AIMS EUV. Status of Concept and Feasibility Study. Ulrich Stroessner* Heiko Feldmann** Wolfgang Harnisch* Dirk Hellweg** Sascha Perlitz*

Transcription

1 AIMS EUV Status of Concept and Feasibility Study Ulrich Stroessner* Heiko Feldmann** Wolfgang Harnisch* Dirk Hellweg** Sascha Perlitz* *Carl Zeiss SMS GmbH, Jena,Germany **Carl Zeiss SMT GmbH, Oberkochen, Germany

2 Agenda Carl Zeiss SMS products for EUV mask technology AIMS EUV project status AIMS EUV technical status Summary

3 ZEISS Perfect Mask Enabling Technologies for Manufacturing Zero-defect Masks EUV mask registration EUV mask repair EUV Product roadmap EUV mask defect review development started

4 MeRiT HR 32 Repair Solutions for EUV Lastest Generation of e-beam based mask repair: MeRiT HR 32 ready for EUV New processes for EUV absorber depo and etch processes New gas chemistries better selectivity and stability for EUV repairs More gases high flexibilty regarding new EUV mask stack Q2 2010

5 Ebeam Based Mask Repair on Real Defects SEM image EUV Mask: Before repair Before repair After repair SEM image Wafer print: Before repair After repair No surface damage No change in edge placement No further degradation was observed Defect was repaired successfully PMJ

6 Agenda Carl Zeiss SMS products for EUV mask technology AIMS EUV project status AIMS EUV technical status Summary

7 AIMS Principle Scanner Illuminator 0.25x Mask NA 0.35 NA 1.4 Wafer equivalent image generation AIMS Illuminator Mask NA x CCD Camera AIMS : actinic mask review - same wavelength - same mask side NA - same illumination setting images the mask as the scanner will see it Capture real world mask effects!

8 AIMS EUV Project Sematech EMI (EUV mask infrastructure) consortium Need: Clear vote from all IDMs/mask manufactures for the need on an AIMS EUV Phase 1: AIMS concept & feasibility (C&F) study Structure: Objective: contract for C&F study between Sematech and Zeiss in place - define specification, timeline and project cost - decide on technical concept - finalize development contract for main project starting Jan 2011 Phase 2: Main development project Prerequisite: - development contract signed by Dec 2010 C&F study Main development project First tool delivery

9 Top Level Target Specs Topic Specs NA CRA (illumination angle) Illumination Aberrations CD repeatability (wafer level) NA extendible to adjustable Sigma and illumination shapes to match scanner optics comparable to EUV scanner < 0.3 nm

10 Agenda Carl Zeiss SMS products for EUV mask technology AIMS EUV project status AIMS EUV technical status Summary

11 EUV Metrology Core - Main Components Acoustic and thermal enclosure Reticle stage (reticle face down) Vacuum reticle handler Vacuum load lock Air reticle handler Vacuum chamber Source module Load port (single pod and pod in pod) Illumination optics Imaging optics Alignment optics CCD Camera Base frame Dampers Operator desk and software

12 Optical Design AIMS EUV All EUV optical design under development. Several designs under consideration. M4 M1 aspherical M2-M4 spherical CCD M2 M3 Mask M1 Tracklength = 1000mm

13 EUVL High Brightness Source Status Impact of source brightness on througput Throughput [a.u.] Throughput Target Spec Currently available brightness source brightness Current EUV sources deliver approximately 50% of required brightness. => Extension roadmap needed. => Trade off between throughput and CD repeatability

14 AIMS-EUV Handling AIMS EUV: Zero contamination requirement (molecular and particle) Dual Pod OuterPod- Opener ISO1-Room Vacuum-load-lock Reticle SMIF Pod Lift Transfer XCDA-Filter valve Inner Pod valve Vacuumchamber Four step transfer concept for particle and molecular contamination prevention Main Challenge: Infrastructure for ISO1 and contamination testing

15 New Requirement: EUV Scanner Ring Field Light cones at the edge of the mask EUV Mask Scanner Ring Field Illumination & projection light cones at the center of the mask

16 Emulation of EUV Scanner Ring Field by AIMS EUV Illumination angle variation leads to Lateral motion of illumination and projection pupil blades Larger optics

17 What does this matter for AIMS EUV? => On EUV masks the OPC needs to be position dependent But: the effort for precise mechanics to move the pupil blades in vacuum will increase tool price Can we ignore the optical effect? Simulation: CD error over mask position for 16 nm H and V lines CD change up to 0.55 nm = 3% CD difference chief ray azimuth angle left edge of the mask right edge of the mask Matters when comparing equal structures at different mask positions Is 0.55 nm acceptable?

18 What does this matter for AIMS EUV? Effect increases quadratically with increasing angle between illumination direction and structure orientation => H- and V-lines are least sensitive So what about 45 lines (relevant for brickwalls)? Simulation for 45 lines: Delta CD up to 6 % Delta MEEF up to 20% CD difference chief ray azimuth angle => This can not be accepted left edge of the mask => We have to and will do the effort The AIMS will emulate the varying illumination angle right edge of the mask

19 Summary Zeiss is about to close the mask infrastructure gaps with dedicated EUV solutions - PROVE (registration tool) capable and extendable for EUV masks - Merit HR32: EUV mask repair successfully demonstrated AIMS EUV concept and feasibility study running June-Dec study on track Zeiss is committed to AIMS EUV main project - start envisaged: Jan 2011 Acknowledgement: C&F study funded by Sematech

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