Voltage Divider Bias



Similar documents
Bipolar Junction Transistors

LABORATORY 2 THE DIFFERENTIAL AMPLIFIER

Transistor Biasing. The basic function of transistor is to do amplification. Principles of Electronics

Transistors. NPN Bipolar Junction Transistor

Physics 623 Transistor Characteristics and Single Transistor Amplifier Sept. 13, 2006

Common-Emitter Amplifier

Transistor Characteristics and Single Transistor Amplifier Sept. 8, 1997

BJT Circuit Configurations

TWO PORT NETWORKS h-parameter BJT MODEL

BJT Characteristics and Amplifiers

BJT AC Analysis 1 of 38. The r e Transistor model. Remind Q-poiint re = 26mv/IE

Common Base BJT Amplifier Common Collector BJT Amplifier

The 2N3393 Bipolar Junction Transistor

Collection of Solved Feedback Amplifier Problems

Figure 1: Common-base amplifier.

Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati

Bipolar Junction Transistor Basics

Common Emitter BJT Amplifier Design Current Mirror Design

BJT Amplifier Circuits

BJT Amplifier Circuits

W04 Transistors and Applications. Yrd. Doç. Dr. Aytaç Gören

CIRCUITS LABORATORY. In this experiment, the output I-V characteristic curves, the small-signal low

Dependent Sources: Introduction and analysis of circuits containing dependent sources.

W03 Analysis of DC Circuits. Yrd. Doç. Dr. Aytaç Gören

Lecture 23: Common Emitter Amplifier Frequency Response. Miller s Theorem.

Electronic Devices and Circuit Theory

Transistor Models. ampel

Differential Amplifier Offset. Causes of dc voltage and current offset Modeling dc offset R C

Lecture 18: Common Emitter Amplifier. Maximum Efficiency of Class A Amplifiers. Transformer Coupled Loads.

The BJT Differential Amplifier. Basic Circuit. DC Solution

Unit/Standard Number. High School Graduation Years 2010, 2011 and 2012

Basic FET Ampli ers 6.0 PREVIEW 6.1 THE MOSFET AMPLIFIER

Fig6-22 CB configuration. Z i [6-54] Z o [6-55] A v [6-56] Assuming R E >> r e. A i [6-57]

Supplement Reading on Diode Circuits. edu/~ee40/fa09/handouts/ee40_mos_circuit.pdf

Lecture 060 Push-Pull Output Stages (1/11/04) Page ECE Analog Integrated Circuits and Systems II P.E. Allen

LAB VIII. BIPOLAR JUNCTION TRANSISTOR CHARACTERISTICS

Application Note 82 Using the Dallas Trickle Charge Timekeeper

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J323

Lecture 12: DC Analysis of BJT Circuits.

Lecture 21: Junction Field Effect Transistors. Source Follower Amplifier

Transistor amplifiers: Biasing and Small Signal Model

ENEE 307 Electronic Circuit Design Laboratory Spring A. Iliadis Electrical Engineering Department University of Maryland College Park MD 20742

PHOTOTRANSISTOR OPTOCOUPLERS

Chapter 12: The Operational Amplifier

Lab 7: Operational Amplifiers Part I

3 The TTL NAND Gate. Fig. 3.1 Multiple Input Emitter Structure of TTL

Programmable Single-/Dual-/Triple- Tone Gong SAE 800

Objectives The purpose of this lab is build and analyze Differential amplifiers based on NPN transistors (or NMOS transistors).

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1020

Transistor Amplifiers

Frequency Response of the CE Amplifier

Regulated D.C. Power Supply

LAB VII. BIPOLAR JUNCTION TRANSISTOR CHARACTERISTICS

2N4921G, 2N4922G, 2N4923G. Medium-Power Plastic NPN Silicon Transistors 1.0 AMPERE GENERAL PURPOSE POWER TRANSISTORS VOLTS, 30 WATTS

AB07 Common Collector PNP Transistor Characteristics. Analog lab Experiment board. Ver 1.0

MAS.836 HOW TO BIAS AN OP-AMP

School of Engineering Department of Electrical and Computer Engineering

VI. Transistor amplifiers: Biasing and Small Signal Model

Chapter 8 Differential and Multistage Amplifiers. EE 3120 Microelectronics II

BIPOLAR JUNCTION TRANSISTORS

2N6387, 2N6388. Plastic Medium-Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, VOLTS

Content Map For Career & Technology

AMPLIFIERS BJT BJT TRANSISTOR. Types of BJT BJT. devices that increase the voltage, current, or power level

BJT AC Analysis. by Kenneth A. Kuhn Oct. 20, 2001, rev Aug. 31, 2008

Thevenin Equivalent Circuits


3.4 - BJT DIFFERENTIAL AMPLIFIERS

Amplifier Teaching Aid

The basic cascode amplifier consists of an input common-emitter (CE) configuration driving an output common-base (CB), as shown above.

