Lithography Part I September, 5 th 2013

Transcription

1 7. Auswärtsseminar der Arbeitsgruppe Optische Technologien Leupold-Institut für Angewandte Naturwissenschaften (LIAN) der Westsächsischen Hochschule Zwickau Lithography Part I September, 5 th 2013 Heiko Aßmann (IFD OP FE PD LIT UP PR)

2 Table of contents Overview Infineon and IFD Short brief in semiconductor manufacturing Microlithography (at IFD) Examples for challenges Page 2

3 Table of contents Overview Infineon and Infineon Dresden Sites Products & customers Production & technology Short brief in semiconductor manufacturing Microlithography (at IFD) Examples for challenges Page 3

4 Innovative products: We offer customeroriented solutions in four business areas Automotive Engine and drive controls (hybrid, emobility) Safety management, for instance airbag control unit Error-tolerant data transmission within the vehicle Decentralized electronic control of whole units Integrated sensors for reaction control Passenger and operating comfort, infotainment Chip Card & Security Identification: electronic passports and identity cards, health cards Entertainment: Pay TV, games, video, audio Payment systems: credit/debit cards, epurse, electronic tickets Communication: SIM cards, prepaid cards Power Management & Multimarket Small, low-consumption, high-performance audio amplifiers Driver units for the latest lighting components (LED) Ambient light sensors Authentication with parts management Wireless bi-directional data transmission Power control and battery management with portable devices Industrial Power Control Leading edge power products: Components for electrical motors Components for switching high currents Components for renewable energy: solar and wind power plants Power controlled electronics (electric motors, household appliances) Page 4

5 Infineon Worldwide Production Sites Frontend and Backend Morgan Hill Dresden Kulim Wuxi Warstein Singapore Regensburg Villach Cegléd Malacca Batam Infineon Dresden is a key production site of Infineon. Frontend Backend Page 5

6 Overview IFD 300 mm fab 200 mm fab Page 6

7 Infineon Dresden First 300 mm fab worldwide for high volume production of power semiconductors Since 9 years Infineon has been market leader for power semiconductors July 2011: Decision to set up a high volume production for power semiconductors on 300 mm wafers in Dresden High-automation 200 mm fab with most modern copper tools Since 2009: Investment of more than 200 million EUR in modern copper technology tools High level of automation: currently ~60% automated lot handling; mid term goal ~80% Spring 2013: Successful customer qualification Ready to ramp according to market demand Page 7

8 Table of contents Overview Infineon and Infineon Dresden Short brief in semiconductor manufacturing Microlithography (at IFD) Examples for challenges Page 8

9 Gesamtprozess Chipherstellung Short brief in semiconductor manufacturing Mask Layout data E-Beam writing Si - Wafer Poly crystal Silicon Single crystal Silicon Wafer dicing, grinding Wafer surface treatment reticle Si - Wafer, ( maybe with EPI layer) Front-End Oxydation Deposition (CVD/PVD) Photolithography Wet etch, wet clean Plasma etch Implantation Diffusion Chemical - mechanical polishing (CMP) Measurements, inspections Wafer test Wafer Back-End Back side grinding Dicing Chip bonding Wire bonding Housing Burn in End test Page 9

10 Short brief in semiconductor manufacturing Bare wafer Oxidation, deposition Si Photolithography SiO 2 Si SiO 2 Si Resist strip Cycle repeat up to 50 x Fotoresist SiO 2 Si Fotoresist SiO 2 Si Resist coating Exposure Si Etch SiO 2 Si Development Ionenimplantation Si Page 10

11 Table of contents Overview Infineon and Infineon Dresden Short brief in Semiconductor Manufacturing Microlithography (at IFD) Examples for challenges Company Presentation 2013 Page 11

12 Microlithography Steps in lithography Adhesion promotion Post exposure bake Resist coating (spin on) Development Softbake Hardbake Alignment and exposure Measurement and inspection Add. UV harden Feedback for dose and OVL control Page 12

