8.5 A t p = 38 µs T j = 5 C MAX..55 V V t () Threshold voltage T j = 5 C MAX..85 V R d () Dynamic resistance T j = 5 C MAX. 6 mω I DRM T j = 5 C 5 µa V I DRM = V RRM MAX. RRM T j = 5 C ma Note : minimum I GT is guaranted at 5% of I GT max. Note : for both polarities of A referenced to A. /7
3 Table 6: Thermal resistance Symbol Parameter Value Unit R th(j-c) R th(j-a) Junction to case (AC) Junction to ambient TO-AB.8 TO-AB Insulated.7 TO-AB TO-AB Insulated C/W 6 C/W Figure : Maximum power dissipation versus RMS on-state current (full cycle) Figure : RMS on-state current versus case temperature (full cycle) P(W) I T(RMS) (A) I T(RMS) (A) T C( C) BTA BTB Figure 3: Relative variation of thermal impedance versus pulse duration Figure 4: On-state characteristics (maximum values) E+ K=[Z th/rth] Zth(j-c) I TM(A) Tj max. V t =.85V R d = 6 mω T= j Tj max. E- Zth(j-a) t p(s) E- E-3 E- E- E+ E+ E+ 5E+ V TM(V) /7
4 Figure 5: Surge peak on-state current versus number of cycles Figure 6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width t p < ms and corresponding value of I t I TSM(A) Repetitive T C=5 C Non repetitive Tj initial=5 C Number of cycles t=ms One cycle I TSM(A), I t (A s) di/dt limitation: 5A/µs Tj initial=5 C t p(ms).... ITSM I t Figure 7: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values) Figure 8: Relative variation of critical rate of decrease of main current versus (dv/dt)c (typical values) (Snubberless & logic level types) I GT,I H,I L[T] j / I GT,I H,I L[T j=5 C] IH & IL IGT T j( C) (di/dt)c [(dv/dt)c] / Specified (di/dt)c TW BW/CW.. SW (dv/dt)c (V/µs)..... Figure 9: Relative variation of critical rate of decrease of main current versus (dv/dt)c (typical values) (Standard types) Figure : Relative variation of critical rate of decrease of main current versus junction temperature (di/dt)c [(dv/dt)c] / Specified (di/dt)c..8.6 C.4. B (dv/dt)c (V/µs)..... (di/dt)c [T j ] / (di/dt)c [T j specified] T j( C) /7
5 Figure : Ordering Information Scheme BT A 6-6 BW (RG) Triac series Insulation A = insulated B = non insulated Current 6 = 6A Voltage 6 = 6V 8 = 8V Sensitivity and type B = 5mA Standard C = 5mA Standard SW = ma Logic Level Packing mode RG = Tube BW = 5mA Snubberless CW = 35mA Snubberless TW = 5mA Logic Level Table 7: Product Selector Part Number Voltage (xxx) Sensitivity Type 6 V 8 V Package BTA/BTB6-xxxB X X 5 ma Standard TO-AB BTA/BTB6-xxxBW X X 5 ma Snubberless TO-AB BTA/BTB6-xxxC X X 5 ma Standard TO-AB BTA/BTB6-xxxCW X X 35 ma Snubberless TO-AB BTA/BTB6-xxxSW X X ma Logic level TO-AB BTA/BTB6-xxxTW X X 5 ma Logic Level TO-AB BTB: non insulated TO-AB package 5/7
6 Figure : TO-AB (insulated and non insulated) Package Mechanical Data I4 l3 l e B Ø I b a L A a b c M C c F DIMENSIONS REF. Millimeters Inches Min. Typ. Max. Min. Typ. Max. A a a B b b C c c e F ØI I L l l M.6. In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: Table 8: Ordering Information Ordering type Marking Package Weight Base qty Delivery mode BTA/BTB6-xxxyzRG BTA/BTB6-xxxyz TO-AB.3 g 5 Tube Note: xxx = voltage, yy = sensitivity, z = type Table 9: Revision History Date Revision Description of Changes Apr- 5A Last update. 3-Feb-6 6 TO-AB delivery mode changed from bulk to tube. ECOPACK statement added. 6/7
7 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners 6 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 7/7
BTA40, BTA41 and BTB41 Series
BTA4, BTA41 and BTB41 Series STANDARD 4A TRIACS Table 1: Main Features Symbol Value Unit I T(RMS) 4 A V DRM /V RRM 6 and 8 V I T (Q1 ) 5 ma DESCRIPTION Available in high power packages, the BTA/ BTB4-41
More informationBTA12, BTB12, T12xx. 12 A Snubberless, logic level and standard triacs. Features. Applications. Order code. Description
12 A Snubberless, logic level and standard triacs Features Medium current triac Low thermal resistance with clip bonding Low thermal resistance insulation ceramic for insulated BTA High commutation (4Q)
More informationBTB04-600SL STANDARD 4A TRIAC MAIN FEATURES