FPAB20BH60B PFC SPM 3 Series for Single-Phase Boost PFC

BC327, BC327-16, BC327-25, BC Amplifier Transistors. PNP Silicon. These are Pb Free Devices* Features MAXIMUM RATINGS

KA7500C. SMPS Controller. Features. Description. Internal Block Diagram.

Mesh-Current Method (Loop Analysis)

MC34063A MC34063E DC-DC CONVERTER CONTROL CIRCUITS

SEMICONDUCTOR APPLICATION NOTE

Bipolar Transistor Amplifiers

LM 358 Op Amp. If you have small signals and need a more useful reading we could amplify it using the op amp, this is commonly used in sensors.

OPERATIONAL AMPLIFIERS

Differential Amplifier Common & Differential Modes

Using ADS to simulate Noise Figure

Local Oscillator for FM broadcast band MHz

EE 330 Lecture 21. Small Signal Analysis Small Signal Analysis of BJT Amplifier

Diodes and Transistors

TDA W Hi-Fi AUDIO POWER AMPLIFIER

TLP504A,TLP504A 2. Programmable Controllers AC / DC Input Module Solid State Relay. Pin Configurations (top view)

University of California, Berkeley Department of Electrical Engineering and Computer Sciences EE 105: Microelectronic Devices and Circuits

Lecture 30: Biasing MOSFET Amplifiers. MOSFET Current Mirrors.

POWER SUPPLY MODEL XP-15. Instruction Manual ELENCO

Figure 1. Diode circuit model

CHAPTER 10 OPERATIONAL-AMPLIFIER CIRCUITS

DEGREE: Bachelor in Biomedical Engineering YEAR: 2 TERM: 2 WEEKLY PLANNING

Basic Laws Circuit Theorems Methods of Network Analysis Non-Linear Devices and Simulation Models

2SD315AI Dual SCALE Driver Core for IGBTs and Power MOSFETs

Series and Parallel Resistive Circuits

Vdc. Vdc. Adc. W W/ C T J, T stg 65 to C

Superposition Examples

Operating Manual Ver.1.1

A Comparison of Various Bipolar Transistor Biasing Circuits Application Note 1293

Transcription:

Voltage Divider Bias ENGI 242 ELEC 222 BJT Biasing 3 For the Voltage Divider Bias Configurations Draw Equivalent Input circuit Draw Equivalent Output circuit Write necessary KVL and KCL Equations Determine the Quiescent Operating Point Graphical Solution using Load lines Computational Analysis Design and test design using a computer simulation 23 February 2005 ENGI 242/ELEC 222 2 Voltage Divider Bias 1

Voltage-divider bias configuration 23 February 2005 ENGI 242/ELEC 222 3 Voltage Divider Input Circuit Approximate Analysis This method is valid only if R2.1 β RE Under these conditions RE does not significantly load R2 and it may be ignored: I B << I 1 and I 2 and I 1 I 2 Therefore: R2 V B = VCC R+R 1 2 We may apply KVL to the input, which gives us: -VB + VBE + IE RE = 0 Solving for IE we get: I E = V B- V BE RE 23 February 2005 ENGI 242/ELEC 222 4 Voltage Divider Bias 2

Input Circuit Exact Analysis This method is always valid must be used when R2 >.1 β RE Perform Thevenin s Theorem Open the base lead of the transistor, and the Voltage Divider bias circuit is: V TH = V CC Calculate RTH R2 R+R 1 2 We may apply KVL to the input, which gives us: -VTH + IB RTH + VBE + IE RE = 0 Since IE = (β + 1) IB RTH -V TH + I E + V BE + I E R E = 0 β + 1 Solving for I E we obtain I E = V TH - V BE RTH β + 1 + R E : 23 February 2005 ENGI 242/ELEC 222 5 Redrawing the input circuit for the network 23 February 2005 ENGI 242/ELEC 222 6 Voltage Divider Bias 3

