W- Series. Features: WOB. Mechanical Data Case : Moulded plastic. Lead : Solder plated. Weight : 1.10 grams. Page <1> 15/07/08 V1.
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1 Features: Surge overload ratings to 40 amperes peak. Ideal for printed circuit board. Reliable low cost construction. High temperature soldering guaranteed: 260 C/10 seconds/0.375inch (9.5mm) lead lengths at 5lbs., (2.3kg) tension. WOB Mechanical Data Case : Moulded plastic. Lead : Solder plated. Weight : 1.10 grams. Dimensions : Inches (Millimetres) Page <1> 15/07/08 V1.1
2 Maximum Ratings at Electrical Characteristics Rating at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Type Number Symbol W005M W01M W02M W04M W06M W08M W10M Units Maximum Recurrent Peak Reverse Voltage V RRM Maximum RMS Voltage V RMS V Maximum DC Blocking Voltage V DC Maximum Average Forward Rectified Current at T A = 50 C Peak Forward Surge Current, 8.3ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage at 1.5A Maximum DC Reverse Current at T A = 25 C at Rated DC Blocking Voltage at T A = 125 C I (AV) 1.5 I FSM 400 V F 1.0 V I R A µa µα Typical Thermal Resistance (Note) R θja 36 R θjl 13 C/W Operating Temperature Range T J -55 to +125 Storage Temperature Range T STG -55 to +150 C Note: Thermal Resistance form Junction to Ambient and from Junction to Lead Mounted on PCB at inch (9.5mm) Lead Lengths with 0.4 x 0.4 inches (10mm x 10mm) Copper Pads. Page <2> 15/07/08 V1.1
3 Ratings and Characteristic Curves (W005M thru W10M) Maximum Forward Current Derating Curve Typical Reverse Characteristics Per Bridge Element Average Forward Current (A) Peak Forward Surge Current (A) Ambient Temperature ( C) Maximum Non-Repetitive Forward Surge Current Per Bridge Element Instantaneous Reverse Current (µa) Percent of Rated Peak Reverse Voltage (%) Typical Junction Capacitance Number of Cycles at 60Hz Instantaneous Forward Current (A) Typical Instantaneous Forward Characteristics Per Bridge Element Junction Capacitance (pf) Reverse Voltage (V) Instantaneous Forward Voltage (V) Page <3> 15/07/08 V1.1
4 Part Number Table Description Bridge Rectifier, 1.5A, 50V Bridge Rectifier, 1.5A, 100V Bridge Rectifier, 1.5A, 200V Bridge Rectifier, 1.5A, 400V Bridge Rectifier, 1.5A, 600V Bridge Rectifier, 1.5A, 800V Bridge Rectifier, 1.5A, 1000V Part Number W005M W01M W02M W04M W06M W08M W10M Page <4> 15/7/08 V1.1
5 Notes: International Sales Offices: AUSTRALIA Farnell Tel No: Fax No: FINLAND Farnell Tel No: Fax No: ITALY Farnell Tel No: Fax No: SPAIN Farnell Tel No: Fax No: AUSTRIA Farnell Tel No: Fax No: FRANCE Farnell Tel No: Fax No: MALAYSIA Tel No: Fax No: SWEDEN Farnell Tel No: Fax No: BELGIUM Farnell Tel No: Fax No: GERMANY Farnell Tel No: Fax No: NETHERLANDS Farnell Tel No: Fax No: SWITZERLAND Farnell Tel No: Fax No: BRAZIL Tel No: Fax No: HONG KONG Tel No: Fax No: NEW ZEALAND Farnell Tel No: Fax No: UK Farnell Tel No: Fax No: CHINA Tel No: Fax No: HUNGARY - Farnell NORWAY Farnell Tel No: Fax No: UK CPC CZECH REPUBLIC - Farnell INDIA - Farnell PORTUGAL Farnell Tel No: Fax No: USA Newark Tel No: DENMARK Farnell Tel No: Fax No: IRELAND Farnell Tel No: Fax No: RUSSIA Farnell export EXPORT Farnell Tel No: Fax No: For enquiries from all other markets ESTONIA Farnell Tel No: Fax No: ISRAEL Farnell Tel No: Fax No: SINGAPORE Tel No: Fax No: Disclaimer This data sheet and its contents (the "Information") belong to the Premier Farnell Group (the "Group") or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group's liability for death or personal injury resulting from its negligence. SPC Multicomp is the registered trademark of the Group. Premier Farnell plc Page <5> 15/07/08 V1.1
Diode, Schottky SMB/DO-214AA. Page <1> 24/04/08 V1.1. Dimensions Inches (Millimeters)
Features: For surface mounted application. Metal to silicon rectifier, majority carrier conduction. Low forward voltage drop. Easy pick and place. High surge current capability. Plastic material. Epitaxial
Features: Characteristic Symbol Rating Unit. Collector-Emitter Voltage V CEO 100 Collector-Base Voltage I C
Designed for use in general purpose power amplifier and switching applications. Features: Collector-Emitter Sustaining Voltage V CEO(sus) = 100V (Minimum) - TIP35C, TIP36C DC Current Gain h FE = 25 (Minimum)
TIP31, TIP32 High Power Bipolar Transistor
Features: Collector-Emitter sustaining voltage - V CEO(sus) = 60V (Minimum) - TIP31A, TIP32A = 100V (Minimum) - TIP31C,. Collector-Emitter saturation voltage - V CE(sat) = 1.2V (Maximum) at I C = 3.0A.
