FDP047N08 N-Channel PowerTrench MOSFET 75V, 64A, 4.7mΩ Features R DS(on) = 3.8mΩ ( Typ.)@ V GS = 0V, I D = 80A Fast switching speed Low gate charge High performance trench technology for extremely low R DS(on) High power and current handling capability RoHS compliant Description March 2008 tm This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Application DC to DC convertors / Synchronous Rectification D G G D S TO-220 FDP Series S MOSFET Maximum Ratings T C = 25 o C unless otherwise noted* Symbol Parameter Ratings Units V DSS Drain to Source Voltage 75 V V GSS Gate to Source Voltage ±20 V I D Drain Current -Continuous (T C = 25 o C) 64* A -Continuous (T C = 00 o C) 6* A I DM Drain Current - Pulsed (Note ) 656 A E AS Single Pulsed Avalanche Energy (Note 2) 670 mj dv/dt Peak Diode Recovery dv/dt (Note 3) 3.0 V/ns P D Power Dissipation (T C = 25 o C) 268 W - Derate above 25 o C.79 W/ o C T J, T STG Operating and Storage Temperature Range -55 to +75 o C T L Maximum Lead Temperature for Soldering Purpose, /8 from Case for 5 Seconds 300 o C *Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 80A. Thermal Characteristics Symbol Parameter Ratings Units R θjc Thermal Resistance, Junction to Case 0.56 R θcs Thermal Resistance, Case to Sink Typ. 0.5 R θja Thermal Resistance, Junction to Ambient 62.5 o C/W 2008 Fairchild Semiconductor Corporation
Package Marking and Ordering Information T C = 25 o C unless otherwise noted Device Marking Device Package Reel Size Tape Width Quantity FDP047N08 FDP047N08 TO-220 - - 50 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BV DSS Drain to Source Breakdown Voltage I D = 250µA, V GS = 0V, T C = 25 o C 75 - - V BV DSS Breakdown Voltage Temperature I / T J Coefficient D = 250µA, Referenced to 25 o C - 0.02 - V/ o C V DS = 75V, V GS = 0V - - I DSS Zero Gate Voltage Drain Current µa V DS = 75V, T C = 50 o C - - 500 I GSS Gate to Body Leakage Current V GS = ±20V, V DS = 0V - - ±00 na On Characteristics V GS(th) Gate Threshold Voltage V GS = V DS, I D = 250µA 2.5 3.5 4.5 V R DS(on) Static Drain to Source On Resistance V GS = 0V, I D = 80A - 3.7 4.7 mω g FS Forward Transconductance V DS = 0V, I D = 80A (Note 4) - 50 - S Dynamic Characteristics C iss Input Capacitance - 7080 945 pf V DS = 25V, V GS = 0V C oss Output Capacitance - 870 55 pf f = MHz C rss Reverse Transfer Capacitance - 40 65 pf Switching Characteristics t d(on) Turn-On Delay Time - 00 20 ns t r Turn-On Rise Time V DD = 37.5V, I D = 80A - 47 304 ns t d(off) Turn-Off Delay Time R GEN = 25Ω, V GS = 0V - 220 450 ns t f Turn-Off Fall Time (Note 4, 5) - 4 238 ns Q g(tot) Total Gate Charge at 0V - 7 52 nc Q gs Gate to Source Gate Charge V DS = 60V, I D = 80A - 37 - nc Q gd Gate to Drain Miller Charge V GS = 0V (Note 4, 5) - 32 - nc Drain-Source Diode Characteristics I S Maximum Continuous Drain to Source Diode Forward Current - - 64 A I SM Maximum Pulsed Drain to Source Diode Forward Current - - 656 A V SD Drain to Source Diode Forward Voltage V GS = 0V, I SD = 80A - -.25 V t rr Reverse Recovery Time V GS = 0V, I SD = 80A - 45 - ns Q rr Reverse Recovery Charge di F /dt = 00A/µs (Note 4) - 66 - nc Notes:. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 0.2mH, I AS = 80A, V DD = 50V, R G = 25Ω, Starting T J = 25 C 3. I SD 75A, di/dt 200A/µs, V DD BV DSS, Starting T J = 25 C 4. Pulse Test: Pulse width 300µs, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics 2