BTB-6SL STANDARD A TRIAC MAIN FEATURES A Symbol Value Unit I T(RMS) A V DRM /V RRM 6 V I GT(Q) ma G A A DESCRIPTION The BTB-6SL quadrants TRIAC is intended for general purpose applications where high surge
More informationBTW67 and BTW69 Series
BTW67 and BTW69 Series STNDRD 50 SCRs MIN FETURES: Symbol Value Unit I T(RMS) 50 V DRM /V RRM 600 to 1200 V G K I GT 80 m G K DESCRIPTION vailable in high power packages, the BTW67 / BTW69 Series is suitable
More informationAN2703 Application note
Application note list for SCRs, TRIACs, AC switches, and DIACS Introduction All datasheet parameters are rated as minimum or maximum values, corresponding to the product parameter distribution. In each
More informationBTW69-1200N. 50 A 1200 V non insulated SCR thyristor. Description. Features. Applications
50 1200 V non insulated SCR thyristor Datasheet - production data G K K G TOP3 non insulated Description vailable in non insulated TOP3 high power package, the BTW69-1200N is suitable for applications
More informationSTW34NB20 N-CHANNEL 200V - 0.062 Ω - 34A TO-247 PowerMESH MOSFET
N-CHANNEL 200V - 0.062 Ω - 34A TO-247 PowerMESH MOSFET Table 1. General Features Figure 1. Package Type V DSS R DS(on) I D STW34NB20 200 V < 0.075 Ω 34 A FEATURES SUMMARY TYPICAL R DS(on) = 0.062 Ω EXTREMELY
More informationACS108. Overvoltage protected AC switch (ACS ) Description. Features. Applications
Overvoltage protected AC switch (ACS ) Datasheet - production data OUT G TO-92-6SA -8SA COM COM OUT COMG -6SN -8SN Description The belongs to the AC switch range (built with A. S. D. technology). This
More informationSTP60NF06FP. N-channel 60V - 0.014Ω - 30A TO-220FP STripFET II Power MOSFET. General features. Description. Internal schematic diagram.
N-channel 60V - 0.014Ω - 30A TO-220FP STripFET II Power MOSFET General features Type V DSS R DS(on) I D STP60NF06FP 60V
More informationSTTH1R04-Y. Automotive ultrafast recovery diode. Features. Description
Automotive ultrafast recovery diode Features Datasheet - production data K SMA STTH1R4AY Table 1. Device summary Symbol Value I F(AV) 1 A V RRM 4 V T j (max) 175 C V F (typ) t rr (typ) A K.9 V 14 ns A
More informationDDSL01. Secondary protection for DSL lines. Features. Description
Secondary protection for DSL lines Features Stand off voltage: 30 V Surge capability: I pp = 30 A 8/20 µs Low capacitance device: 4.5 pf at 2 V RoHS package Low leakage current: 0.5 µa at 25 C 3 2 Description
More informationSTP62NS04Z N-CHANNEL CLAMPED 12.5mΩ - 62A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET
N-CHANNEL CLAMPED 12.5mΩ - 62A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET TYPE V DSS R DS(on) I D STP62NS04Z CLAMPED
More informationSTP60NF06. N-channel 60V - 0.014Ω - 60A TO-220 STripFET II Power MOSFET. General features. Description. Internal schematic diagram.
N-channel 60V - 0.014Ω - 60A TO-220 STripFET II Power MOSFET General features Type V DSS R DS(on) I D STP60NF06 60V
More informationSTB4NK60Z, STB4NK60Z-1, STD4NK60Z STD4NK60Z-1, STP4NK60Z,STP4NK60ZFP
STB4NK60Z, STB4NK60Z-1, STD4NK60Z STD4NK60Z-1, STP4NK60Z,STP4NK60ZFP N-channel 600 V - 1.76 Ω - 4 A SuperMESH Power MOSFET DPAK - D 2 PAK - IPAK - I 2 PAK - TO-220 - TO-220FP Features Type V DSS R DS(on)
More informationSTTH3R02QRL. Ultrafast recovery diode. Main product characteristics. Features and benefits. Description. Order codes DO-15 STTH3R02Q DO-201AD STTH3R02
Ultrafast recovery diode Main product characteristics I F(V) 3 V RRM 2 V T j (max) V F (typ) 175 C.7 V K t rr (typ) 16 ns Features and benefits Very low conduction losses Negligible switching losses K
More informationSTN3NF06L. N-channel 60 V, 0.07 Ω, 4 A, SOT-223 STripFET II Power MOSFET. Features. Application. Description
N-channel 60 V, 0.07 Ω, 4 A, SOT-223 STripFET II Power MOSFET Features Type V DSS (@Tjmax) Exceptional dv/dt capability Avalanche rugged technology 100% avalanche tested R DS(on) max STN3NF06L 60 V < 0.1
More informationETP01-xx21. Protection for Ethernet lines. Features. Description. Applications. Benefits. Complies with the following standards