13 Microlithography Resist thicknesses Approx. 100 nm BARC (bottom anti reflective coating) From approx. 200 nm (DUV) to 12 µm (i-line) Wafer egde exclusion Solvent rinse Exposure Page 13

14 Microlithography Spin coating process: impacts of friction force, centrifugal force and wetting 1/ For example at 200mm wafer for mean resist thickness 400 nm Variation < 1 nm Quelle: T. Zell, Sommerschule 2007 Page 14

15 Microlithography mask exposure photoresist wafer positive tone latente image negative tone development resist structure Page 15

16 Microlithography Quelle: T. Zell, Sommerschule 2007 Page 16

17 Microlithography Exposure light sources Hg high pressure lamp λ=365nm Resolution down to 300nm Excimer Laser KrNeF λ=248nm Resolution down to 130nm Excimer Laser ArNeF λ=193nm Resolution down to 65nm Page 17

18 Microlithography Exposure Quelle: T. Zell, Sommerschule 2007 Page 18

19 Microlithography Exposure Quelle: T. Zell, Sommerschule 2007 Page 19

20 Microlithography Exposure Quelle: T. Zell, Sommerschule 2007 Page 20

21 Microlithography Overlay = not correctable residuals (printed aberations) + misalignment 8 parameters: Translation x and y Grid magnification x and y Grid rotation x and y Field magnification Field rotation Page 21

22 Microlithography Additional UV harden almost for i-line resists For secondary cross linking To avoid this for example Quelle: Fusion/Axelis, User s guide for UV Bake, T. Zell, Sommerschule 2007 Page 22

23 Microlithography at IFD Chemistry 365nm resists, IMIDEs 248nm resists, ARCs 193nm resists, ARCs0 Developer (TMAH), solvents, HMDS Costs for one year approx Page 23

24 Microlithography at IFD Exposure tools Wavelength: Typ NA Throughput 365nm Stepper i4 0,6 44W/h i5 0,63 56W/h i5+ 0,63 56W/h i5++ 0,63 56W/h iz 0,57 100W/h (300mm) 248nm Stepper EX4 0,60 65W/h EX5 0,63 87W/h EX6 0,63 87W/h 248nm Scanner ES2 0,68 87W/h ES2+ 0,68 115W/h ES3 0,73 126W/h 193nm Scanner ASML 0,85 100W/h AS3 0,75 120W/h AS4 0,85 126W/h Page 24

25 Microlithography at IFD Amount of lithographyc masks (reticles) amount Released (in Process) Archived Scrapped Engineering Page 25

26 Table of contents Overview Infineon and Infineon Dresden Short brief in Semiconductor Manufacturing Microlithography (at IFD) Examples for challenges Page 26

27 Challenges, example 1 VIA CD depends on ILD deposition BOT BOT CD CD [nm] tool Median Mean Count ETC A 286,6 286, ETC B 278,5 278, ETC C 270,9 270, Page 27

28 Challenges, example 1 VIA CD depends on ILD deposition 3,15 3,1 3,05 BOT CD / dose [nm/j] CD / Dosis 3 2,95 2,9 2,85 2,8 Gradient CD / dose = f(n) 2,75 2,7 1,457 1,4591,461,461 1,463 1,465 1,467 1,4691,471,471 1,473 n Page 28

29 Challenges, example 2 OVL depends on ILD deposition chamber Contrast of alignment mark is a function of ILD thickness 0,28 0,27 0,26 0,25 0,24 0,23 0,22 0,21 0,2 Xcontrast 0,19 0,18 0,17 0,16 0,15 0,14 0,13 0,12 0,11 0,1 0,09 0, Dicke Page 29

30 Challenges, example 3 Product focus depends on layer structure density Page 30

31 Thanks for your attention Many thanks and references to Alexandra Esser Cornelia Schumann Andreas Greiner Thomas Seedorf Thomas Zell Silvio Fritsche Frank Rabe Page 31