BUX48 High Power Bipolar Transistor
High oltage Switching Features: Collector-Emitter sustaining voltage- CEO(sus) = 400 (Minimum) - BUX48 = 450 (Minimum) -. Collector-Emitter saturation voltage- CE(sat) = 1.5 (Maximum) at I C = 10A for
BC107/ BC108/ BC109 Low Power Bipolar Transistors
TO-18 Features: NPN Silicon Planar Epitaxial Transistors. Suitable for applications requiring low noise and good h FE linearity, eg. audio pre-amplifiers, and instrumentation. TO-18 Metal Can Package Dimension
Features: High reliability. Very sharp reverse characteristic. Zener voltage 3.3V to 12V. V z -tolerance ±5%.
Features: High reliability. Very sharp reverse characteristic. Zener voltage 3.3V to 12V. V z -tolerance ±5%. Applications: Voltage stabilization. Absolute Maximum Ratings Parameter Test Conditions Symbol
Flat Flexible Cable 0.5mm, 1.0mm and 1.25mm Pitch
Flat Flexible Cables consist of flat tin plated copper conductors insulated between Polyester based tapes. Depending on the type of interconnection used, reinforcement tapes can be added to the cable ends
PDS5100H. Product Summary. Features and Benefits. Mechanical Data. Description and Applications. Ordering Information (Note 5) Marking Information
Green 5A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER POWERDI 5 Product Summary I F V R V F MAX (V) I R MAX (ma) (V) (A) @ +25 C @ +25 C 1 5..71.35 Description and Applications This Schottky Barrier Rectifier
BD135 - BD136 BD139 - BD140
BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features Products are pre-selected in DC current gain Application General purpose Description These epitaxial planar transistors are mounted
Surface Mount Schottky Barrier
FEATURES - Very low profile - typical height of 0.68mm - Low power loss, high efficiency - Ideal for automated placement - Moisture sensitivity level: level, per J-STD-020 - Compliant to RoHS Directive
BZW50. Transil, transient voltage surge suppressor (TVS) Features. Description
Transil, transient voltage surge suppressor (TVS) Datasheet production data Features Peak pulse power: 5000 W (10/0 µs) Stand-off voltage range from 10 V to 180 V Unidirectional and bidirectional types
BSN20. 1. Description. 2. Features. 3. Applications. 4. Pinning information. N-channel enhancement mode field-effect transistor
Rev. 3 26 June 2 Product specification. Description in a plastic package using TrenchMOS technology. Product availability: in SOT23. 2. Features TrenchMOS technology Very fast switching Logic level compatible
DDSL01. Secondary protection for DSL lines. Features. Description
Secondary protection for DSL lines Features Stand off voltage: 30 V Surge capability: I pp = 30 A 8/20 µs Low capacitance device: 4.5 pf at 2 V RoHS package Low leakage current: 0.5 µa at 25 C 3 2 Description
STTH1R04-Y. Automotive ultrafast recovery diode. Features. Description
Automotive ultrafast recovery diode Features Datasheet - production data K SMA STTH1R4AY Table 1. Device summary Symbol Value I F(AV) 1 A V RRM 4 V T j (max) 175 C V F (typ) t rr (typ) A K.9 V 14 ns A
STTH2R06. High efficiency ultrafast diode. Features. Description
STTH2R6 High efficiency ultrafast diode Features Very low conduction losses Negligible switching losses Low forward and reverse recovery times High junction temperature Description A K The STTH2R6 uses
Dual Common-Cathode Ultrafast Plastic Rectifier
(F,B)6AT thru (F,B)6JT Dual Common-Cathode Ultrafast Plastic Rectifier TO-0AB 6xT PIN PIN 3 PIN CASE 3 TO-63AB ITO-0AB F6xT PIN PIN 3 PIN 3 FEATURES Glass passivated chip junction Ultrafast recovery time
TDA2822 DUAL POWER AMPLIFIER SUPPLY VOLTAGE DOWN TO 3 V LOW CROSSOVER DISTORSION LOW QUIESCENT CURRENT BRIDGE OR STEREO CONFIGURATION
TDA2822 DUAL POER AMPLIFIER SUPPLY VOLTAGE DON TO 3 V. LO CROSSOVER DISTORSION LO QUIESCENT CURRENT BRIDGE OR STEREO CONFIGURATION DESCRIPTION The TDA2822 is a monolithic integrated circuit in 12+2+2 powerdip,