ETP0-xx2 Protection for Ethernet lines Features Differential and common mode protection Telcordia GR089 Intrabuilding: 50 A, 2/0 µs ITU-T K20/2: 40 A, 5/30 µs Low capacitance: 3 pf max at 0 V UL94 V0 approved
More informationX02. 1.25 A sensitive gate SCR. Features. Applications. Description. on-state rms current: 1.25 A. repetitive peak off-state voltage: 600 V and 800 V
1.25 sensitive gate SCR Features on-state rms current: 1.25 repetitive peak off-state voltage: 600 V and 800 V G gate triggering current: 50 and 200 µ K pplications ground fault circuit interrupters overvoltage
More informationBZW50. Transil, transient voltage surge suppressor (TVS) Features. Description
Transil, transient voltage surge suppressor (TVS) Datasheet production data Features Peak pulse power: 5000 W (10/0 µs) Stand-off voltage range from 10 V to 180 V Unidirectional and bidirectional types
More informationBD241A BD241C. NPN power transistors. Features. Applications. Description. NPN transistors. Audio, general purpose switching and amplifier transistors
BD241A BD241C NPN power transistors Features. NPN transistors Applications Audio, general purpose switching and amplifier transistors Description The devices are manufactured in Planar technology with
More informationSTTH2R06. High efficiency ultrafast diode. Features. Description
STTH2R6 High efficiency ultrafast diode Features Very low conduction losses Negligible switching losses Low forward and reverse recovery times High junction temperature Description A K The STTH2R6 uses
More informationSTP55NF06L STB55NF06L - STB55NF06L-1
General features STP55NF06L STB55NF06L - STB55NF06L-1 N-channel 60V - 0.014Ω - 55A TO-220/D 2 PAK/I 2 PAK STripFET II Power MOSFET Type V DSS R DS(on) I D STP55NF06L 60V
More informationSTP80NF55-08 STB80NF55-08 STB80NF55-08-1 N-CHANNEL 55V - 0.0065 Ω - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET
STP80NF55-08 STB80NF55-08 STB80NF55-08-1 N-CHANNEL 55V - 0.0065 Ω - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET TYPE V DSS R DS(on) I D STB80NF55-08/-1 STP80NF55-08 55 V 55 V
More informationSTP10NK80ZFP STP10NK80Z - STW10NK80Z
STP10NK80ZFP STP10NK80Z - STW10NK80Z N-channel 800V - 0.78Ω - 9A - TO-220/FP-TO-247 Zener-protected supermesh TM MOSFET General features Type V DSS R DS(on) I D Pw STP10NK80Z 800V
More informationBD135 - BD136 BD139 - BD140
BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features Products are pre-selected in DC current gain Application General purpose Description These epitaxial planar transistors are mounted
More informationLM134-LM234-LM334. Three terminal adjustable current sources. Features. Description
Three terminal adjustable current sources Features Operates from 1V to 40V 0.02%/V current regulation Programmable from 1µA to 10mA ±3% initial accuracy Description The LM134/LM234/LM334 are 3-terminal
More informationPINNING - TO220AB PIN CONFIGURATION SYMBOL
BTA4 series GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated triacs in a plastic envelope, SYMBOL PARAMETER MAX. MAX. UNIT intended for use in applications requiring high bidirectional transient and
More informationSTB75NF75 STP75NF75 - STP75NF75FP
STB75NF75 STP75NF75 - STP75NF75FP N-channel 75V - 0.0095Ω - 80A - TO-220 - TO-220FP - D 2 PAK STripFET II Power MOSFET General features Type V DSS R DS(on) I D STB75NF75 75V
More informationSTW20NM50 N-CHANNEL 550V @ Tjmax - 0.20Ω - 20ATO-247 MDmesh MOSFET
N-CHANNEL 550V @ Tjmax - 0.20Ω - 20ATO-247 MDmesh MOSFET TYPE V DSS (@Tjmax) R DS(on) I D STW20NM50 550V < 0.25Ω 20 A TYPICAL R DS (on) = 0.20Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED
More informationSTGW40NC60V N-CHANNEL 50A - 600V - TO-247 Very Fast PowerMESH IGBT
N-CHANNEL 50A - 600V - TO-247 Very Fast PowerMESH IGBT Table 1: General Features STGW40NC60V 600 V < 2.5 V 50 A HIGH CURRENT CAPABILITY HIGH FREQUENCY OPERATION UP TO 50 KHz LOSSES INCLUDE DIODE RECOVERY
More informationHow To Write A Circuit Imprim\U00E9
Réalisation de circuits imprimés EXTRA1 1996 / 2002 Projet 3 - GRADATOR / Gradateur à TRIAC Projet : EXTRA1 Info : [DATA216] Révision : novembre 2000 Figure 3.1. Vue du circuit imprimé (images-composants\xx.jpg).
