ASML EUV Program Jos Benschop Vice President System Engineering & Research / Slide 1 <file name> <version 00> <author>
Agenda ASML EUV tool roadmap Progress in key risk areas Source Optics Mask handling Status tool European EUV programs Summary & conclusion / Slide 2
EUV is currently the only credible solution for 32 nm and below half pitch Pitch/2 (nm) k 1 (nm) NA 32 0.30 193 1.81 32 0.30 157 1.47 32 0.59 13.5 0.25 Pitch 2 = k 1 NA / Slide 3
EUV tool specification roadmap Process evaluation tool Early production Volume production 1st Shipment 2005 2007 2009 NA Range 0.15 to 0.25 0.15 to 0.25 0.15 to 0.25 Imaging - Dense Lines 50 nm -> 40 nm 35 nm 32 nm - Isolated Lines 40 nm ->30 nm 25 nm 18 nm - iso/dense contacts 65 nm -> 55 nm 45nm 40nm Overlay 12 nm 8 nm 6 nm Throughput < 10 WPH 30 WPH 80 WPH Notes: CDU = 10 % Resolution Throughput is at 300 mm, 16 x 32 mm 2, 125 shots, 5 mj/cm 2 / Slide 4
Agenda ASML EUV tool roadmap Progress in key risk areas Source Optics Mask handling Status tool European EUV programs Summary & conclusion / Slide 5
Commercial EUVL source requirements* Attribute 2009 Commercial Tool Central wavelength (nm) 13.5 Clean EUV power in 2% BW (W) 1 115 delivered to intermediate focus Source-induced condenser >30,000 hrs lifetime at full power and 6 khz Integrated energy stability 0.3% 3, 50 pulses at 6 khz and nom. scan speed * Based on consensus of ASML, Canon, and Nikon - modified Feb 2003 / Slide 6
Source suppliers power roadmap Power at IF (W) 125 100 75 50 25 Philips(Xe) Philips(Sn) Cymer Xtreme Pilot tools Joint A/N/C spec Process tool 0 2002 2003 2004 2005 2006 2007 2008 Year Conclusion: Today s EUV source options are adequate for process evaluation tool and there is an improvement roadmap pilot tools. The path for production tools needs significant research and development. / Slide 7
Sn Source: 5-kHz operation, good conversion and collection efficiency demonstrated intensity (normalised) 1.0 Line scan 0.8 0.6 0.4 0.2 0.0-3 -2-1 0 1 2 3 4 5 6 5-kHz operation position z (mm) Small pinch allows effective capturing of EUV Corresponds to 20 W in 2nd focus @ 3 sr collector Philips Extreme UV / Slide 8
Mitigation of Sn debris Good progress by: Reduced emission Combined mitigation systems With debris mitigation: no noticeable deposition Without mitigation: 80 nm Philips Extreme UV / Slide 9
Agenda ASML EUV tool roadmap Progress in key risk areas Source Optics Mask handling Status tool European EUV programs Summary & conclusion / Slide 10
Status of ASML-optics mirror production for 10x NA=0.08 EUV Schwarzschild optics figure (nm) MSFR (nm) HSFR (nm) CA-1mm 1mm-1µm 1µm-0.1nm M1 0.27 0.15 0.21 M2 0.35 0.14 0.14 M1 M2 / Slide 11
Fabrication of aspheres: the Micro Exposure Tool (MET) Mask Secondary (M2) Condenser (C2 & C3) Primary (M1) Wafer 100 mm 220 mm MET Collaboration with Lawrence Livermore National Lab partially funded by ISMT 13.4 nm NA 0.3 Resolution 30 nm Field 0.2 x 0.6 mm² Magnification 5x / Slide 12
Status of Zeiss mirror production for Micro Exposure Tool 0.25 0.20 M1 M2 figure (nm) MSFR (nm) HSFR (nm) Date CA-1mm 1mm-1µm 1µm-10nm Q4 '01 0.41 0.23 0.49 Q3 '02 0.20 0.27 0.37 in process data 0.22 0.27 0.32 Q4 '01 0.25 0.34 0.38 Q3 '02 0.21 0.28 0.31 in process data 0.20 0.20 0.20 Flare (%) 0.15 0.10 0.05 E. Gullikson (LBNL) 0.00 0.1 1 10 Line Width (m) / Slide 13
Coating technology 80 Reflectivity ~ 70 % Ion-beam assisted electron beam evaporation Collaboration with FOM Rijnhuizen Reflectivity (%) 70 60 50 40 30 20 10 0 12 12.5 13 13.5 14 Wavelength (nm) / Slide 14
Optics for process evaluation tool: Interferometers operational and fabrication of all mirrors started Reticle Illuminator Collector unit Wafer 6M Projection lens 70 pm precision / Slide 15
Lifetime: contamination and reflection loss Carbon growth: 1% loss per nm carbon C x H y + EUV H H H O mirror Si H C H C H O Si Reversible Irreversible Oxidation: 3% loss per nm additional oxide H 2 O + EUV H diffusion H O O Si mirror O Si Contamination control strategy Improve oxidation resistance Improve vacuum Fast carbon cleaning, but soft to mirror Reduce C-growth / Slide 16
Contamination control: current status 230-hr exposure at PTB/BESSY Gasses: C x H y, H 2 O, O 2 Intensity: 30 mw/mm² Blue: estimated position of EUV spot 66.3% 65.7% R -3.0 Reflectometry RK090403 B1 SI0682 i.xls 0.0-0.5-1.0-1.5-2.0-2.5-3.0 Y -3.5-4.0-4.5-5.0-5.5-6.0 2.0-6.5-2.0-1.0 0.0 1.0 66.4 % 66.2 % 66.0 % 65.8 % 65.6 % 65.4 % 65.2 % 65.0 % X Surface analysis shows no oxidation or other damaging effect! / Slide 17
Agenda ASML EUV tool roadmap Progress in key risk areas Source Optics Mask handling Status tool European EUV programs Summary & conclusion / Slide 18