BD241A BD241C. NPN power transistors. Features. Applications. Description. NPN transistors. Audio, general purpose switching and amplifier transistors
BD241A BD241C NPN power transistors Features. NPN transistors Applications Audio, general purpose switching and amplifier transistors Description The devices are manufactured in Planar technology with
ULN2801A, ULN2802A, ULN2803A, ULN2804A
ULN2801A, ULN2802A, ULN2803A, ULN2804A Eight Darlington array Datasheet production data Features Eight Darlington transistors with common emitters Output current to 500 ma Output voltage to 50 V Integral
BTA40, BTA41 and BTB41 Series
BTA4, BTA41 and BTB41 Series STANDARD 4A TRIACS Table 1: Main Features Symbol Value Unit I T(RMS) 4 A V DRM /V RRM 6 and 8 V I T (Q1 ) 5 ma DESCRIPTION Available in high power packages, the BTA/ BTB4-41
STN3NF06L. N-channel 60 V, 0.07 Ω, 4 A, SOT-223 STripFET II Power MOSFET. Features. Application. Description
N-channel 60 V, 0.07 Ω, 4 A, SOT-223 STripFET II Power MOSFET Features Type V DSS (@Tjmax) Exceptional dv/dt capability Avalanche rugged technology 100% avalanche tested R DS(on) max STN3NF06L 60 V < 0.1
STP60NF06FP. N-channel 60V - 0.014Ω - 30A TO-220FP STripFET II Power MOSFET. General features. Description. Internal schematic diagram.
N-channel 60V - 0.014Ω - 30A TO-220FP STripFET II Power MOSFET General features Type V DSS R DS(on) I D STP60NF06FP 60V
STP60NF06. N-channel 60V - 0.014Ω - 60A TO-220 STripFET II Power MOSFET. General features. Description. Internal schematic diagram.
N-channel 60V - 0.014Ω - 60A TO-220 STripFET II Power MOSFET General features Type V DSS R DS(on) I D STP60NF06 60V
STW20NM50 N-CHANNEL 550V @ Tjmax - 0.20Ω - 20ATO-247 MDmesh MOSFET
N-CHANNEL 550V @ Tjmax - 0.20Ω - 20ATO-247 MDmesh MOSFET TYPE V DSS (@Tjmax) R DS(on) I D STW20NM50 550V < 0.25Ω 20 A TYPICAL R DS (on) = 0.20Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED
ULN2001, ULN2002 ULN2003, ULN2004
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ST13005. High voltage fast-switching NPN power transistor. Features. Applications. Description
High voltage fast-switching NPN power transistor Datasheet production data Features Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Applications
SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERE 20, 30 and 40 VOLTS
1N5817 and 1N5819 are Preferred Devices... employing the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry features chrome barrier metal, epitaxial construction
ETP01-xx21. Protection for Ethernet lines. Features. Description. Applications. Benefits. Complies with the following standards
ETP0-xx2 Protection for Ethernet lines Features Differential and common mode protection Telcordia GR089 Intrabuilding: 50 A, 2/0 µs ITU-T K20/2: 40 A, 5/30 µs Low capacitance: 3 pf max at 0 V UL94 V0 approved
L78MxxAB L78MxxAC. Precision 500 ma regulators. Features. Description
L78MxxAB L78MxxAC Precision 500 ma regulators Features Output current to 0.5 A Output voltages of 5; 6; 8; 9; 10; 12; 15; 18; 24 V Thermal overload protection Short circuit protection Output transition
MBR2045CT SCHOTTKY BARRIER RECTIFIER 20 AMPERES 45 VOLTS
Preferred Device... using the Schottky Barrier principle with a platinum barrier metal. These state of the art devices have the following features: Guardring for Stress Protection Low Forward Voltage 150
P6KE. Transil, transient voltage surge suppressor (TVS) Features. Description. Complies with the following standards
Transil, transient voltage surge suppressor (TVS) Datasheet production data Features Peak pulse power: 600 W (10/0 µs ) Stand-off voltage range 6.8 to 440 V Unidirectional and bidirectional types Low clamping
LM135-LM235-LM335. Precision temperature sensors. Features. Description