More informationLM135-LM235-LM335. Precision temperature sensors. Features. Description
Precision temperature sensors Features Directly calibrated in K 1 C initial accuracy Operates from 450µA to 5mA Less than 1Ω dynamic impedance TO-92 (Plastic package) Description The LM135, LM235, LM335
More informationDSL01-xxxSC5. Secondary protection for DSL lines. Features. Description. Applications. Benefits. Complies with the following standards
-xxxsc5 Secondary protection for DSL lines Features Low capacitance devices: -xxxsc5: Delta C typ = 3.5 pf High surge capability: 30 A - 8/20 µs Voltage: 8 V, 10.5 V, 16 V, and 24 V RoHS package Benefits
More informationP6KE. Transil, transient voltage surge suppressor (TVS) Features. Description. Complies with the following standards
Transil, transient voltage surge suppressor (TVS) Datasheet production data Features Peak pulse power: 600 W (10/0 µs ) Stand-off voltage range 6.8 to 440 V Unidirectional and bidirectional types Low clamping
More informationSTTH110. High voltage ultrafast rectifier. Description. Features
High voltage ultrafast rectifier Datasheet - production data K Description The STTH110, which is using ST ultrafast high voltage planar technology, is especially suited for free-wheeling, clamping, snubbering,
More informationESDLIN1524BJ. Transil, transient voltage surge suppressor diode for ESD protection. Features. Description SOD323
Transil, transient voltage surge suppressor diode for ESD protection Datasheet production data Features Max peak pulse power 160 W (8/0 µs) Asymmetrical bidirectional device Stand-off voltage: 15 and 4
More informationAN438 APPLICATION NOTE SAFETY PRECAUTIONS FOR DEVELOPMENT TOOL TRIAC + MICROCONTROLLER
AN438 APPLICATION NOTE SAFETY PRECAUTIONS FOR DEVELOPMENT TOOL TRIAC + MICROCONTROLLER INTRODUCTION The goal of this paper is to analyse the different ways to configure a micro-controller and a development
More informationTPI. Tripolar protection for ISDN interfaces. Features. Description. Complies with following standards. Benefits
Tripolar protection for ISDN interfaces Features Bidirectional triple crowbar protection Peak pulse current: I PP = 30, 10/1000 µs Breakdown voltage: TPI80N: 80 V TPI120N: 120 V vailable in SO-8 package
More informationFLC21-135A LOW POWER FIRE LIGHTER CIRCUIT. Application Specific Discretes A.S.D.
Application Specific iscretes A.S.. LC21-135A LOW POWER IRE LIGHTER CIRCUIT EATURES EICATE THYRISTOR STRUCTURE OR CAPACITIVE ISCHARGE IGNITION OPERATION HIGH PULSE CURRENT CAPABILITY I RM =90A @ tp=10µs
More informationL78MxxAB L78MxxAC. Precision 500 ma regulators. Features. Description
L78MxxAB L78MxxAC Precision 500 ma regulators Features Output current to 0.5 A Output voltages of 5; 6; 8; 9; 10; 12; 15; 18; 24 V Thermal overload protection Short circuit protection Output transition
More informationSTP10NK60Z/FP, STB10NK60Z/-1 STW10NK60Z N-CHANNEL 600V-0.65Ω-10A TO-220/FP/D 2 PAK/I 2 PAK/TO-247 Zener-Protected SuperMESH Power MOSFET
STP10NK60Z/FP, STB10NK60Z/-1 STW10NK60Z N-CHANNEL 600V-0.65Ω-10A TO-220/FP/D 2 PAK/I 2 PAK/TO-247 Zener-Protected SuperMESH Power MOSFET TYPE V DSS R DS(on) I D Pw STP10NK60Z STP10NK60ZFP STB10NK60Z STB10NK60Z-1
More informationBD238. Low voltage PNP power transistor. Features. Applications. Description. Low saturation voltage PNP transistor
Low voltage PNP power transistor Features Low saturation voltage PNP transistor Applications Audio, power linear and switching applications Description The device is manufactured in planar technology with
More informationULN2801A, ULN2802A, ULN2803A, ULN2804A
ULN2801A, ULN2802A, ULN2803A, ULN2804A Eight Darlington array Datasheet production data Features Eight Darlington transistors with common emitters Output current to 500 ma Output voltage to 50 V Integral
More informationIRF740 N-CHANNEL 400V - 0.46Ω - 10A TO-220 PowerMESH II MOSFET
N-CHANNEL 400V - 0.46Ω - 10A TO-220 PowerMESH II MOSFET TYPE V DSS R DS(on) I D IRF740 400 V < 0.55 Ω 10 A TYPICAL R DS (on) = 0.46Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE VERY
More informationSTP6NK60Z - STP6NK60ZFP STB6NK60Z - STB6NK60Z-1 N-CHANNEL 600V - 1Ω - 6A TO-220/TO-220FP/D 2 PAK/I 2 PAK Zener-Protected SuperMESH Power MOSFET
STP6NK60Z - STP6NK60ZFP STB6NK60Z - STB6NK60Z-1 N-CHANNEL 600V - 1Ω - 6A TO-220/TO-220FP/D 2 PAK/I 2 PAK Zener-Protected SuperMESH Power MOSFET TYPE V DSS R DS(on) I D Pw STP6NK60Z STP6NK60ZFP STB6NK60Z
More informationTIC225 SERIES SILICON TRIACS
Copyright 200, Power Innovations Limited, UK JULY 975 - REVISED MARCH 200 Sensitive Gate Triacs 8 A RMS, 70 A Peak Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max I GT of 5 ma (Quadrant ) MT
More informationHCF4056B BCD TO 7 SEGMENT DECODER /DRIVER WITH STROBED LATCH FUNCTION
BCD TO 7 SEGMENT DECODER /DRIVER WITH STROBED LATCH FUNCTION QUIESCENT CURRENT SPECIF. UP TO 20V OPERATION OF LIQUID CRYSTALS WITH CMOS CIRCUITS PROVIDES ULTRA LOW POWER DISPLAY. EQUIVALENT AC OUTPUT DRIVE
More informationSCR, 12 A, 15mA, 500 V, SOT78. Planar passivated SCR (Silicon Controlled Rectifier) in a SOT78 plastic package.
