Lecture 32: Common Source Amplifier with Source Degeneration.

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Whites, EE 320 Lecture 32 Page 1 of 10 Lecture 32: Common Source Amplifier with Source Degeneration. The small-signal amplification performance of the CS amplifier discussed in the previous lecture can be improved by including a series resistance in the source circuit. (This is very similar if not identical to the effect of adding emitter degeneration to the BJT CE amplifier.) This so-called CS amplifier with source degeneration circuit is shown in Fig. 1. v O (Fig. 1) In addition to the methods we discussed in Lecture 30 for biasing MOSFET amplifiers, this is yet another method using a current source. The current source in Fig. 1 could perhaps be the output of a current mirror that is replicating a golden current 2016 Keith W. Whites

Whites, EE 320 Lecture 32 Page 2 of 10 produced elsewhere in the circuit. The bypass capacitor acts to place an AC ground at the input of the current source, thus removing the effects of the current source from the AC operation of the amplifier. We have a choice of small-signal models to use for the MOSFET. A T model will simplify the analysis, on one hand, by allowing us to incorporate the effects of R S by simply adding this value to 1/g m in the small-signal model, if we ignore r o. This small-signal circuit is shown in Fig. 2. (Fig. 2) (Sedra and Smith, 5 th ed.) On the other hand, using the T model makes the analysis more difficult when r o is included. (The hybrid model is better at easily including the effects of r o.) However, r o in the MOSFET

Whites, EE 320 Lecture 32 Page 3 of 10 amplifier is large so we can reasonably ignore its effects for now in the expectation of making the analysis more tractable. Small-Signal Amplifier Characteristics We ll now calculate the following small-signal quantities for this MOSFET common source amplifier with source degeneration: R in, A v, G v, G i, and R out. Input resistance, R in. Referring to the small-signal equivalent circuit above in Fig. 2, with ig 0, then R R (4.84),(1) in Here we see the direct benefit of adding the explicit boundary condition i g = 0 to the small-signal model, as discussed in Lecture 28. Without it, we would need to set up a system of equations, solve them, and then find out that the effects of the circuit to the right of gate make no contribution to R in. That s a lot more effort. Partial small-signal voltage gain, A v. We see at the output side of the small-signal circuit in Fig. 2 v g v R R (2) G o m gs D L

Whites, EE 320 Lecture 32 Page 4 of 10 which is the same result (ignoring r o ) as we found for the CS amplifier without source generation. At the gate, however, we find through voltage division that 1/ gm vi vgs vi (7.98),(3) 1/ gm RS 1gmRS This is a different result than for the CS amplifier in that v gs is only a fraction of v i here, whereas vgs vi without R S. Substituting (3) into (2), gives the partial small-signal AC voltage gain to be v gmrd R o L Av (4) v 1 g R i m S Overall small-signal voltage gain, G v. As we did in the previous lecture, we can derive an expression for G v in terms of A v. By definition, vo vi vo vi Gv Av (5) vsig vsig v i vsig Applying voltage division at the input of the small-signal equivalent circuit in Fig. 2, Rin RG vi vsig vsig (6) Rin Rsig (1) RG Rsig Substituting (6) into (5) we the overall small-signal AC voltage gain for this CS amplifier with source degeneration to be A v

Whites, EE 320 Lecture 32 Page 5 of 10 R g R R G Gv R R 1 g R G sig m S m D L (7) Overall small-signal current gain, G i. Using current division at the output in the small-signal model above in Fig. 2 RD io gmvgs (8) RD RL while at the input, vi 1 gmrs ii vgs (9) RG (3) RG Substituting (9) into (8) we find that the overall small-signal AC current gain is io gmrd RG Gi (10) i R R 1 g R i D L m S Output resistance, R out. From the small-signal circuit in Fig. 2 with v sig 0 then i must be zero leading to R R (11) out D Discussion Adding R S has a number of effects on the CS amplifier. (Notice, though, that it doesn t affect the input and output resistances.) First, observe from (3)

