BJT Fixed Bias ENGI 242 ELEC 222. BJT Biasing 1

Similar documents
Voltage Divider Bias

Bipolar Junction Transistors

LABORATORY 2 THE DIFFERENTIAL AMPLIFIER

The 2N3393 Bipolar Junction Transistor

Transistors. NPN Bipolar Junction Transistor

BJT Characteristics and Amplifiers

TWO PORT NETWORKS h-parameter BJT MODEL

BJT Circuit Configurations

Common-Emitter Amplifier

Transistor Biasing. The basic function of transistor is to do amplification. Principles of Electronics

Common Base BJT Amplifier Common Collector BJT Amplifier

Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati

Transistor Characteristics and Single Transistor Amplifier Sept. 8, 1997

Physics 623 Transistor Characteristics and Single Transistor Amplifier Sept. 13, 2006

Bipolar Junction Transistor Basics

BJT AC Analysis 1 of 38. The r e Transistor model. Remind Q-poiint re = 26mv/IE

Common Emitter BJT Amplifier Design Current Mirror Design

AMPLIFIERS BJT BJT TRANSISTOR. Types of BJT BJT. devices that increase the voltage, current, or power level

Chapter 12: The Operational Amplifier

CIRCUITS LABORATORY. In this experiment, the output I-V characteristic curves, the small-signal low

LAB VIII. BIPOLAR JUNCTION TRANSISTOR CHARACTERISTICS

MAS.836 HOW TO BIAS AN OP-AMP

Transistor Models. ampel

W04 Transistors and Applications. Yrd. Doç. Dr. Aytaç Gören

LAB VII. BIPOLAR JUNCTION TRANSISTOR CHARACTERISTICS

Lecture 18: Common Emitter Amplifier. Maximum Efficiency of Class A Amplifiers. Transformer Coupled Loads.

BJT Amplifier Circuits

BJT AC Analysis. by Kenneth A. Kuhn Oct. 20, 2001, rev Aug. 31, 2008

Differential Amplifier Offset. Causes of dc voltage and current offset Modeling dc offset R C

Objectives The purpose of this lab is build and analyze Differential amplifiers based on NPN transistors (or NMOS transistors).

DATA SHEET PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING

Lecture 060 Push-Pull Output Stages (1/11/04) Page ECE Analog Integrated Circuits and Systems II P.E. Allen

Transistor amplifiers: Biasing and Small Signal Model

Figure 1: Common-base amplifier.

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1020

Fig6-22 CB configuration. Z i [6-54] Z o [6-55] A v [6-56] Assuming R E >> r e. A i [6-57]

BJT Amplifier Circuits

Lecture 12: DC Analysis of BJT Circuits.

Amplifier Teaching Aid

3 The TTL NAND Gate. Fig. 3.1 Multiple Input Emitter Structure of TTL

Transistor Amplifiers

Supplement Reading on Diode Circuits. edu/~ee40/fa09/handouts/ee40_mos_circuit.pdf

SEMICONDUCTOR APPLICATION NOTE

ENEE 307 Electronic Circuit Design Laboratory Spring A. Iliadis Electrical Engineering Department University of Maryland College Park MD 20742

The FET Constant-Current Source/Limiter. I D = ( V DS )(g oss ) (3) R L. g oss. where g oss = g oss (5) when V GS = 0 (6)

Using ADS to simulate Noise Figure

KA7500C. SMPS Controller. Features. Description. Internal Block Diagram.

Lecture 22: Class C Power Amplifiers

Bipolar Transistor Amplifiers

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J323

3.4 - BJT DIFFERENTIAL AMPLIFIERS

2N6387, 2N6388. Plastic Medium-Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, VOLTS

MC34063A MC34063E DC-DC CONVERTER CONTROL CIRCUITS

The basic cascode amplifier consists of an input common-emitter (CE) configuration driving an output common-base (CB), as shown above.

Diode Circuits. Operating in the Reverse Breakdown region. (Zener Diode)

PHOTOTRANSISTOR OPTOCOUPLERS

AB07 Common Collector PNP Transistor Characteristics. Analog lab Experiment board. Ver 1.0

School of Engineering Department of Electrical and Computer Engineering

Mesh-Current Method (Loop Analysis)

Diodes and Transistors

A Comparison of Various Bipolar Transistor Biasing Circuits Application Note 1293

05 Bipolar Junction Transistors (BJTs) basics

Collection of Solved Feedback Amplifier Problems

TLP504A,TLP504A 2. Programmable Controllers AC / DC Input Module Solid State Relay. Pin Configurations (top view)

2N6056. NPN Darlington Silicon Power Transistor DARLINGTON 8 AMPERE SILICON POWER TRANSISTOR 80 VOLTS, 100 WATTS

Lecture 21: Junction Field Effect Transistors. Source Follower Amplifier

Application Report SLVA072

Electronic Devices and Circuit Theory

Lecture 23: Common Emitter Amplifier Frequency Response. Miller s Theorem.

