1.1 Silicon on Insulator a brief Introduction

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1 Table of Contents Preface Acknowledgements Chapter 1: Overview 1.1 Silicon on Insulator a brief Introduction 1.2 Circuits and SOI 1.3 Technology and SOI Chapter 2: SOI Materials 2.1 Silicon on Heteroepitaxial Substrate 2.2 Silicon-Oxide-Silicon SOI substrates Separation by Implantation of Oxygen Wafer-Bonding methods for preparing SOI SOI Materials Summary 2.3 Comparison of SOI and Bulk Isolation Techniques 2.4 SOI Technology Advantages Capacitance Reduction Reduced Short Channel Effect Lower Device Threshold Soft Error Rate (SER) Effects 2.5 Performance 2.6 Partially and Fully Depleted-SOI 2.7 Technology Scaling 2.8 SOI Device Properties Source/Drain-to-Substrate Capacitance Gate Leakage xix xxi Body Effects Bipolar Effect vii 23 23

2 2.9.2 Kink Effect Capacitive Body Effects 2.10 Body Ties Body Tied to Substrate Body-tied to gate Configurations Resistive Body Tie 2.11 Device Noise 2.12 Self Heating Self Heating from elsewhere on the same chip Self Heating from within a sub-circuit Chapter 3: Components 3.1 MOS devices 3.2 Diodes 3.3 Bipolar Transistors 3.4 Lateral DMOS 3.5 Drain Extended Devices Design of an SOI high voltage DEMOS device. 3.6 Compound High Voltage SOI Structures 3.7 Passive Components Resistors Capacitors Inductors Chapter 4: SOI Modeling 4.1 Modeling Introduction 4.2 Example SOI spice deck 4.3 Models BSIM viii

3 4.4 Alternative Model Options Chapter 5: Layout for SOI 5.1 Introduction to Layout for SOI components 5.2 Converting designs from Bulk to SOI Diodes Bipolar Transistors 5.3 Layout for Minimization of Thermal Self Heating Effects Cross coupling with thermal coupling 5.4 Output Stages Chapter 6: Static SOI Design 6.1 Introduction Lower Fan Out Capacitance 6.2 Decreased Body Effect 6.3 Gate Leakage 6.4 Static Inverter Characteristics 6.5 Body Voltages in SOI Inverters 6.6 Body Voltage Convergence Delay vs. effective gate length 6.7 Noise Margin In Inverters 6.8 Nand Gate Response Body Voltage Response in Nand Gates 6.9 Nor Gate response 6.10 Static OR-AND SOICMOS Circuit 6.11 XOR Gate response in SOI ix

4 6.12 Ring Oscillator Performance Nand Fan-out of 3 ring-performance vs Nand fanout of three - Performance vs supply Nand fan-out of one 6.13 Pass Gate Response Pass transistor based circuits Pass transistors based Multiplexers 6.14 History Dependence 6.15 SOI vs BULK : Performance benefits in Digital Circuits 6.16 Floating body and hysteresis effect 6.17 Non Ideal diode characteristics Chapter 7: Dynamic SOI Design 7.1 Introduction 7.2 Dynamic Circuit Response Dynamic History Effect Dynamic Charge Sharing Capacitive Coupling Effects Keeper Devices or Bleeders 7.3 Dynamic Circuit Design Considerations 7.4 Re-ordering and Remapping 7.5 Logical Remapping 7.6 Complex Domino Three-input Domino OR Gate Dynamic AND-OR Domino Gate 7.7 No-Race Logic (NORA) 7.8 Dynamic Noise Suppression 7.9 Design Issues in Dynamic 2-way NAND Logic x

5 7.10 Dynamic 2-Way OR Circuit 7.11 Dynamic Cascade Switch Logic 7.12 Clocked CMOS 7.13 Pulse Stretching in Dynamic Circuits 7.14 Dynamic Wide-OR 7.15 Non Overlapping Clocks 7.16 Pass transistor based Non-Overlapping Clocks 7.17 Low Power SOI Techniques Dynamic Threshold SOI CMOS Dynamic Threshold Multithreshold CMOS Logic Dynamic Threshold Pass Transistor Logic Dynamic threshold voltage Full Adder Dynamically Body Bias SOI CMOS Inverter Chapter 8: SOI SRAMs 8.1 Introduction 8.2 SRAM Cell structures 8.3 Design considerations and specifications for SRAM Cells T-2R Polysilicon resistor load SRAM SRAM cell with 2 thin-film transistor loads T-PMOS Load SRAM cells 8.4 Four Transistor SRAM using Self-body biased MOSFET 8.5 Basic SOI SRAM Cell operation READ Operation in a SRAM Cell Write operation in SRAM Cell 8.6 Cell Stability 8.7 SRAM Junction & Bit line capacitance xi