Whites, EE 320 Lecture 32 Page 6 of 10 vi vgs (3) 1 gmrs that we can employ R S as a tool to lower v gs relative to v i and lessen the effects of nonlinear distortion. This R S also has the effect of lowering the small-signal voltage gain, which we can directly see from (7). A major benefit, though, of using R S is that the small-signal voltage (and current) gain can be made much less dependent on the MOSFET device characteristics. (We saw a similar effect in the CE BJT amplifier with emitter degeneration.) We can see this here for the MOSFET CS amplifier using (7) R gmrd R G L Gv (7) R G R sig 1 g m R S The key factor in this expression is the second one. In the case that gmrs 1 then RG RD RL Gv (12) R G R sig R S which is no longer dependent on g m. Conversely, without R S in the circuit ( RS 0), we see from (7) that Gv gm and is directly dependent on the physical properties of the transistor (and the biasing) because

Whites, EE 320 Lecture 32 Page 7 of 10 in the case of an NMOS device. i W g k V V (7.32),(13) d m n GS t vgs L The price we pay for this desirable behavior in (12) where G v is not dependent on g m is a reduced value for G v. This G v is largest when RS 0, as can be seen from (7). Example N32.1 (loosely based on text Exercises 7.37. 7.38, and 7.39). Compute the small-signal voltage gain for the circuit below with RS 0, k n W L 1 ma/v 2, and V t = 1.5 V. For a 0.4-V pp sinusoidal input voltage, what is the amplitude of the output signal? W ma k n 1 V 2 L V 1.5 V t v O For the DC analysis, we see that VG 0 and ID IS 0.5 ma. (Why is VG 0?) Consequently,

Whites, EE 320 Lecture 32 Page 8 of 10 V 10 R I 10 14k 0.5m 3 V D D D Assuming MOSFET operation in the saturation mode 1 W I 2 D k n VGS Vt 2 L 1 such that 0.5 ma 110 3 V 1.5 2 GS 2 or VGS 1.5 1 VGS 2.5 V or 0.5 V Therefore, VS 2.5 V for operation in the saturation mode. For the AC analysis, from (13) 3 g m 10 2.5 1.5 1 ms Using this result in (7) with RS 0 gives 4.7M 10 3 V G v 14k 14k 6.85 4.7M 100k V For an input sinusoid with 0.4-V pp amplitude, then Vo Gv Vsig 6.850.4 Vpp 2.74 Vpp Will the MOSFET remain in the saturation mode for the entire cycle of this output voltage? For operation in the saturation mode, vdg vd Vt 1.5 V. On the negative swing of the output voltage, vo,pp 2.74 vd V 3 1.63 min D V 2 2

Whites, EE 320 Lecture 32 Page 9 of 10 which is greater than V t, so the MOSFET will not leave the saturation mode on the negative swings of the output voltage. On the positive swings, vo,pp 2.74 vd V 3 4.37 max D V 2 2 which is less than VDD 10 V so the MOSFET will not cutoff and leave the saturation mode. (Alternatively, the MOSFET does leave the saturation mode on the negative swings if R R 15 k D L Lastly, imagine that for some reason the input voltage is increased by a factor of 3 (to 1.2 V pp ). What value of R S can be used to keep the output voltage unchanged? From (7), we can choose R S so that the so-called feedback factor 1 gmrs equals 3. The output voltage amplitude will then be unchanged with this increased input voltage. Hence, for 1gmRS 3 31 2 RS 3 gm 10 2 k. With RS 2 k the new overall small-signal AC voltage gain is from (7) 6.85 6.85 V Gv 2.28 1 g R 3 V m S

Whites, EE 320 Lecture 32 Page 10 of 10 The overall small-signal voltage gain has gone down, but the amplitude of the output voltage has stayed the same since the input voltage amplitude was increased.