Rev. 5 2 March 29 Product data sheet 1. Product profile 1.1 General description Planar passivated SCR (Silicon Controlled Rectifier) in a SOT78 plastic package. 1.2 Features and benefits High reliability
More informationHCF4081B QUAD 2 INPUT AND GATE
QUAD 2 INPUT AND GATE MEDIUM SPEED OPERATION : t PD = 60ns (Typ.) at 10 QUIESCENT CURRENT SPECIFIED UP TO 20 5, 10 AND 15 PARAMETRIC RATINGS INPUT LEAKAGE CURRENT I I = 100nA (MAX) AT DD = 18 T A = 25
More informationSymbol Parameter Value Unit V DS Drain-source Voltage (V GS =0) 50 V V DGR Drain- gate Voltage (R GS =20kΩ) 50 V
BUZ71A N - CHANNEL 50V - 0.1Ω - 13A TO-220 STripFET POWER MOSFET TYPE V DSS R DS(on) I D BUZ71A 50 V < 0.12 Ω 13 A TYPICAL RDS(on) = 0.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT
More informationlogic level for RCD/ GFI applications
logic level for RCD/ GFI applications BT68 series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. MAX. UNIT thyristors in a plastic envelope, intended
More informationlogic level for RCD/ GFI/ LCCB applications
logic level for RCD/ GFI/ LCCB applications BT68W series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. MAX. UNIT thyristors in a plastic envelope
More informationTable 1. Absolute maximum ratings (T amb = 25 C) Symbol Parameter Value Unit. ISO 10605 - C = 330 pf, R = 330 Ω : Contact discharge Air discharge
Automotive dual-line Transil, transient voltage suppressor (TVS) for CAN bus Datasheet - production data Complies with the following standards ISO 10605 - C = 150 pf, R = 330 Ω : 30 kv (air discharge)
More informationPassivated, sensitive gate triacs in a SOT54 plastic package. General purpose switching and phase control
TO-92 Rev. 9 9 November 2 Product data sheet. Product profile. General description Passivated, sensitive gate triacs in a SOT54 plastic package.2 Features and benefits Designed to be interfaced directly
More informationMT..KB SERIES 55 A 90 A 110 A THREE PHASE CONTROLLED BRIDGE. Power Modules. Features. Description. Major Ratings and Characteristics
MT..KB SERIES THREE PHASE CONTROLLED BRIDGE Power Modules Features Package fully compatible with the industry standard INT-A-pak power modules series High thermal conductivity package, electrically insulated
More informationST13005. High voltage fast-switching NPN power transistor. Features. Applications. Description
High voltage fast-switching NPN power transistor Datasheet production data Features Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Applications
More informationLM337. Three-terminal adjustable negative voltage regulators. Features. Description
Three-terminal adjustable negative voltage regulators Datasheet - production data current limit, thermal overload protection and safe area protection. All overload protection circuitry remains fully functional
More information.OPERATING SUPPLY VOLTAGE UP TO 46 V
L298 DUAL FULL-BRIDGE DRIVER.OPERATING SUPPLY VOLTAGE UP TO 46 V TOTAL DC CURRENT UP TO 4 A. LOW SATURATION VOLTAGE OVERTEMPERATURE PROTECTION LOGICAL "0" INPUT VOLTAGE UP TO 1.5 V (HIGH NOISE IMMUNITY)
More informationL293B L293E PUSH-PULL FOUR CHANNEL DRIVERS. OUTPUT CURRENT 1A PER CHANNEL PEAK OUTPUT CURRENT 2A PER CHANNEL (non repetitive) INHIBIT FACILITY
L293B L293E PUSH-PULL FOUR CHANNEL DRIVERS OUTPUT CURRENT 1A PER CHANNEL PEAK OUTPUT CURRENT 2A PER CHANNEL (non repetitive) INHIBIT FACILITY. HIGH NOISE IMMUNITY SEPARATE LOGIC SUPPLY OVERTEMPERATURE
More informationHCF4070B QUAD EXCLUSIVE OR GATE
QUAD EXCLUSIE OR GATE MEDIUM-SPEED OPERATION t PHL = t PLH = 70ns (Typ.) at CL = 50 pf and DD = 10 QUIESCENT CURRENT SPECIFIED UP TO 20 5, 10 AND 15 PARAMETRIC RATINGS INPUT LEAKAGE CURRENT I I = 100nA
More informationHCF4010B HEX BUFFER/CONVERTER (NON INVERTING)
HEX BUFFER/CONVERTER (NON INVERTING) PROPAGATION DELAY TIME: t PD = 50ns (Typ.) at V DD = 10V C L = 50pF HIGH TO LOW LEVEL LOGIC CONVERSION MULTIPLEXER: 1 TO 6 OR 6 TO 1 HIGH "SINK" AND "SOURCE" CURRENT
