Advanced Process Technoogy Utra Low OnResistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fuy Avaanche Rated PRELIMINARY G IRF04 HEXFET Power MOSFET D S PD 9.724A V DSS = 40V R DS(on) = 0.009Ω I D = 00A Description Fifth Generation HEXFETs from Internationa Rectifier utiize advanced processing techniques to achieve extremey ow onresistance per siicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are we known for, provides the designer with an extremey efficient and reiabe device for use in a wide variety of appications. The TO220 package is universay preferred for a commerciaindustria appications at power dissipation eves to approximatey 50 watts. The ow therma resistance and ow package cost of the TO220 contribute to its wide acceptance throughout the industry. TO220AB Absoute Maximum Ratings Parameter Max. Units I D @ T C = 25 C Continuous Drain Current, V GS @ 0V 00 I D @ T C = 00 C Continuous Drain Current, V GS @ 0V 7 A I DM Pused Drain Current 400 P D @T C = 25 C Power Dissipation 70 W Linear Derating Factor. W/ C V GS GatetoSource Votage ± 20 V E AS Singe Puse Avaanche Energy 350 mj I AR Avaanche Current 60 A E AR Repetitive Avaanche Energy 7 mj dv/dt Peak Diode Recovery dv/dt ƒ 5.0 V/ns T J Operating Junction and 55 to 75 T STG Storage Temperature Range C Sodering Temperature, for 0 seconds 300 (.6mm from case ) Mounting torque, 632 or M3 srew 0 bf in (.N m) Therma Resistance Parameter Typ. Max. Units R θjc JunctiontoCase 0.90 R θcs CasetoSink, Fat, Greased Surface 0.50 C/W R θja JunctiontoAmbient 62 www.irf.com 4/24/98
Eectrica Characteristics @ T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS DraintoSource Breakdown Votage 40 V V GS = 0V, I D = 250µA V (BR)DSS / T J Breakdown Votage Temp. Coefficient 0.038 V/ C Reference to 25 C, I D = ma R DS(on) Static DraintoSource OnResistance 0.009 Ω V GS = 0V, I D = 60A V GS(th) Gate Threshod Votage 2.0 4.0 V V DS = V GS, I D = 250µA g fs Forward Transconductance 37 S V DS = 25V, I D = 60A I DSS DraintoSource Leakage Current 25 V µa DS = 40V, V GS = 0V 250 V DS = 32V, V GS = 0V, T J = 50 C I GSS GatetoSource Forward Leakage 00 V GS = 20V na GatetoSource Reverse Leakage 00 V GS = 20V Q g Tota Gate Charge 93 I D = 60A Q gs GatetoSource Charge 29 nc V DS = 32V Q gd GatetoDrain ("Mier") Charge 30 V GS = 0V, See Fig. 6 and 3 t d(on) TurnOn Deay Time 5 V DD = 20V t r Rise Time 4 I D = 60A ns t d(off) TurnOff Deay Time 28 R G = 3.6Ω t f Fa Time 9 R D = 0.33Ω, See Fig. 0 Between ead, L D Interna Drain Inductance 4.5 6mm (0.25in.) nh G from package L S Interna Source Inductance 7.5 and center of die contact C iss Input Capacitance 2900 V GS = 0V C oss Output Capacitance 00 pf V DS = 25V C rss Reverse Transfer Capacitance 250 ƒ =.0MHz, See Fig. 5 D S SourceDrain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current MOSFET symbo 00 (Body Diode) showing the A G I SM Pused Source Current integra reverse 400 (Body Diode) pn junction diode. S V SD Diode Forward Votage.3 V T J = 25 C, I S = 60A, V GS = 0V t rr Reverse Recovery Time 74 0 ns T J = 25 C, I F = 60A Q rr Reverse RecoveryCharge 88 280 nc di/dt = 00A/µs t on Forward TurnOn Time Intrinsic turnon time is negigibe (turnon is dominated by L S L D ) Notes: Repetitive rating; puse width imited by max. junction temperature. ( See fig. ) Puse width 300µs; duty cyce 2%. Starting T J = 25 C, L = 94µH R G = 25Ω, I AS = 60A. (See Figure 2) ƒ I SD 60A, di/dt 304A/µs, V DD V (BR)DSS, T J 75 C Cacuated continuous current based on maximum aowabe junction temperature;for recommended currenthanding of the package refer to Design Tip # 934 2 www.irf.com
I D, DraintoSource Current (A) 00 0 VGS TOP 5V 0V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V I D, DraintoSource Current (A) 00 0 VGS TOP 5V 0V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 20µs PULSE WIDTH T J = 25 C 0. 0 00 V DS, DraintoSource Votage (V) 20µs PULSE WIDTH T J = 75 C 0. 0 00 V DS, DraintoSource Votage (V) Fig. Typica Output Characteristics Fig 2. Typica Output Characteristics I D, DraintoSource Current (A) 00 0 T J = 75 C T J = 25 C V DS= 50V 20µs PULSE WIDTH 0. 4.0 5.0 6.0 7.0 8.0 9.0 0.0 V GS, GatetoSource Votage (V) R DS(on), DraintoSource On Resistance (Normaized) 2.5 I D = 00A 2.0.5.0 0.5 V GS = 0V 0.0 60 40 20 0 20 40 60 80 00 20 40 60 80 T J, Junction Temperature( C) Fig 3. Typica Transfer Characteristics Fig 4. Normaized OnResistance Vs. Temperature www.irf.com 3