Typical Performance Characteristics ID,Drain Current[A] RDS(ON) [Ω], Drain-Source On-Resistance Figure. On-Region Characteristics 500 00 0 V GS = 5.0V 0.0V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V. 250µs Pulse Test 2. T C = 25 o C 0.002 0.0 0. V DS,Drain-Source Voltage[V] Figure 2. Transfer Characteristics 3 4 5 6 7 V GS,Gate-Source Voltage[V] Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation vs. Source Current and Temperature 0.006 0.005 0.004 0.003 V GS = 0V V GS = 20V *Note: T C = 25 o C 0.002 0 00 200 300 400 I D, Drain Current [A] ID,Drain Current[A] IS, Reverse Drain Current [A] 500 00 0 500 00 0. V DS = 20V 2. 250µs Pulse Test 75 o C 75 o C 25 o C -55 o C 25 o C. V GS = 0V 2. 250µs Pulse Test 0.2 0.4 0.6 0.8.0.2.4 V SD, Body Diode Forward Voltage [V] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics Capacitances [pf] 2000 8000 4000 C iss C oss C rss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd *Note:. V GS = 0V 2. f = MHz VGS, Gate-Source Voltage [V] 0 8 6 4 2 V DS = 5V V DS = 37.5V V DS = 60V 0 0. 0 30 V DS, Drain-Source Voltage [V] *Note: I D = 80A 0 0 20 40 60 80 00 20 Q g, Total Gate Charge [nc] 3
Typical Performance Characteristics (Continued) BVDSS, [Normalized] Drain-Source Breakdown Voltage Figure 7. Breakdown Voltage Variation vs. Temperature ID, Drain Current [A].5.0.05.00 0.95. V GS = 0V 2. I D = 0mA 0.90-00 -50 0 50 00 50 200 T J, Junction Temperature [ o C] Figure 9. Maximum Safe Operating Area 000 00 0 Operation in This Area is Limited by R DS(on) ms 0ms DC 00µs. T C = 25 o C 2. T J = 75 o C 3. Single Pulse 30µs 0. 0 00 V DS, Drain-Source Voltage [V] RDS(on), [Normalized] Drain-Source On-Resistance ID, Drain Current [A] Figure 8. On-Resistance Variation vs. Temperature 2.5 2.0.5.0. V GS = 0V 2. I D = 80A 0.5-00 -50 0 50 00 50 200 T J, Junction Temperature [ o C] 80 50 20 90 60 30 Figure 0. Maximum Drain Current vs. Case Temperature Limited by package 0 25 50 75 00 25 50 75 T C, Case Temperature [ o C] Figure. Transient Thermal Response Curve 2 Thermal Response [Z θjc ] 0. 0.5 0.2 0. 0.05 0.02 0.0 0.0 Single pulse. Z θjc (t) = 0.56 o C/W Max. 2. Duty Factor, D= t /t 2 3. T JM - T C = P DM * Z θjc (t) E-3 0-5 0-4 0-3 0-2 0-0 Rectangular Pulse Duration [sec] P DM t t 2 4
Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5
Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V GS I SD V DS _ L Driver R G Same Type as DUT dv/dt controlled by RG I SD controlled by pulse period V DD V GS ( Driver ) Gate Pulse Width D = -------------------------- Gate Pulse Period 0V I FM, Body Diode Forward Current I SD ( DUT ) di/dt I RM Body Diode Reverse Current V DS ( DUT ) Body Diode Recovery dv/dt V SD V DD Body Diode Forward Voltage Drop 6
Mechanical Dimensions TO-220 7
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