Chapter 8 Differential and Multistage Amplifiers. EE 3120 Microelectronics II

Lecture 30: Biasing MOSFET Amplifiers. MOSFET Current Mirrors.

The BJT Differential Amplifier. Basic Circuit. DC Solution

BC327, BC327-16, BC327-25, BC Amplifier Transistors. PNP Silicon. These are Pb Free Devices* Features MAXIMUM RATINGS

Thevenin Equivalent Circuits

Content Map For Career & Technology

University of California, Berkeley Department of Electrical Engineering and Computer Sciences EE 105: Microelectronic Devices and Circuits

Unit/Standard Number. High School Graduation Years 2010, 2011 and 2012

2N4921G, 2N4922G, 2N4923G. Medium-Power Plastic NPN Silicon Transistors 1.0 AMPERE GENERAL PURPOSE POWER TRANSISTORS VOLTS, 30 WATTS

LM2576R. 3.0A, 52kHz, Step-Down Switching Regulator FEATURES. Applications DESCRIPTION TO-220 PKG TO-220V PKG TO-263 PKG ORDERING INFORMATION

Application Note 82 Using the Dallas Trickle Charge Timekeeper

Vdc. Vdc. Adc. W W/ C T J, T stg 65 to C

TLP521 1,TLP521 2,TLP521 4

Dependent Sources: Introduction and analysis of circuits containing dependent sources.

Bob York. Transistor Basics - BJTs

W03 Analysis of DC Circuits. Yrd. Doç. Dr. Aytaç Gören

TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) Darlington Complementary Silicon Power Transistors

Regulated D.C. Power Supply

Superposition Examples

High Voltage Current Shunt Monitor AD8212

Programmable Single-/Dual-/Triple- Tone Gong SAE 800

Equivalent Circuit. Operating Characteristics at Ta = 25 C, V CC = ±34V, R L = 8Ω, VG = 40dB, Rg = 600Ω, R L : non-inductive load STK4181V

Operational Amplifier - IC 741

PD Storage Temperature Range Tstg 65 to +150 C Junction Temperature TJ 200 C

BIPOLAR JUNCTION TRANSISTORS

Operating Manual Ver.1.1

Figure 1. Diode circuit model

Chapter 10. RC Circuits ISU EE. C.Y. Lee

EGR 278 Digital Logic Lab File: N278L3A Lab # 3 Open-Collector and Driver Gates

Transcription:

BJT Fixed Bias ENGI 242 ELEC 222 BJT Biasing 1 For Fixed Bias Configuration: Draw Equivalent Input circuit Draw Equivalent Output circuit Write necessary KVL and KCL Equations Determine the Quiescent Operating Point Graphical Solution using Loadlines Computational Analysis Design and test design using a computer simulation January 2004 ENGI 242/ELEC 222 2

Complete CE Amplifier with Fixed Bias January 2004 ENGI 242/ELEC 222 3 Fixed Bias and Equivalent DC Circuit January 2004 ENGI 242/ELEC 222 4

Fixed-Bias Circuit January 2004 ENGI 242/ELEC 222 5 DC Equivalent Circuit January 2004 ENGI 242/ELEC 222 6

Base-Emitter (Input) Loop Using Kirchoff s voltage law: V CC + I B R B + V BE = 0 Solving for IB: I B = V CC - V R B BE January 2004 ENGI 242/ELEC 222 7 Collector-Emitter (Output) Loop Since: IC = β IB Using Kirchoff s voltage law: VCC + IC RC + VCE = 0 Because: VCE = VC VE Since VE = 0V, then: VC = VCE And VCE =VCC -ICRC Also: VBE = VB -VE with VE = 0V, then: VB = VBE January 2004 ENGI 242/ELEC 222 8

BJT Saturation Regions When the transistor is operating in the Saturation Region, the transistor is conducting at maximum collector current (based on the resistances in the output circuit, not the spec sheet value) such that: I Csat = where V CC - VCE R C V CE = 0.2 V January 2004 ENGI 242/ELEC 222 9 Determining Icsat January 2004 ENGI 242/ELEC 222 10