More informationTDA2822 DUAL POWER AMPLIFIER SUPPLY VOLTAGE DOWN TO 3 V LOW CROSSOVER DISTORSION LOW QUIESCENT CURRENT BRIDGE OR STEREO CONFIGURATION
TDA2822 DUAL POER AMPLIFIER SUPPLY VOLTAGE DON TO 3 V. LO CROSSOVER DISTORSION LO QUIESCENT CURRENT BRIDGE OR STEREO CONFIGURATION DESCRIPTION The TDA2822 is a monolithic integrated circuit in 12+2+2 powerdip,
More information2STBN15D100. Low voltage NPN power Darlington transistor. Features. Application. Description
Low voltage NPN power Darlington transistor Features Good h FE linearity High f T frequency Monolithic Darlington configuration with integrated antiparallel collector-emitter diode TAB Application Linear
More informationHCF4001B QUAD 2-INPUT NOR GATE
QUAD 2-INPUT NOR GATE PROPAGATION DELAY TIME: t PD = 50ns (TYP.) at V DD = 10V C L = 50pF BUFFERED INPUTS AND OUTPUTS STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS QUIESCENT CURRENT SPECIFIED UP TO 20V
More informationIRF830. N - CHANNEL 500V - 1.35Ω - 4.5A - TO-220 PowerMESH MOSFET
IRF830 N - CHANNEL 500V - 1.35Ω - 4.5A - TO-220 PowerMESH MOSFET TYPE V DSS R DS(on) I D IRF830 500 V < 1.5 Ω 4.5 A TYPICAL R DS(on) = 1.35 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY
More informationIRFP450. N - CHANNEL 500V - 0.33Ω - 14A - TO-247 PowerMESH MOSFET
IRFP450 N - CHANNEL 500V - 0.33Ω - 14A - TO-247 PowerMESH MOSFET TYPE V DSS R DS(on) I D IRFP450 500 V < 0.4 Ω 14 A TYPICAL R DS(on) = 0.33 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY
More informationVN03. ISO high side smart power solid state relay PENTAWATT. Features. Description. www.tvsat.com.pl
ISO high side smart power solid state relay Features Type V DSS R DS(on) I n (1) Maximum continuous output current (a) : 4A @ Tc= 25 C 5V logic level compatible input Thermal shutdown Under voltage protection
More informationSTB60N55F3, STD60N55F3, STF60N55F3 STI60N55F3, STP60N55F3, STU60N55F3
STB60N55F3, STD60N55F3, STF60N55F3 STI60N55F3, STP60N55F3, STU60N55F3 N-channel 55 V, 6.5 mω, 80 A, DPAK, IPAK, D 2 PAK, I 2 PAK, TO-220 TO-220FP STripFET III Power MOSFET Features Type V DSS R DS(on)
More informationDISCRETE SEMICONDUCTORS DATA SHEET. BT151 series C Thyristors
DISCRETE SEMICONDUCTORS DATA SHEET Product specification April 24 Product specification GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated thyristors in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT
More informationL4940 series VERY LOW DROP 1.5 A REGULATORS
L4940 series VERY LOW DROP 1.5 A REGULATORS PRECISE 5 V, 8.5 V, 10 V, 12 V OUTPUTS LOW DROPOUT VOLTAGE (500 typ at 1.5A) VERY LOW QUIESCENT CURRENT THERMAL SHUTDOWN SHORT CIRCUIT PROTECTION REVERSE POLARITY
More informationTDA2003 10W CAR RADIO AUDIO AMPLIFIER
TDA2003 10W CAR RADIO AUDIO AMPLIFIER DESCRIPTION The TDA 2003 has improved performance with the same pin configuration as the TDA 2002. The additional features of TDA 2002, very low number of external
More informationLF00AB/C SERIES VERY LOW DROP VOLTAGE REGULATORS WITH INHIBIT
LF00AB/C SERIES ERY LOW DROP OLTAGE REGULATORS WITH INHIBIT ERY LOW DROPOUT OLTAGE (5) ERY LOW QUIESCENT CURRENT (TYP. 50 µa IN OFF MODE, 500µA INON MODE) OUTPUT CURRENT UP TO 500 ma LOGIC-CONTROLLED ELECTRONIC
More informationTDA2004R. 10 + 10 W stereo amplifier for car radio. Features. Description
10 + 10 W stereo amplifier for car radio Features Low distortion Low noise Protection against: Output AC short circuit to ground Overrating chip temperature Load dump voltage surge Fortuitous open ground
More informationL6234. Three phase motor driver. Features. Description
Three phase motor driver Features Supply voltage from 7 to 52 V 5 A peak current R DSon 0.3 Ω typ. value at 25 C Cross conduction protection TTL compatible driver Operating frequency up to 150 khz Thermal
More informationTDA4605 CONTROL CIRCUIT FOR SWITCH MODE POWER SUPPLIES USING MOS TRANSISTORS
CONTROL CIRCUIT FOR SWITCH MODE POWER SUPPLIES USING MOS TRANSISTORS Fold-Back Characteristic provides Overload Protection for External Diodes Burst Operation under Short-Circuit and no Load Conditions