Determining VTH V TH = V CC R2 R+R 1 2 23 February 2005 ENGI 242/ELEC 222 7 Determining RTH R TH = R 1R 2 R 1+ R 2 23 February 2005 ENGI 242/ELEC 222 8 Voltage Divider Bias 4

The Thévenin Equivalent Circuit Note that VE = VB VBE and IE = (β + 1)IB 23 February 2005 ENGI 242/ELEC 222 9 Input Circuit Exact Analysis We may apply KVL to the input, which gives us: -VTH + IB RTH + VBE + IE RE = 0 Since IE = (β + 1) IB RTH -V TH + I E + V BE + I E R E = 0 β + 1 Solving for I E we obtain I E = V TH - V BE RTH β + 1 + R E : 23 February 2005 ENGI 242/ELEC 222 10 Voltage Divider Bias 5

Collector-Emitter Loop 23 February 2005 ENGI 242/ELEC 222 11 Collector-Emitter (Output) Loop Applying Kirchoff s voltage law: -VCC + IC RC + VCE + IE RE = 0 Assuming that IE IC and solving for VCE: I C = V CC - V CE R C+ R E Solve for VE: Solve for VC: VE = IE RE VC = VCC -IC RC or VC = VCE + IE RE Solve for VB: VB = VCC -IB RB or VB = VBE + IE RE 23 February 2005 ENGI 242/ELEC 222 12 Voltage Divider Bias 6

VCC = 22V R1 = 39kΩ R2 = 3.9kΩ RC = 10kΩ RE = 1.5kΩ β = 140 Voltage Divider Bias Example 1 23 February 2005 ENGI 242/ELEC 222 13 VCC = 18V R1 = 39kΩ R2 = 8.2kΩ RC = 3.3kΩ RE = 1kΩ β = 120 Voltage Divider Bias Example 2 23 February 2005 ENGI 242/ELEC 222 14 Voltage Divider Bias 7

VCC = 16V R1 = 62kΩ R2 = 9.1kΩ RC = 3.9kΩ RE =.68kΩ β = 80 Voltage Divider Bias Example 3 23 February 2005 ENGI 242/ELEC 222 15 Design of CE Amplifier with Voltage Divider Bias 1. Select a value for VCC 2. Determine the value of β from spec sheet or family of curves 3. Select a value for ICQ 4. Let VCE = ½ VCC (typical operation, 0.4 VCC VC 0.6 VCC ) 5. Let VE = 0.1 VCC (for good operation, 0.1 VCC VE 0.2 VCC ) 6. Calculate RE and RC 7. Let R2 0.1 β RE (for this calculation, use low value for β) 8. Calculate R1 V CC - V B R 1= R2 VB 23 February 2005 ENGI 242/ELEC 222 16 Voltage Divider Bias 8

CE Amplifier Design Design a Common Emitter Amplifier with Voltage Divider Bias for the following parameters: VCC = 24V IC = 5mA VE =.1VCC VC =.55VCC β = 135 23 February 2005 ENGI 242/ELEC 222 17 23 February 2005 ENGI 242/ELEC 222 18 Voltage Divider Bias 9

CE Amplifier Design 23 February 2005 ENGI 242/ELEC 222 19 CE Amplifier Design Voltage Divider Bias 23 February 2005 ENGI 242/ELEC 222 20 Voltage Divider Bias 10

Collector Feedback Bias ENGI 242 ELEC 222 BJT Biasing 4 For the Collector Feedback Bias Configuration: Draw Equivalent Input circuit Draw Equivalent Output circuit Write necessary KVL and KCL Equations Determine the Quiescent Operating Point Graphical Solution using Loadlines Computational Analysis Design and test design using a computer simulation 23 February 2005 ENGI 242/ELEC 222 22 Voltage Divider Bias 11