6 8.8 Decoders 8.9 SRAM Architecture 8.10 Bit Line Related Architecture 8.11 Sense Amplifiers Differential Amplifier Clocked Dual Slope Sense Amplifiers Dynamic Body Charge Controlled Sense Amplifier SenseAmplifier Techniques 8.12 Mismatches in Sense Amplifiers Offset Considerations for High Speed Sensing 8.13 Mismatch in SRAM Cells Body Bias Supply Rail Droop Body-to-Body Coupling Common Mode Supply Rail MOS Junction capacitance Self Heating 8.14 SER Issues in SRAMs 8.15 SOI CMOS Memory Challenges 8.16 Destructive read-out characteristics of SRAM Chapter 9: SOI DRAMs 9.1 Introduction 9.2 DRAM structure and Operation 9.3 Memory Array 9.4 DRAM cell storage Storage to Bit Line Capacitance SOI DRAM Process Smart-cut for DRAM xii

7 9.5.2 Quasi- SOI technology 9.6 Influence Of SER on SOI DRAMs 9.7 Cosmic Ray induced Soft Errors in SOI DRAMs 9.8 DRAM Refresh and Data Retention Static Data Retention Dynamic Data Retention Parasitic Leakage in DRAMs 9.9 High Density DRAMs with Body Contacts 9.10 Operating Voltage Reduction Half-Vdd Data Line Pre-charge Signal To Noise Ratio 9.11 Sense Amplifier Operation Sensing with Dummy Cell Structure Sensing with Body Contacts Body-Pulse Sense Amplifier (BPS) 9.12 Word Line Boosting Boosted Word Line with body contacts Boot-strapped Word line Driver 9.13 Charge pumps and generators 9.14 Embedded DRAMS in SOI 9.15 DRAM operation problems 9.16 SOI DRAM READ Critical Path Body Contacts 9.17 Synchronous Interface on DRAMs 9.18 High Speed Modes for Synchronous DRAMs 9.19 Prefetch Architecture 9.20 Other Architectures xiii

8 9.21 Destructive read out characteristics of DRAM 281 Chapter 10: SOI Analog Design 10.1 Introduction Benefits of SOI for Analog Design Drawbacks of Analog Design on SOI 10.2 Body Voltage Regulation Dynamic Body 10.3 Circuit Thermal Coupling Effects DC Thermal Coupling in Current Mirrors Transient Thermal Coupling in Current Mirrors 10.4 Band-gap Designs helper circuitry Threshold Voltage Difference Voltage Reference 10.5 Charge Pump Circuitry 10.6 Amplifiers Sense Amplifier Operational Amplifiers Operational Transconductance Amplifier Design 10.7 Matching 10.8 Output Stages / Buffers 10.9 High Voltage and Power Applications Sample and Hold Circuitry Circuits for RF/Wireless Applications Radio Frequency Low Noise Amplifier (LNA) Mixers and Analog Multipliers Delay Locked Loop Phase Locked Loop Phase Detector Loop Filter Oscillators xiv

9 10.12 Microwave Applications Voltage Regulation Series Regulator LDO Regulator Analog to Digital Converters (ADC) Successive Approximation ADC Flash Converters Pipelined ADCs Digital-to-Analog Converters (DAC) Sigma Delta Modulator Interface between Digital and Analog Circuitry Power Amplifiers Sensors and Actuators Chapter 11: Global Design Issues 11.1 Introduction to Global Design Issues Cell Libraries Clock Distribution Decoupling Capacitance and Series Resistance High Temperature Operation Gate Leakage 11.2 Noise Immunity Circuit Noise Capacitive Coupling Noise Delay Noise Logic Noise Decoupling Capacitors 11.3 Latchup Immunity 11.4 Self Heating 11.5 Electrostatic Discharge (ESD) xv

10 ESD Protection in Output Structures 11.6 Radiation Hard (Rad-Hard) Circuits 11.7 Reliability IDDQ (Quiescent Delay Fault Testing 11.8 Package and Bond wire Chapter 12: Low Power Design 12.1 Introduction 12.2 Clocking Clock Generation Clock Distribution Clock Gating 12.3 Options for Low Power Static vs. Dynamic Logic Gate Sizing Minimizing Switching Interconnect Low Voltage Swing 12.4 Analog Low Voltage Operation 12.5 Floating Voltage Schemes Low Voltage Output Operation 12.6 System Performance 12.7 System Power Management Low Power Standby Modes Supply Voltage during Standby Trade-Off for Power 12.8 Instruction Set Architecture Instruction Complexity: RISC or CISC 12.9 Reduction of Voltage below 3.3V xvi

11 Chapter 13: SOI in Development SOI Design: Analog, Memory & Digital Techniques 13.1 SOI Technology Roadmap 13.2 Device Enhancements Enhanced-gate SOI MOSFET FinFET 13.3 Quantum Devices 13.4 Stacked SOI 13.5 Reduced Temperature Operation 13.6 High Temperature Operation 13.7 New Circuit Designs for SOI Merged Bipolar / MOS Body Driven Operational Amplifier Body-input D-Flip-Flop SOI Transistor as a DRAM Appendix 1: Internet Sites (issue 1.0) Appendix 2: Trade Mark / Technology Information (issue 1.0) Index About the Authors 393 xvii

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