Precision temperature sensors Features Directly calibrated in K 1 C initial accuracy Operates from 450µA to 5mA Less than 1Ω dynamic impedance TO-92 (Plastic package) Description The LM135, LM235, LM335
Carbon Film Fixed Resistor Axial Leaded
Features Automatically insertable High quality performance Non-Flame type available Cost effective and commonly used Too low or too high values can be supplied on case to case basis Performance Specification
BD238. Low voltage PNP power transistor. Features. Applications. Description. Low saturation voltage PNP transistor
Low voltage PNP power transistor Features Low saturation voltage PNP transistor Applications Audio, power linear and switching applications Description The device is manufactured in planar technology with
LM134-LM234-LM334. Three terminal adjustable current sources. Features. Description
Three terminal adjustable current sources Features Operates from 1V to 40V 0.02%/V current regulation Programmable from 1µA to 10mA ±3% initial accuracy Description The LM134/LM234/LM334 are 3-terminal
1N5820, 1N5821, 1N5822. Axial Lead Rectifiers SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS
1N58, 1N5821, 1N5822 1N58 and 1N5822 are Preferred Devices Rectifiers This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features
STTH3R02QRL. Ultrafast recovery diode. Main product characteristics. Features and benefits. Description. Order codes DO-15 STTH3R02Q DO-201AD STTH3R02
Ultrafast recovery diode Main product characteristics I F(V) 3 V RRM 2 V T j (max) V F (typ) 175 C.7 V K t rr (typ) 16 ns Features and benefits Very low conduction losses Negligible switching losses K
Medium power Schottky barrier single diode
Rev. 03 17 October 2008 Product data sheet 1. Product profile 1.1 General description Planar medium power Schottky barrier single diode with an integrated guard ring for stress protection, encapsulated
High Performance Schottky Rectifier, 3.0 A
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High Power Thick Film Chip Resistor 2512
Specifications: Type : MCHP12 Power Rating at 70 C : 2W Working Voltage : 250V Max. Overload Voltage : 500V Max. Dielectric Withstanding Voltage : 500V Temperature Range : -55 C to +155 C Ambient Temperature
MCR08B, MCR08M. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 0.8 AMPERES RMS 200 thru 600 VOLTS
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ESDLIN1524BJ. Transil, transient voltage surge suppressor diode for ESD protection. Features. Description SOD323
Transil, transient voltage surge suppressor diode for ESD protection Datasheet production data Features Max peak pulse power 160 W (8/0 µs) Asymmetrical bidirectional device Stand-off voltage: 15 and 4
STTH110. High voltage ultrafast rectifier. Description. Features
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STP55NF06L STB55NF06L - STB55NF06L-1
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STGW40NC60V N-CHANNEL 50A - 600V - TO-247 Very Fast PowerMESH IGBT
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2STBN15D100. Low voltage NPN power Darlington transistor. Features. Application. Description
Low voltage NPN power Darlington transistor Features Good h FE linearity High f T frequency Monolithic Darlington configuration with integrated antiparallel collector-emitter diode TAB Application Linear
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Application: High temperature, flame retardant wire designed for use in the switch control, relay and instrumentation panels of power switchgear and for purposes such as internal connectors in rectifier
Foreign Taxes Paid and Foreign Source Income INTECH Global Income Managed Volatility Fund
Income INTECH Global Income Managed Volatility Fund Australia 0.0066 0.0375 Austria 0.0045 0.0014 Belgium 0.0461 0.0138 Bermuda 0.0000 0.0059 Canada 0.0919 0.0275 Cayman Islands 0.0000 0.0044 China 0.0000
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