More informationDescription. Table 1. Device summary
2 A positive voltage regulator IC Description Datasheet - production data Features TO-220 Output current up to 2 A Output voltages of 5; 7.5; 9; 10; 12; 15; 18; 24 V Thermal protection Short circuit protection
More informationDescription. Table 1. Device summary. Order codes. TO-220 (single gauge) TO-220 (double gauge) D²PAK (tape and reel) TO-220FP
1.2 V to 37 V adjustable voltage regulators Description Datasheet - production data TO-220 TO-220FP The LM217, LM317 are monolithic integrated circuits in TO-220, TO-220FP and D²PAK packages intended for
More informationEN: This Datasheet is presented by the m anufacturer. Please v isit our website for pricing and availability at www.hest ore.hu.
EN: This Datasheet is presented by the m anufacturer. Please v isit our website for pricing and availability at www.hest ore.hu. 2N3055, MJ2955 Complementary power transistors Features Datasheet - production
More informationDescription SO-8. series. Furthermore, in the 8-pin configuration Very low-dropout voltage (0.2 V typ.)
ery low-dropout voltage regulator with inhibit function TO-92 Bag TO-92 Tape and reel Ammopack 1 2 3 SO-8 Description Datasheet - production data The is a very low-dropout voltage regulator available in
More informationBYT60P-1000 BYT261PIV-1000
BY6P-1 BY261PIV-1 FAS RECOVERY RECIFIER DIODES MAJOR PRODUC CHARACERISICS K2 A2 I F(AV) V RRM VF (max) trr (max) FEAURES AND BENEFIS 2 x 6 A 1 V 1.8 V 7 ns K1 A1 BY261PIV-1 VERY LOW REVERSE RECOVERY IME
More informationSTCS1. 1.5 A max constant current LED driver. Features. Applications. Description
1.5 A max constant current LED driver Features Up to 40 V input voltage Less than 0.5 V voltage overhead Up to 1.5 A output current PWM dimming pin Shutdown pin LED disconnection diagnostic DFN8 (3x3 mm)
More informationSTPS5L60. Power Schottky rectifier. Description. Features
Power Schottky rectifier Datasheet - production data Description Power Schottky rectifier suited for switch mode power supplies and high frequency inverters. This device is intended for use in low voltage
More informationSTP16NF06L STP16NF06LFP
STP16NF06L STP16NF06LFP N-CHNNEL 60V - 0.07 Ω - 16 TO-220/TO-220FP STripFET II POWER MOSFET TYPE V DSS R DS(on) I D STP16NF06L STP60NF06LFP 60 V 60 V
More informationVN05N. High side smart power solid state relay PENTAWATT. Features. Description
High side smart power solid state relay Features Type V DSS R DS(on) I OUT V CC VN05N 60 V 0.18 Ω 13 A 26 V Output current (continuous): 13A @ Tc=25 C 5V logic level compatible input Thermal shutdown Under
More informationI T(AV) off-state voltages. PINNING - TO92 variant PIN CONFIGURATION SYMBOL. 3 anode g
BT9 series GENERL DESCRIPTION QUICK REFERENCE DT Passivated, sensitive gate thyristors in a SYMBOL PRMETER MX. MX. MX. UNIT plastic envelope, intended for use in general purpose switching and phase BT9
More informationSTGB10NB37LZ STGP10NB37LZ
STGB10NB37LZ STGP10NB37LZ 10 A - 410 V internally clamped IGBT Features Low threshold voltage Low on-voltage drop Low gate charge TAB TAB High current capability High voltage clamping feature Applications
More informationUA741. General-purpose single operational amplifier. Features. Applications. Description. N DIP8 (plastic package)
General-purpose single operational amplifier Datasheet - production data N DIP8 (plastic package) D SO8 (plastic micropackage) Pin connections (top view) 1 - Offset null 1 2 - Inverting input 3 - Non-inverting
More informationDescription. Table 1. Device summary. Order code Temperature range Package Packaging Marking
14-stage ripple carry binary counter/divider and oscillator Applications Automotive Industrial Computer Consumer Description Datasheet - production data Features Medium speed operation Common reset Fully
More informationSTTA506D/F/B TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS IF(AV) V RRM 600V. t rr (typ) 20ns. VF (max) 1.
