NPN Silicon Power Darlington High Voltage Autoprotected D 2 PAK for Surface Mount The BUB323Z is a planar, monolithic, highvoltage power Darlington with a builtin active zener clamping circuit. This device is specifically designed for unclamped, inductive applications such as Electronic Ignition, Switching Regulators and Motor Control. Features Integrated HighVoltage Active Clamp Tight Clamping Voltage Window (350 V to 450 V) Guaranteed Over the 40 C to +25 C Temperature Range Clamping Energy Capability 0% Tested in a Live Ignition Circuit High DC Current Gain/Low Saturation Voltages Specified Over Full Temperature Range Design Guarantees Operation in SOA at All Times NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Sustaining Voltage O 350 Vdc CollectorEmitter Voltage V EBO 6.0 Vdc Collector Current Continuous Peak Base Current Total Power Dissipation @ T C = 25 C Derate above 25 C Continuous Peak Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS M 20 I B 3.0 I BM 6.0 P D 50 T J, T stg 65 to +75 Adc Adc W W/ C Characteristic Symbol Max Unit Thermal Resistance, JunctiontoCase R JC C/W Thermal Resistance, JunctiontoAmbient R JA 62.5 C/W Maximum Lead Temperature for Soldering Purposes, /8 in from Case for 5 Seconds C T L 260 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. AUTOPROTECTED DARLINGTON AMPERES 360450 VOLTS CLAMP 50 WATTS BUB323Z A Y WW G 360 V CLAMP D 2 PAK CASE 48B STYLE MARKING DIAGRAM BUB323ZG AYWW = Specific Device Code = Assembly Location = Year = Work Week = PbFree Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Semiconductor Components Industries, LLC, 204 September, 204 Rev. 2 Publication Order Number: BUB323Z/D
ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS (Note ) CollectorEmitter Clamping Voltage ( = 7.0 A) (T C = 40 C to +25 C) CollectorEmitter Cutoff Current ( = 200 V, I B = 0) EmitterBase Leakage Current (V EB = 6.0 Vdc, = 0) ON CHARACTERISTICS (Note ) BaseEmitter Saturation Voltage ( = 8.0 Adc, I B = 0 madc) ( = Adc, I B = 0.25 Adc) CollectorEmitter Saturation Voltage ( = 7.0 Adc, I B = 70 madc) ( = 8.0 Adc, I B = 0. Adc) ( = Adc, I B = 0.25 Adc) (T C = 25 C) (T C = 25 C) BaseEmitter On Voltage ( = 5.0 Adc, = 2.0 Vdc) (T C = 40 C to +25 C) ( = 8.0 Adc, = 2.0 Vdc) Diode Forward Voltage Drop (I F = Adc) V CLAMP 350 450 Vdc EO 0 Adc I EBO 50 madc V BE(sat) (sat) V BE(on)..3 2.2 2.5.6.8.8 2..7 2. 2.3 Vdc Vdc Vdc V F 2.5 Vdc DC Current Gain ( = 6.5 Adc, =.5 Vdc) (T C = 40 C to +25 C) ( = 5.0 Adc, = 4.6 Vdc) h FE 50 500 3400 DYNAMIC CHARACTERISTICS Current Gain Bandwidth ( = 0.2 Adc, = Vdc, f = MHz) Output Capacitance (V CB = Vdc, I E = 0, f = MHz) Input Capacitance (V EB = 6.0 V) CLAMPING ENERGY (See Notes) Repetitive NonDestructive Energy Dissipated at turnoff: ( = 7.0 A, L = 8.0 mh, R BE = 0 ) (see Figures 2 and 4) f T 2.0 MHz C ob 200 pf C ib 550 pf W CLAMP 200 mj SWITCHING CHARACTERISTICS: Inductive Load (L = mh) Fall Time ( = 6.5 A, I B = 45 ma, t fi 625 ns Storage Time V BE(off) = 0, R BE(off) = 0, t si 30 s Crossover Time V CC = 4 V, V Z = 300 V) t c.7 s Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.. Pulse Test: Pulse Width 300 s, Duty Cycle = 2.0%. 2
I NOM = 6.5 A Output transistor turns on: = 40 ma MERCURY CONTACTS WETTED RELAY L INDUCTANCE (8 mh) MONITOR (V GATE ) CURRENT SOURCE High Voltage Circuit turns on: = 20 ma Icer Leakage Current Avalanche diode turns on: = 0 A 250 V 300 V 340 V V CLAMP NOMINAL = 400 V I B CURRENT SOURCE R BE = 0 V BEoff I B2 SOURCE MONITOR 0. NON INDUCTIVE Figure. = f( ) Curve Shape Figure 2. Basic Energy Test Circuit By design, the BU323Z has a builtin avalanche diode and a special high voltage driving circuit. During an autoprotect cycle, the transistor is turned on again as soon as a voltage, determined by the zener threshold and the network, is reached. This prevents the transistor from going into a Reverse Bias Operating limit condition. Therefore, the device will have an extended safe operating area and will always appear to be in FBSOA. Because of the builtin zener and associated network, the = f( ) curve exhibits an unfamiliar shape compared to standard products as shown in Figure. The bias parameters, V CLAMP, I B, V BE(off), I B2,, and the inductance, are