DC Bias with Collector (Voltage) Feedback Another way to improve the stability of a bias circuit is to add a feedback path from collector to base In this bias circuit the Q-point is only slightly dependent on the transistor β 23 February 2005 ENGI 242/ELEC 222 23 Base Emitter Loop Solve for IB Applying Kirchoff s voltage law: -VCC + IC RC + IBRB + VBE + IERE = 0 Note: IC = IE = IC + IB Since IE = (β + 1) IB then: -VCC + (β + 1)IB RC + IBRB + VBE (β + 1)IBRE = 0 Simplifying and solving for I B : VCC - VBE I= B R+ B (β + 1) (R C + R E ) 23 February 2005 ENGI 242/ELEC 222 24 Voltage Divider Bias 12

Base Emitter Loop Solve for IE Applying Kirchoff s voltage law: -VCC + IERC + IBRB + VBE + IERE = 0 Since IE = (β + 1) IB then: RB -V CC + I E R C + I E + V BE + IER E = 0 ( β + 1) VCC - VBE Simplifying and solving for I E : I E = R B + (R C + R E ) (β + 1) 23 February 2005 ENGI 242/ELEC 222 25 Collector Emitter Loop Applying Kirchoff s voltage law: IE RE + VCE + IC RC VCC = 0 Since IC =IE and IE = (β + 1) IB: IE(RC + RE) + VCE VCC =0 Solving for VCE: VCE = VCC IE (RE + RC) 23 February 2005 ENGI 242/ELEC 222 26 Voltage Divider Bias 13

Network Example 23 February 2005 ENGI 242/ELEC 222 27 Network Example 23 February 2005 ENGI 242/ELEC 222 28 Voltage Divider Bias 14

Collector feedback with RE = 0Ω 23 February 2005 ENGI 242/ELEC 222 29 Design of CE Amplifier with Collector Feedback Bias 1. Select a value for VCC 2. Determine the value of β from spec sheet or family of curves 3. Select a value for IEQ 4. Let VCE = ½ VCC (typical operation, 0.4 VCC VC 0.6 VCC ) 5. Let VE = 0.1 VCC (for good operation, 0.1 VCC VE 0.2 VCC ) 6. Calculate RE, RC and RB V E=.1V CC V - V V -.6V I I V - I R - V - I R I β + 1 CC CQ CC CC R C = = ; E E CC E C BE E E R B = ; E R E = R C = R B =.1V IE.4V I CC CC E V CC - I E (R C + R)- E 0.7 IE β + 1 V 23 February 2005 ENGI 242/ELEC 222 30 Voltage Divider Bias 15

Common Emitter Bias with Dual Supplies Voltage Divider Bias with Dual Power Supply 23 February 2005 ENGI 242/ELEC 222 32 Voltage Divider Bias 16

Voltage Divider Bias with Dual Power Supply Input Circuit Find VTH and RTH R 2 V TH1 = V CC R 1 + R 2 (Note V EE is negative) R 1 V TH2 = -V EE R + R V TH = V TH1 +V TH2 1 2 R 2 R 1 V TH = V CC - V EE R 1+ R 2 R 1+ R 2 R 1R 2 R TH = R 1 + R 2 23 February 2005 ENGI 242/ELEC 222 33 Voltage Divider Bias with Dual Power Supply Output Circuit -V CC + ICR C + V CE + IER E - V EE = 0 If we assume I E I C (when β > 100) CC EE CE I C = R C+ RE If we use the exact solution I C = αi E I C = V + V - V V + V - V RE RC + α β where α = β + 1 CC EE CE 23 February 2005 ENGI 242/ELEC 222 34 Voltage Divider Bias 17

Voltage Divider Bias with Dual Power Supply 23 February 2005 ENGI 242/ELEC 222 35 PSpice Simulation Voltage Divider Bias 18

PSpice Bias Point Simulation 23 February 2005 ENGI 242/ELEC 222 37 PSpice Simulation for DC Bias 23 February 2005 ENGI 242/ELEC 222 38 Voltage Divider Bias 19

PSpice Simulation for DC Sweep 23 February 2005 ENGI 242/ELEC 222 39 PSpice Simulation for DC Sweep The response of VC demonstrates rises rapidly towards the Q Point and then increases gradually towards a maximum value The response of VCE demonstrates that it reaches a peak value near the Q point and then decreases 23 February 2005 ENGI 242/ELEC 222 40 Voltage Divider Bias 20

PSpice Simulation for AC Sweep 23 February 2005 ENGI 242/ELEC 222 41 PSpice Simulation for AC Sweep 23 February 2005 ENGI 242/ELEC 222 42 Voltage Divider Bias 21