STT506D/F/B TURBOSWITCH ULTR-FST HIGH OLTGE DIODE MIN PRODUCTS CHRCTERISTICS IF() RRM 5 600 K t rr (typ) 20ns F (max) 1.5 K K FETURES ND BENEFITS SPECIFICTO FREEWHEELMODE OPERTIONS: FREEWHEEL OR BOOSTER
More informationSTGB8NC60KD - STGD8NC60KD STGF8NC60KD - STGP8NC60KD
STGB8NC60KD - STGD8NC60KD STGF8NC60KD - STGP8NC60KD 600 V - 8 A - short circuit rugged IGBT Features Lower on voltage drop (V CE(sat) ) 2 Lower C RES / C IES ratio (no cross-conduction susceptibility)
More informationADJUSTABLE VOLTAGE AND CURRENT REGULATOR
L200 ADJUSTABLE VOLTAGE AND CURRENT REGULATOR ADJUSTABLE OUTPUT CURRENT UP TO 2 A (GUARANTEED UP TO Tj = 150 C) ADJUSTABLE OUTPUT VOLTAGE DOWN TO 2.85 V INPUT OVERVOLTAGE PROTECTION (UP TO 60 V, 10 ms)
More informationBUX48/48A BUV48A/V48AFI
BUX48/48A BU48A/48AFI HIGH POWER NPN SILICON TRANSISTORS STMicroelectronics PREFERRED SALESTYPES NPN TRANSISTOR HIGH OLTAGE CAPABILITY HIGH CURRENT CAPABILITY FAST SWITCHING SPEED APPLICATIONS SWITCH MODE
More informationDiode, Schottky SMB/DO-214AA. Page <1> 24/04/08 V1.1. Dimensions Inches (Millimeters)
Features: For surface mounted application. Metal to silicon rectifier, majority carrier conduction. Low forward voltage drop. Easy pick and place. High surge current capability. Plastic material. Epitaxial
More informationTDA7448 6 CHANNEL VOLUME CONTROLLER 1 FEATURES 2 DESCRIPTION. Figure 1. Package
6 CHANNEL CONTROLLER FEATURES 6 CHANNEL INPUTS 6 CHANNEL OUTPUTS ATTENUATION RANGE OF 0 TO -79dB CONTROL IN.0dB STEPS 6 CHANNEL INDEPENDENT CONTROL ALL FUNCTION ARE PROGRAMMABLE VIA SERIAL BUS DESCRIPTION
More informationMC33079. Low noise quad operational amplifier. Features. Description
Low noise quad operational amplifier Datasheet production data Features Low voltage noise: 4.5 nv/ Hz High gain bandwidth product: 15 MHz High slew rate: 7 V/µs Low distortion: 0.002% Large output voltage
More informationULN2001, ULN2002 ULN2003, ULN2004
ULN2001, ULN2002 ULN2003, ULN2004 Seven Darlington array Datasheet production data Features Seven Darlingtons per package Output current 500 ma per driver (600 ma peak) Output voltage 50 V Integrated suppression
More informationObsolete Product(s) - Obsolete Product(s)
Vertical deflection booster for 3 App TV/monitor applications with 0 V flyback generator Features Figure. Heptawatt package Power amplifier Flyback generator Stand-by control Output current up to 3.0 App
More informationOrder code Temperature range Package Packaging
ST485B ST485C Low power RS-485/RS-422 transceiver Features Low quiescent current: 300 µa Designed for RS-485 interface application - 7 V to 12 V common mode input voltage range Driver maintains high impedance
More informationLM833 LOW NOISE DUAL OPERATIONAL AMPLIFIER
LOW NOISE DUAL OPERATIONAL AMPLIFIER LOW VOLTAGE NOISE: 4.5nV/ Hz HIGH GAIN BANDWIDTH PRODUCT: 15MHz HIGH SLEW RATE: 7V/µs LOW DISTORTION:.2% EXCELLENT FREQUENCY STABILITY ESD PROTECTION 2kV DESCRIPTION
More informationDVIULC6-4SC6. Ultra low capacitance ESD protection. Main applications. Complies with these standards: Description. Benefits. Features.
Ultra low capacitance ESD protection Main applications DVI ports up to 1.65 Gb/s HDMI ports up to 1.65 Gb/s IEEE 1394a and IEEE 1394b ports up to 1.6 Gb/s USB2.0 ports up to 480 Mb/s (high speed), backwards
More information