Determining ICSAT for the fixed-bias configuration January 2004 ENGI 242/ELEC 222 11 Load Line Analysis January 2004 ENGI 242/ELEC 222 12

Load Line Analysis The end points of the line are : I Csat and V CE cutoff For load line analysis, use VCE = 0 for ICSAT, and IC = 0 for VCEcutoff I Csat : V CEcutoff : I Csat = V = V V R CC C V CE = 0V CE CC I C = 0mA Where IB intersects with the load line we have the Q point Q-point is the particular operating point: Value of R B Sets the value of I B Where I B and Load Line intersect Sets the values of V CE and I C. January 2004 ENGI 242/ELEC 222 13 Circuit values effect Q-point January 2004 ENGI 242/ELEC 222 14

Circuit values effect Q-point (continued) January 2004 ENGI 242/ELEC 222 15 Circuit values effect Q-point (continued) January 2004 ENGI 242/ELEC 222 16

Load-line analysis January 2004 ENGI 242/ELEC 222 17 DC Fixed Bias Circuit Example January 2004 ENGI 242/ELEC 222 18

Loadline Example Family of Curves January 2004 ENGI 242/ELEC 222 19 Emitter Stabilized Bias ENGI 242 ELEC 222

BJT Emitter Bias For the Emitter Stabilized Bias Configuration: Draw Equivalent Input circuit Draw Equivalent Output circuit Write necessary KVL and KCL Equations Determine the Quiescent Operating Point Graphical Solution using Loadlines Computational Analysis Design and test design using a computer simulation January 2004 ENGI 242/ELEC 222 21 Improved Bias Stability The addition of RE to the Emitter circuit improves the stability of a transistor output Stability refers to a bias circuit in which the currents and voltages will remain fairly constant over a wide range of temperatures and transistor forward current gain (β) The temperature (TA or ambient temperature) surrounding the transistor circuit is not always constant Therefore, the transistor β is not a constant value January 2004 ENGI 242/ELEC 222 22

Emitter-Stabilized Bias Circuit Adding an emitter resistor to the circuit between the emitter lead and ground stabilizes the bias circuit over Fixed Bias January 2004 ENGI 242/ELEC 222 23 Base-Emitter Loop January 2004 ENGI 242/ELEC 222 24

Equivalent Network January 2004 ENGI 242/ELEC 222 25 Reflected Input impedance of RE January 2004 ENGI 242/ELEC 222 26

Base-Emitter Loop Applying Kirchoffs voltage law: -VCC + IB RB + VBE +IE RE = 0 Since: IE = (β + 1) IB We can write: -VCC + IB RB + VBE + (β + 1) IB RE = 0 Grouping terms and solving for I B : Or we could solve for IE with: I B = January 2004 ENGI 242/ELEC 222 27 V CC - V BE R B + (β+1)re RB - V CC + I E + V BE + I E R E = 0 ( β + 1) Collector-Emitter Loop January 2004 ENGI 242/ELEC 222 28

Collector-Emitter Loop Applying Kirchoff s voltage law: -VCC + IC RC + VCE + IE RE = 0 Assuming that I E I C and solving for VCE: VCE =VCC IC (RC + RE) If we can not use IE IC the IC = αie and: VCE =VCC IC (RC + αre) Solve for V E : VE = IE RE Solve for V C : VC = VCC -IC RC or VC = VCE + IE RE Solve for V B : VB = VCC -IBRB or VB = VBE + IE RE January 2004 ENGI 242/ELEC 222 29 Transistor Saturation At saturation, VCE is at a minimum We will find the value VCEsat = 0.2V For load line analysis, we use VCE = 0 To solve for ICSAT, use the output KVL equation: I CSAT = V CC - VCE R C + RE January 2004 ENGI 242/ELEC 222 30

Load Line Analysis The load line end points can be calculated: At cutoff: At saturation: V = V CE CC I C = 0 ma I C = V CC V CE = 0V R C + R E January 2004 ENGI 242/ELEC 222 31 Emitter Stabilized Bias Circuit Example January 2004 ENGI 242/ELEC 222 32

Design of an Emitter Bias CE Amplifier Where.1VCC VE.2VCC And.4VCC VC.6VCC January 2004 ENGI 242/ELEC 222 33 Emitter Bias with Dual Supply January 2004 ENGI 242/ELEC 222 34

Emitter Bias with Dual Supply Input Output January 2004 ENGI 242/ELEC 222 35