applied according to the Device Under Test (DUT) specifications. and are monitored by the test system while making sure the load line remains within the limits as described in Figure 4. Note: All BU323Z ignition devices are 0% energy tested, per the test circuit and criteria described in Figures 2 and 4, to the minimum guaranteed repetitive energy, as specified in the device parameter section. The device can sustain this energy on a repetitive basis without degrading any of the specified electrical characteristics of the devices. The units under test are kept functional during the complete test sequence for the test conditions described: (peak) = 7.0 A, H = 5.0 A, L = 0 ma, I B = 0 ma, R BE = 0, V gate = 280 V, L = 8.0 mh IC, COLLECTOR CURRENT (AMPS) 0. 0.0 0.00 T C = 25 C 250 ms ms THERMAL LIMIT SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED O ms 300 s 0 340 V, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 3. Forward Bias Safe Operating Area 00 3
PEAK HIGH LOW The shaded area represents the amount of energy the device can sustain, under given DC biases ( /I B /V BE(off) / R BE ), without an external clamp; see the test schematic diagram, Figure 2. The transistor PASSES the Energy test if, for the inductive load and PEAK /I B /V BE(off) biases, the remains outside the shaded area and greater than the V GATE minimum limit, Figure 4a. (a) V GATE MIN PEAK HIGH LOW PEAK (b) V GATE MIN HIGH The transistor FAILS if the is less than the V GATE (minimum limit) at any point along the / curve as shown on Figures 4b, and 4c. This assures that hot spots and uncontrolled avalanche are not being generated in the die, and the transistor is not damaged, thus enabling the sustained energy level required. LOW (c) V GATE MIN PEAK HIGH The transistor FAILS if its Collector/Emitter breakdown voltage is less than the V GATE value, Figure 4d. LOW (d) V GATE MIN Figure 4. Energy Test Criteria for BU323Z 4
000 000 TYPICAL T J = 25 C hfe, DC CURRENT GAIN 00 0 25 C -40 C hfe, DC CURRENT GAIN 00 0 TYP + 6Σ TYP - 6Σ 0 =.5 V 00, COLLECTOR CURRENT (MILLIAMPS) 000 0 = 5 V, T J = 25 C 00 000, COLLECTOR CURRENT (MILLIAMPS) 0000 Figure 5. DC Current Gain Figure 6. DC Current Gain VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 5.0 4.5 4.0 3.5 3.0 2.5 2.0.5 0.5 0 = 3 A 5 A 8 A A 7 A I B, BASE CURRENT (MILLIAMPS) T J = 25 C 0 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 2.4 2.2 2.0.8.6.4.2 0.8 0.6 0.4 0. /I B = 50 25 C, COLLECTOR CURRENT (AMPS) T J = 25 C Figure 7. Collector Saturation Region Figure 8. CollectorEmitter Saturation Voltage VBE, BASE-EMITTER VOLTAGE (VOLTS) 2.0.8.6.4.2 0.8 0. /I B = 50 T J = 25 C 25 C, COLLECTOR CURRENT (AMPS) VBE(on), BASE-EMITTER VOLTAGE (VOLTS) 2.0.8.6.4.2 0.8 0.6 0. = 2 VOLTS T J = 25 C 25 C, COLLECTOR CURRENT (AMPS) Figure 9. BaseEmitter Saturation Voltage Figure. BaseEmitter ON Voltages 5
ORDERING INFORMATION BUB323ZG Device Package Shipping D 2 PAK (PbFree) 50 Units / Rail BUB323ZT4G D 2 PAK (PbFree) 800 Units / Tape & Reel NJVBUB323ZT4G* D 2 PAK (PbFree) 800 Units / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD80/D. *NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ Qualified and PPAP Capable. 6
PACKAGE DIMENSIONS D 2 PAK 3 CASE 48B04 ISSUE K T SEATING PLANE B 4 2 3 G S D 3 PL 0.3 (0.005) M T B M K C H E V W A W J NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, 982. 2. CONTROLLING DIMENSION: INCH. 3. 48B0 THRU 48B03 OBSOLETE, NEW STANDARD 48B04. INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.340 0.380 8.64 9.65 B 0.380 0.405 9.65.29 C 0.60 0.90 4.06 4.83 D 0.020 0.035 0.5 0.89 E 0.045 0.055.4.40 F 0.3 0.350 7.87 8.89 G 0.0 BSC 2.54 BSC H 0.080 0. 2.03 2.79 J 0.08 0.025 0.46 0.64 K 0.090 0. 2.29 2.79 L 0.052 0.072.32.83 M 0.280 0.320 7. 8.3 N 0.97 REF 5.00 REF P 0.079 REF 2.00 REF R 0.039 REF 0.99 REF S 0.575 0.625 4.60 5.88 V 0.045 0.055.4.40 VARIABLE CONFIGURATION ZONE R N U STYLE : PIN. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR P L L L M M M F F F VIEW WW VIEW WW VIEW WW 2 3 SOLDERING FOOTPRINT*.49 8.38 6.55 2X 6 5.080 PITCH 2X 3.504 DIMENSIONS: MILLIMETERS *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 7
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