Mask handling Issue: Direct contact with the mask (reticle) creates particles and pellicles cannot be used, since virtually all materials absorb EUV Two-part solution: 1. Minimize the number of direct contact events by using reticle handling frame 2. Find low-particle generating material combinations and the conditions under which they can be used Robot arm with RH frame Material contact test setup / Slide 19
Mitigate particle generation: minimize contact events Method: contact events directly with the reticle limited to load/unload from electrostatic chuck on the exposure stage; all other contact events in the reticle handler are with a reticle handling frame MAX PRINTABLE FIELD (4X) 104 x 132 (26 x 33 AT WAFER) SEMI Draft 3419 Chucking & Layout Standard: proposed handling areas (green areas) / Slide 20
Influence of material Conditions: 10N, 100 contacts, ULE / Cr sample, air Before After After A B Found two materials that have produced few particles and no damage Found gripper materials compatible with bare and Cr-plated ULE / Slide 21
Influence of venting conditions 50 40 30 20 10 0 8-7-2003 0:00 13-7-2003 0:00 18-7-2003 0:00 23-7-2003 0:00 28-7-2003 0:00 2-8-2003 0:00 Date 60 50 40 30 20 10 0 / Slide 22 Number of particles > 100 nm 5-8-2003 0:00 5-8-2003 12:00 6-8-2003 0:00 6-8-2003 12:00 7-8-2003 0:00 7-8-2003 12:00 8-8-2003 0:00 8-8-2003 12:00 9-8-2003 0:00 Number of particles > 100 nm Date 125 nm particle Early experiments: Continuous build-up of particulate contamination when cycling mask between vacuum and atmospheric pressure Improved venting: Repeated cycling adding single particle > 100 nm when cycling mask between vacuum and atmospheric pressure
Agenda ASML EUV tool roadmap Progress in key risk areas Source Optics Mask handling Status tool European EUV programs Summary & conclusion / Slide 23
Status process evaluation tool: major modules ready for integration / Slide 24
Agenda ASML EUV tool roadmap Progress in key risk areas Source Optics Mask handling Status tool European EUV programs Summary & conclusion / Slide 25
European EUV programs 2000 P CEA /DAM, R E U V E 2001 2002 2003 2004 2005 2006 ~100 person-years CEA/DRECAM, CEA/LETI, GREMI- Université d Orléans, REOSC-Groupe SAGEM, SESO, SOPRA, Université d Aix- Marseille/L2MP/LORX National E X T U K ~1700 person-years E X T A T I C E U VS STM, Infineon, Philips, Motorola, ASML, Zeiss, SAGEM, Xenocs, IMEC, E LETl, CNRS, INFM, ASML, Clariant, Zeiss, Eldim, Sagem, Alcatel, O Incam, X Leica, SAGEM, Schott, M UR SESO, Sigma- C, Sopra, Unaxis, Xenocs, IMS-chips, C Lorxn, AS XTREME Philips, FhG, Gremi, Thales, IOE, Jenoptik, Aixuv, FOM, IT Innolite C E MEDEA+ E European Comm. ~300 person-years MORE MOORE ASML, Zeiss, SAGEM, Xenocs, TNO- TPD, AMTC, Philips Extreme UV, Xtreme Technologies, FOM, ENEA, Phystex, EPPRA, ISAN, Imagine Optic, FhG - ISB, CNRS, Sigma- C, CEA-LETI, Uni. Bielefeld, Uni. Mainz, Focus, Uni.Delft, CLARIANT, CNRS, IMEC, IMEL, Elettra / Slide 26
European EUV programs address critical issues for tool, mask, and infrastructure Critical issues 1) Source power and lifetime including condenser optics lifetime Availability of defect free masks Reticle protection during storage, handling, and use Projection and illuminator optics lifetime Resist resolution, sensitivity, and LWR Optics quality for 32-nm node MEDEA+ investigates Xenon LPP and Discharge, Masks for 50-nm node; no PSM Development / standardisation of reticle holder Secure process tool lifetime requiremens Resist selection study Roughly 50-nm node specs More Moore investigates Tin, maybe other materials, solutions for 120 W Masks for 22-nm node: PSM Particle research in machine Secure production lifetime requirements Fundamental research on resist properties Flare reduction, active optics, illumination system 1) Critical issues as identified in EUV workshop Antwerp 2003 / Slide 27
Agenda ASML EUV tool roadmap Progress in key risk areas Source Optics Mask handling Status tool European EUV programs Summary & conclusion / Slide 28
Conclusions (1) Steady progress on tool critical issues Source (power, lifetime) Confident that process evaluation tool technology will be secured Several source suppliers have roadmaps leading to high throughput compatible powers and lifetime Optics (fabrication, lifetime) Confident that process evaluation tool technology & lifetime will be secured Production tool polishing specifications are being approached, lifetime solutions identified Defect-free mask fabrication and handling Good progress on material selection and handling schemes/design. / Slide 29
Conclusions (2) Mask and resist addressed within European EUV programs Process evaluation Tool system realization: well under way Process evaluation Tool is stepping stone toward pilot and volume tools for 32-nm node / Slide 30
Acknowledgement Thanks to a huge team effort at ASML Zeiss TNO TPD Philips PTB-BESSY FOM-Rijnhuizen and many others with support from national governments, MEDEA+ and European Commission / Slide 31