C, Capacitance (pf) 5000 VGS = 0V, f = MHz Ciss = Cgs Cgd, C ds SHORTED Crss = Cgd 4000 Coss = Cds Cgd 3000 C iss 2000 C oss C rss 0 0 00 V DS, DraintoSource Votage (V) V GS, GatetoSource Votage (V) 20 5 0 5 I = D 60A V DS = 32V V DS = 20V FOR TEST CIRCUIT SEE FIGURE 3 0 0 25 50 75 00 Q G, Tota Gate Charge (nc) Fig 5. Typica Capacitance Vs. DraintoSource Votage Fig 6. Typica Gate Charge Vs. GatetoSource Votage I SD, Reverse Drain Current (A) 00 0 T J = 75 C T J = 25 C V GS = 0 V 0. 0.2 0.8.4 2.0 2.6 V SD,SourcetoDrain Votage (V) 0 I D, Drain Current (A) 00 OPERATION IN THIS AREA LIMITED BY R DS(on) 0us 00us ms 0 0ms TC = 25 C TJ = 75 C Singe Puse 0 00 V DS, DraintoSource Votage (V) Fig 7. Typica SourceDrain Diode Forward Votage Fig 8. Maximum Safe Operating Area 4 www.irf.com
00 LIMITED BY PACKAGE V DS R D 80 R G V GS D.U.T. I D, Drain Current (A) 60 40 0V Puse Width µs Duty Factor 0. % Fig 0a. Switching Time Test Circuit V DD 20 V DS 90% 0 25 50 75 00 25 50 75 T C, Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature 0% V GS t d(on) t r t d(off) t f Fig 0b. Switching Time Waveforms Therma Response (Z thjc ) 0. D = 0.50 0.20 0.0 0.05 0.02 0.0 SINGLE PULSE (THERMAL RESPONSE) Notes:. Duty factor D = t / t 2 2. Peak T J= P DM x Z thjc TC 0.0 0.0000 0.000 0.00 0.0 0. t, Rectanguar Puse Duration (sec) PDM t t2 Fig. Maximum Effective Transient Therma Impedance, JunctiontoCase www.irf.com 5
R G V DS 20V tp I AS Fig 2a. Uncamped Inductive Test Circuit tp L D.U.T 0.0Ω 5V DRIVER V (BR)DSS V DD A E AS, Singe Puse Avaanche Energy (mj) 800 600 400 200 TOP BOTTOM I D 24A 42A 60A 0 25 50 75 00 25 50 75 Starting T, Junction Temperature( J C) Fig 2c. Maximum Avaanche Energy Vs. Drain Current I AS Fig 2b. Uncamped Inductive Waveforms Current Reguator Same Type as D.U.T. 50KΩ Q G 2V.2µF.3µF 0 V Q GS Q GD D.U.T. V DS V G V GS 3mA Charge I G I D Current Samping Resistors Fig 3a. Basic Gate Charge Waveform Fig 3b. Gate Charge Test Circuit 6 www.irf.com
Peak Diode Recovery dv/dt Test Circuit D.U.T ƒ Circuit Layout Considerations Low Stray Inductance Ground Pane Low Leakage Inductance Current Transformer R G dv/dt controed by R G Driver same type as D.U.T. I SD controed by Duty Factor "D" D.U.T. Device Under Test V DD Driver Gate Drive Period P.W. D = P.W. Period V GS =0V * D.U.T. I SD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt V DD ReAppied Votage Inductor Curent Body Diode Forward Drop Rippe 5% I SD * V GS = 5V for Logic Leve Devices Fig 4. For NChanne HEXFETS www.irf.com 7
Package Outine TO220AB Outine Dimensions are shown in miimeters (inches) 2.87 (.3) 2.62 (.03) 0.54 (.45) 0.29 (.405) 3.78 (.49) 3.54 (.39) A 4.69 (.85) 4.20 (.65) B.32 (.052).22 (.048) 5.24 (.600) 4.84 (.584) 4.09 (.555) 3.47 (.530) 2 3 4 6.47 (.255) 6.0 (.240).5 (.045) MIN 4.06 (.60) 3.55 (.40) LEAD ASSIGNMENTS GATE 2 DR AIN 3 SOURCE 4 DR AIN 3X.40 (.055).5 (.045) 2.54 (.00) 2X NOTES: 3X 0.93 (.037) 0.69 (.027) 0.36 (.04) M B A M 0.55 (.022) 3X 0.46 (.08) 2.92 (.5) 2.64 (.04) DIMENSIONING & TOLERANCING PER ANSI Y4.5M, 982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO220AB. 2 CON TR OLLING DIMENSION : INC H 4 HEATSINK & LE AD MEASUREMENTS DO NOT INCLUDE BURRS. Part Marking Information TO220AB EXAMPLE : THIS IS AN IRF00 WITH ASSEMBLY LOT CODE 9BM INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE IRF00 9246 9B M PART NUMBER DATE CODE (YYW W ) YY = YEAR WW = WEEK A WORLD HEADQUARTERS: 233 Kansas St., E Segundo, Caifornia 90245, Te: (30) 322 333 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Te: 44 883 732020 IR CANADA: 732 Victoria Park Ave., Suite 20, Markham, Ontario L3R 2Z8, Te: (905) 475 897 IR GERMANY: Saaburgstrasse 57, 6350 Bad Homburg Te: 49 672 96590 IR ITALY: Via Liguria 49, 007 Borgaro, Torino Te: 39 45 0 IR FAR EAST: K&H Bdg., 2F, 304 NishiIkebukuro 3Chome, ToshimaKu, Tokyo Japan 7 Te: 8 3 3983 0086 IR SOUTHEAST ASIA: 35 Outram Road, #002 Tan Boon Liat Buiding, Singapore 036 Te: 65 22 837 http://www.irf.com/ Data and specifications subject to change without notice. 4/98 8 www.irf.com
Note: For the most current drawings pease refer to the IR website at: http://www.irf.com/package/